arXiv subjects

Yong P. Chen

Publications and source records attributed to Yong P. Chen.

At least 19 recordsLinked to original sources

arXiv2026

High-pressure phase transitions in the quantum spin liquid candidate Na2Co2TeO6 probed by Raman spectroscopy

The quasi-2D magnet Na2Co2TeO6 (NCTO) is a candidate for a Kitaev Quantum Spin Liquid (KQSL) state. Pressure-tuning in such materials is of interest as a potential method to tune the Kitaev exchange interactions, which are strongly dependent on bond geometry. Here we report a Raman spectroscopic study of NCTO inside a diamond anvil cell (DAC) with pressure applied up to 16.3 GPa. Based on the changes in the Raman modes, this pressure range is divided into three regions. The appearance and disappearance of several modes and changes in the polarization dependence of the representative modes, most prominently above 13.8 GPa, point to pressure-induced phase transitions in this material.

cond-mat.str-el↗

arXiv2026

Noncollinear spin textures and 90° domain walls in twisted XY magnets

Twisted moiré magnets are promising in exploring noncollinear magnetic phases, yet current experimental studies have been restricted to uniaxial magnets, limiting the accessible phase space. Here, we demonstrate noncollinear moiré magnetism based on XY magnet CrCl3. The tunneling magnetoconductance of twisted CrCl3 exhibits multiple field-driven transitions in small-twist-angle devices, attributed to the coexisting antiferromagnetic and ferromagnetic domains with distinct susceptibilities. The inferred spin configuration depends on the layer number, reflecting the interlayer coupling strength between twisted layers. This moiré magnetism is remarkably robust, persisting up to twisted double nine-layer stacks. Combined with micromagnetic simulations, we identify the ground state as the predicted "twisted-s" phase featuring 90° domain walls. Finally, we demonstrate voltage control of these noncollinear phases, highlighting the electrically tunable twist-spintronics.

cond-mat.mes-hall↗

arXiv2026

Complex electronic topography and magnetotransport in an in-plane ferromagnetic kagome metal

The intricate interplay between flat bands, Dirac cones, and magnetism in kagome materials has recently attracted significant attention from materials scientists, particularly in compounds belonging to the RMn6Sn6 family (R = Sc, Y, rare earths), due to their inherent magnetic frustration. Here, we present a detailed investigation of the ferromagnetic (FM) kagome magnet ScMn6(Sn0.78Ga0.22)6 using angle-resolved photoemission spectroscopy (ARPES), magnetotransport measurements, and density functional theory (DFT) calculations. Our findings reveal a paramagnetic-to-FM transition at 375 K, with the in-plane direction serving as the easy magnetization axis. Notably, ARPES measurements reveal a Dirac cone near the Fermi energy, while the Hall resistivity exhibits a substantial contribution from the anomalous Hall effect. Additionally, we observe a flat band spanning a substantial portion of the Brillouin zone, arising from the destructive interference of wave functions in the Mn kagome lattice. Theoretical calculations reveal that the gap in the Dirac cone can be modulated by altering the orientation of the magnetic moment. An out-of-plane orientation produces a gap of approximately 15 meV, while an in-plane alignment leads to a gapless state, as corroborated by ARPES measurements. This comprehensive analysis provides valuable insights into the electronic structure of magnetic kagome materials and paves the way for exploring novel topological phases in this material class.

cond-mat.mtrl-sci↗

arXiv2026

Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions

Atomic-scale control over band alignment in single-layer lateral heterostructures (LHSs) of dissimilar transition metal dichalcogenides (TMDCs) is critical for nextgeneration electronic, optoelectronic, and quantum technologies. However, direct experimental access to interfacial electronic states with nanometer precision remains a significant challenge. Here, we employ angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) to directly map the epitaxial alignment and valence band evolution across MoSe2-WSe2 LHSs. By combining nanoARPES with spatially resolved photoluminescence, we correlate the evolution of the valence band maximum and exciton features across both atomically sharp and compositionally graded diffusive interfaces. We identified type-II band alignments governed by both material composition and interstitial-induced modifications of band offsets, in close agreement with density functional theory calculations. These results reveal fundamental mechanisms of electronic structure modulation at 1D TMDC heterointerfaces and provide a robust platform for tailored band engineering in van der Waals materials.

