arXiv subjects

Yoichi Ando

Publications and source records attributed to Yoichi Ando.

At least 127 records · Page 7Linked to original sources

arXiv2012

Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid

We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating BiSbTeSe2 system where the chemical potential is located close to both the surface Dirac point and the middle of the bulk band gap. Thanks to the use of ionic liquid, the control of the surface chemical potential by gating was possible on the whole surface of a bulk three-dimensional sample, opening new experimental opportunities for topological insulators. In addition, our data suggest the existence of a nearly reversible electrochemical reaction that causes bulk carrier doping into the crystal during the ionic-liquid gating process.

cond-mat.mes-hall↗

arXiv2012

Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films

The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the three-dimensionality is lost. By measuring the Shubnikov-de Haas oscillations in a series of high-quality Bi2Se3 thin films, we revealed a systematic evolution of the surface conductance as a function of thickness and found a striking manifestation of the topological protection: The metallic surface transport abruptly diminishes below the critical thickness of ~6 nm, at which an energy gap opens in the surface state and the Dirac fermions become massive. At the same time, the weak antilocalization behavior is found to weaken in the gapped phase due to the loss of πBerry phase.

cond-mat.mes-hall↗

arXiv2012

Spin Polarization of Gapped Dirac Surface States Near the Topological Phase Transition in TlBi(S1-xSex)2

We performed systematic spin- and angle-resolved photoemission spectroscopy of TlBi(S1-xSex)2 which undergoes a topological phase transition at x ~ 0.5. In TlBiSe2 (x = 1.0), we revealed a helical spin texture of Dirac-cone surface states with an intrinsic in-plane spin polarization of ~ 0.8. The spin polarization still survives in the gapped surface states at x > 0.5, although it gradually weakens upon approaching x = 0.5 and vanishes in the non-topological phase. No evidence for the out-of-plane spin polarization was found irrespective of x and momentum. The present results unambiguously indicate the topological origin of the gapped Dirac surface states, and also impose a constraint on models to explain the origin of mass acquisition of Dirac fermions.

cond-mat.mes-hall↗

arXiv2012

Coexisting pseudo-gap and superconducting gap in the high-Tc superconductor La2-xSrxCuO4

Relationship between the superconducting gap and the pseudogap has been the subject of controversies. In order to clarify this issue, we have studied the superconducting gap and pseudogap of the high-Tc superconductor La2-xSrxCuO4 (x=0.10, 0.14) by angle-resolved photoemission spectroscopy (ARPES). Through the analysis of the ARPES spectra above and below Tc, we have identified a superconducting coherence peak even in the anti-nodal region on top of the pseudogap of a larger energy scale. The superconducting peak energy nearly follows the pure d-wave form. The d-wave order parameter Δ_0 [defined by Δ(k)=Δ_0(cos(kxa)-cos(kya)) ] for x=0.10 and 0.14 are nearly the same, Δ_0 ~ 12-14 meV, leading to strong coupling 2Δ_0/kB Tc ~ 10. The present result indicates that the pseudogap and the superconducting gap are distinct phenomena and can be described by the "two-gap" scenario.

cond-mat.str-el↗

arXiv2012

Manipulation of Topological States and Bulk Band Gap Using Natural Heterostructures of a Topological Insulator

We have performed angle-resolved photoemission spectroscopy on (PbSe)5(Bi2Se3)3m, which forms a natural multilayer heterostructure consisting of a topological insulator (TI) and an ordinary insulator. For m = 2, we observed a gapped Dirac-cone state within the bulk-band gap, suggesting that the topological interface states are effectively encapsulated by block layers; furthermore, it was found that the quantum confinement effect of the band dispersions of Bi2Se3 layers enhances the effective bulk-band gap to 0.5 eV, the largest ever observed in TIs. In addition, we found that the system is no longer in the topological phase at m = 1, pointing to a topological phase transition between m = 1 and 2. These results demonstrate that utilization of naturally-occurring heterostructures is a new promising strategy for realizing exotic quantum phenomena and device applications of TIs.

cond-mat.mes-hall↗

arXiv2012

Experimental realization of a topological crystalline insulator in SnTe

Topological insulators materialize a topological quantum state of matter where unusual gapless metallic state protected by time-reversal symmetry appears at the edge or surface. Their discovery stimulated the search for new topological states protected by other symmetries, and a recent theory predicted the existence of "topological crystalline insulators" (TCIs) in which the metallic surface states are protected by mirror symmetry of the crystal. However, its experimental verification has not yet been reported. Here we show the first and definitive experimental evidence for the TCI phase in tin telluride (SnTe) which was recently predicted to be a TCI. Our angle-resolved photoemission spectroscopy shows clear signature of a metallic Dirac-cone surface band with its Dirac point slightly away from the edge of the surface Brillouin zone in SnTe. On the other hand, such a gapless surface state is absent in a cousin material lead telluride (PbTe), in line with the theoretical prediction. Our result establishes the presence of a TCI phase, and opens new avenues for exotic topological phenomena.

