arXiv subjects

Yinjie Guo

Publications and source records attributed to Yinjie Guo.

8 recordsLinked to original sources

arXiv2026

Ultrafast Charge-Doping via Photo-Thermionic Injection in van der Waals Devices

Van der Waals (vdW) heterostructures of two-dimensional (2D) materials have become a rich playground for the exploration of correlated quantum phases, and recent studies have begun to probe their non-equilibrium dynamics under femtosecond laser excitation. In a time-resolved experiment, optical excitation of the multilayer structure can lead not only to rich dynamic responses from the target layers, such as moiré interfaces, but also to additional device functionality from the layer degree of freedom. Here, we investigate optical excitation in a prototypical moiré device of dual-gated twisted WSe2 bilayers, with few-layer graphite gates and hexagonal boron nitride (hBN) spacers. We establish an ultrafast photodoping mechanism in the moiré bilayer from photo-thermionic emission of the graphite gates. Using transient reflectance experiments, we reveal photo-induced hole injection evidenced by: (i) a shift of gate voltages at which optical signatures of correlated insulators are observed, (ii) a persistent optical signature indicative of charge diffusion at microsecond timescales and local charge buildup from pulse-to-pulse accumulation, and (iii) photoinduced absorption due likely to transient formation of correlated insulators. We further demonstrate that the injected holes can be selectively controlled by tuning the excitation energy, fluence, and gate bias.

cond-mat.str-el↗

arXiv2026

Photoinduced Metal-to-Insulator Transitions in 2D Moiré Devices

Photoexcitation has been utilized to control quantum matter and to uncover metastable phases far from equilibrium. Among demonstrations to date, the most common is the photo-induced transition from correlated insulators to metallic states; however, the reverse process without initial orders has not been observed. Here, we show ultrafast metal-to-insulator transition in gate-doped WS2/WSe2 and WSe2/WSe2 moiré devices using photo-thermionic hole injection from graphite gates. The resulting correlated insulators are metastable, with lifetimes exceeding microseconds. These findings establish an effective mechanism for the ultrafast control of correlated electronic phases in van der Waals heterostructures.

cond-mat.str-el↗

arXiv2025

Angle evolution of the superconducting phase diagram in twisted bilayer WSe2

Recent observations of superconductivity in twisted bilayer WSe$_2$ have extended the family of moiré superconductors beyond twisted graphene. In WSe$_2$ two different twist angles were studied, 3.65° and 5.0°, and two seemingly distinct superconducting phase diagrams were reported, raising the question of whether the superconducting phases in the two devices share a similar origin. Here we address the question by experimentally mapping the evolution of the phase diagram across devices with twist angles spanning the range defined by the initial reports, and comparing the results to twist angle-dependent theory. We find that the superconducting state evolves smoothly with twist angle and at all twist angles is proximal to a Fermi surface reconstruction with, presumably, antiferromagnetic ordering, but is neither necessarily tied to the Van Hove singularity, nor to the half band insulator. Our results connect the previously distinct phase diagrams at 3.65° and 5°, and offer new insight into the origin of the superconductivity in this system and its evolution as the correlation strength increases. More broadly, the smooth phase diagram evolution, repeatability between different devices, and dynamic gate tunability within each device, establish twisted transition metal dichalcogenides as a unique platform for the study of correlated phases as the ratio of interaction strength to bandwidth is varied.

cond-mat.mes-hall↗

arXiv2025

Supersonic flow and hydraulic jump in an electronic de Laval nozzle

In very clean solid-state systems, where carrier-carrier interactions dominate over any other scattering mechanisms, the flow of electrons can be described within a hydrodynamic framework. In these cases, analogues of viscous fluid phenomena have been experimentally observed. However, experimental studies of electron hydrodynamics have so far been limited to the low velocity, linear response regime. At velocities approaching the speed of sound, the electronic fluid is expected to exhibit compressible behaviour where nonlinear effects and discontinuities such as shocks and choked flow have long been predicted. This compressible regime remains unexplored in electronic systems, despite its promise of strongly nonlinear flow phenomena. Here, we demonstrate compressible electron flow in bilayer graphene through an electronic de Laval nozzle, a structure that accelerates charge carriers past the electronic speed of sound, until they slow down suddenly in a shock. Discontinuities in transport measurements and local flattening of potential in Kelvin probe measurements are consistent with a viscous electron shock front and the presence of supersonic electron flow, and are not consistent with Ohmic or ballistic flow. Breaking the sound barrier in electron liquids opens the door for novel, intrinsically nonlinear electronic devices beyond the paradigm of incompressible flow.

cond-mat.mes-hall↗

arXiv2024

Superconductivity in twisted bilayer WSe$_2$

The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other two-dimensional materials such as transition metal dichalcogenides (TMDs). Although a wide range of correlated phenomenon have indeed been observed in the moiré TMDs, robust demonstration of superconductivity has remained absent. Here we report superconductivity in 5 degree twisted bilayer WSe$_2$ (tWSe$_2$) with a maximum critical temperature of 426 mK. The superconducting state appears in a limited region of displacement field and density that is adjacent to a metallic state with Fermi surface reconstruction believed to arise from antiferromagnetic order. A sharp boundary is observed between the superconducting and magnetic phases at low temperature, reminiscent of spin-fluctuation mediated superconductivity. Our results establish that moiré flat-band superconductivity extends beyond graphene structures. Material properties that are absent in graphene but intrinsic among the TMDs such as a native band gap, large spin-orbit coupling, spin-valley locking, and magnetism offer the possibility to access a broader superconducting parameter space than graphene-only structures.

cond-mat.mes-hall↗

arXiv2024

Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves

Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip terahertz (THz) waves. Using common dual-gated device structures, each consisting of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ~0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or the Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control of the material properties, can serve as effective on-chip opto-elastic transducers to generate THz waves for the coherent control and vibrational entanglement of functional layers in commonly used moiré devices.

cond-mat.mes-hall↗

arXiv2023

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure magneto-transport properties of high-purity monolayer WSe$_2$. We measure a record-high hole mobility of 80,000 cm$^2$/Vs and access channel carrier densities as low as $1.6\times10^{11}$ cm$^{-2}$, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurement of correlation-driven quantum phases including observation of a low temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected, and observation of the fractional quantum Hall effect under large magnetic fields. The charge transfer contact scheme paves the way for discovery and manipulation of new quantum phenomena in 2D semiconductors and their heterostructures.

cond-mat.mes-hall↗

arXiv2023

Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer

Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over those in heterobilayers have been predicted to result in exciton ordering. While the dipolar interlayer excitons in the heterobilayer may be ordered by the periodic moiré traps, their mutual repulsion results in de-trapping at exciton density n_ex larger than 10^11 cm^-2 to form mobile exciton gases and further to electron-hole plasmas, both accompanied by broadening in photoluminescence (PL) peaks and large increases in mobility. In contrast, ordered interlayer excitons in the trilayer are characterized by negligible mobility and by sharper PL peaks persisting to n_ex approximately 10^12 cm^-2. We present evidences for the predicted quadrupolar exciton crystal and its transitions to dipolar excitons either with increasing n_ex or by an applied electric field. These ordered interlayer excitons may serve as models for the exploration of quantum phase transitions and quantum coherent phenomena.

cond-mat.mes-hall↗