arXiv subjects

Yoshihiko Takano

Publications and source records attributed to Yoshihiko Takano.

At least 91 records · Page 5Linked to original sources

arXiv2018

Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms

Ce(O,F)Sb(S,Se)2 single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1-2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)2 crystallizes in a monoclinic space group, P21/m, with lattice parameters of a = 4.121(7) A, b = 4.109(7) A, c = 13.233(15) A, beta = 97.94(7) deg. It is composed of alternate stacking of Ce-(O,F) and Sb-SSe layers, and the Sb-SSe layer includes selective occupation of Se atoms in its in-plane site. The valence state of Ce is estimated to be Ce3+ by X-ray absorption fine spectroscopy analysis. The single crystals show an insulating behavior, and a magnetic ordering around 6 K.

cond-mat.supr-con↗

arXiv2018

Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile upon cooling, however, because of the large difference between the thermal expansion coefficients of frozen ionic liquids and solid target materials. In this paper, we provide a practical technique for setting up ionic-liquid-gated field-effect transistors for low-temperature measurements. It allows stable measurements and reduces the electronic inhomogeneity by reducing the shear strain generated in frozen ionic liquid.

cond-mat.mtrl-sci↗

arXiv2018

Pressure-induced Insulator to Metal Transition of Mixed Valence Compound Ce(O,F)SbS$_{2}$

Transport properties of Ce$_{0.85}$F0.15SbS$_{2}$ and undoped CeOSbS$_{2}$ under high pressure were investigated experimentally and theoretically. Electrical resistivity measurements of the Ce$_{0.85}$F0.15SbS$_{2}$ single crystals were performed under various high pressures using a diamond anvil cell with boron-doped diamond electrodes. The samples showed the insulator to metal transition by applying high pressure up to 30-40 GPa. On the other hand, the undoped CeOSbS$_{2}$ showed almost same transport property with the F-doped sample under high pressure. The valence state analysis using X-ray photoelectron spectroscopy revealed a simple valence state of Ce3+ in Ce$_{0.85}$F0.15SbS$_{2}$ and mixed valence state between Ce3+ and Ce4+ in undoped CeOSbS$_{2}$. The valence fluctuation in Ce carried out the comparable transport nature in the both samples. A band calculation suggests that the undoped CeOSbS$_{2}$ could be metallic under high pressure of 30 GPa in accordance with the experimental results. A superior thermoelectric property of power factor in CeOSbS$_{2}$ was estimated under high pressure around 20 GPa in comparison with that of ambient pressure.

cond-mat.mtrl-sci↗

arXiv2018

Single Crystal Growth of Cuprate Superconductor (Lu$_{0.8}$Nd$_{0.2}$)Ba$_2$Cu$_4$O$_8$ by KOH Flux Method

Single crystals of Nd-substituted LuBa$_2$Cu$_4$O$_8$ were successfully grown by the KOH flux method. The single phase of Lu$_{1-x}$Nd$_x$Ba$_2$Cu$_4$O$_8$ [(Lu,Nd)124] formed at $x = 0.2$. The compound crystallized as orthorhombic Ammm structure with lattice constants of a = 3.835(3) Å, b = 3.879(2) Å and c = 27.195(6) Å. Single crystal structural analysis demonstrated that the Nd ion partially occupied the Lu site. The (Lu,Nd)124 exhibited the superconducting transition at ~75 K in the magnetic susceptibility and resistivity. The $T_c$ and the c-axis of the (Lu,Nd)124 corresponded to Tm124. These results indicate that RE124 equivalent to the one composed of single RE element is obtained by combination of two RE elements.

cond-mat.supr-con↗

arXiv2018

Universal scaling behavior of the upper critical field in strained FeSe0.7Te0.3 thin films

Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field Hc2 at the superconducting transition temperature Tc (i.e. -dHc2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes Tc in a broad range, while the composition and disorder are almost unchanged. We show that -dHc2/dT scales linearly with Tc, indicating that FeSe0.7Te0.3 follows the same universal behavior as observed for pnictide FBS. The observed behavior is consistent with a multiband superconductivity paired by interband interaction such as sign change s+- superconductivity.

