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Yongjian Zhou

Publications and source records attributed to Yongjian Zhou.

15 recordsLinked to original sources

SpecPrefetch: Parameter-Efficient Expert Prefetching for Sparse MoE Foundation Models

Sparse Mixture-of-Experts (MoE) models expand foundation model capacity through conditional expert activation, but their full expert pools remain difficult to deploy under limited accelerator memory. Although expert offloading alleviates memory pressure by moving inactive experts to host memory or storage, it introduces a routing-dependent transfer bottleneck: required experts are known only after native top-\(K\) routing, which serializes routing, expert loading, and expert execution during inference. To address this bottleneck, we propose SpecPrefetch, a parameter-efficient prefetching framework for offloaded MoE inference. SpecPrefetch uses a shared lightweight adapter to predict next-layer expert candidates only for asynchronous transfer, while the frozen native router still determines the final executed experts. By separating transfer prediction from execution routing, SpecPrefetch reduces exposed expert-loading latency without changing pretrained routing semantics, so prediction errors affect transfer efficiency rather than model outputs. In addition, a window-aware scheduler prioritizes feasible transfers under cache and bandwidth constraints. Across Qwen3-VL-30B-A3B and DeepSeek-VL2-Tiny, SpecPrefetch achieves the best average expert recall in 9 out of 10 model-benchmark settings with substantially fewer trainable parameters than learned predictor baselines. On a Snapdragon 8 Elite device, SpecPrefetch further improves decoding throughput by up to \(20\%\) over a compute-optimized offloading runtime, demonstrating practical benefits for storage-constrained MoE deployment. The code and model weights are available at https://github.com/wei390/SpecPrefetch.

cs.AI

Stacking-Engineered Thermal Transport and Phonon Filtering in Rhenium Disulfide

Cross-plane heat transport is a critical bottleneck for van der Waals (vdW) electronics, yet its microscopic governing principles remain elusive. We demonstrate that stacking order is an effective control knob for cross-plane phonon transport in multilayer Rhenium Disulfide (ReS2). Thickness-dependent thermal conductivity measurements reveal remarkably long cross-plane phonon mean free paths (MFPs) (>= 200-300 nm) and provide a direct experimental observation of the transition from quasi-ballistic transport to a thickness-independent ballistic limit. AA stacking exhibits nearly double the cross-plane thermal conductivity of AB stacking, driven by longer acoustic phonon lifetimes from a more "coherent" interlayer registry. Integrated deep neural-network molecular dynamics reveals that phonon filtering in ReS2 is fundamentally frequency-selective: weak vdW coupling acts as a low-pass filter, whereas stronger coupling broadens the transmission passband. These results establish ReS2 as a model system where stacking order and interlayer coupling can be engineered to tune heat conduction across diffusive, quasi-ballistic, and ballistic regimes, offering a new framework for thermal management in 2D electronics.

cond-mat.mtrl-sci

Electrical 180o switching of Néel vector in spin-splitting antiferromagnet

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.

cond-mat.mtrl-sci

Electrical switching of the perpendicular Neel order in a collinear antiferromagnet

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the Néel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the Néel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the Néel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA.

physics.app-ph

Antiferromagnetic magnonic charge current generation via ultrafast optical excitation

Néel spin-orbit torque allows a charge current pulse to efficiently manipulate the Néel vector in antiferromagnets, which offers a unique opportunity for ultrahigh density information storage with high speed. However, the reciprocal process of Néel spin-orbit torque, the generation of ultrafast charge current in antiferromagnets has not been demonstrated. Here, we report the experimental observation of charge current generation in antiferromagnetic metallic Mn2Au thin films using ultrafast optical excitation. The ultrafast laser pulse excites antiferromagnetic magnons, resulting in instantaneous non-equilibrium spin polarization at the antiferromagnetic spin sublattices with broken spatial symmetry. Then the charge current is generated directly via spin-orbit fields at the two sublattices, which is termed as the reciprocal phenomenon of Néel spin-orbit torque, and the associated THz emission can be detected at room temperature. Besides the fundamental significance on the Onsager reciprocity, the observed magnonic charge current generation in antiferromagnet would advance the development of antiferromagnetic THz emitter.

