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Yongqing Li

Publications and source records attributed to Yongqing Li.

At least 19 recordsLinked to original sources

Organizing Principles for Moiré Quantum Matter

Moiré flat bands in van der Waals bilayers are usually discussed through a small set of mechanisms associated with the $Γ$ and $K$ valleys of hexagonal crystals, and more recently with $M$-valleys systems. Here we show that this view is incomplete. The momentum-space location and effective local orbital character of the monolayer's band edge, in conjunction with the moiré symmetry and the symmetry representations of the resulting bands, provide a general set of organizing variables for the emergent low-energy moiré Hamiltonian. Applying fully relaxed first-principles calculations, band unfolding and symmetry-representation analysis to more than 600 commensurate twisted bilayers spanning all 2D lattice classes, we identify several routes to moiré quantum matter beyond the conventional single-orbital paradigm. The resulting flat bands realize trigonal, honeycomb, square, checkerboard and kagome-like Hubbard models with single-orbital, multi-orbital and multi-site Hilbert spaces; spin-orbit-coupled multi-orbital flat bands exhibit symmetry-indicated topology beyond the conventional $K$-valley setting; and nonsymmorphic moiré symmetries enforce semimetallic flat-band connectivity. Analogous quasi-one-dimensional flat-band structures are found in $M$-valley hexagonal systems and $X$-valley square or rectangular systems resulting from emergent momentum-space nonsymmorphic symmetries. Separately, coupled multi-valley manifolds with kagome-like connectivity are identified in several systems whose parent band edges lie at non-high-symmetry points. These results establish a valley-orbital-symmetry framework for connecting parent-material electronic structure to emergent moiré Hamiltonians relevant to correlated, topological and symmetry-enforced moiré phases.

cond-mat.mtrl-sci

Real-Time Reconstruction of 3D Bone Models via Very-Low-Dose Protocols

Patient-specific bone models are essential for designing surgical guides and preoperative planning, as they enable the visualization of intricate anatomical structures. However, traditional CT-based approaches for creating bone models are limited to preoperative use due to the low flexibility and high radiation exposure of CT and time-consuming manual delineation. Here, we introduce Semi-Supervised Reconstruction with Knowledge Distillation (SSR-KD), a fast and accurate AI framework to reconstruct high-quality bone models from biplanar X-rays in 30 seconds, with an average error under 1.0 mm, eliminating the dependence on CT and manual work. Additionally, high tibial osteotomy simulation was performed by experts on reconstructed bone models, demonstrating that bone models reconstructed from biplanar X-rays have comparable clinical applicability to those annotated from CT. Overall, our approach accelerates the process, reduces radiation exposure, enables intraoperative guidance, and significantly improves the practicality of bone models, offering transformative applications in orthopedics.

eess.IV

Transport Evidence for Wigner Crystals in Monolayer MoTe2

The crystallization of charge carriers, dubbed the Wigner crystal, is anticipated at low densities in clean two-dimensional electronic systems (2DES). While there has been extensive investigation across diverse platforms, probing spontaneous charge and spin ordering is hindered by disorder effects and limited interaction energies. Here, we report transport evidence for Wigner crystals with antiferromagnetic exchange interactions in high-quality, hexagonal boron nitride encapsulated monolayer MoTe2, a system that achieves a large interaction parameter (r_s) at proper hole densities. A density-tuned metal-insulator transition (MIT) occurring at 3.1E10^11 cm-2 (corresponding to r_s~32) and pronounced nonlinear charge transport in the insulating regime at low temperatures signify the formation of Wigner crystals. Thermal melting of the crystalline phase is observed below approximately 2 K via temperature-dependent nonlinear transport. Magnetoresistance measurements further reveal a substantial enhancement of spin susceptibility as approaching the MIT. The temperature dependence of spin susceptibility in the Wigner crystal phase closely follows the Curie-Weiss law, with the extracted negative Weiss constant illustrating antiferromagnetic exchange interactions. Furthermore, we have found the system exhibits metallic-like differential resistivity under finite DC bias, possibly indicating the existence of a non-equilibrium coherent state in the depinning of Wigner crystals. Our observations establish monolayer MoTe2 as a promising platform for exploring magnetic and dynamic properties of Wigner crystals.

