arXiv subjects

Yisheng Chai

Publications and source records attributed to Yisheng Chai.

53 records · Page 3Linked to original sources

arXiv2021

Giant and robust topological Hall effect in Chiral Magnet Co7Zn8Mn5

Recently, \b{eta}-Mn-type Co-Zn-Mn alloys have gained particular attentions as a new class of chiral magnets hosting skyrmion phase. In this work, a giant topological Hall effect(THE)is observed during the wide temperature range below 220 K in the chiral magnet Co7Zn8Mn5. The maximum topological Hall resistivity, -2.1 μΩ cm, is obtained at 10 K. Moreover, the observed THE effect persists up to Tc, which is mainly derived from the noncoplanar spin structure with scalar spin chirality. In contrast, the formation of skyrmion phase is substantiated at the temperature interval slightly below Tc by adopting the magnetization and ac-susceptibility. Further, the possible signal of skyrmion-conical coexisting phase is found based on the out-of-phase component in magnetoelastic measurements. These results strongly suggest the chiral magnet Co7Zn8Mn5 compound should be an excellent candidate to study the topological magnetic properties and high temperature skyrmions.

cond-mat.str-el↗

arXiv2021

Relevance of sample geometry on the in-plane anisotropy of SrxBi2Se3 superconductor

Possible emergence of nematic superconductivity that breaks its underlying lattice symmetry in doped topological insulator Bi$_2$Se$_3$,establishes this system as a unique candidate of topological superconductors. Exclusion of possible extrinsic causes for the two-fold superconductivity is essential to clarify its topological nature. Here, we present electrical transport on Sr$_x$Bi$_2$Se$_3$ superconductors with rectangular and circular geometries. The occurrence of the two-fold symmetric in-plane upper critical field $H_{c2}$ is found to be weakly geometry dependent. However, the anisotropic ratio between the maximum and minimum in-plane upper critical fields varies significantly among samples with different shapes. Compared with the rectangular sample, the anisotropic ratio is largely suppressed in the circular sample which has higher geometric rotational symmetry. Our results imply that sample geometry plays a subdominant role, but circular shape is more ideal to reveal the two-fold superconductivity of Sr$_x$Bi$_2$Se$_3$ in the vortex state.

cond-mat.supr-con↗

arXiv2021

Angle dependent field-driven reorientation transitions in uniaxial antiferromagnet MnBi$_2$Te$_4$ single crystal

MnBi$_2$Te$_4$, a two-dimensional magnetic topological insulator with a uniaxial antiferromagnetic structure, is an ideal platform to realize quantum anomalous Hall effect. However, the strength of magnetic interactions is not clear yet. We performed systematic studies on the magnetization and angle dependent magnetotransport of MnBi$_2$Te$_4$ single crystal. The results show that the direction of the magnetic field has significant effects on the critical field values and magnetic structure of this compound, which leads to different magnetotransport behaviors. The field-driven reorientation transitions can be utilized to estimate the AFM interlayer exchange interaction coupling and uniaxial magnetic anisotropy D. The obtained Hamiltonian can well explain the experimental data by Monte Carlo simulations. Our comprehensive studies on the field-driven magnetic transitions phenomenon in MnBi$_2$Te$_4$ provide a general approach for other topological systems with antiferromagnetism.

cond-mat.mtrl-sci↗

arXiv2021

The microscopic origin of the spin-induced linear and quadratic magnetoelectric effects

Understanding of the intimate cross-coupling between electric and magnetic degrees of freedom in solids usually requires sophisticated models and time-consuming calculation methods. Instead of macroscopic symmetry analysis, we present a simple but general approach to explore the microscopic mechanism of magnetoelectric (ME) effects in magnetic ordered materials based on local spin and lattice symmetry analysis. Our methods are successfully applied to Cr$_2$O$_3$ and orthorhombic RMnO$_3$ with linear and quadratic ME effects, respectively. We revealed all the possible microscopic origins of every non-zero ME coefficients that cannot be easily fulfilled by other theoretical methods. Moreover, the contribution from each mechanism can be located down to specific spins or spin pairs. Our theoretical approach is capable of providing a detailed guide to explore rich spin-induced magnetoelectrics with strong ME effects.