cond-mat.mtrl-sci

Ordered creation and motion of skyrmions with surface acoustic wave

Magnetic skyrmions with a well-defined spin texture have shown unprecedented potential for various spintronic applications owning to their topologically non-trivial and quasiparticle properties. To put skyrmions into practical technology, efficient manipulation, especially the inhibition of skyrmion Hall effect (SkHE) has been intensively pursued. In spite of the recent progress made on reducing SkHE in several substituted systems, such as ferrimagnets and synthetic antiferromagnets, the organized creation and current driven motion of skyrmions with negligible SkHE in ferromagnets remain challenging. Here, by embeding the [Co/Pd] multilayer into a surface acoustic wave (SAW) delay line, we experimentally realized the ordered generation of magnetic skyrmions. The resultant current-induced skyrmions movement with negligible SkHE was observed, which can be attributed to the energy redistribution of the system during the excitation of SAW. Our findings open up an unprecedentedly new perspective for manipulating topological solitons, and would advance the development of skyrmionics and spin acousto-electronics.

cond-mat.mtrl-sci

Long-distance propagation of high-velocity antiferromagnetic spin waves

We report on coherent propagation of antiferromagnetic (AFM) spin waves over a long distance ($\sim$10 $μ$m) at room temperature in a canted AFM $α$-Fe$_2$O$_3$ with the Dzyaloshinskii-Moriya interaction (DMI). Unprecedented high group velocities (up to 22.5 km/s) are characterized by microwave transmission using all-electrical spin wave spectroscopy. We derive analytically AFM spin-wave dispersion in the presence of the DMI which accounts for our experimental results. The AFM spin waves excited by nanometric coplanar waveguides with large wavevectors enter the exchange regime and follow a quasi-linear dispersion relation. Fitting of experimental data with our theoretical model yields an AFM exchange stiffness length of 1.7 angstrom. Our results provide key insights on AFM spin dynamics and demonstrate high-speed functionality for AFM magnonics.

cond-mat.mtrl-sci

Manipulating THz Spin Current Dynamics by the Dzyaloshinskii-Moriya Interaction in Antiferromagnetic Hematite

An important vision of modern magnetic research is to use antiferromagnets as controllable and active ultrafast components in spintronic devices. Hematite is a promising model material in this respect because its pronounced Dzyaloshinskii-Moriya interaction leads to the coexistence of antiferromagnetism and weak ferromagnetism. Here, we use femtosecond laser pulses to drive terahertz spin currents from hematite into an adjacent Pt layer. We find two contributions to the generation of the spin current with distinctly different dynamics: the impulsive stimulated Raman scatting that relies on the antiferromagnetic order and the ultrafast spin Seebeck effect that relies on the net magnetization. The total THz spin current dynamics can thus be manipulated by a medium-strength magnetic field. The controllability of the THz spin current achieved in hematite opens the pathway toward controlling the exact spin current dynamics from ultrafast antiferromagnetic spin sources.

cond-mat.mes-hall

Observation of spin splitting torque in a collinear antiferromagnet RuO2

Current-induced spin torques provide efficient data writing approaches for magnetic memories. Recently, the spin splitting torque (SST) was theoretically predicted (R. González-Hernández et al. Phys. Rev. Lett. 126, 127701 (2021)), which combines advantages of conventional spin transfer torque (STT) and spin-orbit torque (SOT) as well as enables controllable spin polarization. Here we provide the experimental evidence of SST in collinear antiferromagnet RuO2 films. The spin current direction is found to be correlated to the crystal orientation of RuO2 and the spin polarization direction is dependent on (parallel to) the Néel vector. These features are quite characteristic for the predicted SST. Our finding not only present a new member for the spin torques besides traditional STT and SOT, but also proposes a promising spin source RuO2 for spintronics.

cond-mat.mtrl-sci

Controllable anomalous Nernst effect in an antiperovskite antiferromagnet

Anomalous Nernst effect (ANE), the generation of a transverse electric voltage by a longitudinal temperature gradient, has attracted increasing interests of researchers recently, due to its potential in the thermoelectric power conversion and close relevance to the Berry curvature of the band structure. Avoiding the stray field of ferromagnets, ANE in antiferromagnets (AFM) has the advantage of realizing highly efficient and densely integrated thermopiles. Here, we report the observation of ANE in an antiperovskite noncollinear AFM Mn3SnN experimentally, which is triggered by the enhanced Berry curvature from Weyl points located close to the Fermi level. Considering that antiperovskite Mn3SnN has rich magnetic phase transition, we modulate the noncollinear AFM configurations by the biaxial strain, which enables us to control its ANE. Our findings provide a potential class of materials to explore the Weyl physics of noncollinear AFM as well as realizing antiferromagnetic spin caloritronics that exhibits promising prospects for energy conversion and information processing.

