arXiv subjects

Yingxi Bai

Publications and source records attributed to Yingxi Bai.

3 recordsLinked to original sources

arXiv2026

Magnonic Quantum Spin Hall Effect with Chiral Magnon Transport in Bilayer Altermagnets

Altermagnetism has attracted considerable interest, yet its associated spintronic phenomena have so far been largely confined to electronic systems. In this work, we uncover a universal symmetry-based strategy for realizing topological altermagnets with the magnonic quantum spin Hall effect, as evidenced by a nonzero spin Chern number and protected helical edge states. Moreover, we demonstrate that chiral magnon splitting in altermagnets gives rise to an intrinsically anisotropic, momentum-resolved thermal Hall response, sharply contrasting with those in ferromagnets and antiferromagnets, thus offering enhanced flexibility for selective manipulation. As a concrete material realization, first-principles calculations and Heisenberg-DM model analysis reveal that V$_2$WS$_4$ bilayer exhibits $d$-wave altermagnetism, integer spin Chern number with helical magnon edge states, and the nonzero momentum-locked thermal Hall conductivity. Our results establish a direct link between topological magnons and altermagnetism, opening new avenues for dissipationless magnonic devices.

cond-mat.mtrl-sci↗

arXiv2024

Topology-engineered orbital Hall effect in two-dimensional ferromagnets

Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi$_2$Te$_4$ as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work we open up new possibilities for innovative applications in topological spintronics and orbitronics.

cond-mat.mtrl-sci↗

arXiv2022

Doubled Quantum Spin Hall Effect with High-Spin Chern Number in $α$-Antimonene and $α$-Bismuthene

The discovery of quantum spin Hall effect has ignited the field of topological physics with vast variety of exotic properties. Here, we present the emergence of doubled quantum spin Hall effect in two dimensions characterized with a high spin Chern number of ${\mathcal C_S}=2$ and two pairs of helical edge states. Although is overlooked and invisible in topological quantum chemistry and symmetry indicator theory, the already experimentally synthesized $α$-antimonene and $α$-bismuthene are revealed as realistic material candidates of predicted topological states with band inversions emerging at generic $k$-points, rather than the high-symmetry momenta. Remarkably, the nontrivial energy gap can be as large as 464 meV for $α$-bismuthene, indicating the high possibility of room-temperature observation of the doubled quantum spin Hall effect. Moreover, a four-band effective model is constructed to demonstrate further the feasibility of attaining this type of nontrivial topology. Our results not only uncover a novel topological character of antimony and bismuth, but will also facilitate the experimental characterization of the previously overlooked hidden topology.

cond-mat.mtrl-sci↗