cond-mat.mes-hall↗

arXiv2026

Landau Zener Interaction Enhanced Quantum Sensing in Spin Defects of Hexagonal Boron Nitride

Negatively charged boron vacancies (V$_{\text{B}}^{-}$) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split spin transitions of the ensemble pose challenges for quantum sensing with conventional resonant excitation due to limited spectral coverage. While isotopically enriched hBN using $^{10}$B and $^{15}$N isotopes (h$^{10}$B$^{15}$N) exhibits sharper spectral features, significant inhomogeneous broadening persists. We demonstrate that, implemented via frequency modulation on an FPGA, a frequency-ramped microwave pulse achieves around 4-fold greater $|0\rangle\rightarrow|-1\rangle$ spin-state population transfer and thus contrast than resonant microwave excitation and thus 16-fold shorter measurement time for spin relaxation based quantum sensing. Quantum dynamics simulations reveal that an effective two-state Landau-Zener model captures the complex relationship between population inversion and pulse length with relaxations incorporated. Our approach is robust and valuable for quantum relaxometry with spin defects in hBN in noisy environments.

quant-ph↗

arXiv2025

Lessons from $α$-RuCl3 for pursuing quantum spin liquid physics in atomically thin materials

Quantum spin liquids can arise from Kitaev magnetic interactions, and exhibit fractionalized excitations with the potential for a topological form of quantum computation. This review surveys recent experimental and theoretical progress on the pursuit of phenomena related to Kitaev magnetism in layered and exfoliatable materials, which offer numerous opportunities to apply powerful techniques from the field of atomically thin materials. We primarily focus on the antiferromagnetic Mott insulator $α$-RuCl3, which exhibits Kitaev couplings and is readily exfoliated to single- or few-layer sheets, and thus serves as a test bed for developing probes of Kitaev phenomena in atomically thin materials and devices. We introduce the Kitaev model and how it is realized in $α$-RuCl3 and other material candidates; and cover $α$-RuCl3 synthesis and fabrication into van der Waals heterostructure devices. A key discovery is a work-function-mediated charge transfer that heavily dopes both the $α$-RuCl3 and proximate materials, and can enhance Kitaev interactions by up to 50%. We further discuss a wide range of recent results in electronic transport and optical and tunneling spectroscopies of $α$-RuCl3 devices. The experimental techniques and theoretical insights developed for $α$-RuCl3 establish a framework for discovering and engineering superior two-dimensional Kitaev materials that may ultimately realize elusive quantum spin liquid phases.

cond-mat.str-el↗

arXiv2025

Intrinsic physical properties of flexible van der Waals semiconductor InSe

InSe is a van der Waals semiconductor in which mechanical flexibility, high electronic mobility, and non-trivial electronic structures converge, making it an attractive platform for both intriguing fundamental studies and promising device developments. However, the nucleation and growth of phase-pure, intrinsic InSe crystals require stringent thermodynamical conditions, and have therefore remained elusive. Since InSe melts incongruently, the widely used synthesis methods based on cooling of a 1:1 In-Se mixture will produce either aggregates of multiphase crystallites or uncontrolled In-rich, heavily electron-doped InSe. This fundamental thermodynamic constraint provides a compelling explanation for the large discrepancies observed in the reported physical properties of InSe. We overcome these limitations by utilizing the traveling solvent floating zone (TSFZ) method to produce high quality, centimeter-size InSe single crystals. Electrical, thermal, and thermoelectric transport measurements demonstrate that TSFZ-InSe single crystals closely approach the intrinsic limit, establishing it as a benchmark material for the future studies of this important material.

cond-mat.mtrl-sci↗

arXiv2025

Sub-Terahertz Spin Relaxation Dynamics of Boron-Vacancy Centers in Hexagonal Boron Nitride

