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Yoshio Miura

Publications and source records attributed to Yoshio Miura.

At least 19 recordsLinked to original sources

Magnetostrictive properties in Fe$_{4-x}$Co$_{x}$N films: Insight from experiments and first-principles calculations

The ferromagnetic nitride Fe$_{4}$N has attracted attention for application in spintronic devices due to its high spin polarization and large magnetostriction. We present a combined experimental and theoretical study on the magnetostriction of Fe$_{4-x}$Co$_{x}$N films across a wide composition range. The Fe$_{4-x}$Co$_{x}$N films were grown on SrTiO$_{3}$(001) substrates using molecular beam epitaxy, and the magnetostriction constants along the [100] direction ($λ$$_{100}$) and [111] direction ($λ$$_{111}$) were precisely evaluated using an optical cantilever method. The experimental results reveal that $λ$$_{111}$ remains positive in the whole composition range and shows a maximum value of +82 ppm around x = 0.9. The variation in $λ$$_{111}$ with x is much smaller than that in $λ$$_{100}$, for which giant tunability and sign reversal are observed. First-principles calculations show reasonable agreement with the experimental $λ$$_{111}$ for x ${\ge}$ 1.6, but give negative values at lower x, and an exceptionally large negative $λ$$_{111}$ is obtained at x = 0.8, where the Fermi level coincides with a pronounced minority-spin peak in the density of states. The calculated $λ$$_{111}$ depends strongly on the smearing parameter, indicating that the rhombohedral magnetostriction is highly sensitive to the treatment of atomic disorder. The saturation magnetostriction constant ($λ$$_{s}$) derived from $λ$$_{100}$ and $λ$$_{111}$ is also compared with the $λ$$_{s}$ measured for the (001)-oriented polycrystalline Fe$_{4-x}$Co$_{x}$N films, and a possible scenario for deviation between them is discussed. Our findings clarify the basic features of magnetostriction in the Fe$_{4-x}$Co$_{x}$N system, providing essential magnetoelastic parameters for designing nitride-based spintronic devices.

cond-mat.mtrl-sci↗

Exchange splitting as a descriptor for giant anomalous Hall and Nernst effects in ferromagnets

The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE), which describe transverse electrical and thermoelectric responses in magnetic materials, respectively, are promising for spintronic and energy-harvesting applications. Here, we employ high-throughput first-principles calculations to investigate 2251 chemically substituted tetragonal $L1_0$ alloys. Among ferromagnets, enhanced responses emerge preferentially in alloys derived from parent compounds with small exchange splitting: no alloy derived from FePt, the archetypal $L1_0$ ferromagnet, reaches the high-response regime, whereas NiPt- and CoIr-derived alloys occupy it in large numbers. Small exchange splitting keeps majority- and minority-spin bands near the Fermi level, giving chemical substitution more opportunity to modify near-Fermi-level band crossings and amplify the Berry curvature. We predict a giant anomalous Hall conductivity of $2809\,\mathrm{S\,cm^{-1}}$ in (Co$_{0.8}$Fe$_{0.2}$)(Ir$_{0.7}$Pt$_{0.3}$) and a giant anomalous Nernst conductivity of $7.72\,\mathrm{A\,m^{-1}\,K^{-1}}$ in (Ni$_{0.8}$Co$_{0.2}$)(Pt$_{0.7}$Ir$_{0.3}$). Our results identify the exchange splitting of the parent compound as a descriptor for chemical tunability toward giant Berry-curvature-driven transport responses.

cond-mat.mtrl-sci↗

Nitrospinics as a platform from orbital-torque memory to artificial intelligence

The exploration of energy-efficient and functional spintronics has attracted considerable attention. Orbital transport has opened new pathways for current-induced torque generation beyond the conventional spin transport based on the spin Hall effect. In addition, artificial intelligence computing has been demonstrated using spintronic devices. Further progress of these devices can be anticipated through the development of unique and functional materials beyond the existing heavy metals and topological systems with strong spin-orbit coupling. The nitride materials exhibit unique chemical, magnetic, and structural versatility, including antiferromagnetism, high thermal stability, and compatibility with diverse device architectures. Here, we propose Nitrospinics as a conceptual and functional framework that exploits nitride materials for applications ranging from orbital-torque-based spintronic devices to artificial intelligence hardware. Using Cr2N, a two-dimensional nitride MXene with an atomic layered structure, as a prototype system, we discuss how nitrogen contributes to the structural stability, the orbital torque generation, and the interfacial orbital and spin conversion. We further outline key challenges and opportunities toward establishing nitride-based materials for next-generation computing technologies.