cond-mat.mtrl-sci

Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet

Out-of-plane spin polarization σ_z has attracted increasing interests of researchers recently, due to its potential in high-density and low-power spintronic devices. Noncollinear antiferromagnet (AFM), which has unique 120° triangular spin configuration, has been discovered to possess σ_z. However, the physical origin of σ_z in noncollinear AFM is still not clear, and the external magnetic field-free switching of perpendicular magnetic layer using the corresponding σ_z has not been reported yet. Here, we use the cluster magnetic octupole in antiperovskite AFM Mn3SnN to demonstrate the generation of σ_z. σ_z is induced by the precession of carrier spins when currents flow through the cluster magnetic octupole, which also relies on the direction of the cluster magnetic octupole in conjunction with the applied current. With the aid of σ_z, current induced spin-orbit torque (SOT) switching of adjacent perpendicular ferromagnet is realized without external magnetic field. Our findings present a new perspective to the generation of out-of-plane spin polarizations via noncollinear AFM spin structure, and provide a potential path to realize ultrafast high-density applications.

cond-mat.mtrl-sci

Magnon-mediated interlayer coupling in an all-antiferromagnetic junction

The interlayer coupling mediated by fermions in ferromagnets brings about parallel and anti-parallel magnetization orientations of two magnetic layers, resulting in the giant magnetoresistance, which forms the foundation in spintronics and accelerates the development of information technology. However, the interlayer coupling mediated by another kind of quasi-particle, boson, is still lacking. Here we demonstrate such a static interlayer coupling at room temperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the two antiferromagnetic Fe2O3 layers are functional materials and the antiferromagnetic Cr2O3 layer serves as a spacer. The Néel vectors in the top and bottom Fe2O3 are strongly orthogonally coupled, which is bridged by a typical bosonic excitation (magnon) in the Cr2O3 spacer. Such an orthogonally coupling exceeds the category of traditional collinear interlayer coupling via fermions in ground state, reflecting the fluctuating nature of the magnons, as supported by our magnon quantum well model. Besides the fundamental significance on the quasi-particle-mediated interaction, the strong coupling in an antiferromagnetic magnon junction makes it a realistic candidate for practical antiferromagnetic spintronics and magnonics with ultrahigh-density integration.

cond-mat.mtrl-sci

Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator

Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit torque (SOT) switching of the magnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy, where the switching is detected by spin Hall magnetoresistance. Reversible switching is found at room temperature for a threshold current density of 10^7 A cm^-2. The YIG sublattices with antiparallel and unequal magnetic moments are aligned parallel or antiparallel to the direction of current pulses, which is consistent to the Neel order switching in antiferromagnetic system. It is proposed that such a switching behavior may be triggered by the antidamping-torque acting on the two antiparallel sublattices of FiMI. Our finding not only broadens the magnetization switching by electrical means and promotes the understanding of magnetization switching, but also paves the way for all-electrically modulated microwave devices and spin caloritronics with low power consumption.

cond-mat.mtrl-sci

Stacking Order Driven Optical Properties and Carrier Dynamics in ReS2

Two distinct stacking orders in ReS2 are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one-unit cell displacement along the a axis. First-principle calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm-1 for AA stacking, and 20 cm-1 for AB stacking, making a simple tool for determining the stacking orders in ReS2. Polarized photoluminescence (PL) reveals that AB stacking possesses blue-shifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular to b axis. Our findings underscore the stacking-order driven optical properties and carrier dynamics of ReS2, mediate many seemingly contradictory results in literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.

cond-mat.mtrl-sci

Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor

Optical grating technique, where optical gratings are generated via light inference, has been widely used to measure charge carrier and phonon transport in semiconductors. In this paper, compared are three types of transient optical grating techniques: transient grating diffraction, transient grating heterodyne, and grating imaging, by utilizing them to measure carrier diffusion coefficient in a GaAs/AlAs superlattice. Theoretical models are constructed for each technique to extract the carrier diffusion coefficient, and the results from all three techniques are consistent. Our main findings are: (1) the transient transmission change obtained from transient grating heterodyne and grating imaging techniques are identical, even these two techniques originate from different detection principles; and (2) By adopting detection of transmission change (heterodyne amplification) instead of pure diffraction, the grating imaging technique (transient grating heterodyne) has overwhelming advantage in signal intensity than the transient grating diffraction, with a signal intensity ratio of 315:1 (157:1).

cond-mat.mtrl-sci