Quantum sensors based on spin-defect relaxation have become powerful tools for detecting faint magnetic signals, yet their operation has remained largely confined to low magnetic fields and gigahertz frequencies. Extending such sensors into high-field ($> 0.3$ T) and sub-terahertz regimes would enable quantum metrology across a wide range of electromagnetic phenomena and scientific applications, but has proven challenging. Here, we demonstrate that negatively charged boron vacancies ($\mathrm{V_B^-}$) in two-dimensional hexagonal boron nitride can function as relaxation-based quantum sensors operating up to 0.2 terahertz. Their uniform spin-orientation and persistent spin-contrast at high fields enable direct measurement of intrinsic spin relaxation across previously unexplored temperature and frequency regimes. We also reveal a crossover in relaxation behavior \textemdash initially decreasing at low fields before rising at higher fields \textemdash consistent with the emergence of single-phonon-induced resonant noise that becomes significant at sub-terahertz frequencies. These results establish $\mathrm{V_B^-}$ centers as a versatile platform for quantum sensing in the sub-terahertz, high-field regime.

quant-ph↗

arXiv2025

Topology-Optimized Dielectric Cavities for Enhanced Excitonic Light Emission from $\rm WSe_{2}$

Photonic inverse design and, especially, topology optimization, enable dielectric cavities with deeply sub-diffraction mode volumes and high quality factors, thus offering a powerful platform for enhanced light-matter coupling. Here, we design and fabricate arrays of CMOS-compatible silicon cavities on sapphire with extreme subwavelength transverse mode sizes of only 30-40 nm ($\rm V\simλ^3/2500$). These cavities are engineered for deterministic coupling to a monolayer (or few-layer) excitonic material, producing strong near-field localization directly beneath the 2D material. Photoluminescence (PL) measurements show reproducible tenfold enhancements relative to bare silicon, consistent with numerical simulations that account for material absorption and fabrication tolerances. Furthermore, time-resolved PL measurements reveal pronounced lifetime shortening and non-exponential dynamics, indicating cavity-mediated exciton-exciton interactions. The optimized cavity geometry enhances the far-field collection efficiency and supports scalable integration with van der Waals semiconductors. Our results show that the arrays of topology-optimized dielectric cavities are a versatile, scalable platform for controlling excitonic emission and interactions, which creates new opportunities in nonlinear optics, optoelectronics, and quantum photonics.

physics.optics↗

arXiv2025

Resonantly enhanced photoemission from topological surface states in MnBi$_6$Te$_{10}$

The dispersion of topological surface bands in MnBi$_2$Te$_4$-based magnetic topological insulator heterostructures is strongly affected by band hybridization and is spatially inhomogeneous due to varying surface layer terminations on microscopic length scales. Here, we apply micro-focused angle-resolved photoemission spectroscopy with tunable photon energy from 18 to 30 eV to distinguish bulk valence and conduction bands from surface bands on the three surface terminations of MnBi$_6$Te$_10$. We observe a strong enhancement of photoemission intensity from the topological surface bands at the Bi O4 absorption edge, which is exploited to visualize a gapless Dirac cone on the MnBi$_2$Te$_4$-terminated surface and varying degrees of hybridization effects in the surface bands on the two distinct Bi$_2$Te$_3$-terminated surfaces.

cond-mat.mtrl-sci↗

arXiv2025

Quasiparticle gap renormalization driven by internal and external screening in a WS$_2$ device

The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and to gate-controlled doping. Here, we employ micro-focused angle resolved photoemission spectroscopy to separate band gap renormalization effects stemming from environmental screening and electron-doping during \textit{in situ} gating of a single-layer WS$_{2}$ device. The WS$_{2}$ is supported on hBN and contains a section that is exposed to vacuum and another section that is encapsulated by a graphene contact. We directly observe the doping-induced semiconductor-metal transition and band gap renormalization in the two sections of WS$_2$. Surprisingly, a larger band gap renormalization is observed in the vacuum-exposed section than in the graphene-encapsulated - and thus ostensibly better screened - section of the WS$_2$. Using $GW$ calculations, we determine that intrinsic screening due to stronger doping in vacuum exposed WS$_2$ exceeds the external environmental screening in graphene-encapsulated WS$_2$.

