arXiv subjects

Yoshitaka Taniyasu

Publications and source records attributed to Yoshitaka Taniyasu.

At least 19 recordsLinked to original sources

arXiv2026

Non-Centrosymmetric $γ$-Phase GaS Nanobelts for On-Chip Nonlinear Photonic Applications

Second-order nonlinear optical processes in van der Waals (vdW) semiconductors offer a compelling route toward compact, integrable photon-conversion platforms. Among III-VI vdW semiconductors, GaS is particularly attractive owing to its wide bandgap suppressing two-photon absorption under near-infrared laser excitation. However, bulk GaS typically crystallizes in the centrosymmetric $β$ phase, which eliminates second-order nonlinearity and severely limits its application in nonlinear photonics. Here, we demonstrate that GaS nanobelts synthesized via self-catalyzed vapor-liquid-solid growth predominantly crystallize in non-centrosymmetric $γ$-phase stacking. This behavior originates from edge-selective growth kinetics at the Ga catalyst interface, which stabilizes the $γ$ phase and enables deterministic in-plane dipole moment alignment. The GaS nanobelts exhibit strong second-harmonic generation (SHG) with intensities comparable to those of GaSe, a widely used nonlinear optical material. Furthermore, we integrate the nanobelts onto SiN waveguides and demonstrate efficient on-chip SHG and sum-frequency generation. These results establish $γ$-GaS nanobelts as a transferable one-dimensional nonlinear materials well suited for on-chip photonic integration and indicate their strong potential for nonlinear optical applications.

physics.optics↗

arXiv2026

Nonreciprocal phonon propagation via spatially asymmetric magnon-phonon coupling

Nonreciprocal propagation of surface acoustic waves (SAWs) based on the spatial asymmetry of magnon-phonon coupling is demonstrated. This nonreciprocity is enabled by an acoustic wavelength scale thick magnetic layer formed under a thin piezoelectric film. In this configuration, magnon modes activated by dipole-dipole interactions are localized near either the top or bottom interface depending on the propagation direction of the SAW. As a result, the spatial overlap between interfacial magnon and surface phonon modes is expected to become direction dependent, in a manner that leads to distinct unidirectional propagation of SAWs. Notably, the resulting nonreciprocity reaches the highest level among those reported for SAW devices based on a single magnetic layer. This finding will establish a new strategy of nonreciprocal acoustic propagation in a structurally simple magnomechanical device.

cond-mat.mes-hall↗

arXiv2026

Coexistence of Donor and Acceptor Hydrogen States in n-Type InN

Hydrogen often exhibits amphoteric behavior in semiconductors, but its role is in n-type InN remains unresolved. Wurtzite InN is a narrow-gap semiconductor with high electron mobility and is therefore attractive for high-speed electronics and optoelectronic applications. Here we use hard x-ray photoemission spectroscopy (HAXPES) to probe hydrogen-related electronic structure in as-grown and post-annealed InN thin films prepared at different grown temperatures. Post annealing, which reduces the concentration of hydrogen impurities in the films, shifts the core-level spectra toward lower binding energy, consistent with a chemical-potential shift associated with the passivation of electron carriers. In the valence-band spectra, an acceptor-like in-gap feature near the valence-band maximum is suppressed after annealing. Together with the established donor-like behavior of hydrogen in InN, these results suggest that acceptor H- states coexist with donor H+ states in InN. The coexistence of these opposite hydrogen charge states provides a microscopic picture of hydrogen-driven compensation in InN and highlights the amphoteric nature of hydrogen even in a highly n-type semiconductor.

cond-mat.mtrl-sci↗

arXiv2026

Interpretable self-driving sputter epitaxy: from black-box optimization to human-usable growth rules

