arXiv subjects

Yitian Tong

Publications and source records attributed to Yitian Tong.

7 recordsLinked to original sources

arXiv2026

Overcoming noise-agility trade-off in integrated lasers for precision sensing

Lasers that combine narrow linewidths with rapid tunability are critical for applications such as coherent optical ranging, distributed fiber-optic sensing, and precision spectroscopy. Despite significant progress in integrated laser technologies, the concurrent realization of low phase noise and frequency agility on a single integrated platform remains challenging owing to a fundamental architectural trade-off: conventional integrated laser designs typically suppress phase noise via high-$Q$ resonators, yet the extended photon lifetimes inherent to such resonators intrinsically constrain tuning speed. Here, we address this noise-agility trade-off by introducing a laser architecture that achieves ultralow phase noise and ultrafast tunability simultaneously. Rather than relying on ultrahigh-$Q$ resonators for self-injection locking, our design employs strong synthetic feedback within a Pockels-tunable, resonator-enhanced distributed Bragg reflector to suppress phase noise. As a proof of concept, we demonstrate a hybrid integrated laser with a short-term linewidth of 29 Hz, realized using a lithium niobate external cavity with a loaded $Q$ of only 0.62 million. The adoption of a moderate resonator $Q$ relaxes the photon-lifetime constraint on tuning speed, enabling sub-exahertz-per-second tuning rates and a chirp nonlinearity as low as 0.14%. Leveraging this laser, we implement a frequency-modulated continuous-wave LiDAR system that achieves a relative ranging precision of $1.7 \times 10^{-4}$ at a measurement rate of $1\,\text{MSa s}^{-1}$, without requiring complex chirp linearization techniques. We further demonstrate fiber-optic acoustic sensing capable of detecting sub-$\mu\epsilon$ dynamic strain, underscoring the platform's versatility for high-speed precision optical measurements. Our work provides a route toward cost-effective yet high-performance sensing and metrology systems.

physics.optics↗

arXiv2026

Meter-long broadband chirped Bragg gratings for on-chip dispersion control and pulse shaping

Precise on-chip dispersion control is essential for advanced integrated photonic technologies, enabling applications ranging from high-speed communications and sensing to signal processing and biomedical imaging. However, existing on-chip dispersion control methods still suffer from substantial loss and a limited dispersion-bandwidth product (DBP) far from application needs. As a result, on-chip systems continue to rely exclusively on off-chip dispersion control solutions provided by optical fiber or bulky free-space optics. To overcome these limitations, we design and fabricate meter-long chirped spiral Bragg gratings (CSBGs) on the ultra-low-loss silicon nitride (SiN) photonic platform for advanced dispersion control. Our device achieves a 10-nanosecond group delay with customizable bandwidths exceeding 10 nanometers within a compact footprint of only 30 $\text {mm} ^2$, surpassing the physical limits of fiber-based grating devices. More importantly, CSBGs can simultaneously possess the characteristics of high stability, low latency, and a large DBP, thanks to the ultra-low-loss SiN platform with a loss of only 0.3 dB/m. Leveraging the precise and stable dispersion profile, we demonstrate high-fidelity pulse shaping and compression of electro-optic frequency combs (EOCs) with a 1-GHz repetition rate centered across the entire reflection bandwidth. The compressed pulse has an on-chip peak (average) power of 21.6 watts (580 milliwatts). Furthermore, we showcase for the first time the application of on-chip pulse-compressed EOC in wavelength-swept coherent anti-Stokes Raman scattering (CARS) microscopy. Our work provides integrated photonics with a long-sought, scalable, and robust solution for high-performance on-chip dispersion control, empowering a new generation of on-chip functionalities.

physics.optics↗

arXiv2026

Scalable 3D silicon nitride photonic interposer for high-density optical interconnects

Modern computing workloads demand energy-efficient, high-bandwidth interconnects, motivating photonic interposers as an alternative to electrical links. Here we demonstrate a compact 3D silicon nitride (SiN) photonic interposer prototype comprising two routing layers, with the 3D routing scheme optimized by a global optimization algorithm. The 3D interposer realizes a fully connected 12-node optical network that reduces the total number of intralayer crossings from 495 for all-planar routing to merely 150 (69.7% reduction), below the theoretical lower bound of 153 for all-planar interconnects. Comparing the two schemes, our 3D design achieves a 45.8% reduction experimentally in the average loss per waveguide. The proposed 3D routing architecture also features inherent symmetry and is scalable to higher node counts, flexible node placements, additional routing layers, and other operating wavelengths, enabling denser, lower-loss photonic interposers for next-generation scale-up and high-performance computing (HPC) systems.

physics.optics↗

arXiv2025

Magnetic properties of molecular beam epitaxy-grown ultrathin Cr2Ge2Te6 films down to monolayer limit on Si substrates

Cr2Ge2Te6, a prototypical van der Waals ferromagnetic semiconductor, have attracted significant interest for its potential applications in high-performance spintronics. However, the magnetic ground state of monolayer Cr2Ge2Te6 remains elusive due to fragile and irregular-shaped thin flake samples with weak magnetic signals. Here, we successfully grow uniform ferromagnetic Cr2Ge2Te6 films down to monolayer by molecular beam epitaxy. By exploiting a self-limiting growth mode, we achieve synthesis of uniform monolayer Cr2Ge2Te6 films across entire millimeter-scale Si substrates. Through a combination of superconducting quantum interference device magnetometry and anomalous Hall effect measurements, we establish that monolayer Cr2Ge2Te6 exhibits intrinsic ferromagnetism with perpendicular magnetic anisotropy below ~10 K, albeit with strong magnetic fluctuations characteristic of its two-dimensional nature. Furthermore, a systematic thickness-dependent study reveals a crossover from this fluctuation-dominated two-dimensional magnetism turns into conventional long-range ferromagnetic order as the film thickness increases. Our work not only definitively establishes the intrinsic ferromagnetic ground state of monolayer Cr2Ge2Te6, but also provides a scalable, silicon-compatible route for preparing the two-dimensional magnet for future spintronic or quantum devices.

cond-mat.mtrl-sci↗

arXiv2024

Interplay between electronic dephasing and localization in finite-sized Chern insulator

Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a large predicted magnetic gap. Here, employing varying sized MnBi2Te4 micro/nano-structures fabricated from a single molecular-beam-epitaxy-grown thin film, we have carried out a systematic size- and temperature-dependent study on the transport properties of the films regarding the quantum anomalous Hall states. The low-temperature transport properties of the finite-sized MnBi2Te4 samples can be quantitatively understood through Anderson localization, which plays an indispensable role in stabilizing the ground states. At higher temperatures, the failure of electron localization induced by an excessively short electronic dephasing length is identified as the cause of deviation from quantization. The work reveals that electronic dephasing and localization are non-negligible factors in designing high-temperature quantum anomalous Hall systems.

cond-mat.mes-hall↗

arXiv2024

Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films

We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field sweeping indicates that the magnetic domains or the spatial nonuniformity of magnetization originates from the strong pinning of the inherent sample inhomogeneity. A direct correlation between the Hall resistivity and the domain size has been established by analyzing a series of thin films with and without QAH. Our observation shows that one has to suppress the spatial nonuniformity of magnetization to allow the Hall resistivity to be quantized. The fact that a sizable longitudinal resistivity remains even for the QAH sample suggests a quantized Hall insulator scenario. Our work provides important insights to the understanding of the quantization mechanism and the dissipation of the QAH state in MnBi2Te4 system.

cond-mat.mes-hall↗

arXiv2024

Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films

In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization.

cond-mat.mes-hall↗