arXiv subjects

Yoav Kalcheim

Publications and source records attributed to Yoav Kalcheim.

30 records · Page 2Linked to original sources

arXiv2020

Resistive switching in reverse: voltage driven formation of a transverse insulating barrier

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting filaments parallel to the current flow, has been an active research topic. Here we present the discovery of an opposite, metal-to-insulator switching that proceeds via nucleation and growth of an insulating barrier perpendicular to the driving current. The barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. Electrically inducing a transverse barrier enables a novel approach to voltage-controlled magnetism. By triggering a metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism can be achieved by a global voltage bias applied to the whole device.

cond-mat.mtrl-sci↗

arXiv2020

Quantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator

Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, we report on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. We studied the resistive switching properties of both pristine and ion-irradiated VO2 thin film devices by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically-driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs non-thermally, well below the transition temperature. Our results provide the first direct evidence for non-thermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

cond-mat.mes-hall↗

arXiv2020

Controlling Metal-Insulator Transitions in Vanadium Oxide Thin Films by Modifying Oxygen Stoichiometry

Vanadium oxides are strongly correlated materials which display metal-insulator transitions as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control oxygen stoichiometry in these materials, especially in thin films. This work demonstrates a high-vacuum gas evolution technique which allows for the modification of oxygen concentration in VOX thin films by carefully tuning thermodynamic conditions. We were able to control the evolution between VO2, V3O5, and V2O3 phases on sapphire substrates, overcoming the narrow phase stability of adjacent Magnéli phases. A variety of annealing routes were found to achieve the desired phases and eventually to control the metal-insulator transition (MIT). The pronounced MIT of the transformed films along with the detailed structural investigations based on x-ray diffraction measurements and reciprocal space mapping show that optimal stoichiometry is obtained and stabilized. Using this technique, we find that the thin film V-O phase diagram differs from that of the bulk material due to strain and finite size effects. Our study demonstrates new pathways to strategically tune the oxygen stoichiometry in complex oxides and provides a roadmap for understanding the phase stability of VOX thin films.

cond-mat.mtrl-sci↗

arXiv2019

Intertwined magnetic, structural, and electronic transitions in V$_2$O$_3$

We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation, x-ray diffraction, and nanoscale-resolved near-field infrared spectroscopic techniques. The measurements provide a detailed characterization of the thermal evolution of the magnetic, structural, and electronic phase transitions occurring in a wide temperature range, including quantitative measurements of the high- and low-temperature phase fractions for each transition. The results reveal a stable coexistence of the high- and low-temperature phases over a broad temperature range throughout the transition. Careful comparison of temperature dependence of the different measurements, calibrated by the resistance of the sample, demonstrates that the electronic, magnetic, and structural degrees of freedom remain tightly coupled to each other during the transition process. We also find evidence for antiferromagnetic fluctuations in the vicinity of the phase transition, highlighting the important role of the magnetic degree of freedom in the metal-insulator transition.

cond-mat.str-el↗

arXiv2019

Non-Thermal Resistive Switching in Mott Insulators

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying nanowires of two archetypical Mott insulators - VO2 and V2O3. Our findings show a crossover between two qualitatively different regimes. In one, the IMT is driven by Joule heating to the transition temperature, while in the other, field-assisted carrier generation gives rise to a doping driven IMT which is purely non-thermal. By identifying the key material properties governing these phenomena, we propose a universal mechanism for resistive switching in Mott insulators. This understanding enabled us to control the switching mechanism using focused ion-beam irradiation, thereby facilitating an electrically driven non-thermal IMT. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state of the art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

cond-mat.str-el↗

arXiv2019

A caloritronics-based Mott neuristor

Machine learning imitates the basic features of biological neural networks to efficiently perform tasks such as pattern recognition. This has been mostly achieved at a software level, and a strong effort is currently being made to mimic neurons and synapses with hardware components, an approach known as neuromorphic computing. CMOS-based circuits have been used for this purpose, but they are non-scalable, limiting the device density and motivating the search for neuromorphic materials. While recent advances in resistive switching have provided a path to emulate synapses at the 10 nm scale, a scalable neuron analogue is yet to be found. Here, we show how heat transfer can be utilized to mimic neuron functionalities in Mott nanodevices. We use the Joule heating created by current spikes to trigger the insulator-to-metal transition in a biased VO2 nanogap. We show that thermal dynamics allow the implementation of the basic neuron functionalities: activity, leaky integrate-and-fire, volatility and rate coding. By using local temperature as the internal variable, we avoid the need of external capacitors, which reduces neuristor size by several orders of magnitude. This approach could enable neuromorphic hardware to take full advantage of the rapid advances in memristive synapses, allowing for much denser and complex neural networks. More generally, we show that heat dissipation is not always an undesirable effect: it can perform computing tasks if properly engineered.