cond-mat.mtrl-sci↗

arXiv2021

Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor

We present a study of Seebeck and Nernst effect in combination with magnetoresistance and Hall measurements of the Kagome superconductor CsV$_3$Sb$_5$. Sizable magneto-Seebeck signal appears once the charge density wave (CDW) order sets in below $T_{CDW}$=94 K. The Nernst signal peaks at a lower temperature $T^*$=35 K, crossing which the Hall coefficient switches sign, which we attribute to the ambipolar transport of compensated bands due to the multi-band nature of CsV$_3$Sb$_5$. Sublinear Nernst signal as a function of magnetic field, together with large anomalous Nernst effect (ANE) also emerge inside the CDW phase, despite the absence of long-range magnetic order. These findings suggest that, the transport properties are dominated by small pockets with multi-band profile, and that the unusual band topology also plays an import role in the CDW state of CsV$_3$Sb$_5$.

cond-mat.supr-con↗

arXiv2021

Probing magnetic symmetry in antiferromagnetic Fe4Nb2O9 single crystals by linear magnetoelectric tensor

In the present study, we investigated magnetodielectric, magnetoelectric (ME), and angular-dependent polarization in single-crystal Fe4Nb2O9. The magnetodielectric effects in epsilon(x) (x//[100]), epsilon(y) (y//[120]), and epsilon(z) (z//[001]) are found to be significant only around T-N approximate to 95 K when magnetic fields are applied along three orthogonal x-, y- (y//[120]), and z directions. The finite polarization P-x, P-y, and P-z of 70, 100, and 30 mu C/m(2), respectively, can be induced in the antiferromagnetic phase when a finite magnetic field up to 9 T is applied along the three orthogonal directions. The angular-dependent polarization measurements verify the dominating linear ME effects below T-N. From the above experimental results, a linear ME tensor a(ij) with all nine nonzero components can be inferred, demonstrating a much lower magnetic point group of -1' for the canted antiferromagnetic configuration.

cond-mat.mtrl-sci↗

arXiv2021

Probe Skyrmion phases and dynamics in MnSi via the magnetoelectric effect in a composite configuration

We have developed a sensitive technique to probe the magnetic skyrmion phases and dynamics by employing the interfacial coupling effect in a magnetoelectric composite configuration. The study on a MnSi single crystal sample using this technique provides clear evidences for the skyrmion lattice phase and coexistence of skyrmion and conical phase. Above the Curie temperature TC, a region with strong spin fluctuation is revealed as well. By tuning the density of Skyrmion or disorder, a transition from the skyrmion lattice to skyrmion-conical coexisting phase is observed. The observation is in good agreement with a theoretical model which predicts the dissipation behavior in the coexistence phase.

cond-mat.mtrl-sci↗

arXiv2021

Stacking faults in $α$-RuCl$_3$ revealed by local electric polarization

We present out-of-plane dielectric and magnetodielectric measurements of single crystallines $α$-RuCl$_3$ with various degrees of stack faults. A frequency dependent, but field independent, dielectric anomaly appears at $T_{A}\:(f=100\:\mathrm{kHz})\sim$ 4 K once both magnetic transitions at $T_{N1}\sim$ 7 K and $T_{N2}\sim$ 14 K set in. The observed dielectric anomaly is attributed to the emergency of possible local electric polarizations whose inversion symmetry is broken by inhomogeneously distributed stacking faults. A field-induced intermediate phase is only observed when a magnetic field is applied perpendicular to the Ru-Ru bonds for samples with minimal stacking faults. Less pronounced in-plane anisotropy is found in samples with sizable contribution from stacking imperfections. Our findings suggest that dielectric measurement is a sensitive probe in detecting the structural and magnetic properties, which may be a promising tool especially in studying $α$-RuCl$_3$ thin film devices. Moreover, the stacking details of RuCl$_3$ layers strongly affect the ground state both in the magnetic and electric channels. Such a fragile ground state against stacking faults needs to be overcome for realistic applications utilizing the magnetic and/or electric properties of Kitaev based physics in $α$-RuCl$_3$.

cond-mat.str-el↗

arXiv2020

Magnetic mixed valent semimetal EuZnSb$_2$ with Dirac states in the band structure