Self-driving laboratories have emerged as powerful tools for navigating high-dimensional process spaces, yet systems remain black-box optimizers that yield limited transferable process understanding. Here, we demonstrate an interpretable self-driving laboratory framework that transforms autonomous optimization into human-usable growth rules. As a stringent benchmark, we apply this framework to RF magnetron sputtering, addressing a long-standing challenge of achieving high-quality beta-Ga2O3 heteroepitaxy and single-crystalline beta-Ga2O3 homoepitaxy via sputtering. By combining Bayesian optimization with automated optical evaluation of the Urbach energy as a metric of sub-bandgap disorder, the self-driving system efficiently identifies heteroepitaxial growth conditions yielding a minimum Urbach energy of 182 meV, the lowest value for sputtered beta-Ga2O3 films. Importantly, the optimized growth window is transferable, realizing single-crystalline beta-Ga2O3 homoepitaxy without further optimization, corroborated by scanning transmission electron microscopy. To convert the closed-loop dataset into interpretable growth rules, we train a random forest surrogate and distill it into response curves and quantified pairwise interactions across the four-dimensional growth-parameter space. This analysis identifies substrate temperature as the primary control knob, with RF power and gas flows acting largely additively and only a modest temperature-oxygen coupling delineating the narrow window for high-quality growth, establishing a general route from autonomous experimentation to transferable growth rules.

cond-mat.mtrl-sci↗

arXiv2026

Intrinsic low-spin state and strain-tunable anomalous Hall scaling in high-quality SrRuO3 (111) films

The (111)-oriented 4d ferromagnetic perovskite SrRuO3 (SRO) offers a unique triangular-lattice geometry, making it a promising platform for exploring Berry-curvature-driven and spin-orbit-coupled transport. Here, we present a systematic study of the structure, magnetism, and magnetotransport of high-quality SRO (111) thin films with thicknesses t = 1.2-60 nm grown on SrTiO3 (111) substrates by machine-learning-assisted molecular beam epitaxy. We achieved a residual resistivity ratio of 45.5 in a 60 nm-thick film, the highest reported for this orientation, enabling access to intrinsic electronic and magnetic behavior. Temperature-dependent resistivity confirms Fermi-liquid transport below 15 K in both coherently strained (t = 10, 20 nm) and strain-relaxed (t = 60 nm) films, thereby enabling detailed magnetotransport and magnetic measurements. The linear, non-saturating positive magnetoresistance persists up to 14 T, while Hall-effect measurements and temperature scaling separate intrinsic (Karplus-Luttinger) and extrinsic (side-jump) contributions to the anomalous Hall effect, with the relative weight tuned by (111) epitaxial strain. X-ray magnetic circular dichroism at the Ru M2,3 and O K edges, together with SQUID magnetometry, demonstrates an intrinsically low-spin Ru ground state for both coherently strained and relaxed films, resolving ambiguities among prior reports. These detailed crystalline, electrical, and magnetic characterizations provide a rigorous foundation for understanding and engineering quantum transport in SRO (111).

cond-mat.mtrl-sci↗

arXiv2026

Physics-informed acquisition weighting for stoichiometry-constrained Bayesian optimization of oxide thin-film growth

We present a physics-informed Bayesian optimization (PIBO) with a concise modification to its acquisition function to incorporate the physical prior knowledge. Specifically, this method multiplies the expected improvement (EI) by a weight encoding prior crystal growth physics. When applied to LaAlO3 molecular-beam epitaxy, the weighting function defines a flat stoichiometric window and penalizes off-window proposals, thereby steering the optimization toward physically plausible regions while maintaining controlled exploration. In a closed-loop optimization, relative to the bare EI, which often proposes off-stoichiometric conditions, the weighted EI constrains the search toward stoichiometric regions while retaining sufficient flexibility to explore neighboring conditions, eventually identifying an optimum slightly beyond the stoichiometric window. Within only 15 growth runs, the lattice constant of the grown LaAlO3 film converged to the bulk value, evidencing efficient and rapid optimization for the ideal stoichiometric growth. Because physics knowledge is incorporated solely through the weighting function, the approach requires only minimal modification to standard BO workflows and is readily applicable to other material systems, offering a general and practical route to AI-driven materials synthesis.

