arXiv subjects

Yoshihiro Iwasa

Publications and source records attributed to Yoshihiro Iwasa.

48 records · Page 3Linked to original sources

arXiv2015

Modulation of ferromagnetism in (In,Fe)As quantum wells via electrically controlled deformation of the electron wavefunctions

We demonstrate electrical control of ferromagnetism in field-effect transistors with a trilayer quantum well (QW) channel containing an ultrathin n-type ferromagnetic semiconductor (In,Fe)As layer. A gate voltage is applied to control the electron wavefunctions ϕi in the QW, such that the overlap of ϕi and the (In,Fe)As layer is modified. The Curie temperature is largely changed by 42%, whereas the change in sheet carrier concentration is 2 - 3 orders of magnitude smaller than that of previous gating experiments. This result provides a new approach for versatile, low power, and ultrafast manipulation of magnetization.

cond-mat.mtrl-sci↗

arXiv2015

Two-Dimensional Valley Electrons and Excitons in Noncentrosymmetric 3R MoS$_{2}$

We find that the motion of the valley electrons -- electronic states close to the ${\rm K}$ and ${\rm K'}$ points of the Brillouin zone -- is confined into two dimension when the layers of MoS$_{2}$ follow the 3R stacking, while in the 2H polytype the bands have dispersion in all the three dimensions. According to our first-principles band structure calculations, the valley states have no interlayer hopping in 3R-MoS$_{2}$, which is proved to be the consequence of the rotational symmetry of the Bloch functions. By measuring the reflectivity spectra and analyzing an anisotropic hydrogen atomic model, we confirm that the valley excitons in 3R-MoS$_{2}$ have two-dimensional hydrogen-like spectral series, and the spreads of the wave function are smaller than the interlayer distance. In contrast, the valley excitons in 2H-MoS$_{2}$ are well described by the three-dimensional model and thus not confined in a single layer. Our results indicate that the dimensionality of the valley degree of freedom can be controlled simply by the stacking geometry, which can be utilized in future valleytronics.

cond-mat.mtrl-sci↗

arXiv2015

Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors

Electrostatic modification of functional materials by electrolytic gating has demonstrated a remarkably wide range of density modulation, a condition crucial for developing novel electronic phases in systems ranging from complex oxides to layered chalcogenides. Yet little is known microscopically when carriers are modulated in electrolyte-gated electric double-layer transistors (EDLTs) due to the technical challenge of imaging the buried electrolyte-semiconductor interface. Here, we demonstrate the real-space mapping of the channel conductance in ZnO EDLTs using a cryogenic microwave impedance microscope. A spin-coated ionic gel layer with typical thicknesses below 50 nm allows us to perform high resolution (on the order of 100 nm) sub-surface imaging, while maintaining the capability of inducing the metal-insulator transition under a gate bias. The microwave images vividly show the spatial evolution of channel conductance and its local fluctuations through the transition, as well as the uneven conductance distribution established by a large source-drain bias. The unique combination of ultra-thin ion-gel gating and microwave imaging offers a new opportunity to study the local transport and mesoscopic electronic properties in EDLTs.

cond-mat.mes-hall↗

arXiv2015

Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was determined as = 0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ~ 190 cm^2/Vs at 170 K, which is one order of magnitude larger than the electron mobility. By inducing an ultra-high carrier density of ~ 10^14 cm^-2, an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

cond-mat.mtrl-sci↗

arXiv2015

Memristive phase switching in two-dimensional crystals

Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals extending from graphene, transition metal dichalcogenides to black phosphorous. This is caused by the dramatic modification of electronic band structures. In such reduced dimensions, the electron correlation effects are also expected to be significantly changed from bulk systems. However, there are few attempts to realize novel phenomena in correlated 2D crystals. Here, we report memristive phase switching in nano-thick crystals of 1T-type tantalum disulfide (1T-TaS2), a first-order phase transition system. The ordering kinetics of the phase transition was revealed to become extremely slow as the thickness is reduced, resulting in an emergence of metastable states. Furthermore, we realized the unprecedented memristive switching to multi-step non-volatile states by applying in-plane electric field. The reduction of thickness is essential to achieve such non-volatile electrical switching behavior. The thinning-induced slow kinetics possibly makes the various metastable states robust and consequently realizes the non-volatile memory operation. The present result indicates that 2D crystal with correlated electrons is a novel nano-system to explore and functionalize multiple metastable states which are inaccessible in its bulk form.

