arXiv subjects

Yoji Kunihashi

Publications and source records attributed to Yoji Kunihashi.

7 recordsLinked to original sources

arXiv2026

Molecular beam epitaxy synthesis of ternary nitride PrTaN$_2$ and its crystal structure determination

We report the discovery of a novel ternary nitride PrTaN$_2$ synthesized as a thin film using molecular beam epitaxy. The combination of e-beam evaporation for refractory elements and a radio-frequency nitrogen radical source enables growth under a highly nitriding environment, providing access to phases not readily obtained in bulk synthesis. Structural characterization by X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy reveals that the compound crystallizes in an orthorhombic structure and grows with a well-defined orientation on YAlO$_3$ substrates, while remaining essentially strain-free. To determine the crystal structure from limited thin-film diffraction data, we developed a fitting procedure based on structure factors. By combining extinction rules with constraints from Wyckoff positions, the number of fitting parameters is significantly reduced, enabling reliable structure determination. Systematic exclusion of alternative candidate phases in the Pr-Ta-N system, together with structure factor fitting, identifies the space group as $P222$ and determines the atomic coordinates. The present results demonstrate that thin-film growth with molecular beam epitaxy can stabilize previously unexplored ternary nitrides, and establish a practical approach for structural determination in such systems. This work provides a pathway for the exploration of new complex nitride materials.

cond-mat.mtrl-sci↗

arXiv2026

Uniform Narrow Excitonic Spectrum in Large-Area Suspended WSe2 Monolayers

Uniformity in the excitonic spectrum is a key requirement for accessing intrinsic excitonic physics in two-dimensional semiconductors; however, in transition-metal dichalcogenide (TMD) monolayers supported on substrates, exciton energies and linewidths can vary spatially due to inhomogeneities from contact with other materials or fabrication residues. Suspended TMD monolayers provide a route to minimizing substrate-induced disorder, although conventional transfer processes can introduce contamination. Here we demonstrate the spatially uniform excitonic spectrum from optically high-quality WSe2 suspended monolayers fabricated by gold-assisted exfoliation directly onto an Au contact electrode of a gate-tunable device. The resulting membranes span narrow suspended regions up to ~80 um and show spatially uniform photoluminescence at cryogenic temperatures with neutral-exciton linewidths as low as ~4.5 meV. Spectral reproducibility supports an intrinsic optical response, while gate-dependent measurements resolve multiple excitonic species. This approach provides a route to electrically tunable potential landscapes in suspended TMD monolayers with a highly uniform excitonic response.

cond-mat.mes-hall↗

arXiv2024

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

We investigate the excitonic species in WS$_{2}$ monolayers transferred onto III-V semiconductor substrates with different surface treatments. When the III-V substrates were covered with amorphous native oxides, negatively charged excitons dominate the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III-V substrates were reduced, neutral excitons begin to dominate the spectral weight, indicating a reduction in the electron density in the WS$_{2}$ monolayers. The removal of the native oxides enhanced the electron transfer from the WS$_{2}$ monolayer to the III-V substrate. In addition, an additional shoulder-like PL feature appeared $\sim$50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III-V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through the substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, to implement deterministic carrier localization or delocalization for the 2D materials, and to facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.

cond-mat.mtrl-sci↗

arXiv2023

1-MHz operation of 1.7-cycle multiple plate compression at 35-W average output power

We generated 1.7-cycle and 35-$μ$J pulses at a 1-MHz repetition rate by using two-stage multiple plate continuum compression of Yb-laser pulses with 80-W average input power. By adjusting the plate positions with careful consideration of the thermal lensing effect due to the high average power, we compressed the output pulse with a 184-fs initial duration to 5.7 fs by using only group-delay-dispersion compensation. This pulse achieved a sufficient beam quality ($M^2$ < 1.5) reaching a focused intensity over 10$^{14}$ W/cm$^2$ and a high spatial-spectral homogeneity (98%). Our study holds promise for a MHz-isolated-attosecond-pulse source for advanced attosecond spectroscopic and imaging technologies with unprecedentedly high signal-to-noise ratios.

physics.optics↗

arXiv2021

Flying electron spin control gates

The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the necessary perturbation for their control either globally or at well-defined locations. Here, we demonstrate the dynamic control of moving electron spins via contactless gates that move together with the spin. The concept is realized using electron spins trapped and transported by moving potential dots defined by a surface acoustic wave (SAW). The SAW strain at the electron trapping site, which is set by the SAW amplitude, acts as a contactless, tunable gate that controls the precession frequency of the flying spins via the spin-orbit interaction. We show that the degree of precession control in moving dots exceeds previously reported results for unconstrained transport by an order of magnitude and is well accounted for by a theoretical model for the strain contribution to the spin-orbit interaction. This flying spin gate permits the realization of an acoustically driven optical polarization modulator based on electron spin transport, a key element for on-chip spin information processing with a photonic interface.

cond-mat.mes-hall↗

arXiv2019

Sidewall quantum wires on GaAs(001) substrates

We study the structural, optical, and transport properties of sidewall quantum wires on GaAs(001) substrates. The QWRs are grown by molecular beam epitaxy (MBE) on GaAs(001) substrates prepatterned with shallow ridges. They form as a consequence of material accumulation on the sidewalls of the ridges during the overgrowth of a quantum well (QW) on the patterned surface. The QWRs are approximately 200 nm-wide and have emission energies red-shifted by 27meV with respect to the surrounding QW. Spatially resolved spectroscopic photoluminencence studies indicate that the QW thickness reduces around the QWRs, thus creating a 4 meV energy barrier for the transfer of carriers from the QW to the QWR. We show that the QWRs act as efficient channels for the transport of optically excited electrons and holes over tens of μm by a high-frequency surface acoustic wave (SAW). These results demonstrate the feasibility of efficient ambipolar transport in QWRs with sub-micrometer dimensions, photolithographically defined on GaAs substrates.

cond-mat.mes-hall↗

arXiv2009

All-electrical detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction in quantum wires

We propose a method to determine the relative strength of Rashba and Dresselhaus spin-orbit interaction from transport measurements without the need of fitting parameters. To this end, we make use of the conductance anisotropy in narrow quantum wires with respect to the directions of an in-plane magnetic field, the quantum wire and the crystal orientation. We support our proposal by numerical calculations of the conductance of quantum wires based on the Landauer formalism which show the applicability of the method to a wide range of parameters.

cond-mat.mes-hall↗