cond-mat.supr-con↗

arXiv2018

Data-driven Exploration of New Pressure-induced Superconductivity in PbBi$_2$Te$_4$ with Two Transition Temperatures

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by the high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on PbBi$_2$Te$_4$ which has the similar electronic band structure and the same crystal structure with those of a pressure-induced superconductor SnBi2Se4 explored by the same data-driven approach. The PbBi$_2$Te$_4$ was successfully synthesized as single crystals using a melt and slow cooling method. The core level X-ray photoelectron spectroscopy analysis revealed Pb2+, Bi3+ and Te2- valence states in PbBi$_2$Te$_4$. The thermoelectric properties of the PbBi$_2$Te$_4$ sample were measured at ambient pressure and the electrical resistivity was also evaluated under high pressure using a diamond anvil cell with boron-doped diamond electrodes. The resistivity decreased with increase of the pressure, and two pressure-induced superconducting transitions were discovered at 3.4 K under 13.3 GPa and at 8.4 K under 21.7 GPa. The data-driven approach shows promising power to accelerate the discovery of new thermoelectric and superconducting materials.

cond-mat.supr-con↗

arXiv2018

Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.

cond-mat.supr-con↗

arXiv2018

Two Pressure-induced Superconducting Transitions in SnBi$_2$Se$_4$ Explored by Data-driven Materials Search: New Approach to Develop Novel Functional Materials Including Thermoelectric and Superconducting Materials

Candidates for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were searched by the high-throughput first-principles calculation from an inorganic materials database. The synthesized SnBi$_2$Se$_4$ among the target compounds showed a narrow band gap of 354 meV, and a thermal conductivity of 1 W/Km at ambient pressure. The sample SnBi$_2$Se$_4$ showed a metal-insulator transition at 11.1 GPa, as predicted by a theoretical estimation. Furthermore, the two pressure-induced superconducting transitions were discovered at under 20.2 GPa and 47.3 GPa. The data-driven search is a promising approach to discover new functional materials.

cond-mat.supr-con↗

arXiv2018

Lithography-free control of the position of single walled carbon nanotubes on a substrate by focused ion beam induced deposition of catalyst and chemical vapor deposition

We introduce a novel nanofabrication technique to directly deposit catalyst pads for the chemical vapor deposition synthesis of single-walled carbon nanotubes (SWCNTs) at any desired position on a substrate by Gallium focused ion beam (FIB) induced deposition of silicon oxide thin films from the metalorganic Tetraethyl orthosilicate (TEOS) precursor. A high resolution in the positioning of the SWCNTs is naturally achieved as the imaging and deposition by FIB are conducted concurrently in situ at the same selected point on the substrate. This technique has substantial advantages over the current state-of-the-art methods that are based on complex and multistep lithography processes.

physics.app-ph↗

arXiv2018

Diamond anvil cell using boron-doped diamond electrodes covered with undoped diamond insulating layer

Diamond anvil cell using boron-doped metallic diamond electrodes covered with undoped diamond insulating layer have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of high quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of FeSe single crystal was enhanced up to 43 K by applying uniaxial-like pressure.

cond-mat.supr-con↗

arXiv2017

Observation of Zero Resistance in As-Electrodeposited FeSe

Superconducting FeSe films were electrochemically deposited on rolling-assisted biaxially textured substrate (RABiTS) tape. We observed zero resistivity in the as-electrodeposited FeSe film prepared on the RABiTS when the appropriate voltage was applied while it was dipped into the solution. When the RABiTS tape was dipped in the solution without applying voltage, a thin Se film was deposited on the substrate. The compositional ratio of the FeSe film got closer to the stoichiometric ratio with decreasing the dipping time before applying voltage.

cond-mat.supr-con↗

arXiv2017

Electronic Transport Properties of Carrier Controlled SnSe Single Crystals

We found that the electronic transport property of SnSe single crystals was sensitive to oxygen content. Semiconducting SnSe single crystals were obtained by using Sn of grain form as a starting material while powder Sn resulted in metallic SnSe. X-ray photoelectron spectroscopy analysis revealed that the surfaces of raw Sn were oxidized, where the volume fraction was relatively low in grain Sn. This demonstrates that contamination of oxygen causes metallic behavior in grown SnSe single crystals.