cond-mat.mtrl-sci↗

Influence of strain on the anomalous Hall and Nernst effects in Fe thin films

The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are the transverse transport phenomena in magnetic materials, which reflect the Berry curvature arising from the electronic structure near the Fermi level. Lattice strain provides a direct means to tune these effects by modifying the electronic structure; however, disentangling the strain-induced effect through the Berry curvature modulations in multicomponent materials is challenging due to complexities arising from extrinsic contributions by impurities and disorder, as well as difficulties in simple direct comparison with first-principles calculations. In this study, we focus on Fe, a prototypical single element ferromagnet with a well-established electronic structure, and tune the sign and magnitude of the strain in epitaxial thin films of by varying the substrates and deposition conditions to investigate the strain effect on the AHE and ANE. Scaling law analysis revealed that the intrinsic anomalous Hall conductivity (AHC) exhibits a clear tetragonal distortion (c/a) dependence, in good agreement with theoretical calculations based on Berry curvature modification. In contrast, the anomalous Nernst conductivity (ANC) shows a pronounced deviation from the theoretical values and markedly different c/a dependence. These results demonstrate a crucial difference in the physical origin between the AHC and the ANC in the Fe films; the AHC is predominantly governed by intrinsic mechanisms, whereas the ANC is strongly influenced by the extrinsic contribution.

cond-mat.mtrl-sci↗

Efficient magnetization switching driven by orbital torque originating from light 3d-transition-metal nitrides

The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy metals. We demonstrate perpendicular magnetization switching in [Co/Pt]3 multilayers driven by the OHE in a light 3d transition metal nitride, VN, with 111-texture of face-center cubic structure. Second harmonic Hall measurement reveals a large torque efficiency of -0.41 in the VN(7.5 nm)/[Co(0.35nm)/Pt(0.3 nm)]3, which significantly surpasses that in the control samples with Co, Py, and CoFeB ferromagnets, suggesting strong conversion of orbital current originating from VN to spin current by [Co/Pt]3 ferromagnet. Full switching by in-plane current is achieved with an in-plane magnetic field, while partial field-free switching occurs without it. The critical current density for the switching is found to be comparable to that of the W-based spin-orbit torque device. First-principles calculations confirm a large orbital Hall conductivity in VN, with a small spin Hall conductivity around the Fermi energy. Our results highlight the potential in the combination of light 3d transition metal nitrides and Co/Pt ferromagnetic multilayer with 111-texture to maximize the magnetization switching efficiency of orbitronic devices.

cond-mat.mtrl-sci↗

Theory of tunnel magnetoresistance in magnetic tunnel junctions with hexagonal boron nitride barriers: mechanism and application to ferromagnetic alloy electrodes

Hexagonal boron nitride ($h$-BN), with its strong in-plane bonding and good lattice match to hcp and fcc metals, offers a promising alternative barrier material for magnetic tunnel junctions (MTJs). Here, we investigate spin-dependent transport in hcp-Co$_{1-x}$Ni$_{x}$$/$$h$-BN$/$hcp-Co$_{1-x}$Ni$_{x}$(0001) MTJs with physisorption-type interfaces using first-principles calculations. We find that a high TMR ratio arises from the resonant tunneling of the down-spin surface states of the hcp-Co$_{1-x}$Ni$_{x}$, having a $Δ_1$-like symmetry around the $Γ$ point. Ni doping tunes the Fermi level and enhances this effect by reducing the overlap between up-spin and down-spin conductance channels in momentum space under the parallel configuration, thereby suppressing antiparallel conductance and increasing the TMR ratio. This mechanism is analogous to Brillouin zone spin filtering and is sensitive to the interfacial distance but not specific to $h$-BN barriers; similar behavior may emerge in MTJs with other two-dimensional insulators or semiconductors. These findings provide insight into surface-state-assisted tunneling mechanisms and offer guidance for the interface engineering of next-generation spintronic devices.

cond-mat.mtrl-sci↗

Microscopic correlation between magnetostriction and magnetic damping

Although the relationship between magnetostriction and magnetic damping is often described phenomenologically, their intrinsic connection remains unclear. In this study, we demonstrate that the magnitude of magnetic damping depends on the sign of magnetostriction in ($\mathrm{Fe_{1-x}Co_{x})_{4}N}$ and $\mathrm{Ni_{1-y}Co_{y}}$ alloys across various compositions, consistent with experimental observations. This behavior is attributed to strain-induced changes in exchange splitting, which shift the minority spin density of states near the Fermi level, thereby affecting both magnetostriction and damping through spin-conserving transitions. Additionally, the presence of locally degenerate orbitals plays a crucial role in determining magnetostriction. These findings suggest that magnetization dynamics and magnetostriction can be intrinsically controlled, facilitating the design of magnetic materials for applications such as flexible spintronics.

