arXiv subjects

Yogendra Limbu

Publications and source records attributed to Yogendra Limbu.

8 recordsLinked to original sources

arXiv2026

Electronic structure, magnetic interactions, and magnonics of 2D trichloride materials

Using advanced density functional theory, this study demonstrates the robust thermodynamic, structural, and dynamical stability of pristine, 3d-doped (Ti, Cr), and 4f-doped (Ce) transition metal trichlorides (MCl3). While standard generalized gradient approximation (GGA) incorrectly predicts metallic behavior, hybrid functional calculations successfully capture their semiconducting nature, yielding accurate band gaps of 2.54 eV (VCl3), 4.01 eV (CrCl3), and 2.61 eV (TiCl3). These materials exhibit intrinsic ferromagnetism, with CrCl3 displaying overlapping topological features in both its magnon and phonon dispersions along the high-symmetry K direction, which induces magnon-phonon coupling. Incorporating 3d dopants into VCl3 successfully tunes the bandgap (1.32 eV for Ti and 2.74 eV for Cr) without destroying ferromagnetism, while 4f Ce-doping in CrCl3 introduces localized states below the Fermi level that yield strong nearest-neighbor exchange coupling. Ultimately, this electronic and magnetic tunability highlights the potential of these 2D trichlorides in advanced spintronic functionalities.

cond-mat.mtrl-sci↗

arXiv2026

A defect in diamond with millisecond-scale spin relaxation time at room temperature

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times ($T_1$) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a $T_1$ of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed $T_1$ is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time ($T_2$) is 246(7) $\mu$s, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Coherence of Rare-Earth Ions in Heterogeneous Photonic Interfaces

Harnessing rare-earth ions in oxides for quantum networks requires integration with bright emitters in III-V semiconductors, but local disorder and interfacial noise limit their optical coherence. Here, we investigate the microscopic origins of the ensemble spectrum in Er$^{3+}$:TiO$_2$ epitaxial thin films on GaAs and GaSb substrates. Ab initio calculations combined with noise-Hamiltonian modeling and Monte Carlo simulations quantify the effects of interfacial and bulk spin noise and local strain on erbium crystal-field energies and inhomogeneous linewidths. Photoluminescence excitation spectroscopy reveals that Er$^{3+}$ ions positioned at increasing distances from the III-V/oxide interface produce a systematic blue shift of the $Y_1\rightarrow Z_1$ transition, consistent with strain relaxation predicted by theory. Thermal annealing produces a compensating redshift and linewidth narrowing, isolating the roles of oxygen-vacancy and gallium-diffusion noise. These results provide microscopic insight into disorder-driven decoherence, offering pathways for precise control of hybrid quantum systems for scalable quantum technologies.

quant-ph↗

arXiv2025

Functionalized Cr$_2$C MXenes: Novel Magnetic Semiconductors

We report an \textit{ab initio} investigation of functionalized and 3$d$-electrons doped Cr$_2$C MXenes. Upon functionalization, the Cr$_2$C becomes chemically, dynamically, and mechanically stable, and it exhibits magnetic semiconducting behavior. Cr$_2$CF$_2$ stands out as a wide band gap semiconductor, possessing super exchange interaction mediated by F atoms within the layer, however, the applied strain transforms it from an indirect to a direct band gap semiconductor. Strong spin-phonon coupling found in Cr$_2$CH$_2$ is supported by the distorted Cr spin density due to hydrogen environment. Two magnon branches, associated with two sub-lattice spins, are found in the ferromagnetic Cr$_2$CO$_2$ and antiferromagnetic Cr$_2$CF$_2$. Depending on the types of 3$d$-electron dopants and functionalization, Cr$_2$C MXenes (except for Cr$_2$CO$_2$) change from the indirect band gap magnetic semiconductor to different states of electronic and magnetic matter including exotic direct band gap magnetic bipolar semiconductor. In addition, we reveal a band inversion between the two highest valence bands in the Fe-doped Cr$_2$CCl$_2$.

cond-mat.mtrl-sci↗

arXiv2025

Singly occupied 4$f$ antiferromagnetic insulators: CePO$_4$ and CeVO$_4$

Rare-earth containing wide band gap oxides, which provide spin-photon interface and narrow linewidth optical emission, are getting significant attention as the most promising candidate materials in advancing quantum transduction and memories. Here, from $ab~initio$ calculations, we identify antiferromagnetic ground states in structurally preferred monoclinic CePO$_4$ and tetragonal CeVO$_4$ exhibiting localized occupied and unoccupied Ce $4f$ states with $4f-4f$ transition characteristics. Interestingly, in CePO$_4$, O $2p$ and P $3p$ states hybridize negligibly with Ce $4f$ states, while in CeVO$_4$, V $3d$ and O $2p$ states hybridize and appear as extended states in between the occupied and unoccupied Ce $4f$ states. Here, phonon calculations and analysis identify and differentiate Raman active phonon modes along with the spin phonon coupling of Ce in both CePO$_4$ and CeVO$_4$ that ultimately lead to different $4f$ ground state crystal field multiplets, which are critical to accurately describe electronic transitions for foundational quantum transduction and memories. Further, the identified $C_1$ site symmetry of Ce, lacking inversion symmetry in CePO$_4$, is relevant for quantum memories and $D_{2d}$ site symmetry of Ce exhibiting inversion symmetry in CeVO$_4$ is relevant for quantum transduction.