cond-mat.mtrl-sci↗

arXiv2025

On-chip magnon polaron generation in mode-matched cavity magnomechanics

Generation of magnon polarons, which are hybridized states resulting from strong magnon-phonon coupling, is a key to enabling coherent manipulation in acoustic and spintronic devices. However, the conventional device configuration, a magnetic thin film on a thick piezoelectric layer, often has difficulty achieving a large magnon-phonon coupling due to a very small spatial mode overlap. Here, we demonstrate generation of magnon polarons by using a mode-matched on-chip magnomechanical system. A configuration with a thin piezoelectric film on a magnetic layer several micrometers thick was found to sustain deeply distributed magnon modes that enable magnetoelastic coupling to phonons over almost the entire mode volume. The enhanced spatial mode overlap generated magnon polarons whose spectra showed distinct avoided crossing. This magnomechanical system will facilitate utilization of coherent magnon-phonon conversion and their hybrid states in functional phononic devices.

cond-mat.mes-hall↗

arXiv2025

Orbital-resolved anisotropic electron pockets in electron-doped SrTiO3 observed by ARPES

SrTiO3 has attracted considerable interest as a wide-band gap semiconductor for advanced high-k capacitors and photocatalytic applications. Although previous angle-resolved photoemission spectroscopy (ARPES) studies have characterized the valence band structure originating from O 2p orbitals, the conduction band arising from Ti 3d orbitals upon electron doping, which is called electron pockets, remain poorly understood. In this study, polarization-dependent ARPES measurements were performed on Nb 1%-doped SrTiO3 (001), enabling direct, orbital-selective visualization of the electron pockets. From the measured band dispersion, we quantitatively determined their effective masses, anisotropy, and electron density. Our results revealed formation of an electron pocket at the Gamma point induced by Nb doping, yielding a direct bandgap of 3.79 eV at Gamma, consistent with previous optical measurements. Furthermore, the effective masses of m1 = 0.63m0 (short-axis direction) and m2 = 8.0m0 (long-axis direction) were identified, where m0 is the free electron mass, and the Fermi surface has been shown to be ellipsoidal. The electron density derived from these dispersions was found to be 3.58e20 cm-3. These findings provide a comprehensive picture of the conduction-band electronic structure that will be crucial in the design of STO-based functional devices.

cond-mat.mtrl-sci↗

arXiv2025

Electronic transport properties of titanium nitride grown by molecular beam epitaxy

This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline quality, as reflected in both RRR values and lattice parameter variations. Characterization of superconductivity yielded a Ginzburg-Landau coherence length of 60.4 $\pm$ 0.6 nm, significantly higher than typical sputtered films, suggesting improved superconducting coherence. First-principles calculations, in conjunction with experimental data, provided detailed insights into the electronic structure and transport properties of the TiN films. Temperature-dependent Hall coefficient measurements further revealed the influence of anisotropic scattering mechanisms. These findings establish a promising route for the development of nitride-based superconducting materials for advanced quantum computing technologies.

cond-mat.supr-con↗

arXiv2025

Single monolayer ferromagnetic perovskite SrRuO3 with high conductivity and strong ferromagnetism

Achieving robust ferromagnetism and high conductivity in atomically thin oxide materials is critical for advancing spintronic technologies. Here, we report the growth of a highly conductive and ferromagnetic single monolayer SrRuO3 having a high Curie temperature of 154 K on DyScO3 110 substrates. The SrTiO3 capping layer effectively suppresses surface reactions, which typically hinder ferromagnetism in atomically thin films. X ray absorption spectroscopy and X ray magnetic circular dichroism measurements revealed strong orbital hybridization between Ru 4d and O 2p orbitals in the SRO monolayer, which contributes to enhancement of the conductivity and ferromagnetic ordering of both the Ru 4d and O 2p orbitals. The resistivity of the single monolayer SrRuO3 on the better lattice matched DyScO3 substrate is approximately one-third of that of previously reported single monolayer SrRuO3 grown on an SrTiO3 substrate. This study highlights the potential of monolayer SrRuO3 as a platform for two dimensional magnetic oxide systems, offering new opportunities for the eploration of spintronic devices and quantum transport phenomena.

cond-mat.mtrl-sci↗

arXiv2024

Single-layer spin-orbit-torque magnetization switching due to spin Berry curvature generated by minute spontaneous atomic displacement in a Weyl oxide

Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is expected to be significantly enhanced; this enhancement will increase the intrinsic spin Hall effect in ferromagnetic materials and, thus, the spin-orbit torques (SOTs). However, this intriguing approach has not been applied to devices; generally, the extrinsic spin Hall effect in ferromagnet/heavy-metal bilayer is used for SOT magnetization switching. Here, SOT-induced partial magnetization switching is demonstrated in a single layer of a single-crystalline Weyl oxide SrRuO3 (SRO) with a small current density of ~3.1{\times}10^6 A cm-2. Detailed analysis of the crystal structure in the seemingly perfect periodic lattice of the SRO film reveals barely discernible oxygen octahedral rotations with angles of ~5° near the interface with a substrate. Tight-binding calculations indicate that a large spin Hall conductivity is induced around small gaps generated at band crossings by the synergy of inherent spin-orbit coupling and band inversion due to the rotations, causing magnetization reversal. Our results indicate that a minute atomic displacement in single-crystal films can induce strong intrinsic SOTs that are useful for spin-orbitronics devices.

cond-mat.mtrl-sci↗

arXiv2024

Role of Ion Milling Angle in Determining Conducting and Insulating States on SrTiO3 Surfaces

SrTiO3 (STO), a promising wide-bandgap semiconductor for high-k capacitors and photocatalysis, requires precise surface control for device fabrication. This study investigates the impact of ion milling on STO's surface conductivity. We find that ion milling at incident angles below 10 degree preserves the insulating state, while ion milling at larger angles induces a conducting surface with high electron mobility (5000-11000 cm2/Vs). This transition is attributed to the milling penetration depth exceeding the STO lattice constant (3.905 Å). Our results provide valuable insights for optimizing STO-based device fabrication, enabling precise control over surface properties while maintaining desired insulating characteristics.

cond-mat.mtrl-sci↗

arXiv2024

Influence of Ru composition deviation from stoichiometry on intrinsic spin-to-charge conversion in SrRuO3

Interconversion between charge and spin currents is a key phenomenon in realizing next-generation spintronic devices. Highly efficient spin-charge interconversion is expected to occur at band crossing points in materials with large spin-orbit interactions due to enhanced spin Berry curvature. On the other hand, if defects and/or impurities are present, they affect the electronic band structure, which in turn reduces the spin Berry curvature. Although defects and impurities are generally numerous in materials, their influence on the spin Berry curvature and, consequently, spin-charge interconversion has often been overlooked. In this paper, we perform spin-pumping experiments for stoichiometric SrRuO3 and non-stoichiometric SrRu0.7O3 films at 300 K, where the films are in paramagnetic states, to examine how Ru composition deviation from the stoichiometric condition influences the spin-to-charge conversion, showing that SrRuO3 has a larger spin Hall angle than SrRu0.7O3. We derive the band structures of paramagnetic SrRuO3 and SrRu0.75O3 using first-principles calculations, indicating that the spin Hall conductivity originating from the spin Berry curvature decreases when the Ru deficiency is incorporated, which agrees with the experimental results. Our results suggest that point-defect- and impurity control is essential to fully exploit the intrinsic spin Berry curvature and large spin-charge interconversion function of materials. These insights help us with material designs for efficient spin-charge interconversions.

cond-mat.mtrl-sci↗

arXiv2024

Correlated Ligand Electrons in the Transition-Metal Oxide SrRuO$_3$

In transition-metal compounds, the transition-metal d electrons play an important role in their physical properties; however, the effects of the electron correlation between the ligand p electrons have not been clear yet. In this Letter, the Ru 4d and O 2p partial density of states (PDOS) in transition-metal oxide SrRuO$_3$ involving Weyl fermions are investigated by resonant photoemission spectroscopy. The observations demonstrate that the O 2p PDOS is distorted from that predicted by first-principles calculations than the Ru 4d PDOS. The results indicate that the electron correlation in the ligand orbitals will be important to understand the electronic structure of the p-d hybridized state in strongly correlated electron systems, even with topological states.

cond-mat.str-el↗

arXiv2024

SrRuO3 under tensile strain: Thickness-dependent electronic and magnetic properties