cond-mat.mes-hall↗

arXiv2025

Towards a hybrid 3D transmon qubit with topological insulator-based Josephson junctions

Superconducting quantum circuits provide a versatile platform for studying quantum materials by leveraging precise microwave control and utilizing the tools of circuit quantum electrodynamics (QED). Hybrid circuit devices incorporating novel quantum materials could also lead to new qubit functionalities, such as gate tunability and noise resilience. Here, we report experimental progress towards a transmon-like qubit made with a superconductor-topological insulator-superconductor (S-TI-S) Josephson junction using exfoliated BiSbTeSe2. We present a design that enables us to systematically characterize the hybrid device, from DC transport of the S-TI-S junction, to RF spectroscopy, to full circuit QED control and measurement of the hybrid qubit. In addition, we utilize a high-quality-factor superconducting cavity to characterize material and fabrication-induced losses, thereby guiding our efforts to improve device quality.

cond-mat.mes-hall↗

arXiv2025

Enhanced two-dimensional ferromagnetism in van der Waals $β$-UTe$_3$ monolayers

The discovery of local-moment magnetism in van der Waals (vdW) semiconductors down to the single-layer limit has led to a paradigm shift in the understanding of two-dimensional (2D) magnets and unleashed their potential for applications in microelectronic and optoelectronic devices. The incorporation of strong electronic and magnetic correlations in 2D vdW metals remains a sought-after platform not only to enable control of emergent quantum phases, such as superconductivity, but also to achieve more theoretically tractable microscopic models of complex materials. To date, however, there is limited success in the discovery of such metallic vdW platforms, and $f$-electron monolayers remain out of reach. Here we demonstrate that the actinide $β$-UTe$_3$ can be exfoliated to the monolayer limit. A sizable electronic specific heat coefficient provides the hallmark of strong correlations. Remarkably, $β$-UTe$_3$ remains ferromagnetic in the half-unit-cell limit with an enhanced ordering temperature of 35 K, a factor of two larger than its bulk counterpart. Our work establishes $β$-UTe$_3$ as a novel materials platform for investigating and modeling correlated behavior in the monolayer limit and opens numerous avenues for quantum control with, e.g., strain engineering.

cond-mat.str-el↗

arXiv2025

Frustrated vacancy ordering creates novel quantum properties in Kutinaite, $\mathrm{Ag}_{6}\mathrm{Cu}_{14.4}\mathrm{As}_7$

Ideal crystals are fully ordered, but real-world crystals always contain defects breaking translational symmetry. Random defects in crystals have important implications and they e.g. provide the foundation for semiconductor-based electronic devices. Structurally correlated defects introduce an additional level of complexity, which may lead to novel materials properties, but rationalization of relations between correlated disorder and the emergent material properties are very rare. Here we report that the defect structure of the mineral Kutinaite, Ag6Cu14.4As7, exhibits unprecedented metallic diamagnetism, a hallmark of non-trivial electronic states that require delicate symmetrical protection. Using a combination of X-ray scattering methodologies, simulations, and physical property measurements, we deduced and verified subtle frustrated vacancy ordering of the Cu sublattice when cooling crystals below ~300 K. The vacancy frustration in Kutinaite leads to unique quantum properties, and our study calls for a reconsideration of the role of vacancies as quasi-chemical species in crystals.

cond-mat.dis-nn↗

arXiv2025

Discovery of a Highly Anisotropic Type-II Ferromagnetic Weyl State Exhibiting a 3D Quantum Hall Effect