cond-mat.mtrl-sci↗

arXiv2017

Quenching Dependence on Superconductivity in the Synthesizing Process of Single Crystals of Rb$_x$Fe$_{2-y}$Se$_2$

Superconducting single crystals of Rb-intercalated FeSe compounds Rb$_x$Fe$_{2-y}$Se$_2$ were prepared by using a starting material of Rb$_2$Se as a Rb source. The superconducting properties and the surface microstructures were systematically controlled by varying the cooling rate in the quenching process. The higher cooling rate in the sample provided a higher superconducting transition temperature with highly connected superconducting mesh-like surface structure. Extremely slow-cooling process led to the complete isolation between the superconducting domains.

cond-mat.supr-con↗

arXiv2017

Superconductivity and its Enhancement under High Pressure in "F-free" Single Crystals of CeOBiS$_2$

"F-free" CeOBiS$_2$ single crystals have successfully grown, thoroughly eliminating a concern about F-contamination by using a high-purity CsCl flux. The obtained crystals have a plate-like shape with a size of 1.0-3.0 mm in the well-developed plane. Single crystal X-ray structural analysis clearly revealed that the CeOBiS$_2$ crystallizes with a space group $P4/nmm$ (with lattice parameters of $a$ = 4.0189(6) Å, $c$ = 13.573(2) Å). The bond valence sum estimation and X-ray photoelectron spectroscopy analysis showed that the chemical state of Ce was in the mixed valence of Ce$^{3+}$ and Ce$^{4+}$. The single crystals show superconductivity with zero resistivity at $\sim$1.3 K. This is the first conclusive evidence of superconductivity driven by Ce valence fluctuation in surely non-doped CeOBiS$_2$. The superconducting transition temperature was enhanced up to $\sim$3.8 K by applying hydrostatic pressure.

cond-mat.supr-con↗

arXiv2017

The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films

Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.

cond-mat.supr-con↗

arXiv2017

Growth and superconducting properties of Cd-doped La(O,F)BiS2 single crystals

Cd-doped La(O,F)BiS2 single crystals were grown using a CsCl/KCl flux. The grown crystals have a plate-like shape with ~1-2 mm square size in a well-developed ab-plane. The Cd doping in the crystals was successfully characterized by single crystal X-ray diffraction and electron probe microanalysis techniques. The superconductivity of La(O,F)BiS2 was gradually suppressed with Cd doping. The superconducting transition temperature with zero resistivity of La(O0.54F0.46)(Bi0.92Cd0.08)S2 was 2.3 K. The Cd doping does not change the superconducting anisotropy so much, albeit the considerable suppression of Tc.

cond-mat.supr-con↗

arXiv2017

Phase Diagram of FeSe Deposited by Electrochemical Technique with Different Temperature and Voltage

High-quality crystalline FeSe is successfully synthesized in 5 minutes by an electrochemical deposition technique via increasing the solution temperature. The synthesis of FeSe have been controlled by the applied voltage, synthesis time and pH value. The obtained samples were summarized as a phase diagram at each temperature and applied voltage. The best synthesis temperature to produce high-quality crystalline samples was found to be 70°C.

cond-mat.supr-con↗

arXiv2017

Unconventional superconductivity in the BiS$_2$-based layered superconductor NdO$_{0.71}$F$_{0.29}$BiS$_2$

We investigate the superconducting-gap anisotropy in one of the recently discovered BiS$_2$-based superconductors, NdO$_{0.71}$F$_{0.29}$BiS$_2$ ($T_c$ $\sim$ 5 K), using laser-based angle-resolved photoemission spectroscopy. Whereas the previously discovered high-$T_c$ superconductors such as copper oxides and iron-based superconductors, which are believed to have unconventional superconducting mechanisms, have $3d$ electrons in their conduction bands, the conduction band of BiS$_2$-based superconductors mainly consists of Bi 6$p$ electrons, and hence the conventional superconducting mechanism might be expected. Contrary to this expectation, we observe a strongly anisotropic superconducting gap. This result strongly suggests that the pairing mechanism for NdO$_{0.71}$F$_{0.29}$BiS$_2$ is unconventional one and we attribute the observed anisotropy to competitive or cooperative multiple paring interactions.

cond-mat.supr-con↗