arXiv subjects

Yongjin Cho

Publications and source records attributed to Yongjin Cho.

10 recordsLinked to original sources

arXiv2026

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

We present a systematic investigation of Ga adsorption and desorption kinetics on the wurtzite GaN(0001) surface using four in situ techniques operated simultaneously: reflection high-energy electron diffraction, laser reflectometry, line-of-sight quadrupole mass spectrometry, and optical pyrometry. Flux- and temperature-dependent experiments are performed for Ga coverages ranging from the submonolayer to the droplet regime. Despite their distinct transient responses, the signals from all four techniques and their trends with surface coverage are quantitatively reproduced by a unified kinetic model of Ga adsorption, diffusion, and desorption. An Arrhenius analysis of the Ga adlayer desorption yields an activation energy of (2.87 $\pm$ 0.04) eV.

physics.app-ph↗

arXiv2026

RLDX-1 Technical Report

While Vision-Language-Action models (VLAs) have shown remarkable progress toward human-like generalist robotic policies through the versatile intelligence (i.e. broad scene understanding and language-conditioned generalization) inherited from pre-trained Vision-Language Models, they still struggle with complex real-world tasks requiring broader functional capabilities (e.g. motion awareness, long-term memory, and physical sensing). To address this, we introduce RLDX-1, a general-purpose robotic policy for dexterous manipulation built on the Multi-Stream Action Transformer (MSAT), an architecture that unifies these capabilities by integrating heterogeneous modalities through modality-specific streams with cross-modal joint self-attention. RLDX-1 further combines this architecture with system-level design choices, including data synthesis for rare manipulation scenarios, learning procedures specialized for human-like manipulation, and inference optimizations for real-time deployment. Through empirical evaluation, we show that RLDX-1 consistently outperforms recent frontier VLAs (e.g. $\pi_{0.5}$ and GR00T N1.6) across both simulation benchmarks and real-world tasks that require broad functional capabilities beyond general versatility. In particular, RLDX-1 shows superiority in ALLEX humanoid tasks by achieving success rates of 86.8% while $\pi_{0.5}$ and GR00T N1.6 achieve around 40%, highlighting the ability of RLDX-1 to control a high-DoF humanoid robot under diverse functional demands. Together, these results position RLDX-1 as a promising step toward reliable VLAs for complex, contact-rich, and dynamic real-world dexterous manipulation.

cs.RO↗

arXiv2026

Ballistic transport in nanodevices based on single-crystalline Cu thin film

In ballistic transport, the movement of charged carriers is essentially unimpeded by scattering events. In this limit, microscopic parameters such as crystal momentum, spin and quantum phases are well conserved, allowing electrons to maintain their quantum coherence over longer distances. Nanoscale materials, like carbon nanotubes, graphene, and nanowires, exhibit ballistic transport. However, their scalability in devices is significantly limited. While deposited metal films offer excellent scalability for nanodevices, achieving ballistic transport in these films poses a challenge due to their short electronic mean free path. Here, we investigated the electronic transport in cross-geometry devices fabricated with 90 nm-thick copper films without grain boundaries. We observed ballistic transport in devices with channel width smaller than 150 nm below 85 K by measuring negative bend resistance. Our findings would open the opportunity for probing intrinsic quantum properties of Cu, and for realizing scalable low-loss signal transmission and high-quality interconnects in semiconductor devices.

cond-mat.mes-hall↗

arXiv2022

Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates

N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature helped in removing native surface oxides and impurities from the N-polar surface of the substrate enabling successful homoepitaxy. Subsequent epitaxial growth of AlN layer on the in situ cleaned substrates, grown in sufficiently high Al droplet regime, exhibited smooth surface morphologies with clean and wide atomic steps. KOH etch studies confirmed the N-polarity of the homoepitaxial films. Secondary ion mass spectrometry profiles show Si and H impurity concentrations below the noise levels, whereas O and C impurities concentrations of ~ 8x10^{17} atoms/cm^3 and ~ 2x10^{17} atoms/cm^3 are observed respectively. Though the structural defect densities are low, they interestingly appear as inversion domains of different dimensionalities.

