arXiv subjects

Yoshihisa Harada

Publications and source records attributed to Yoshihisa Harada.

7 recordsLinked to original sources

arXiv2020

Localized character of charge excitations for La$_{2-x}$Sr$_{x}$NiO$_{4+δ}$ revealed by oxygen $K$-edge resonant inelastic X-ray scattering

We performed a resonant inelastic X-ray scattering (RIXS) study of La$_{2-x}$Sr$_{x}$NiO$_{4+δ}$ (LSNO) at the oxygen $K$ edge to investigate the nature of the doped holes with regard to charge excitations. Charge excitations of the hole-doped nickelates are found to be almost independent of momentum transfer, indicating that the doped holes are strongly localized in character. Additionally, conspicuous changes in energy position are in temperature dependence. These characters are observed in stark contrast to those of the high-$T_{c}$ cuprate La$_{2-x}$Sr$_{x}$CuO$_{4}$ (LSCO), where delocalized doped holes form charge excitations with sizable momentum dependence in the CuO$_2$ plane. This distinct nature of charge excitations of doped holes is consistent with the metallicity of the materials and could be caused by strong electron-phonon coupling and weak quantum spin fluctuation in the nickelates.

cond-mat.str-el↗

arXiv2020

Minority-Spin Impurity Band in n-Type (In,Fe)As: A Materials Perspective for Ferromagnetic Semiconductors

Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically non-trivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe-3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials.

cond-mat.mtrl-sci↗

arXiv2020

Revisiting the phase diagram of T*-type La$_{1-x/2}$Eu$_{1-x/2}$Sr$_x$CuO$_4$ using Oxygen $K$-edge X-ray absorption spectroscopy

Oxygen $K$-edge X-ray absorption spectroscopy measurements were conducted on T*-type La$_{1-x/2}$Eu$_{1-x/2}$Sr$_x$CuO$_4$ (LESCO) to estimate the hole density ($n_{\rm h}$) and investigate the oxidation annealing effect on $n_{\rm h}$. A drastic increase in $n_{\rm h}$ due to annealing was found. The increase in $n_{\rm h}$ cannot be explained solely by the oxygen gain due to annealing, suggesting that delocalized holes are introduced into the CuO$_2$ plane. A phase diagram of LESCO was redrawn against $n_{\rm h}$.

cond-mat.supr-con↗

arXiv2016

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB.

cond-mat.mtrl-sci↗

arXiv2013

Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As

(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As disputed for more than a decade. The non-dispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived impurity band is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As is the transport of hole carriers in the impurity band.

cond-mat.mtrl-sci↗

arXiv2012

Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

We report the local atomic and electronic structure of a nitrogen-doped graphite surface by scanning tunnelling microscopy, scanning tunnelling spectroscopy, X-ray photoelectron spectroscopy, and first-principles calculations. The nitrogen-doped graphite was prepared by nitrogen ion bombardment followed by thermal annealing. Two types of nitrogen species were identified at the atomic level: pyridinic-N (N bonded to two C nearest neighbours) and graphitic-N (N bonded to three C nearest neighbours). Distinct electronic states of localized π states were found to appear in the occupied and unoccupied regions near the Fermi level at the carbon atoms around pyridinic-N and graphitic-N species, respectively. The origin of these states is discussed based on the experimental results and theoretical simulations.

cond-mat.mtrl-sci↗

arXiv2007

Recoil effects of photoelectrons in a solid

High energy resolution C 1$s$ photoelectron spectra of graphite were measured at the excitation energy of 340, 870, 5950 and 7940eV using synchrotron radiation. On increasing the excitation energy, i.e., increasing kinetic energy of the photoelectron, the bulk origin C 1$s$ peak position shifts to higher binding energies. This systematic shift is due to the kinetic energy loss of the high-energy photoelectron by kicking the atom, and is clear evidence of the recoil effect in photoelectron emission. It is also observed that the asymmetric broadening increases for the higher energy photoelectrons. All these recoil effects can be quantified in the same manner as the Mössbauer effect for $γ$-ray emission from nuclei embedded in crystals.

cond-mat.other↗