cond-mat.mtrl-sci↗

Control of Covalent Bond Enables Efficient Magnetic Cooling

Magnetic cooling, harnessing the temperature change in matter when exposed to a magnetic field, presents an energy-efficient and climate-friendly alternative to traditional vapor-compression refrigeration systems, with a significantly lower global warming potential. The advancement of this technology would be accelerated if irreversible losses arising from hysteresis in magnetocaloric materials were minimized. Despite extensive efforts to manipulate crystal lattice constants at the unit-cell level, mitigating hysteresis often compromises cooling performance. Herein, we address this persistent challenge by forming Sn(Ge)3/Sn(Ge)3 bonds within the unit cell of the Gd5Ge4 compound. Our approach enables an energetically favorable phase transition, leading to the elimination of thermal hysteresis. Consequently, we achieve a synergistic improvement of two key magnetocaloric figures of merit: a larger magnetic entropy change and a twofold increase in the reversible adiabatic temperature change (from 3.8 to 8 K) in the Gd5Sn2Ge2 compound. Such synergies can be extended over a wide temperature range. This study demonstrates a paradigm shift in mastering hysteresis toward simultaneously achieving exceptional magnetocaloric metrics and opens up promising avenues for gas liquefaction applications in the longstanding pursuit of sustainable energy solutions.

cond-mat.mtrl-sci↗

Evidence for single variant in altermagnetic RuO2(101) thin films

Altermagnetism presents intriguing possibilities for spintronic devices due to its unique combination of strong spin-splitting and zero net magnetization. However, realizing its full potential hinges on fabricating single-variant altermagnetic thin films. In this work, we present definitive evidence for the formation of single-variant altermagnetic RuO2(101) thin films with fully epitaxial growth on Al2O3(1-102) r-plane substrates, confirmed through rigorous structural analyses using X-ray diffraction, atomic-resolution transmission electron microscopy and X-ray magnetic linear dichroism. The mutual correspondence of the occupancy of oxygen atoms on the surfaces of RuO2(101)[010] and Al2O3(1-102)[11-20] plays a decisive role in the formation of the single-variant RuO2, which is also supported by our first-principles density functional theory calculations. We further observed spin-splitting magnetoresistance in the single-variant RuO2(101)/CoFeB bilayers, highlighting the characteristic effect of single variant on spin transport. The demonstration of single-variant RuO2(101) films marks a significant advancement in the field of altermagnetism and paves the way for exploring their potential applications.

cond-mat.mtrl-sci↗

Theory for Tunnel Magnetoresistance Oscillation

The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To explain this, we here introduce a superposition of wave functions with opposite spins and different Fermi momenta, based on the fact that spin-flip scattering near the interface provides a hybridization between majority- and minority-spin states. In a typical Fe/MgO/Fe MTJ, we solve the tunneling problem and show that the TMR ratio oscillates with a period of $\sim3\,$Å by varying the MgO thickness, consistent with previous and present experimental observations.

cond-mat.mtrl-sci↗

Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories

MXenes have attracted considerable attention in recent years owing to their two-dimensional (2D) layered structures with various functionalities similar to those of graphene and transition metal dichalcogenides. To open a new application field for MXenes in the realm of electronic devices, such as ultrahigh-integrated magnetic memory, we have developed a spin-orbit torque (SOT) bilayer structure comprising bare MXene of Cr2N: substrate//Cr2N/[Co/Pt]3/MgO using the magnetron sputtering technique. We demonstrated field-free current-induced magnetization switching (CIMS) in the bilayer structure, regardless of the charge current directions with respect to the mirror symmetry lines of Cr2N crystal. This is a specific characteristic for the 2D MXene-based SOT-devices, originating from an unconventional out-of-plane SOT. As the SOT efficiency increases with increasing the Cr2N thickness, the first-principles calculations predict an intrinsic orbital-Hall conductivity with the dominant out-of-plane component, comparing to the spin-Hall conductivity in the Cr2N. X-ray magnetic circular dichroism reveals the out-of-plane uncompensated magnetic moment of Cr in the Cr2N layer at the interface, induced by contact with the Co in the [Co/Pt]3 ferromagnetic layer. Therefore, the intrinsic bulk orbital Hall effect in MXene and the interfacial contribution such as spin-filtering-like effect owing to uncompensated magnetic moment of Cr are considered as possible major mechanisms for the unconventional out-of-plane SOT in the device, rather than a crystal symmetry and/or an interlayer exchange coupling.