cond-mat.mtrl-sci↗

arXiv2021

Infrared dielectric functions and Brillouin zone center phonons of $α$-Ga$_2$O$_3$ compared to $α$-Al$_2$O$_3$

We determine the anisotropic dielectric functions of rhombohedral $α$-Ga$_2$O$_3$ by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high frequency and static dielectric constants. We perform density functional theory computations and determine the phonon dispersion for all branches in the Brillouin zone, and we derive all phonon mode parameters at the Brillouin zone center including Raman-active, infrared-active, and silent modes. Excellent agreement is obtained between our experimental and computation results as well as among all previously reported partial information from experiment and theory. We also compute the same information for $α$-Al$_2$O$_3$, the binary parent compound for the emerging alloy of $α$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$, and use results from previous investigations [Schubert, Tiwald, and Herzinger, Phys. Rev. B 61, 8187 (2000)] to compare all properties among the two isostructural compounds. From both experimental and theoretical investigations we compute the frequency shifts of all modes between the two compounds. Additionally, we calculate overlap parameters between phonon mode eigenvectors and discuss the possible evolution of all phonon modes into the ternary alloy system and whether modes may form single mode or more complex mode behaviors.

cond-mat.mtrl-sci↗

arXiv2021

Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3

We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an $α$-Ga$_2$O$_3$ thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on $m$-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to 8.75 eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with $M_0$-type van Hove singularities for polarization perpendicular to the $c$ axis, $E_{0,\perp}=5.46(6)$ eV and $E_{0,\perp}=6.04(1)$ eV, and one direct band-to-band transition with $M_1$-type van Hove singularity for polarization parallel with $E_{0,||}=5.44(2)$ eV. We further identify excitonic contributions with small binding energy of 7 meV associated with the lowest ordinary transition, and a hyperbolic exciton at the $M_1$-type critical point with large binding energy of 178 meV.

cond-mat.mtrl-sci↗

arXiv2020

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.

physics.app-ph↗

arXiv2019

Ensemble-Based Deep Reinforcement Learning for Chatbots

Trainable chatbots that exhibit fluent and human-like conversations remain a big challenge in artificial intelligence. Deep Reinforcement Learning (DRL) is promising for addressing this challenge, but its successful application remains an open question. This article describes a novel ensemble-based approach applied to value-based DRL chatbots, which use finite action sets as a form of meaning representation. In our approach, while dialogue actions are derived from sentence clustering, the training datasets in our ensemble are derived from dialogue clustering. The latter aim to induce specialised agents that learn to interact in a particular style. In order to facilitate neural chatbot training using our proposed approach, we assume dialogue data in raw text only -- without any manually-labelled data. Experimental results using chitchat data reveal that (1) near human-like dialogue policies can be induced, (2) generalisation to unseen data is a difficult problem, and (3) training an ensemble of chatbot agents is essential for improved performance over using a single agent. In addition to evaluations using held-out data, our results are further supported by a human evaluation that rated dialogues in terms of fluency, engagingness and consistency -- which revealed that our proposed dialogue rewards strongly correlate with human judgements.

cs.AI↗

arXiv2019

Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy

Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality hBN layers are grown at high substrate temperatures, $>$1600$^\circ$C, and low boron fluxes, $\sim1\times10^{-8}$ Torr beam equivalent pressure. \emph{In-situ} reflection high energy electron diffraction (RHEED) revealed the growth of hBN layers with $60^\circ$ rotational symmetry and the $[11\bar20]$ axis of hBN parallel to the $[1\bar100]$ axis of the sapphire substrate. Unlike the rough, polycrystalline films previously reported, atomic force microscopy (AFM) and transmission electron microscopy (TEM) characterization of these films demonstrate smooth, layered, few-nanometer hBN films on a nitridated sapphire substrate. This demonstration of high-quality hBN growth by MBE is a step towards its integration into existing epitaxial growth platforms, applications, and technologies.

cond-mat.mtrl-sci↗

arXiv2019

The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System

The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semiconductor NbN/GaN heterojunctions. This article reviews the fascinating and emerging physics and science of these new nitride materials. It also discusses their potential applications in future generations of devices that take advantage of the photonic and electronic devices eco-system based on transistors, light-emitting diodes, and lasers that have already been created by the nitride semiconductors.

cond-mat.mtrl-sci↗