cond-mat.str-el↗

arXiv2025

Stability, electronic quantum states, and magnetic interactions of Er$^{3+}$ ions in Ga$_2$O$_3$

The chemical, structural, mechanical, and dynamical stabilities of the $\alpha$- and $\beta$-Ga$_2$O$_3$ are confirmed from respective negative formation energies, negative cohesive energies, favorable elastic constants, and positive phonon frequencies. The phonon dispersions indicate that the Ga-O bonds are uniform in the $\alpha$-phase, while they vary in the $\beta$-phase due to the anisotropic polyhedral movement. The defect formation energy analysis confirms that both Er-doped phases prefer Er$^{3+}$ state. The underestimated band gaps of the pristine phases from $ab~initio$ calculations are corrected by employing the hybrid functional calculations. The site preference energy analysis indicates partial occupation of Er in the octahedral site of Ga. Anisotropic nature of hyperfine tensor coefficients of Er are similar in both phases. Calculated magnetic exchange interaction between two Er dopants is negative for $\alpha$ and positive for $\beta$, indicating antiferromagnetic ground state in the former and the ferromagnetic ground state in the latter. A large values of Dzyaloshinskii-Moriya interactions (DMIs) are obtained along the $x$ direction in the $\alpha$ and along the $y$ direction in the $\beta$. The analysis of dielectric constants and refractive indices of both pristine and Er doped phases shows a good agreement with available experimental values. The calculated optical anisotropy is slightly higher in $\beta$ than those in $\alpha$, which is due to the involvement of lower symmetry in $\beta$. The crystal field coefficients (CFCs) calculated from DFT are used to analyze 4$f$ multiplets and 4$f$ - 4$f$ transitions. Thus calculated lowest energy level of the first excited state to the lowest energy level of the ground state is about 1.53~$\mu$m, which is in a good agreement with available experiment and it falls within the quantum telecommunication wavelength range.

cond-mat.mtrl-sci↗

arXiv2025

Ab initio calculations of erbium crystal field splittings in oxide hosts

We present an effective ab initio method to calculate the crystal field coefficients of an erbium (Er3+) ion experiencing different local site symmetries in several wide-band-gap oxides, and then evaluate crystal field splittings of these Er3+ ions for their ground and excited states. The optical transitions between the ground state (Z) and excited state (Y) manifolds of the environmentally shielded 4f states of these Er3+ ions have wavelengths ~1.5 microns and thus have potential applications to quantum communications and quantum memories. These results are in excellent agreement with recent low-temperature measurements, provided the inadequate calculation of the 4f shell screening is adjusted by reducing the radial extent of the 4f wavefunctions by approximately a factor of 2.

cond-mat.mtrl-sci↗

arXiv2025

Ab initio calculations of erbium crystal field splittings in oxide hosts: role of the 4f radial wave function

We expand here our description of a newly developed simple and effective ab initio method of calculating crystal field coefficients (CFCs) of rare-earth atoms in insulating hosts, focusing on Er in wide band gap oxide hosts MgO, ZnO, TiO$_2$, CaWO$_4$, and PbWO$_4$, which exemplify different local site symmetries. These hybrid functional calculations, which incorporate a portion of exact exchange from Hartree-Fock theory, reproduce the experimentally identified insulating band gaps of these oxides. The negative values of cohesive and formation energies confirm the structural and chemical stability of these oxides, whereas the defect formation energies indicate that Er doped ZnO, CaWO$_4$, and PbWO$_4$ are easier to form compared to Er doped MgO and TiO$_2$. Er doped in these oxide hosts exhibits a spin magnetic moment of $\sim$ 3 $\mu_B$ confirming the $3+$ valence state. The CFCs of these hosted Er are determined from charge densities and potentials obtained from non-spin-polarized calculations, involving a 4\textit{f} core approximation. These CFCs are subsequently used to solve an effective Hamiltonian and generate the crystal field splitting of Er 4f. These calculated Er 4f energy levels are in good agreement with available experiments.

cond-mat.mtrl-sci↗