arXiv subjects

Yong Guo

Publications and source records attributed to Yong Guo.

96 records · Page 6Linked to original sources

arXiv2013

Generation of a fully valley-polarized current in bulk graphene

The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic superlattice. It is found that this device allows a coexistence of insulating transmission gap of one valley and metallic resonant band of the other. Accordingly, a substantial bulk FVPC appears in a wide range of edge orientation and temperature, which can be effectively tuned by structural parameters. A valley-resolved Hall configuration is designed to measure the valley polarization degree of the filtered current.

cond-mat.mes-hall↗

arXiv2013

Negative differential resistances with back gate-controlled lowest operation windows in graphene double barrier resonant tunneling diodes

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that, the NDR feature only presents with appropriate structural parameters for the massless case and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.

cond-mat.mes-hall↗

arXiv2012

Giant Goos-Hänchen Shift in Graphene Double-barrier Structures

We report giant Goos-Hänchen shifts [Goos and Hänchen, Ann. Phys. 436, 333 (1947)] for electron beams tunneling through graphene double barrier structures. We find that inside the transmission gap for the single barrier, the shift displays sharp peaks with magnitudes up to the order of electron beam width and rather small full-widths-at-half-maximum, which may be utilized to design valley and spin beam splitters with wide tunability and high energy resolution. We attribute the giant shifts to quasibound states in the structures. Moreover, an induced energy gap in the dispersion can increase the tunability and resolution of the splitters.

cond-mat.mes-hall↗

arXiv2012

Two-dimensional group delay in graphene probed by spin precession measurements

We take graphene as an example to demonstrate that the present widely adopted expression is only the scattering component of a true 2D group delay in the condensed matter context, in which the spatial Goos-Hänchen (GH) shift along an interface contributes an intrinsic component. We relate the dwell time to spin precession and derive a relation between the 2D group delay and dwell time, whereby we for the first time reveal that, the group delay for 2D ballistic electronic systems can be directly observed by measuring a conductance difference in a weak-field spin precession experiment. This physical observable not only implies the group delay being a relevant quantity even in the condensed matter context, but also provides an experimental evidence for the intrinsic effect of the GH shift. Finally, we revisit the 2D Hartman effect, a central issue of the group delay, by analytically solving it via the vested relation and calculating the proposed observable at the Dirac point.

cond-mat.mes-hall↗

arXiv2009

Enhanced spin injection efficiency in a four-terminal double quantum dot system

Within the scheme of quantum rate equations, we investigate the spin-resolved transport through a double quantum dot system with four ferromagnetic terminals. It is found that the injection efficiency of spin-polarized electrons can be significantly improved compared with single dot case. When the magnetization in one of four ferromagnetic terminals is antiparallel with the other three, the polarization rate of the current through one dot can be greatly enhanced, accompanied by the drastic decrease of the current polarization rate through the other one. The mechanism is the exchange interaction between electrons in the two quantum dots, which can be a promising candidate for the improvement of the spin injection efficiency.

cond-mat.mes-hall↗

arXiv2007

Comment on "Berry Phase in a Composite System"

We show in this comment that the results obtained in a recent work by Yi et al. [Phys. Rev. Lett. 92, 150406 (2004)] are quantitatively not correct and the proposed subsystem Berry phase is not well-defined.

quant-ph↗