arXiv subjects

Yoshiro Hirayama

Publications and source records attributed to Yoshiro Hirayama.

16 recordsLinked to original sources

arXiv2022

Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact

The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC's 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devices, paves a new path for the development of semiconductor-based quantum technologies.

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arXiv2021

Wigner solids of domain wall skyrmions

Detection and characterization of a different type of topological excitations, namely the domain wall (DW) skyrmion, has received increasing attention because the DW is ubiquitous from condensed matter to particle physics and cosmology. Here we present experimental evidence for the DW skyrmion as the ground state stabilized by long-range Coulomb interactions in a quantum Hall ferromagnet. We develop an alternative approach using nonlocal resistance measurements together with a local NMR probe to measure the effect of low-current-induced dynamic nuclear polarization and thus to characterize the DW under equilibrium conditions. The dependence of nuclear spin relaxation in the DW on temperature, filling factor, quasiparticle localization, and effective magnetic fields allows us to interpret this ground state and its possible phase transitions in terms of Wigner solids of the DW skyrmion. These results demonstrate the importance of studying the intrinsic properties of quantum states that has been largely overlooked.

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arXiv2020

Imaging disorder-induced scattering centers in quantum Hall incompressible strip

While the disorder-induced quantum Hall (QH) effect has been studied previously, the effect ofdisorder potential on microscopic features of the integer QH effect remains unclear, particularly forthe incompressible (IC) strip. In this research, a scanning gate microscope incorporated with thenonequilibrium transport technique is used to image the region of QH IC strip that emerges near thesample edge. It was found that different mobility samples with varying disorder potentials showedthe same spatial dependence of the IC strip on the filling factor (ν). In the low-mobility samplealone, scattering centers such, bright, dark and annular patterns, alternately appear within the IC strip. These observed patterns are ascribed to inter-LL scattering assisted by resonance tunnelingthrough an impurity bound state. It is concluded that disorder-induced scattering can be effectivelydetected using the applied technique in a low-mobility sample.

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arXiv2019

1/f^2 spectra of decoherence noise on ^75^As nuclear spins in bulk GaAs

To identify the decoherence origin, frequency spectra using multiple π-pulses have been extensively studied. However, little has been discussed on how to define the spectral intensities from multiple-echo decays and how to incorporate the Hahn-echo T_2 in the noise spectra. Here, we show that experiments based on two theories solve these issues. With the previous theory clarifying that the spectral intensity should be given as the decay in the long-time limit, the intensity can be deduced without experimental artifacts usually entailed in the initial process. The other is the fluctuation-dissipation theory, with which the Hahn-echo T_2 is utilized as the zero-frequency limit of the noise spectrum and as an answer to the divergent issue on the 1/f^n noises. As a result, arsenic nuclear spins are found to exhibit 1/f2 dependences over two orders of magnitude in all the substrates of un-doped, Cr-doped semi-insulating and Si-doped metallic GaAs at 297 K. The 1/f^2 dependence indicates single noise source that is characterized by the characteristic frequency f_c_^un^=170 Hz, f_c_^Cr^=210 Hz and f_c_^Si^ =460 Hz. These f_c values are explained by a model that the decoherence is caused by the fluctuations of next-nearest-neighboring nuclear spins.

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arXiv2018

Landauer-Büttiker approach for hyperfine mediated electronic transport in the integer quantum Hall regime

The interplay of spin-polarized electronic edge states with the dynamics of the host nuclei in quantum Hall systems presents rich and non-trivial transport physics. Here, we develop a Landauer-Büttiker approach to understand various experimental features observed in the integer quantum Hall set ups featuring quantum point contacts. The approach developed here entails a phenomenological description of spin resolved inter-edge scattering induced via hyperfine assisted electron-nuclear spin flip-flop processes. A self-consistent simulation framework between the nuclear spin dynamics and edge state electronic transport is presented in order to gain crucial insights into the dynamic nuclear polarization effects on electronic transport and in turn the electron-spin polarization effects on the nuclear spin dynamics. In particular, we show that the hysteresis noted experimentally in the conductance-voltage trace as well as in the resistively detected NMR lineshape results from a lack of quasi-equilibrium between electronic transport and nuclear polarization evolution. In addition, we present circuit models to emulate such hyperfine mediated transport effects to further facilitate a clear understanding of the electronic transport processes occurring around the quantum point contact. Finally, we extend our model to account for the effects of quadrupolar splitting of nuclear levels and also depict the electronic transport signatures that arise from single and multi-photon processes.

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arXiv2016

Fabry-Pérot interference in a triple-gated quantum point contact

We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Pérot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed.

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arXiv2015

Quantum state tomography of large nuclear spins in a semiconductor quantum well: Optimal robustness against errors as quantified by condition numbers

We discuss methods of quantum state tomography for solid-state systems with a large nuclear spin $I=3/2$ in nanometer-scale semiconductors devices based on a quantum well. Due to quadrupolar interactions, the Zeeman levels of these nuclear-spin devices become nonequidistant, forming a controllable four-level quantum system (known as quartit or ququart). The occupation of these levels can be selectively and coherently manipulated by multiphoton transitions using the techniques of nuclear magnetic resonance (NMR) [Yusa et al., Nature (London) 434, 101 (2005)]. These methods are based on an unconventional approach to NMR, where the longitudinal magnetization $M_z$ is directly measured. This is in contrast to the standard NMR experiments and tomographic methods, where the transverse magnetization $M_{xy}$ is detected. The robustness against errors in the measured data is analyzed by using the condition number based on the spectral norm. We propose several methods with optimized sets of rotations yielding the highest robustness against errors, as described by the condition number equal to 1, assuming an ideal experimental detection. This robustness is only slightly deteriorated, as given by the condition number equal to 1.05, for a more realistic "noisy" $M_z$ detection based on the standard cyclically-ordered phase sequence (CYCLOPS) method.

quant-ph↗

arXiv2014

Radiative properties of multi-carrier bound excitons in GaAs

Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of ${k=0}$ excitons with an arbitrary number of charge carriers in different symmetry environments. Using this formalism, we predict three distinct lifetimes for the neutral acceptor bound exciton in GaAs, and confirm this prediction through polarization dependent and time-resolved photoluminescence experiments. We find the acceptor bound-exciton lifetimes to be ${T_o (1,3,3/4)}$ where ${T_o = (0.61 \pm 0.12) \text{ns}}$. Furthermore, we provide an estimate of the intra-level and inter-level exciton spin-relaxation rates.

