arXiv subjects

Yongbin Lee

Publications and source records attributed to Yongbin Lee.

28 records · Page 2Linked to original sources

arXiv2022

Magnetic-field-induced ab-plane rotation of the Eu magnetic moments in trigonal EuMg2Bi2 and EuMg2Sb2 single crystals below their Neel temperatures

The thermodynamic and electronic-transport properties of trigonal EuMg2Bi2 in ab-plane magnetic fields Hx and the A-type antiferromagnetic structure have recently been reported. At a temperature of 1.8 K < TN, the Eu magnetic moments with spin S = 7/2 remain locked in the ab plane up to and above the ab-plane critical field Hxc = 27.5 kOe at which the Eu moments become parallel to Hx. Here additional measurements at low fields are reported that reveal a new spin-reorientation transition at a field Hc1 = 465 Oe where the Eu moments remain in the ab plane but become perpendicular to Hx. At higher fields, the moments cant towards the field resulting in M proportional to Hx up to Hxc. Similar results are reported from measurements of the magnetic properties of EuMg2Sb2 single crystals, where Hc1 = 220 Oe is found. Theory is formulated that models the low-field magnetic behavior of both materials, and the associated anisotropies are calculated. The ab-plane trigonal anisotropy in EuMg2Sb2 is found to be significantly smaller than in EuMg2Bi2.

cond-mat.str-el↗

arXiv2022

Uniaxial ferromagnetism in the kagome metal TbV${_6}$Sn${_6}$

The synthesis and characterization of the vanadium-based kagome metal TbV${_6}$Sn${_6}$ is presented. X-ray measurements confirm this material forms with the same crystal structure type as the recently investigated kagome metals GdV$_6$Sn$_6$ and YV$_6$Sn$_6$, with space group symmetry P6/mmm. A signature of a phase transition at 4.1K is observed in heat capacity, resistivity, and magnetic susceptibility measurements, and both resistivity and magnetization measurements exhibit hysteresis in magnetic field. Furthermore, a strikingly large anisotropy in the magnetic susceptibility was observed, with the c-axis susceptibility nearly 100 times the ab plane susceptibility at 2K. This is highly suggestive of uniaxial ferromagnetism, and the large size of 9.4$μ_b$/f.u. indicates the Tb$^{3+}$ $4f$ electronic moments cooperatively align perpendicular to the V kagome lattice plane. The entropy at the phase transition is nearly Rln(2), indicating that the CEF ground state of the Tb$^{3+}$ ion is a doublet, and therefore the sublattice of $4f$ electrons in this material can be shown to map at low temperatures to the Ising model in a D$_{6h}$ symmetry environment. Hall measurements at temperatures from 300K to 1.7K can be described by two-band carrier transport at temperatures below around 150K, with a large increase in both hole and electron mobilities, similar to YV$_6$Sn$_6$, and an anomalous Hall effect is seen below the ordering temperature. Angle-resolved photoemission measurements above the magnetic ordering temperature reveal typical kagome dispersions. Our study presents TbV${_6}$Sn${_6}$ as an ideal system to study the interplay between Ising ferromagnetism and non-trivial electronic states emerging from a kagome lattice.

cond-mat.str-el↗

arXiv2022

Polaronic Conductivity in Cr$_2$Ge$_2$Te$_6$ Single Crystals

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spin-charge conversion applications. Cr$_2$Ge$_2$Te$_6$ retains long-range magnetic order in bilayer at cryogenic temperatures and shows complex magnetic interactions with considerable magnetic anisotropy. Here, we performed a series of structural, magnetic, X-ray scattering, electronic, thermal transport and first-principles calculation studies which reveal that localized electronic charge carriers in Cr$_2$Ge$_2$Te$_6$ are dressed by surrounding lattice and are involved in polaronic transport via hopping that is sensitive on details of magnetocrystalline anisotropy. This opens possibility for manipulation of charge transport in Cr$_2$Ge$_2$Te$_6$ - based devices by electron-phonon- and spin-orbit coupling-based tailoring of polaron properties.

cond-mat.mtrl-sci↗

arXiv2020

Electron irradiation effects on superconductivity in PdTe$_2$: an application of a generalized Anderson theorem

Low temperature ($\sim$ 20~K) electron irradiation with 2.5 MeV relativistic electrons was used to study the effect of controlled non-magnetic disorder on the normal and superconducting properties of the type-II Dirac semimetal PdTe$_2$. We report measurements of longitudinal and Hall resistivity, thermal conductivity and London penetration depth using tunnel-diode resonator technique for various irradiation doses. The normal state electrical resistivity follows Matthiessen rule with an increase of the residual resistivity at a rate of $\sim$0.77$ μΩ$cm/$(\textrm{C}/\textrm{cm}^2)$. London penetration depth and thermal conductivity results show that the superconducting state remains fully gapped. The superconducting transition temperature is suppressed at a non-zero rate that is about sixteen times slower than described by the Abrikosov-Gor'kov dependence, applicable to magnetic impurity scattering in isotropic, single-band $s$-wave superconductors. To gain information about the gap structure and symmetry of the pairing state, we perform a detailed analysis of these experimental results based on insight from a generalized Anderson theorem for multi-band superconductors. This imposes quantitative constraints on the gap anisotropies for each of the possible pairing candidate states. We conclude that the most likely pairing candidate is an unconventional $A_{1g}^{+-}$ state. While we cannot exclude the conventional $A_{1g}^{++}$ and the triplet $A_{1u}$, we demonstrate that these states require additional assumptions about the orbital structure of the disorder potential to be consistent with our experimental results, e.g., a ratio of inter- to intra-band scattering for the singlet state significantly larger than one. Due to the generality of our theoretical framework, we think that it will also be useful for irradiation studies in other spin-orbit-coupled multi-orbital systems.