cond-mat.mes-hall↗

Chemical-substitution-driven giant anomalous Hall and Nernst effects in magnetic cubic Heusler compounds

Chemical substitution efficiently optimizes the physical properties of Heusler compounds, especially their anomalous transport properties, including anomalous Hall conductivity (AHC) and anomalous Nernst conductivity (ANC). This study systematically investigates the effect of chemical substitution on AHC and ANC in 1493 magnetic cubic Heusler compounds using high-throughput first-principles calculations. Notable trends emerge in Co- and Rh-based compounds, where chemical substitution effectively enhances the AHC and ANC. Intriguingly, certain chemically substituted candidates exhibit outstanding enhancement in AHCs and ANCs, such as (Co$_{0.8}$Ni$_{0.2}$)$_2$FeSn with considerable AHC and ANC values of $-2567.78$ S cm$^{-1}$ and $8.27$ A m$^{-1}$K$^{-1}$, respectively, and (Rh$_{0.8}$Ru$_{0.2}$)$_2$MnIn with an AHC of $1950.49$ S cm$^{-1}$. In particular, an extraordinary ANC of $8.57$ A m$^{-1}$K$^{-1}$ is identified exclusively in Rh$_2$Co$_{0.7}$Fe$_{0.3}$In, nearly double the maximum value of $4.36$ A m$^{-1}$K$^{-1}$ observed in the stoichiometric Rh$_2$CoIn. A comprehensive band structure analysis underscores that the notable enhancement in ANC arises from the creation and modification of the energy-dependent nodal lines through chemical substitution. This mechanism generates a robust Berry curvature, resulting in significant ANCs. These findings emphasize the pivotal role of chemical substitution in engineering high-performance materials, thereby expanding the horizons of transport property optimization within Heusler compounds.

cond-mat.mtrl-sci↗

Giant tunability of magnetoelasticity in Fe$_4$N system: Platform for unveiling correlation between magnetostriction and magnetic damping

Flexible spintronics has opened new avenue to promising devices and applications in the field of wearable electronics. Particularly, miniaturized strain sensors exploiting the spintronic function have attracted considerable attention, in which the magnetoelasticity linking magnetism and lattice distortion is a vital property for high-sensitive detection of strain. This paper reports the demonstration that the magnetoelastic properties of Fe$_4$N can be significantly varied by partially replacing Fe with Co or Mn. The high quality Fe$_4$N film exhibits large negative magnetostriction along the [100] direction ($λ_{100}$) of -121 ppm while Fe$_{3.2}$Co$_{0.8}$N shows $λ_{100}$ of +46 ppm. This wide-range tunability of $λ_{100}$ from -121 to +46 across 0 allows us to thoroughly examine the correlation between the magnetoelasticity and other magnetic properties. The strong correlation between $λ_{100}$ and magnetic damping ($α$) is found. The enhanced extrinsic term of $α$ is attributable to the large two magnon scattering coming from the large magnetostriction. In addition, the density of states at the Fermi level plays a primal role to determine both $λ_{100}$ and the intrinsic term of $α$. Thanks to the giant tunability and the bipolarity of magnetoelasticity, magnetic nitrides are candidate materials for high-sensitive spintronic strain sensors.

cond-mat.mtrl-sci↗

First-principles prediction of phase transition of YCo$_5$ from self-consistent phonon calculations

Recent theoretical study has shown that the hexagonal YCo$_5$ is dynamically unstable and distorts into a stable orthorhombic structure. In this study, we show theoretically that the orthorhombic phase is energetically more stable than the hexagonal phase in the low-temperature region, while the phonon entropy stabilizes the hexagonal phase thermodynamically in the high-temperature region. The orthorhombic-to-hexagonal phase transition temperature is $\sim$165 K, which is determined using the self-consistent phonon calculations. We investigate the magnetocrystalline anisotropy energy (MAE) using the self-consistent and non-self-consistent (force theorem) calculations with the spin-orbit interaction (SOI) along with the Hubbard $U$ correction. Then, we find that the orthorhombic phase has similar MAE, orbital moment, and its anisotropy to the hexagonal phase when the self-consistent calculation with the SOI is performed. Since the orthorhombic phase still gives magnetic properties comparable to the experiments, the orthorhombic distortion is potentially realized in the low-temperature region, which awaits experimental exploration.