cond-mat.mes-hall↗

arXiv2012

Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator

The three-dimensional (3D) topological insulator is a novel quantum state of matter where an insulating bulk hosts a linearly-dispersing surface state, which can be viewed as a sea of massless Dirac fermions protected by the time-reversal symmetry (TRS). Breaking the TRS by a magnetic order leads to the opening of a gap in the surface state and consequently the Dirac fermions become massive. It has been proposed theoretically that such a mass acquisition is necessary for realizing novel topological phenomena, but achieving a sufficiently large mass is an experimental challenge. Here we report an unexpected discovery that the surface Dirac fermions in a solid-solution system TlBi(S1-xSex)2 acquires a mass without explicitly breaking the TRS. We found that this system goes through a quantum phase transition from the topological to the non-topological phase, and by tracing the evolution of the electronic states using the angle-resolved photoemission, we observed that the massless Dirac state in TlBiSe2 switches to a massive state before it disappears in the non-topological phase. This result suggests the existence of a condensed-matter version of the "Higgs mechanism" where particles acquire a mass through spontaneous symmetry breaking.

cond-mat.mes-hall↗

arXiv2012

An Investigation of Particle-Hole Asymmetry in the Cuprates via Electronic Raman Scattering

In this paper we examine the effects of electron-hole asymmetry as a consequence of strong correlations on the electronic Raman scattering in the normal state of copper oxide high temperature superconductors. Using determinant quantum Monte Carlo simulations of the single-band Hubbard model, we construct the electronic Raman response from single particle Green's functions and explore the differences in the spectra for electron and hole doping away from half filling. The theoretical results are compared to new and existing Raman scattering experiments on hole-doped La$_{2-x}$Sr$_{x}$CuO$_{4}$ and electron-doped Nd$_{2-x}$Ce$_{x}$CuO$_{4}$. These findings suggest that the Hubbard model with fixed interaction strength qualitatively captures the doping and temperature dependence of the Raman spectra for both electron and hole doped systems, indicating that the Hubbard parameter U does not need to be doping dependent to capture the essence of this asymmetry.

cond-mat.str-el↗

arXiv2012

Fermi level tuning and a large activation gap achieved in the topological insulator Bi_{2}Te_{2}Se by Sn doping

We report the effect of Sn doping on the transport properties of the topological insulator Bi_{2}Te_{2}Se studied in a series of Bi_{2-x}Sn_{x}Te_{2}Se crystals with 0 \leq x \leq 0.02. The undoped stoichiometric compound (x = 0) shows an n-type metallic behavior with its Fermi level pinned to the conduction band. In the doped compound, it is found that Sn acts as an acceptor and leads to a downshift of the Fermi level. For x \geq 0.004, the Fermi level is lowered into the bulk forbidden gap and the crystals present a resistivity considerably larger than 1 Ohmcm at low temperatures. In those crystals, the high-temperature transport properties are essentially governed by thermally-activated carriers whose activation energy is 95-125 meV, which probably signifies the formation of a Sn-related impurity band. In addition, the surface conductance directly obtained from the Shubnikov-de Haas oscillations indicates that a surface-dominated transport can be achieved in samples with several um thickness.

cond-mat.mtrl-sci↗

arXiv2012

Landau level spectroscopy of surface states in the topological insulator Bi$_{0.91}$Sb$_{0.09}$ via magneto-optics

We have performed broad-band zero-field and magneto-infrared spectroscopy of the three dimensional topological insulator Bi$_{0.91}$Sb$_{0.09}$. The zero-field results allow us to measure the value of the direct band gap between the conducting $L_a$ and valence $L_s$ bands. Under applied field in the Faraday geometry (\emph{k} $||$ \emph{H} $||$ C1), we measured the presence of a multitude of Landau level (LL) transitions, all with frequency dependence $ω\propto \sqrt{H}$. We discuss the ramification of this observation for the surface and bulk properties of topological insulators.

cond-mat.mes-hall↗

arXiv2011

Direct Observation of the Topological Surface States in Lead-Based Ternary Telluride Pb(Bi1-xSbx)2Te4

We have performed angle-resolved photoemission spectroscopy on Pb(Bi1-xSbx)2Te4, which is a member of lead-based ternary tellurides and has been theoretically proposed as a candidate for a new class of three-dimensional topological insulators (TIs). In PbBi2Te4, we found a topological surface state with a hexagonally deformed Dirac-cone band dispersion, indicating that this material is a strong TI with a single topological surface state at the Brillouin-zone center. Partial replacement of Bi with Sb causes a marked change in the Dirac carrier concentration, leading to the sign change of Dirac carriers from n-type to p-type. The Pb(Bi1-xSbx)2Te4 system with tunable Dirac carriers thus provides a new platform for investigating exotic topological phenomena.

