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Yongqian Zhu

Publications and source records attributed to Yongqian Zhu.

2 recordsLinked to original sources

Sliding ferroelectric control of unconventional magnetism in stacked bilayers

The control of unconventional magnetism, which displays ferromagnetism-like properties with compensated magnetization, has drawn intense attention for advancing antiferromagnetic spintronics. Here, through symmetry analysis, we propose a general stacking rule, characterized by a connection operator linking two stacked bilayers, for controlling unconventional magnetism via sliding ferroelectricity. Such rule enables the simultaneous switching of both electric polarization and nonrelativistic spin splitting or anomalous Hall effect in altermagnets, a class of collinear unconventional magnets. By comprehensively surveying the 80 layer groups, we identify all the stacking orders that allow for such two types of simultaneous switching. Furthermore, we extend the stacking rule to collinear compensated ferrimagnets, where the opposite-spin sublattices are not connected by any symmetry operator, yet the net magnetization remains zero. Combined with first-principles calculations, we demonstrate the sliding ferroelectric control of spin polarization and anomalous Hall effect in the altermagnetic AgF2 and Fe2MoSe4 bilayers. Our work provides a symmetry strategy for achieving ferroelectric control of unconventional magnetism in bilayer systems and opens avenues for exploring new types of magnetoelectric coupling.

cond-mat.mtrl-sci↗

Enforced symmetry breaking for anomalous valley Hall effect in two-dimensional hexagonal lattices

The anomalous valley Hall effect (AVHE) is a pivotal phenomenon that allows for the exploitation of the valley degree of freedom in materials. A general strategy for its realization and manipulation is crucial for valleytronics. Here, by considering all possible symmetries, we propose general rules for the realization and manipulation of AVHE in two-dimensional hexagonal lattices. The realization of AVHE requires breaking the enforced symmetry that is associated with different valleys or reverses the sign of Berry curvature. Further manipulation of AVHE requires asymmetry operators connecting two states with opposite signs of Berry curvature. These rules for realizing and manipulating AVHE are extendable to generic points in momentum space. Combined with first-principles calculations, we realize the controllable AVHE in four representative systems, i.e., monolayer AgCrP2Se6, CrOBr, FeCl2 and bilayer TcGeSe3. Our work provides symmetry rules for designing valleytronic materials that could facilitate the experimental detection and realistic applications.

cond-mat.mtrl-sci↗