arXiv subjects

Yiwei Peng

Publications and source records attributed to Yiwei Peng.

7 recordsLinked to original sources

arXiv2024

Photonic KAN: a Kolmogorov-Arnold network inspired efficient photonic neuromorphic architecture

Kolmogorov-Arnold Networks (KAN) models were recently proposed and claimed to provide improved parameter scaling and interpretability compared to conventional multilayer perceptron (MLP) models. Inspired by the KAN architecture, we propose the Photonic KAN -- an integrated all-optical neuromorphic platform leveraging highly parametric optical nonlinear transfer functions along KAN edges. In this work, we implement such nonlinearities in the form of cascaded ring-assisted Mach-Zehnder Interferometer (MZI) devices. This innovative design has the potential to address key limitations of current photonic neural networks. In our test cases, the Photonic KAN showcases enhanced parameter scaling and interpretability compared to existing photonic neural networks. The photonic KAN achieves approximately 65$\times$ reduction in energy consumption and area, alongside a 50$\times$ reduction in latency compared to previous MZI-based photonic accelerators with similar performance for function fitting task. This breakthrough presents a promising new avenue for expanding the scalability and efficiency of neuromorphic hardware platforms.

physics.optics↗

arXiv2024

Observation of scale-free localized states induced by non-Hermitian defects

Wave localization is a fundamental phenomenon that appears universally in both natural materials and artificial structures and plays a crucial role in understanding the various physical properties of a system. Usually, a localized state has an exponential profile with a localization length independent of the system size. Here, we experimentally demonstrate a new class of localized states called scale-free localized states, which has an unfixed localization length scaling linearly with the system size. Using circuit lattices, we observe that a non-Hermitian defect added to a Hermitian lattice induces an extensive number of states with scale-free localization. Furthermore, we demonstrate that, in a lattice with a parity-time-symmetric non-Hermitian defect, the scale-free localization emerges because of spontaneous parity-time symmetry breaking. Our results uncover a new type of localized states and extend the study of defect physics to the non-Hermitian regime.

cond-mat.mes-hall↗

arXiv2024

Silicon Optical Memory: Non-Volatile Optoelectronic Devices via Si-SiO$_2$ Hysteresis Effect

Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits. Here, a novel optical memory has been demonstrated exclusively using the semiconductor primary material, silicon. By manipulating the optoelectronic effect of this device, we introduce a hysteresis effect at the silicon-silicon oxide interface, which in turn demonstrates multi-level, non-volatile optical data storage with robust retention and endurance. This new silicon optical memory provides a distinctively simple and accessible route to realize optical data storage in standard silicon foundry processes.

physics.app-ph↗

arXiv2023

Energy-Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters

We demonstrate non-volatile optical functionality by embedding multi-layer $HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), and (de-)interleaver filters. The MZI optical memristor exhibits non-volatile optical phase shifts $> \pi (\Delta n_{g} > 2.70 \times 10^{-3}$) with ~ 30 dB extinction ratio while consuming 0 electrical power consumption in a true "set-and-forget" operation. We demonstrate 6 non-volatile states with each state capable of 4 Gbps modulation. III-V/Si (de-)interleavers were also demonstrated to exhibit memristive non-volatile passband transformation with full set/reset states. Time duration tests were performed on all devices and indicated non-volatility up to 24 hours and most likely beyond. To the best of our knowledge, we have demonstrated for the first time, non-volatile III-V/Si optical memristors with the largest electric-field driven phase shifts and reconfigurable filters with the lowest power consumption.

physics.optics↗

arXiv2023

Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory

We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), asymmetric MZI lattice filters, and ring resonator filters. The MZI CTM exhibits full write/erase operation (100 cycles with 500 states) with wavelength shifts of $\Delta\lambda_{non-volatile} = 1.16 nm$ ($\Delta n_{eff,non-volatile} ~ 2.5 \times 10^{-4}$) and a dynamic power consumption $<$ 20 pW (limited by measurement). Multi-bit write operation (2 bits) is also demonstrated and verified over a time duration of 24 hours and most likely beyond. The cascaded 2nd order ring resonator CTM filter exhibited an improved ER of ~ 7.11 dB compared to the MZI and wavelength shifts of $\Delta\lambda_{non-volatile} = 0.041 nm$ ($\Delta n_{eff, non-volatile} = 1.5 \times 10^{-4}$) with similar pW-level dynamic power consumption as the MZI CTM. The ability to co-locate photonic computing elements and non-volatile memory provides an attractive path towards eliminating the von-Neumann bottleneck.

physics.optics↗

arXiv2022

Observation of Topological Corner State Arrays in Photonic Quasicrystals

Recently, the studies of topological corner states (TCSs) are extended from crystals to quasicrystals, which are referred to as higher-order topological quasicrystalline insulators (HOTQIs). However, the TCSs of complete quasi-periodic structure in photonic systems have yet to be demonstrated. Moreover, there is only one TCS in each corner region in higher-order topological insulators (HOTIs). Increasing the number of TCS is expected to increase application potential of TCSs. In this work, HOTQIs in photonic systems are experimentally observed. It is found that HOTQIs possess TCS arrays, and each TCS array contains several TCSs. Furthermore, the universal theoretical framework of the multimer analysis method is improved, and the difference in the average charge density is proposed as a real-space topological index. These results will open up new ideas for investigating highly integrated, multi-region localized TCSs and are expected to provide new ways to explore topological phenomena and the applications of photonic quasicrystals.

cond-mat.mtrl-sci↗

arXiv2021

Multifrequency and multimode topological waveguides in a Stampfli-triangle photonic crystal with large valley Chern numbers

The multifrequency quantum valley Hall effect (QVHE) with a large valley Chern number has been realized to significantly improve the transmission capacity of topological waveguides and increase the mode density of topological waveguides. However, multifrequency and multimode QVHEs have not been realized simultaneously. In this work, using tight-binding model calculations and numerical simulations, a valley photonic crystal (VPC) consisting of a Stampfli-triangle photonic crystal is constructed, and its multiple degeneracies in the low-frequency and high-frequency bands split simultaneously to realize the QVHE with multiple topological edge states (TESs). The multifrequency and multimode topological transmission with two low-frequency modes and four high-frequency modes is realized by means of simulations and experiments through a Z-shaped waveguide constructed using two VPCs with opposite valley Chern numbers to prove the realization of a large valley Chern number in the two frequency bands. The two low-frequency modes are successfully distinguished with position-dependent selective excitations, which experimentally demonstrates the occurrence of a large valley Chern number. A frequency-dependent multimode beam splitter is theoretically proposed for high-performance integrated photonic device applications. These results provide new ideas for high-efficiency and high-capacity optical transmission and communication devices and their integration; furthermore, they broaden the application range of TESs.

physics.optics↗