arXiv subjects

Yongpan Li

Publications and source records attributed to Yongpan Li.

7 recordsLinked to original sources

arXiv2026

Spontaneous Fully Compensated Ferrimagnetism

We propose a general mechanism for the spontaneous emergence of filling-enforced fully compensated ferrimagnetism (fFIM), characterized by zero net magnetization yet ferromagnetic-like spin-split band structures. Using Hartree-Fock mean-field calculations of the Hubbard model, we map out the stability regime of spontaneous fFIM over a broad parameter space of interaction strength and staggered potential. We show the unique quantum-geometry-governed optical selection rules and the abundant valley- and spin-related physics of electronics and optics arising from the emergence of fFIM order, with tunable spin-polarized and valley-contrasting charge and spin currents. Furthermore, based on our theory, we demonstrate that spontaneous fFIM can be realized in nominally nonmagnetic graphene via defect engineering. Our results establish a unified framework for the mechanism, emergent properties, and materials realization of spontaneous fFIM, opening new opportunities for spintronic, valleytronic, and optoelectronic applications.

cond-mat.str-el↗

arXiv2025

Quantum metric-based optical selection rules

The optical selection rules dictate symmetry-allowed/forbidden transitions, playing a decisive role in engineering exciton quantum states and designing optoelectronic devices. While both the real (quantum metric) and imaginary (Berry curvature) parts of quantum geometry contribute to optical transitions, the conventional theory of optical selection rules in solids incorporates only Berry curvature. Here, we propose quantum metric-based optical selection rules. We unveil a universal quantum metric-oscillator strength correspondence for linear polarization of light and establish valley-contrasted optical selection rules that lock orthogonal linear polarizations to distinct valleys. Tight-binding and first-principles calculations confirm our theory in two models (altermagnet and Kane-Mele) and monolayer $d$-wave altermagnet $\mathrm{V_2SeSO}$. This work provides a quantum metric paradigm for valley-based spintronic and optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Unconventional Magneto-Optical Effects in Altermagnets

The ideal altermagnets are a class of collinear, crystal-symmetry-enforced fully compensated magnets with nonrelativistic spin-split bands, in which contributions from Berry curvature to magneto-optical effects (MOEs) are strictly forbidden by an effective time-reversal symmetry. Here we show that, in such systems, MOEs are exclusively induced by the quantum metric and, in realistic altermagnets, are typically dominated by it. We refer to Berry-curvature-induced MOEs as conventional MOEs and to quantum-metric-dominated MOEs as unconventional MOEs. We derive general formulas that incorporate both Berry curvature and quantum metric for unconventional MOEs in altermagnets, enabling a quantitative evaluation of their respective contributions. Through symmetry analysis, we prove that ideal altermagnets are constrained to exhibit only unconventional MOEs. Using the three-dimensional canonical altermagnet MnTe and the emerging two-dimensional bilayer twisted altermagnet CrSBr as illustrative examples, we demonstrate that unconventional MOEs are prevalent in altermagnets. Our results establish altermagnets as a natural platform for quantum-metric-driven optical phenomena, substantially broadening the scope of MOEs and providing concrete predictions that can be tested in future experimental studies.

cond-mat.mtrl-sci↗

arXiv2025

Quantum metric-induced generalized magneto-optical effects in $\mathcal{PT}$-symmetric antiferromagnets

The magneto-optical effects (MOEs), as fundamental physical phenomena, can reveal the electronic structures of materials. The related probing methods are widely used in the study of magnetic materials. The conventional MOEs are understood to arise from the Berry curvature (the imaginary part of the quantum geometry). Within the framework of conventional MOEs, space-time inversion ($\mathcal{PT}$) symmetric antiferromagnets are magneto-optically inactive. Here, we propose quantum metric (the real part of the quantum geometry) induced generalized MOEs and build generic formulas with quantum metric for Kerr and Faraday angles in three-dimensional and two-dimensional $\mathcal{PT}$-symmetric antiferromagnets. Combining the tight-binding model and first-principles calculations, we demonstrate the quantum metric-induced generalized MOEs in the $\mathcal{PT}$-symmetric antiferromagnets. Our theory broadens the research on MOEs and also provides a microscopic understanding of experimentally observed Kerr rotations in $\mathcal{PT}$-symmetric antiferromagnets. Our theory overcomes the zero-net-moment limitation preventing (conventional) MOEs from detecting magnetic phase transitions and spin orderings in $\mathcal{PT}$-symmetric antiferromagnets -- enabling non-destructive spin-state tomography in $\mathcal{PT}$-symmetric antiferromagnets and creating new quantum metric-based pathways toward ultrafast magneto-optical applications, such as memories and sensors.