cond-mat.mtrl-sci↗

Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles calculation and the Landauer formula shows that the Co-based MTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value (290%). Since the in-plane lattice periodicity of SrTiO$_{3}$ is about twice that of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) are folded in the $k_x$-$k_y$ plane corresponding to the $ab$ plane of the MTJ supercell. We find that this band folding gives a half-metallic band structure in the $Λ_1$ state of Co (Ni) and the coherent tunneling of such a half-metallic $Λ_1$ state yields a high TMR ratio. We also reveal that the difference in the TMR ratio between the Co- and Ni-based MTJs can be understood by different $s$-orbital weights in the $Λ_1$ band at the Fermi level.

cond-mat.mtrl-sci↗

Understanding magnetocrystalline anisotropy based on orbital and quadrupole moments

Understanding magnetocrystalline anisotropy (MCA) is fundamentally important for developing novel magnetic materials. Therefore, clarifying the relationship between MCA and local physical quantities observed by spectroscopic measurements, such as the orbital and quadrupole moments, is necessary. In this review, we discuss MCA and the distortion effects in magnetic materials with transition metals (TMs) based on the orbital and quadrupole moments, which are related to the spin-conserving and spin-flip terms in the second-order perturbation calculations, respectively. We revealed that orbital moment stabilized the spin moment in the direction of the larger orbital moment, while the quadrupole moment stabilized the spin moment along the longitudinal direction of the spin-density distribution. The MCA of the magnetic materials with TMs and their interfaces can be determined from the competition between these two contributions. We showed that the perpendicular MCA of the face-centered cubic (fcc) Ni with tensile tetragonal distortion arose from the orbital moment anisotropy, whereas that of Mn-Ga alloys originated from the quadrupole moment of spin density. In contrast, in the Co/Pd(111) multilayer and Fe/MgO(001), both the orbital moment anisotropy and quadrupole moment of spin density at the interfaces contributed to the perpendicular MCA. Understanding the MCA of magnetic materials and interfaces based on orbital and quadrupole moments is essential to design MCA of novel magnetic applications.

cond-mat.mtrl-sci↗

Lattice dynamics and its effects on magnetocrystalline anisotropy energy of pristine and hole-doped YCo$_5$ from first principles

We study the lattice dynamics effects on the phase stability and magnetocrystalline anisotropy (MCA) energy of CaCu$_5$-type YCo$_5$ at finite temperatures using first-principles calculations based on density functional theory (DFT). Harmonic lattice dynamics (HLD) calculations indicate that YCo$_5$ with 56 full valance electrons is dynamically unstable and this instability can be cured by reducing the number of electrons ($N_e$). Crystal orbital Hamilton population analysis reveals that the observed phonon instability originates from the large population of antibonding states near the Fermi level, which is dominated by the Co atoms in the honeycomb layer. The antibonding state depopulates with decreasing $N_e$, resulting in stable phonons for hole-doped YCo$_5$ with $N_e$ $\leq$ 55. We then evaluate the temperature-dependent MCA energy using both HLD and $ab$ $initio$ molecular dynamics (AIMD) methods. For the pristine YCo$_5$, we observe a very weak temperature decay of the MCA energy, indicating little effect of lattice dynamics. Also, the MCA energies evaluated with AIMD at all target temperatures are larger than that of the static hexagonal lattice at 0 K, which is mainly attributed to the structural distortion driven by soft phonon modes. In the hole-doped YCo$_5$, where the distortion is suppressed, a considerable temperature decay in MCA energy is obtained both in HLD and AIMD methods, showing that lattice dynamics effects on MCA energy are non-negligible.

cond-mat.mtrl-sci↗

Crucial role of interfacial $s$-$d$ exchange interaction in the temperature dependence of tunnel magnetoresistance

The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe drawback for applications. Here, we reveal a crucial determinant of the drawback, that is, the $s$-$d$ exchange interaction between conduction $s$ and localized $d$ electrons at interfacial ferromagnetic layers. By calculating the temperature dependence of the TMR ratio in Fe/MgO/Fe(001), we show that the obtained TMR ratio significantly decreases with increasing temperature owing to the spin-flip scattering in the $Δ_1$ state induced by the $s$-$d$ exchange interaction. The material dependence of the coupling constant $J_{sd}$ is also discussed on the basis of a nonempirical method.

cond-mat.mtrl-sci↗