arXiv subjects

Yiru Zhu

Publications and source records attributed to Yiru Zhu.

3 recordsLinked to original sources

arXiv2025

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in 15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that fully captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph↗

arXiv2024

Helium atom micro-diffraction as a characterisation tool for 2D materials

We present helium atom micro-diffraction as an ideal technique for characterization of 2D materials due to its ultimate surface sensitivity combined with sub-micron spatial resolution. Thermal energy neutral helium scatters from the valence electron density, 2-3A above the ionic cores of a surface, making the technique ideal for studying 2D materials, where other approaches can struggle due to small interaction cross-sections with few-layer samples. Sub-micron spatial resolution is key development in neutral atom scattering to allow measurements from device-scale samples. We present measurements of monolayer-substrate interactions, thermal expansion coefficients, the electron-phonon coupling constant and vacancy-type defect density on monolayer-MoS2. We also discuss extensions to the presented methods which can be immediately implemented on existing instruments to perform spatial mapping of these material properties.

physics.app-ph↗

arXiv2024

Chiral two-dimensional MoS2 by molecular functionalization as ultra-sensitive detectors for circularly polarized light

Inducing chirality in optically and electronically active materials is interesting for applications in sensing and quantum information transmission. Two-dimensional (2D) transition metal chalcogenides (TMDs) possess excellent electronic and optical properties but are achiral. Here we demonstrate chirality induction in atomically thin layers of 2D MoS2 by functionalization with chiral thiol molecules. Analysis of X-ray absorption near-edge structure and Raman optical activity with circularly polarized excitation suggest chemical and electronic interactions that leads chirality transfer from the molecules to the MoS2. We confirm chirality induction in 2D MoS2 with circular dichroism measurements that show absorption bands at wavelengths of 380-520 nm and 520-600 nm with giant molar ellipticity of 10^8 deg cm2/dmol 2-3 orders of magnitude higher than 3D chiral materials. Phototransistors fabricated from atomically thin chiral MoS2 for detection of circularly polarized light exhibit responsivity of >10^2 A/W and maximum anisotropy g-factor of 1.98 close to the theoretical maximum of 2.0, which indicates that the chiral states of photons are fully distinguishable by the photodetectors. Our results demonstrate that it is possible achieve chirality induction in monolayer MoS2 by molecular functionalization and realise ultra-sensitive detectors for circularly polarized photons.

cond-mat.mtrl-sci↗