cond-mat.mtrl-sci↗

arXiv2015

Ultrahigh Pressure Superconductivity in Molybdenum Disulfide

Superconductivity commonly appears under pressure in charge density wave (CDW)-bearing transition metal dichalcogenides (TMDs), but has emerged so far only via either intercalation with electron donors or electrostatic doping in CDW-free TMDs. Theoretical calculations have predicted that the latter should be metallized through bandgap closure under pressure, but superconductivity remained elusive in pristine 2H-MoS2 upon substantial compression, where a pressure of up to 60 GPa only evidenced the metallic state. Here we report the emergence of superconductivity in pristine 2H-MoS2 at 90 GPa. The maximum onset transition temperature Tc(onset) of 11.5 K, the highest value among TMDs and nearly constant from 120 up to 200 GPa, is well above that obtained by chemical doping but comparable to that obtained by electrostatic doping. Tc(onset) is more than an order of magnitude larger than present theoretical expectations, raising questions on either the current calculation methodologies or the mechanism of the pressure-induced pairing state. Our findings strongly suggest further experimental and theoretical efforts directed toward the study of the pressure-induced superconductivity in all CDW-free TMDs.

cond-mat.supr-con↗

arXiv2014

Strong Suppression of Coherence Effect and Appearance of Pseudogap in Layered Nitride Superconductor Li_xZrNCl: ^91Zr- and ^15N- NMR Studies

We present NMR measurements of the layered nitride superconductor Li_xZrNCl. The nuclear spin-lattice relaxation rate, 1/T_1, shows that the coherence peak is strongly suppressed in Li_xZrNCl in contrast to conventional BCS superconductors. In the lightly-doped region close to the insulating state, the system shows a gap-like behavior, i.e., pseudogap, that is characterized by a reduction in the magnitude of the Knight shift and 1/T_1T. A higher superconducting (SC) transition temperature, T_c, is achieved by coexisting with the pseudogap state. These unusual behaviors, which deviate from the ordinary BCS framework, are the key ingredients to understanding the SC mechanism of Li_xZrNCl.

cond-mat.supr-con↗

arXiv2013

Large-Area Aiming Synthesis of WSe2 Monolayers

The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics and optoelectronic devices. Recent reports have demonstrated the growth of large-size 2-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown.

cond-mat.mtrl-sci↗

arXiv2013

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

cond-mat.supr-con↗

arXiv2013

Electron carrier-mediated room temperature ferromagnetism in anatase (Ti,Co)O2

Since the discovery of room temperature ferromagnetism in (Ti,Co)O2, the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not the ferromagnetic exchange interaction is mediated by charge carriers like (Ga,Mn)As. Recent two studies on the control of ferromagnetism in anatase (Ti,Co)O2 at room temperature via electric field effect [Y. Yamada et al., Science 332, 1065 (2011)] and chemical doping [Y. Yamada et al., Appl. Phys. Lett. 99, 242502 (2011)] indicate a principal role of electrons in the carrier-mediated exchange interaction. In this article, the authors review fundamental properties of anatase (Ti,Co)O2 and discuss the carrier mediated ferromagnetism.

cond-mat.mtrl-sci↗

arXiv2010

Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors

In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, nS, of 1014 cm-2, the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. nS reached 1015 cm-2 at 5 V, and the electron mobility at 2 K was as large as 104 cm2/Vs. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3.

cond-mat.str-el↗

arXiv1999

Magnetic resonance in the antiferromagnetic and normal state of NH_3K_3C_60

We report on the magnetic resonance of NH_3K_3C_60 powders in the frequency range of 9 to 225 GHz. The observation of an antiferromagnetic resonance below the phase transition at 40 K is evidence for an antiferromagnetically ordered ground state. In the normal state, above 40 K, the temperature dependence of the spin-susceptibilty measured by ESR agrees with previous static measurements and is too weak to be explained by interacting localized spins in an insulator. The magnetic resonance line width has an unusual magnetic-field dependence which is large and temperature independent in the magnetically ordered state and decreases rapidly above the transition. These observations agree with the suggestion that NH_3K_3C_60 is a metal in the normal state and undergoes a Mott-Hubbard metal to insulator transition at 40 K.

cond-mat.str-el↗