cond-mat.str-el

SEE: Semantically Aligned EEG-to-Text Translation

Decoding neurophysiological signals into language is of great research interest within brain-computer interface (BCI) applications. Electroencephalography (EEG), known for its non-invasiveness, ease of use, and cost-effectiveness, has been a popular method in this field. However, current EEG-to-Text decoding approaches face challenges due to the huge domain gap between EEG recordings and raw texts, inherent data bias, and small closed vocabularies. In this paper, we propose SEE: Semantically Aligned EEG-to-Text Translation, a novel method aimed at improving EEG-to-Text decoding by seamlessly integrating two modules into a pre-trained BART language model. These two modules include (1) a Cross-Modal Codebook that learns cross-modal representations to enhance feature consolidation and mitigate domain gap, and (2) a Semantic Matching Module that fully utilizes pre-trained text representations to align multi-modal features extracted from EEG-Text pairs while considering noise caused by false negatives, i.e., data from different EEG-Text pairs that have similar semantic meanings. Experimental results on the Zurich Cognitive Language Processing Corpus (ZuCo) demonstrate the effectiveness of SEE, which enhances the feasibility of accurate EEG-to-Text decoding.

q-bio.QM

Interlayer Fermi polarons of excited exciton states in quantizing magnetic fields

The study of exciton-polarons has offered profound insights into the many-body interactions between bosonic excitations and their immersed Fermi sea within layered heterostructures. However, little is known about the properties of exciton polarons with interlayer interactions. Here through magneto-optical reflectance contrast measurements, we experimentally investigate interlayer Fermi polarons for 2s excitons in WSe$_2$/graphene heterostructures, where the excited exciton states (2s) in the WSe$_2$ layer are dressed by free charge carriers of the adjacent graphene layer in the Landau quantization regime. First, such a system enables an optical detection of integer and fractional quantum Hall states (e.g. $ν=\pm1/3$, $\pm$2/3) of monolayer graphene. Furthermore, we observe that the 2s state evolves into two distinct branches, denoted as attractive and repulsive polarons, when graphene is doped out of the incompressible quantum Hall gaps. Our work paves the way for the understanding of the excited composite quasiparticles and Bose-Fermi mixtures.

cond-mat.mes-hall

Local distortion driven magnetic phase switching in pyrochlore $Yb_2(Ti_{1-x}Sn_x)_2O_7$

While it is commonly accepted that the disorder induced by magnetic ion doping in quantum magnets usually generates a rugged free-energy landscape resulting in slow or glassy spin dynamics, the disorder/distortion effects associated with non-magnetic ion sites doping are still illusive. Here, using AC susceptibility measurements, we show that the mixture of Sn/Ti on the non-magnetic ion sites of pyrochlore $Yb_2(Ti_{1-x}Sn_x)_2O_7$ induces an antiferromagnetic ground state despite both parent compounds, $Yb_2Ti_2O_7$, and $Yb_2Sn_2O_7$, order ferromagnetically. Local structure studies through neutron total scattering reveals the local distortion in the non-magnetic ion sites and its strong correlation with the magnetic phase switching. Our study, for the first time, demonstrates the local distortion as induced by the non-magnetic ion site mixture could be a new path to achieve magnetic phase switching, which has been traditionally obtained by external stimuli such as temperature, magnetic field, pressure, strain, light, etc.

cond-mat.str-el

Gate-tunable multiband transport in ZrTe5 thin devices

Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial, for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method under inert environment, we successfully obtain high-quality ZrTe5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron-hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Our work helps to resolve the long-standing puzzles on ZrTe5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.

cond-mat.mes-hall

Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4

Half-metals are ferromagnets hosting spin-polarized conducting carriers and crucial for spintronics applications. The chromium spinel HgCr2Se4 represents a unique type of half-metal, which features a half-metal to semiconductor transition (HMST) and exhibits colossal magnetoresistance (CMR) across the ferromagnetic-paramagnetic (FM-PM) transition. Using angle-resolved photoemission spectroscopy (ARPES), we find that the Fermi surface of n-type HgCr2Se4 (n-HgCr2Se4) consists of a single electron pocket which moves above the Fermi level (EF) upon the FM-PM transition, leading to the HMST. Such a Lifshitz transition manifests a giant band splitting which originates from the exchange interaction unveiled with a specific chemical nonstoichiometry. The exchange band splitting and the chemical nonstoichiometry are two key ingredients to the HMST and CMR, consistent with our ab-initio calculation. Our findings provide spectroscopic evidences of the electronic origin of the anomalous properties of HgCr2Se4, which address the unique phase transition in half-metals.