The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains elusive. This study employs machine-learning-assisted molecular beam epitaxy to investigate SRO films with thicknesses from 1 to 10 nm. This work complements the existing focus on compressive-strained SRO, opening a new avenue for exploring its hitherto concealed potential. Using soft X-ray magnetic circular dichroism, we uncover an intriguing interplay between film thickness, electronic structure, and magnetic properties. Our key findings reveal an intensified localization of Ru 4d t2g-O 2p hybridized states at lower thicknesses, attributed to the weakened orbital hybridization. Furthermore, we find a progressive reduction of magnetic moments for both Ru and O ions as film thickness decreases. Notably, a non-ferromagnetic insulating state emerges at a critical thickness of 1 nm, marking a pivotal transition from the metallic ferromagnetic phase. These insights emphasize the importance of considering thickness-dependent properties when tailoring SRO for next-generation spintronic and topological electronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Suppression of nucleation density in twisted graphene domains grown on graphene/SiC template by sequential thermal process

We investigated the growth of twisted graphene on graphene/silicon carbide (SiC-G) templates by metal-free chemical vapor deposition (CVD) through a sequential thermal (ST) process, which exploits the ultraclean surface of SiC-G without exposing the surface to air before CVD. By conducting control experiments with SiC-G templates exposed to air (AirE process), structural analysis by atomic force microscopy revealed that the nucleation density of CVD graphene (CVD-G) was significantly suppressed in the ST process under the same growth condition. The nucleation behavior on SiC-G surfaces is observed to be very sensitive to carbon source concentration and process temperature. The nucleation on the ultraclean surface of SiC-G prepared by the ST process requires higher partial pressure of carbon source compared with that on the surface by the AirE process. Moreover, analysis of CVD-G growth over a wide temperature range indicates that nucleation phenomena change dramatically with a threshold temperature of 1300°C, possibly due to arising of etching effects. The successful synthesis of twisted few-layer graphene (tFLG) was affirmed by Raman spectroscopy, in which analysis of the G' band proves a high ratio of twisted structure in CVD-G. These results demonstrate that metal-free CVD utilizing ultraclean templates is an effective approach for the scalable production of large-domain tFLG that is valuable for electronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Observation of Acoustically Induced Dressed States of Rare-Earth Ions

Acoustically induced dressed states of long-lived erbium ions in a crystal are demonstrated. These states are formed by rapid modulation of two-level systems via strain induced by surface acoustic waves whose frequencies exceed the optical linewidth of the ion ensemble. Multiple sidebands and the reduction of their intensities appearing near the surface are evidence of a strong interaction between the acoustic waves and the ions. This development allows for on-chip control of long-lived ions and paves the way to highly coherent hybrid quantum systems with telecom photons, acoustic phonons, and electrons.

physics.optics↗

arXiv2024

Berezinskii-Kosterlitz-Thouless transition in rhenium nitride films

The quest to manipulate and understand superconductivity demands exploring diverse materials and unconventional behaviors. Here, we investigate the BKT transition in synthesized ReN$_x$ thin films, demonstrating their emergence as a compelling platform for studying this pivotal phenomenon. By systematically varying synthesis parameters, we achieve ReN$_x$ films exhibiting a BKT transition comparable or even surpassing the archetypal NbN$_x$ system. Detailed current-voltage measurements unlock the intrinsic parameters of the BKT transition, revealing the critical role of suppressed superconducting volume in pushing ReN$_x$ towards the two-dimensional limit. Utilizing this two-dimensional electron system, we employ Beasley-Mooij-Orlando (BMO) theory to extract the vortex unbinding transition temperature and superelectron density at the critical point. Further confirmation of the BKT transition is obtained through temperature-dependent resistivity, current-voltage, and magnetoresistance measurements. Our findings suggest that native disorder and inhomogeneity within ReN$_x$ thin films act to suppress long-range coherence, ultimately driving the system towards the BKT regime. This work establishes ReN$_x$ as a promising material for exploring BKT physics and paves the way for tailoring its properties for potential applications in superconducting devices.

cond-mat.supr-con↗