arXiv subjects

Yong-Qiang Xu

Publications and source records attributed to Yong-Qiang Xu.

4 recordsLinked to original sources

arXiv2026

On-chip Parametric Amplification in a Double Quantum Dots Circuit

In microwave-based quantum circuits, including double quantum dots (DQDs), superconducting qubits and spin qubits, parametric amplifiers are indispensable in achieving high-fidelity qubit readouts. Despite its importance, the application of parametric amplifiers is hampered by several challenges, such as high insertion losses, constrained tunability, and a pronounced vulnerability to magnetic fields. Here, we demonstrate an on-site single-atom parametric amplifier (SAPA) within a reconfigurable quantum circuit, which consists of a superconducting microwave cavity and two GaAs gate-defined DQDs. Leveraging the inherent nonlinearity of the DQD, a parametric gain exceeding 11 dB is achieved. This gain contributes to enhance the qubit readout, as evidenced by exceeding two times improvement in the signal-to-noise ratio (SNR) when employing the DQD-based amplifier for reading out another DQD. Our work not only presents a versatile experimental platform with enhanced readout capabilities in quantum computing, but also introduces alternative choices of parametric amplifiers for a variety of microwave-based quantum circuits.

quant-ph↗

arXiv2026

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

cond-mat.mes-hall↗

arXiv2024

Revealing spin-flip two-level systems using ultra-thin film superconducting resonators

Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their spins in tunneling and its impact on device performance remain highly unexplored. In this work, employing ultra-thin TiN superconducting resonators, we reveal anomalous TLS behaviors by demonstrating an unexpected increase in resonant frequency at low magnetic fields. Furthermore, a spin-flip TLS model is proposed, in which an effective spin-orbit coupling is generated by inhomogeneous local magnetic fields from defect spins. This mechanism mixes charge tunnelings and spin flips, quantitatively reproducing the observed frequency-field relationship and its temperature dependence. This work deepens the understanding of spin-dependent TLS behaviors, offering the possibility of magnetically engineering noise and loss in solid-state quantum devices.

cond-mat.mes-hall↗

arXiv2022

Probing two driven double quantum dots strongly coupled to a cavity

We experimentally and theoretically study a driven hybrid circuit quantum electrodynamics (cQED) system beyond the dispersive coupling regime. Treating the cavity as part of the driven system, we develop a theory applicable to such strongly coupled and to multi-qubit systems. The fringes measured for a single driven double quantum dot (DQD)-cavity setting and the enlarged splittings of the hybrid Floquet states in the presence of a second DQD are well reproduced with our model. This opens a path to study Floquet states of multi-qubit systems with arbitrarily strong coupling and reveals a new perspective for understanding strongly driven hybrid systems.

cond-mat.mes-hall↗