cond-mat.mtrl-sci

Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators

The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it remains unexplored how the magnetotransport properties are modified by the high-order quantum corrections in the electron systems of symplectic symmetry class, which include topological insulators (TIs), Weyl semimetals, graphene with negligible intervalley scattering, and semiconductors with strong SOC. Here, we extend the theory of quantum conductance corrections to two-dimensional electron systems with the symplectic symmetry, and study experimentally such physics with dual-gated TI devices in which the transport is dominated by highly tunable surface states. We find that the MC can be enhanced significantly by the second-order interference and the EEI effects, in contrast to suppression of MC for the systems with orthogonal symmetry. Our work reveals that detailed MC analysis can provide deep insights into the complex electronic processes in TIs, such as the screening and dephasing effects of localized charge puddles, as well as the related particle-hole asymmetry.

cond-mat.mes-hall

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6

All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctions have been fabricated via mechanical exfoliation and stacking, and their magnetotransport properties are studied in detail. At low bias voltages large negative junction magnetoresistances have been observed and are attributed to spin-conserving tunneling transport across the insulating Cr2Ge2Te6 layer. With increasing bias, a crossover to Fowler-Nordheim tunneling takes place. The negative sign of the tunneling magnetoresistance (TMR) suggests that the bottom of conduction band in Cr2Ge2Te6 belongs to minority spins, opposite to the findings of some first-principles calculations. This work shows that the vdW heterostructures based on 2D magnetic insulators are a valuable platform to gain further insight into spin polarized tunneling transport, which is the basis for pursuing high performance spintronic devices and a large variety of quantum phenomena.

cond-mat.mtrl-sci

Engineered Kondo screening and nonzero Berry phase in SrTiO3/LaTiO3/SrTiO3 heterostructures

Controlling the interplay between localized spins and itinerant electrons at the oxide interfaces can lead to exotic magnetic states. Here we devise SrTiO3/LaTiO3/SrTiO3 heterostructures with varied thickness of the LaTiO3 layer (n monolayers) to investigate the magnetic interactions in the two-dimensional electron gas system. The heterostructures exhibit significant Kondo effect when the LaTiO3 layer is rather thin (n = 2, 10), manifesting the strong interaction between the itinerant electrons and the localized magnetic moments at the interfaces, while the Kondo effect is greatly inhibited when n = 20. Notably, distinct Shubnikov-de Haas oscillations are observed and a nonzero Berry phase of π is extracted when the LaTiO3 layer is rather thin (n = 2, 10), which is absent in the heterostructure with thicker LaTiO3 layer (n = 20). The observed phenomena are consistently interpreted as a result of sub-band splitting and symmetry breaking due to the interplay between the interfacial Rashba spin-orbit coupling and the magnetic orderings in the heterostructures. Our findings provide a route for exploring and manipulating nontrivial electronic band structures at complex oxide interfaces.

cond-mat.str-el

Pomeranchuk Effect and Tunable Quantum Phase Transitions in 3L-MoTe2/WSe2

Many sought-after exotic states of matter are known to emerge close to quantum phase transitions, such as quantum spin liquids (QSL) and unconventional superconductivity. It is thus desirable to experimentally explore systems that can be continuously tuned across these transitions. Here, we demonstrate such tunability and the electronic correlation effects in triangular moiré superlattices formed between trilayer MoTe$_2$ and monolayer WSe$_2$ (3L-MoTe$_2$/WSe$_2$). Through electric transport measurements, we firmly establish the Pomeranchuk effect observed at half filling of the first moiré subband, where increasing temperature paradoxically enhances charge localization. The system simultaneously exhibits the characteristic of a Fermi liquid with strongly renormalized effective mass, suggesting a correlated metal state. The state is highly susceptible to out-of-plane electric and magnetic fields, which induce a Lifshitz transition and a metal-insulator transition (MIT), respectively. It enables identification of a tricritical point in the quantum phase diagram at the base temperature. We explain the Lifshitz transition in terms of interlayer charge transfer by applying the vertical electric field, which leads to the emergence of a new Fermi surface and immediate suppression of the Pomeranchuk effect. The existence of quantum criticality in the magnetic filed induced MIT is supported by scaling behaviors of the resistance. Our work shows the 3L-MoTe$_2$/WSe$_2$ lies in the vicinity to the MIT point of the triangular lattice Hubbard model, rendering it a unique system to manifest the rich correlation effects at an intermediate interaction strength.