We report discovery of new antiferromagnetic semimetal EuZnSb$_2$, obtained and studied in the form of single crystals. Electric resistivity, magnetic susceptibility and heat capacity indicate antiferromagnetic order of Eu with $T_N$ = 20 K. The effective moment of Eu$^{2+}$ inferred from the magnetization and specific heat measurement is 3.5 $μ_B$, smaller than the theoretical value of Eu$^{2+}$ due to presence of both Eu$^{3+}$ and Eu$^{2+}$. Magnetic field-dependent resistivity measurements suggest dominant quasi two dimensional Fermi surfaces whereas the first-principle calculations point to the presence of Dirac fermions. Therefore, EuZnSb$_2$ could represent the first platform to study the interplay of dynamical charge fluctuations, localized magnetic 4$f$ moments and Dirac states with Sb orbital character.

cond-mat.str-el↗

arXiv2016

Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic "1"), positive low (logic "0"), or negative (logic "0"), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.

cs.ET↗

arXiv2016

A multilevel nonvolatile magnetoelectric memory based on memtranstor

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

cond-mat.mtrl-sci↗

arXiv2016

A non-volatile memory based on nonlinear magnetoelectric effects

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.

cond-mat.mtrl-sci↗

arXiv2015

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Towards the Complete Relational Graph of Fundamental Circuit Elements

A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In addition to resistor, capacitor and inductor which are defined in terms of a linear relationship between the charge q, the current i, the voltage v, and the magnetic flux, Chua proposed in 1971 the fourth linear circuit element to directly relate magnetic flux and charge. A non-linear resistive device defined in memory i-v relation and dubbed memristor, was later attributed to such an element and has been realized in various material structures. Here we clarify that the memristor is not the true fourth fundamental circuit element but the memory extension to the concept of resistor, in analogy to the extension of memcapacitor to capacitor and meminductor to inductor. Instead, a two-terminal device employing the linear magnetoelectric effects, termed transtor, possesses the function of relating directly flux and charge and should take the position of the fourth linear element. Moreover, its memory extension, termed memtranstor, is proposed and analyzed here.

cond-mat.mes-hall↗

arXiv2013

Giant exchange bias in a single-phase magnet with two magnetic sublattices

Exchange bias phenomenon is generally ascribed to the exchange coupling at the interfaces between ferromagnetic and antiferromagnetic layers. Here, we propose a bulk form of exchange bias in a single-phase magnet where the coupling between two magnetic sublattices induces a significant shift of the coercive field after a field cooling. Our experiments in a complicated magnet YbFe2O4 demonstrate a giant exchange bias at low temperature when the coupling between the Yb3+ and Fe2+/Fe3+ sublattices take places. The cooling magnetic field dependence and the training effect of exchange bias are consistent with our model. In strong contrast to conventional interfacial exchange bias, this bulk form of exchange bias can be huge, reaching the order of a few Tesla.

cond-mat.str-el↗

arXiv2012

Theoretical Modeling of ME effect at Low frequency and Resonance Frequency for Magnetoelectric Laminates with Anisotropic Piezoelectric Properties

A new theory is developed for the magnetoelectric (ME) coupling in a symmetric 2-2 ME laminate having a representative piezoelectric crystal (PMN-PT) particularly with anisotropic piezoelectric properties. Considering the average field method, the theoretical expressions for the transverse ME voltage coefficients at low and resonance frequencies were derived. The theory takes into account the anisotropic properties of the piezoelectric materials providing two different expressions of transverse ME voltage coefficients for different in-plane magnetic fields both at low and resonance frequencies. The numerical simulations show multiple resonance frequencies and phase differences between transverse ME voltage coefficients showing good agreement with the experimental results. Our theory should be generally applicable to other ME laminates with any piezoelectric with anisotropic piezoelectric coefficients.

cond-mat.mtrl-sci↗

arXiv2010

Thermal Transport Properties of Bechgaard Salts (TMTSF)2PF6 and (TMTSF)2ClO4: Implication of Spin-Charge Separation

We report thermal transport measurements performed on the quasi-one-dimensional Bechgaard salts (TMTSF)2ClO4 and (TMTSF)2PF6 along the a-direction. For both salts, magnon-drag effects are found to contribute considerably to thermopower above 80 K. These results imply spin-charge separation in the metallic state for both salts. Moreover, a linear temperature-dependent thermal conductivity is found to be unaffected by anion disorder below an anion ordering transition temperature TAO~25 K in (TMTSF)2ClO4.

cond-mat.str-el↗