cond-mat.supr-con↗

arXiv2017

Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy

We use high resolution angle-resolved photoemission spectroscopy (ARPES) and electronic structure calculations to study the electronic properties of rare-earth monoantimonides RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu). The experimentally measured Fermi surface (FS) of RSb consists of at least two concentric hole pockets at the $Γ$ point and two intersecting electron pockets at the $X$ point. These data agree relatively well with the electronic structure calculations. Detailed photon energy dependence measurements using both synchrotron and laser ARPES systems indicate that there is at least one Fermi surface sheet with strong three-dimensionality centered at the $Γ$ point. Due to the "lanthanide contraction", the unit cell of different rare-earth monoantimonides shrinks when changing rare-earth ion from CeSb to LuSb. This results in the differences in the chemical potentials in these compounds, which is demonstrated by both ARPES measurements and electronic structure calculations. Interestingly, in CeSb, the intersecting electron pockets at the $X$ point seem to be touching the valence bands, forming a four-fold degenerate Dirac-like feature. On the other hand, the remaining rare-earth monoantimonides show significant gaps between the upper and lower bands at the $X$ point. Furthermore, similar to the previously reported results of LaBi, a Dirac-like structure was observed at the $Γ$ point in YSb, CeSb, and GdSb, compounds showing relatively high magnetoresistance. This Dirac-like structure may contribute to the unusually large magnetoresistance in these compounds.

cond-mat.mtrl-sci↗

arXiv2016

Discovery of Dirac Node Arcs in PtSn4

In topological quantum materials the conduction and valence bands are connected at points (Dirac/Weyl semimetals) or along lines (Line Node semimetals) in the momentum space. Numbers of studies demonstrated that several materials are indeed Dirac/Weyl semimetals. However, there is still no experimental confirmation of materials with line nodes, in which the Dirac nodes form closed loops in the momentum space. Here we report the discovery of a novel topological structure - Dirac node arcs - in the ultrahigh magnetoresistive material PtSn4 using laser-based angle-resolved photoemission spectroscopy (ARPES) data and density functional theory (DFT) calculations. Unlike the closed loops of line nodes, the Dirac node arc structure resembles the Dirac dispersion in graphene that is extended along one dimension in momentum space and confined by band gaps on either end. We propose that this reported Dirac node arc structure is a novel topological state that provides a novel platform for studying the exotic properties of Dirac Fermions.

cond-mat.mtrl-sci↗

arXiv2014

Dramatic Changes in the Electronic Structure Upon Transition to the Collapsed Tetragonal Phase in CaFe2As2

We use angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic structure of CaFe$_2$As$_2$ in previously unexplored collapsed tetragonal (CT) phase. This unusual phase of the iron arsenic high temperature superconductors was hard to measure as it exists only under pressure. By inducing internal strain, via the post growth, thermal treatment of the single crystals, we were able to stabilize the CT phase at ambient-pressure. We find significant differences in the Fermi surface topology and band dispersion data from the more common orthorhombic-antiferromagnetic or tetragonal-paramagnetic phases, consistent with electronic structure calculations. The top of the hole bands sinks below the Fermi level, which destroys the nesting present in parent phases. The absence of nesting in this phase along with apparent loss of Fe magnetic moment, are now clearly experimentally correlated with the lack of superconductivity in this phase.

cond-mat.supr-con↗

arXiv2011

Metallic surface electronic state in half-Heusler compounds RPtBi (R = Lu, Dy, Gd)

Rare-earth platinum bismuth (RPtBi) has been recently proposed to be a potential topological insulator. In this paper we present measurements of the metallic surface electronic structure in three members of this family, using angle resolved photoemission spectroscopy (ARPES). Our data shows clear spin-orbit splitting of the surface bands and the Kramers' degeneracy of spins at the Gamma and M points, which is nicely reproduced with our full-potential augmented plane wave calculation for a surface electronic state. No direct indication of topologically non-trivial behavior is detected, except for a weak Fermi crossing detected in close vicinity to the Gamma point, making the total number of Fermi crossings odd. In the surface band calculation, however, this crossing is explained by another Kramers' pair where the two splitting bands are very close to each other. The classification of this family of materials as topological insulators remains an open question.

cond-mat.str-el↗

arXiv2010

Surface-driven electronic structure in LaFeAsO studied by angle resolved photoemission spectroscopy

We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle resolved photoemission spectroscopy (ARPES). By comparing with a full-potential Linear Augmented PlaneWave calculation we show that the extra large Gamma hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong polarization dependence of the band structure and a temperature-dependent hole-like band around the M point. The two phenomena give additional evidences for the existence of the surface-driven electronic structure.

cond-mat.supr-con↗

arXiv2007

Quantum phases in a doped Mott insulator on the Shastry-Sutherland lattice

We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we find a strong asymmetry between electron and hole doping. Upon electron doping an unusual metal with strong valence bond correlations forms. Hole doped systems are d-wave RVB superconductors in which superconductivity is strongly enhanced by the emergence of inhomogeneous plaquette bond order.

cond-mat.str-el↗