cond-mat.str-el

Large Andreev bound state zero bias peaks in a weakly dissipative environment

We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs using a weakly dissipative lead reveals non-Fermi liquid temperature (T) dependence due to environmental Coulomb blockade (ECB), an interaction effect from the lead acting on the nanowire junction. By increasing T, these large ZBPs either show a height increase or a transition from split peaks to a ZBP, both deviate significantly from non-dissipative devices where a Fermi-liquid T dependence is revealed. Our result demonstrates the competing effect between ECB and thermal broadening on Andreev bound states.

cond-mat.mes-hall

Probing the magnetic polaron state in the ferromagnetic semiconductor HgCr$_2$Se$_4$ with resistance fluctuation and muon-spin spectroscopy measurements

Combined resistance noise and muon-spin relaxation ($μ$SR) measurements of the ferromagnetic semiconductor HgCr$_2$Se$_4$ suggest a degree of magnetoelectric coupling and provide evidence for the existence of isolated magnetic polarons. These form at elevated temperatures and undergo a percolation transition with a drastic enhancement of the low-frequency 1/$f$-type charge fluctuations at the insulator-to-metal transition at $\sim 95 - 98$ K in the vicinity of the magnetic ordering temperature $T_C \sim 105 - 107$ K. Upon approaching the percolation threshold from above, the strikingly unusual dynamics of a distinct two-level fluctuator superimposed on the $1/f$ noise can be described by a slowing down of the dynamics of a nanoscale magnetic cluster, a magnetic polaron, when taking into account an effective radius of the polaron depending on the spin correlation length. Coinciding temperature scales found in $μ$SR and noise measurements suggest changes in the magnetic dynamics over a wide range of frequencies and are consistent with the existence of large polarized and domain-wall-like regions at low temperatures, that result from the freezing of spin dynamics at the magnetic polaron percolation transition.

cond-mat.str-el

Influence of Device Geometry on Transport Properties of Topological Insulator Microflakes

In the transport studies of topological insulators, microflakes exfoliated from bulk single crystals are often used because of the convenience in sample preparation and the accessibility to high carrier mobilities. Here, based on finite element analysis, we show that for the non-Hall-bar shaped topological insulator samples, the measured four-point resistances can be substantially modified by the sample geometry, bulk and surface resistivities, and magnetic field. Geometry correction factors must be introduced for accurately converting the four-point resistances to the longitudinal resistivity and Hall resistivity. The magnetic field dependence of inhomogeneous current density distribution can lead to pronounced positive magnetoresistance and nonlinear Hall effect that would not exist in the samples of ideal Hall bar geometry.

cond-mat.mes-hall

On the anomalous low-resistance state and exceptional Hall component in hard-magnetic Weyl nanoflakes

Magnetic topological materials, which combine magnetism and topology, are expected to host emerging topological states and exotic quantum phenomena. In this study, with the aid of greatly enhanced coercive fields in high-quality nanoflakes of the magnetic Weyl semimetal Co3Sn2S2, we investigate anomalous electronic transport properties that are difficult to reveal in bulk Co3Sn2S2 or other magnetic materials. When the magnetization is antiparallel to the applied magnetic field, the low longitudinal resistance state occurs, which is in sharp contrast to the high resistance state for the parallel case. Meanwhile, an exceptional Hall component that can be up to three times larger than conventional anomalous Hall resistivity is also observed for transverse transport. These anomalous transport behaviors can be further understood by considering nonlinear magnetic textures and the chiral magnetic field associated with Weyl fermions, extending the longitudinal and transverse transport physics and providing novel degrees of freedom in the spintronic applications of emerging topological magnets.

cond-mat.mtrl-sci

Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 e2/h at temperature of 1.6 K and magnetic field of 5 T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.

cond-mat.mes-hall

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed.

cond-mat.mtrl-sci