Topological semimetals, particularly Weyl semimetals (WSMs), are crucial platforms for exploring emergent quantum phenomena due to their unique electronic structures and potential to transition into various topological phases. In this study, we report the discovery of a ferromagnetic (FM) type-II WSM in Mn(Bi1-xSbx)4Te7, which exhibits a remarkable three-dimensional (3D) quantum Hall effect (QHE). By precisely tuning the chemical potential through Sb doping, we obtained samples with the Fermi level near the charge neutrality point for x = ~ 0.27. This was confirmed by spectroscopy measurements (ARPES and STS), and these samples showed strong quantum oscillations along with a key transport signature of a Weyl state - chiral anomaly, and Fermi surface reconstruction driven by FM ordering. Our theoretical analysis indicates that this Weyl state evolves from a parent nodal ring state, where higher-order k-terms split the nodal line into type-II Weyl nodes. The Weyl state exhibits significant anisotropy, characterized by a pronounced reduction in Fermi velocity along the kz-axis, likely accounting for the observed 3D QHE. These results not only highlight the exceptional tunability of the Mn(Bi1-xSbx)4Te7 system, where precise control of the chemical potential and magnetic properties opens access to novel quantum phases, but also advance the understanding of FM WSMs.

cond-mat.mtrl-sci↗

arXiv2024

Spontaneously formed phonon frequency combs in van der Waals solid CrXTe$_3$ (X=Ge,Si)

Optical phonon engineering through nonlinear effects has been utilized in ultrafast control of material properties. However, nonlinear optical phonons typically exhibit rapid decay due to strong mode-mode couplings, limiting their effectiveness in temperature or frequency sensitive applications. In this study, we report the observation of long-lived nonlinear optical phonons through the spontaneous formation of phonon frequency combs in the van der Waals material CrXTe$_3$ (X=Ge, Si) using high-resolution Raman scattering. Unlike conventional optical phonons, the highest $A_g$ mode in CrGeTe$_3$ splits into equidistant, sharp peaks forming a frequency comb that persists for hundreds of oscillations and survives up to 100K before decaying. These modes correspond to localized oscillations of Ge$_2$Te$_6$ clusters, isolated from Cr hexagons, behaving as independent quantum oscillators. Introducing a cubic nonlinear term to the harmonic oscillator model, we simulate the phonon time evolution and successfully replicate the observed comb structure. Similar frequency comb behavior is observed in CrSiTe$_3$, demonstrating the generalizability of this phenomenon. Our findings reveal that Raman scattering effectively probes high-frequency nonlinear phonon modes, providing new insight into generating long-lived, tunable phonon frequency combs with applications in ultrafast material control and phonon-based technologies.

cond-mat.mes-hall↗

arXiv2024

Van der Waals engineering of ultrafast carrier dynamics in magnetic heterostructures

Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface electronic band structures depending on the stacking order and exposed termination. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy, and disentangle surface from bulk dynamics based on density functional theory slab calculations of the surface-projected electronic structure. We gain access to the out-of-equilibrium charge carrier populations of both MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ surface terminations of MnBi$_4$Te$_7$, revealing an instantaneous occupation of states associated with the Bi$_2$Te$_3$ surface layer followed by carrier extraction into the adjacent MnBi$_2$Te$_4$ layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by phonon scattering with significantly slower relaxation times in the magnetic MnBi$_2$Te$_4$ septuple layers. The observed competition between interlayer charge transfer and intralayer phonon scattering demonstrates a method to control ultrafast charge transfer processes in MnBi$_2$Te$_4$-based van der Waals compounds.

cond-mat.mtrl-sci↗

arXiv2024

Direct view of gate-tunable miniband dispersion in graphene superlattices near the magic twist angle

Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena are ascribed to a combination of flat bands and strong Coulomb interactions. However, a comprehensive understanding is lacking because the low-energy band structure strongly changes when the electron filling is varied. Here, we gain direct access to the filling-dependent low energy bands of twisted bilayer graphene (TBG) and twisted double bilayer graphene (TDBG) by applying micro-focused angle-resolved photoemission spectroscopy to in situ gated devices. Our findings for the two systems are in stark contrast: The doping dependent dispersion for TBG can be described in a simple model, combining a filling-dependent rigid band shift with a many-body related bandwidth change. In TDBG, on the other hand, we find a complex behaviour of the low-energy bands, combining non-monotonous bandwidth changes and tuneable gap openings. Our work establishes the extent of electric field tunability of the low energy electronic states in twisted graphene superlattices and can serve to underpin the theoretical understanding of the resulting phenomena.

cond-mat.mes-hall↗