cond-mat.mes-hall↗

arXiv2011

An extended infrared study of the (p,T) phase diagram of the p-doped Cu-O plane

The ab-plane optical conductivity of eleven single crystals, belonging to the families Sr2-xCuO2Cl2, Y1-xCaxBa2Cu3O6, Bi2Sr2-xLaxCuO6, and Bi2Sr2CaCu2O8 has been measured with hole concentrations p between 0 and 0.18, and for 6 K < T < 500 K to obtain an infrared picture of the p,T phase diagram of the Cu-O plane. At extreme dilution (p = 0.005), a narrow peak is observed at 1570 cm-1 (195 meV), that we assign to a single-hole bound state. For increasing doping, that peak broadens into a far-infrared (FIR) band whose low-energy edge sets the insulating gap. The insulator-to-metal transition (IMT) occurs when the softening of the FIR band closes the gap thus evolving into a Drude term. In the metallic phase, a multi-band analysis identifies a mid-infrared band which weakly depends on temperature and softens for increasing p, while the extended-Drude analysis leads to an optical scattering rate larger than the frequency, as found in other cuprates. The infrared spectral weight W(T) is consistent with a Fermi liquid renormalized by strong correlations, provided that the T^4 term of the Sommerfeld expansion is included above 300 K. In the superconducting phase, the optical response of single-layer Bi2Sr2-xLaxCuO6 at optimum doping is similar to that of the corresponding optimally-doped bilayer Bi2Sr2CaCu2O8.

cond-mat.supr-con↗

arXiv2011

Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime

To optimize the bulk-insulating behavior in the topological insulator materials having the tetradymite structure, we have synthesized and characterized single-crystal samples of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) (BSTS) solid solution at various compositions. We have elucidated that there are a series of "intrinsic" compositions where the acceptors and donors compensate each other and present a maximally bulk-insulating behavior. At such compositions, the resistivity can become as large as several Ohmcm at low temperature and one can infer the role of the surface-transport channel in the non-linear Hall effect. In particular, the composition of Bi1.5Sb0.5Te1.7Se1.3 achieves the lowest bulk carrier density and appears to be best suited for surface transport studies.

cond-mat.mtrl-sci↗

arXiv2011

Topological Superconductivity in CuxBi2Se3

A topological superconductor (TSC) is characterized by the topologically-protected gapless surface state that is essentially an Andreev bound state consisting of Majorana fermions. While a TSC has not yet been discovered, the doped topological insulator CuxBi2Se3, which superconducts below ~3 K, has been predicted to possess a topological superconducting state. We report that the point-contact spectra on the cleaved surface of superconducting CuxBi2Se3 present a zero-bias conductance peak (ZBCP) which signifies unconventional superconductivity. Theoretical considerations of all possible superconducting states help us conclude that this ZBCP is due to Majorana Fermions and gives evidence for a topological superconductivity in CuxBi2Se3. In addition, we found an unusual pseudogap that develops below ~20 K and coexists with the topological superconducting state.

cond-mat.supr-con↗

arXiv2011

Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition where a high level of compensation is achieved, the resistivity exceeds 0.5 Ohmcm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.

cond-mat.mtrl-sci↗

arXiv2011

Electrochemical synthesis and superconducting phase diagram of Cu_xBi2Se3

The superconducting Cu_xBi_2Se_3 is an electron-doped topological insulator and is a prime candidate of the topological superconductor which still awaits discovery. The electrochemical intercalation technique for synthesizing Cu_xBi2Se3 offers good control of restricting Cu into the van-der-Waals gap and yields samples with shielding fractions of up to ~50%. We report essential details of this synthesis technique and present the established superconducting phase diagram of T_c vs x, along with a diagram of the shielding fraction vs x. Intriguingly, those diagrams suggest that there is a tendency to spontaneously form small islands of optimum superconductor in this material.

cond-mat.supr-con↗

arXiv2011

Berry phase of non-ideal Dirac fermions in topological insulators

A distinguishing feature of Dirac fermions is the Berry phase of $π$ associated with their cyclotron motions. Since this Berry phase can be experimentally assessed by analyzing the Landau-level fan diagram of the Shubnikov-de Haas (SdH) oscillations, such an analysis is widely employed in recent transport studies of topological insulators to elucidate the Dirac nature of the surface states. However, the reported results have usually been unconvincing. Here we show a general scheme for describing the phase factor of the SdH oscillations in realistic surface states of topological insulators, and demonstrate how one could elucidate the Dirac nature in the real experimental data.

cond-mat.mtrl-sci↗

arXiv2011

Observation of Dirac Holes and Electrons in a Topological Insulator

We show that in the new topological-insulator compound Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3} one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that in this material the transport properties sharply reflect the time dependence of the surface chemical potential, presenting a sign change in the Hall coefficient with time. We demonstrate that such an evolution makes us observe both Dirac holes and electrons on the surface, which allows us to reconstruct the surface band dispersion across the Dirac point.

cond-mat.mtrl-sci↗