cond-mat.mtrl-sci↗

arXiv2025

Two-dimensional fully-compensated Ferrimagnetism

Antiferromagnetic spintronics has long been a subject of intense research interest, and the recent introduction of altermagnetism has further ignited enthusiasm in the field. However, fully-compensated ferrimagnetism, which exhibits band spin splitting but zero net magnetization, has yet to receive enough attention. Since the experimental preparation of two-dimensional (2D) magnetic van der Waals (vdW) materials in 2017, 2D magnetic materials, thanks to their super tunability, have quickly become an important playground for spintronics. Here, we extend the concept of fully-compensated ferrimagnetism (fFIM) to two dimensions and propose 2D \textit{filling-enforced} fFIM, demonstrate its stability and ease of manipulation, and present three feasible realization schemes with respective exemplary candidate materials. A simple model for 2D fully-compensated ferrimagnets (fFIMs) is developed. Further investigation of 2D fFIMs' physical properties reveals that they not only exhibit significant magneto-optical response but also show fully spin-polarized currents and the anomalous Hall effect in the half-metallic states, displaying characteristics previously almost exclusive to ferromagnetic materials, greatly broadening the research and application prospects of spintronic materials.

cond-mat.mtrl-sci↗

arXiv2023

Stable Higher-Order Topological Dirac Semimetals with $\mathbb{Z}_2$ Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond

We demonstrate that a class of stable $\mathbb{Z}_2$ monopole charge Dirac point ($\mathbb{Z}_2$DP) phases can robustly exist in real materials, which surmounts the understanding: that is, a $\mathbb{Z}_2$DP is unstable and generally considered to be only the critical point of a $\mathbb{Z}_2$ nodal line ($\mathbb{Z}_2$NL) characterized by a $\mathbb{Z}_2$ monopole charge (the second Stiefel-Whitney number $w_2$) with space-time inversion symmetry but no spin-orbital coupling. For the first time, we explicitly reveal the higher-order bulk-boundary correspondence in the stable $\mathbb{Z}_2$DP phase. We propose the alternating-twisted multilayer graphene, which can be regarded as 3D twisted bilayer graphene (TBG), as the first example to realize such stable $\mathbb{Z}_2$DP phase and show that the Dirac points in the 3D TBG are essential degenerate at high symmetric points protected by crystal symmetries and carry a nontrivial $\mathbb{Z}_2$ monopole charge ($w_2=1$), which results in higher-order hinge states along the entire Brillouin zone of the $k_z$ direction. By breaking some crystal symmetries or tailoring interlayer coupling we are able to access $\mathbb{Z}_2$NL phases or other $\mathbb{Z}_2$DP phases with hinge states of adjustable length. In addition, we present other 3D materials which host $\mathbb{Z}_2$DPs in the electronic band structures and phonon spectra. We construct a minimal eight-band tight-binding lattice model that captures these nontrivial topological characters and furthermore tabulate all possible space groups to allow the existence of the stable $\mathbb{Z}_2$DP phases, which will provide direct and strong guidance for the realization of the $\mathbb{Z}_2$ monopole semimetal phases in electronic materials, metamaterials and electrical circuits, etc.

cond-mat.mes-hall↗

arXiv2023

Layer Construction of Three-Dimensional Z2 Monopole Charge Nodal Line Semimetals and prediction of the abundant candidate materials

The interplay between symmetry and topology led to the concept of symmetry-protected topological states, including all non-interacting and weakly interacting topological quantum states. Among them, recently proposed nodal line semimetal states with space-time inversion ($\mathcal{PT}$) symmetry which are classified by the Stiefel-Whitney characteristic class associated with real vector bundles and can carry a nontrivial $\mathbb{Z}_2$ monopole charge have attracted widespread attention. However, we know less about such 3D $\mathbb{Z}_2$ nodal line semimetals and do not know how to construct them. In this work, we first extend the layer construction previously used to construct topological insulating states to topological semimetallic systems. We construct 3D $\mathbb{Z}_2$ nodal line semimetals by stacking of 2D $\mathcal{PT}$-symmetric Dirac semimetals via nonsymmorphic symmetries. Based on our construction scheme, effective model and combined with first-principles calculations, we predict two types of candidate electronic materials for $\mathbb{Z}_2$ nodal line semimetals, namely 14 Si and Ge structures and 108 transition metal dichalcogenides $MX_2$ ($M$=Cr, Mo, W, $X$=S, Se, Te). Our theoretical construction scheme can be directly applied to metamaterials and circuit systems. Our work not only greatly enriches the candidate materials and deepens the understanding of $\mathbb{Z}_2$ nodal line semimetal states but also significantly extends the application scope of layer construction.

cond-mat.mtrl-sci↗