cs.ET↗

arXiv2017

p-wave triggered superconductivity in single layer graphene on an electron-doped oxide superconductor

Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity is predicted in single layer graphene where the electrons pair with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing single layer graphene on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in single layer graphene. The realization of unconventional superconductivity in single layer graphene offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.

cond-mat.supr-con↗

arXiv2015

Inverse proximity effect at superconductor-ferromagnet interfaces: Evidence for induced triplet pairing in the superconductor

Considerable evidence for proximity-induced triplet superconductivity on the ferromagnetic side of a superconductor-ferromagnet (S-F) interface now exists; however, the corresponding effect on the superconductor side has hardly been addressed. We have performed scanning tunneling spectroscopy measurements on NbN superconducting thin films proximity coupled to the half-metallic ferromagnet La2/3Ca1/3MnO3 (LCMO) as a function of magnetic field. We have found that at zero and low applied magnetic fields the tunneling spectra on NbN typically show an anomalous gap structure with suppressed coherence peaks and, in some cases, a zero-bias conductance peak. As the field increases to the magnetic saturation of LCMO where the magnetization is homogeneous, the spectra become more BCS-like and the critical temperature of the NbN increases, implying a reduced proximity effect. Our results therefore suggest that triplet-pairing correlations are also induced in the S side of an S-F bilayer.

cond-mat.supr-con↗

arXiv2013

Signature of proximity induced triplet superconductivity in junctions made of the doped topological insulator $\rm Bi_2Se_3$ and the s-wave superconductor NbN

Thin film junctions and bilayers of the doped topological insulator $\rm Bi_2Se_3$ and the s-wave superconductor NbN were found to exhibit conductance spectra with prominent zero bias and coherence peaks. Various tunneling models with different pair potentials have failed to fit our data, except for the triplet $p_x+ip_y$ pair potential, which breaks time reversal symmetry, but yielded reasonably good fits. This provides evidence for proximity induced triplet superconductivity in the $\rm Bi_2Se_3$ layer near the interface with the NbN film.

cond-mat.supr-con↗

arXiv2011

Increased superconducting transition temperature of a niobium thin-film proximity-coupled to gold nanoparticles using linking organic molecules

The superconducting critical temperature, TC, of thin Nb films is significantly modified when gold nanoparticles (NPs) are chemically linked to the Nb film, with a consistent enhancement when using 3 nm long disilane linker molecules. The TC increases by up to 10% for certain linker length and NPs size. No change is observed when the nanoparticles are physisorbed with non-linking molecules. Electron tunneling spectra acquired on the linked NPs below TC typically exhibit zero-bias peaks. We attribute these results to a pairing mechanism coupling electrons in the Nb and the NPs, mediated by the organic linkers.

cond-mat.supr-con↗

arXiv2010

Long range proximity effect in La2/3Ca1/3MnO3 (LCMO)/(100)YBa2Cu3O7-delta (YBCO) ferromagnet/superconductor bilayers: Evidence for induced triplet superconductivity in the ferromagnet

Scanning tunneling spectroscopy measurements conducted on epitaxially grown bilayers of half-metallic ferromagnetic La2/3Ca1/3MnO3 (LCMO) on superconducting (SC) (100)YBa2Cu3O7-delta (YBCO) reveal long-range penetration of superconducting order into the LCMO. This anomalous proximity effect manifests itself in the tunneling spectra measured on the LCMO layer as gaps and zero bias conductance peaks. Remarkably, these proximity-induced spectral features were observed for bilayers with LCMO thickness of up to 30 nm, an order of magnitude larger than the expected ferromagnetic coherence length in LCMO. We argue that this long-range proximity effect can be accounted for by the formation of spin triplet pairing at the LCMO side of the bilayer due to magnetic inhomogeneity at the interface or at domain walls. Possible symmetries of the induced order parameter are discussed.

cond-mat.supr-con↗

arXiv2009

A proximity induced pseudogap - evidence for preformed pairs

The temperature evolution of the proximity effect in Au/La$_{2-x}$Sr$_x$CuO$_4$ and La$_{1.55}$Sr$_{0.45}$CuO$_4$/La$_{2-x}$Sr$_x$CuO$_4$ bilayers was investigated using scanning tunneling microscopy. Proximity induced gaps, centered at the chemical potential, were found to persist above the superconducting transition temperature, $T_c$, and up to nearly the pseudogap crossover temperature in both systems. Such independence of the spectra on the details of the normal metal cap layer is incompatible with a density-wave order origin. However, our results can be accounted for by a penetration of incoherent Cooper pairs into the normal metal above $T_c$.

cond-mat.supr-con↗