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arXiv2011

Measurement of the Noise Spectrum Using a Multiple-Pulse Sequence

A method is proposed for obtaining the spectrum for noise that causes the phase decoherence of a qubit directly from experimentally available data. The method is based on a simple relationship between the spectrum and the coherence time of the qubit in the presence of a pi-pulse sequence. The relationship is found to hold for every system of a qubit interacting with the classical-noise, bosonic, and spin baths.

quant-ph↗

arXiv2005

Individual Mechanisms of Nuclear Spin Decoherence in a Nanoscale GaAs NMR Device

We study decoherence of nuclear spins in a nanoscale GaAs device based on resistively detected nuclear magnetic resonance (NMR). We demonstrate how the spin echo technique can be modified for our system, and this is compared to the damping of Rabi-type coherent oscillations. By selectively decoupling nuclear-nuclear and electron-nuclear spin, we determine decoherence rates due to individual mechanisms, namely, direct or indirect dipole coupling between different or like nuclides and electron-nuclear spin coupling. The data reveal that the indirect dipole coupling between Ga and As mediated by conduction electrons has the strongest contribution, whereas the direct dipole coupling between them has the smallest, reflecting the magic angle condition between the As-Ga bonds and the applied magnetic field.

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arXiv2004

Effects of Quantum-Well Inversion Asymmetry on Electron-Nuclear Spin Coupling in the Fractional Quantum Hall Regime

We examine effects of inversion asymmetry of a GaAs/Al0.3Ga0.7As quantum well (QW) on electron-nuclear spin coupling in the fractional quantum Hall (QH) regime. Increasing the QW potential asymmetry at a fixed Landau-level filling factor (nu) with gate voltages suppresses the current-induced nuclear spin polarization in the nu = 2/3 Ising QH ferromagnet, while it significantly enhances the nuclear spin relaxation at general nu. These findings suggest that mixing of different spin states due to the Rashba spin-orbit interaction strongly affects the electron-nuclear spin coupling.

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arXiv2003

Coherent manipulation of electronic states in a double quantum dot

We investigate coherent time-evolution of charge states (pseudo-spin qubit) in a semiconductor double quantum dot. This fully-tunable qubit is manipulated with a high-speed voltage pulse that controls the energy and decoherence of the system. Coherent oscillations of the qubit are observed for several combinations of many-body ground and excited states of the quantum dots. Possible decoherence mechanisms in the present device are also discussed.

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arXiv2002

Allowed and forbidden transitions in artificial hydrogen and helium atoms

The strength of radiative transitions in atoms is governed by selection rules. Spectroscopic studies of allowed transitions in hydrogen and helium provided crucial evidence for the Bohr's model of an atom. Forbidden transitions, which are actually allowed by higher-order processes or other mechanisms, indicate how well the quantum numbers describe the system. We apply these tests to the quantum states in semiconductor quantum dots (QDs), which are regarded as artificial atoms. Electrons in a QD occupy quantized states in the same manner as electrons in real atoms. However, unlike real atoms, the confinement potential of the QD is anisotropic, and the electrons can easily couple with phonons of the material. Understanding the selection rules for such QDs is an important issue for the manipulation of quantum states. Here we investigate allowed and forbidden transitions for phonon emission in one- and two-electron QDs (artificial hydrogen and helium atoms) by electrical pump-and-probe experiments, and find that the total spin is an excellent quantum number in artificial atoms. This is attractive for potential applications to spin based information storage.

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arXiv2002

Non-equilibrium transport through a vertical quantum dot in the absence of spin-flip energy relaxation

We investigate non-equilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel non-equilibrium tunneling processes involving high-spin states which cannot be excited from the ground state because of spin-blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory. The absence of effective spin relaxation induces considerable fluctuation of the spin, charge, and total energy of the quantum dot. Although these features are revealed clearly by pulse excitation measurements, they are also observed in conventional dc current characteristics of quantum dots.

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arXiv2000

Transient current spectroscopy of a quantum dot in the Coulomb blockade regime

Transient current spectroscopy is proposed and demonstrated in order to investigate the energy relaxation inside a quantum dot in the Coulomb blockade regime. We employ a fast pulse signal to excite an AlGaAs/GaAs quantum dot to an excited state, and analyze the non-equilibrium transient current as a function of the pulse length. The amplitude and time-constant of the transient current are sensitive to the ground and excited spin states. We find that the spin relaxation time is longer than, at least, a few microsecond.

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arXiv2000

Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

Radio-frequency (rf)- operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz) charge noise in an AlGaAs/GaAs quantum dot using a transmission-type rf-SET technique. The electron capture and emission kinetics on a trap in the vicinity of the quantum dot are dominated by a Poisson process. The maximum bandwidth for measuring single trapping events is about 1 MHz, which is the same as that required for observing single-electron tunneling oscillations in a measurable current (~0.1pA).

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