arXiv subjects

Yongjie Xie

Publications and source records attributed to Yongjie Xie.

4 recordsLinked to original sources

arXiv2025

Emergent Chiral Spin Crystal Phase in (111) SrRuO3 Thin Films

Perovskite ruthenates are fascinating playgrounds for exploring topological spin textures, but generally rely on extrinsic mechanisms to trigger the noncoplanar states. Here we report the discovery of an emergent chiral spin crystal phase in (111) SrRuO3 epitaxial films, characterized by a significant topological Hall effect and noncoplanar spin arrangements with different propagation vectors along two orthogonal directions. Instead of driven by the enhanced Dzyaloshinskii-Moriya interaction due to broken inversion symmetry at heterointerfaces, this emergent state arises intrinsically from the interplay of dipolar interactions and magnetic frustration, leading to the stabilization of topological phases in much thicker films. These findings open a new pathway for creating and controlling the topological spin states in perovskites, with broad implications for spintronic device design.

cond-mat.str-el↗

arXiv2025

Optical Excitations of Flat Bands Induced by Exciton Condensation in Ta$_2$Pd$_3$Te$_{5}$

We report on the charge dynamics of Ta$_2$Pd$_3$Te$_5$ using temperature-dependent optical spectroscopy with polarized light. We observe a metal-insulator transition characterized by the collapse of Drude response and the emergence of sharp and narrow absorption peaks at low temperatures. Unlike previous excitonic insulator candidates such as TiSe$_2$ and Ta$_2$NiSe$_5$, where the excitonic order is intertwined with charge density wave or structural instabilities, the sharp features in Ta$_2$Pd$_3$Te$_5$ point to intrinsic excitonic excitations associated with ultra-flat bands driven by many-body renormalization of the band structure via spontaneous exciton condensation. Our findings thus provide clear-cut optical evidence for exciton condensation in a bulk crystal and establish Ta$_2$Pd$_3$Te$_5$ as a promising platform for exploring correlated quantum phases and novel excitonic phenomena.

cond-mat.mtrl-sci↗

arXiv2025

Ferroelectricity in undoped HfO2 down to one-unit-cell on Si substrate

Hafnium oxide (HfO2), particularly at low-dimensional scales, exhibits extensive promising applications in ultrahigh density devices like low-power logic and non-volatile memory devices due to its compatibility with current semiconductor technology1-5. However, achieving ferroelectricity (FE) at ultimate scale especially in undoped HfO2 remains challenging as the non-centrosymmetric FE phase, so-called O-III (space group: Pca21) is metastable and FE has a strong tendency of depolarization with the decrease in thickness6. Up to now, this phase has usually stabilized via doping with other elements7-9. But the minimum film thickness is still limited to 1 nm, about 2-unit-cell, to keep FE8. Thinner and undoped films, conducive to further miniature device size and avoid contamination during deposition process, have been a challenge to fabricate on Si substrates. Herein, we report the robust FE observed in undoped HfO2 ultrathin films directly grown on Si substrate via atomic layer deposition (ALD) and post-heat treat in vacuum. The so-fabricated ferroelectric O-III phase contains about 4.48 at% oxygen vacancy, is robust even monoclinic phase (space group: P21/c) coexists. The spontaneous and switchable polarization is remarkably stable, still surviving even in films down to 0.5 nm (one-unit-cell). Our results show the robust FE O-III phase can be obtained in films down to one-unit-cell in thickness on Si, providing a practical way to fabricating this important material in thickness limit.

cond-mat.mtrl-sci↗

arXiv2023

Surface skyrmions and dual topological Hall effect in antiferromagnetic topological insulator EuCd$_2$As$_2$

In this work, we synthesized single crystal of EuCd$_2$As$_2$, which exhibits A-type antiferromagnetic (AFM) order with in-plane spin orientation below $T_N$ = 9.5~K.Optical spectroscopy and transport measurements suggest its topological insulator (TI) nature with an insulating gap around 0.1eV. Remarkably, a dual topological Hall resistivity that exhibits same magnitude but opposite signs in the positive to negative and negative to positive magnetic field hysteresis branches emerges below 20~K. With magnetic force microscopy (MFM) images and numerical simulations, we attribute the dual topological Hall effect to the Néel-type skyrmions stabilized by the interactions between topological surface states and magnetism, and the sign reversal in different hysteresis branches indicates potential coexistence of skyrmions and antiskyrmions. Our work uncovers a unique two-dimensional (2D) magnetism on the surface of intrinsic AFM TI, providing a promising platform for novel topological quantum states and AFM spintronic applications.

cond-mat.supr-con↗