arXiv subjects

Yossarian Liebsch

Publications and source records attributed to Yossarian Liebsch.

4 recordsLinked to original sources

arXiv2026

Phenomenological Growth Regimes in Liquid-Precursor CVD of MoS$_2$ on Functional Substrates

The integration of two-dimensional transition-metal dichalcogenides (TMDCs) onto functional substrates remains constrained by stochastic vapor-phase growth dynamics. Here, we show that liquid-phase precursor chemical vapor deposition (CVD) of MoS$_2$ introduces growth conditions that are consistent with a substrate-influenced reaction-diffusion process. By utilizing pre-growth spin-coated MoO$_3$ intermediates across a diverse crystalline library (sapphire, SrTiO$_3$, rutile TiO$_2$, MgO, and 6H-SiC), we find that substrate-dependent variations in precursor wetting, surface chemistry, and inferred mass-transport constraints correlate with distinct growth morphologies. These substrate-dependent growth regimes are interpreted in terms of reduced effective lateral growth length on SrTiO$_3$, possible precursor anchoring on TiO$_2$, likely chemical surface restructuring on MgO, and possible step-edge growth on SiC. Raman and photoluminescence spectroscopy reveal substrate-dependent variations in vibrational and optical response that correlate with differences in strain, charge environment, and dielectric screening. Ultimately, this work highlights a substrate-dependent reaction-diffusion framework as a potentially useful route for tuning the structural and optical properties of large-area 2D materials.

cond-mat.mtrl-sci↗

arXiv2026

Quantitative Analysis of Composition and Contamination of Atomically Thin Materials by Recoil-Projectile Coincidence in Ion Transmission

Surface contamination strongly affects the intrinsic properties of nanoscale materials, making its reliable identification and quantification crucial for both accurate experimental interpretation and nanofabrication. Although scanning transmission electron microscopy can resolve contaminants at atomic resolution within nanometer-scale regions, it cannot easily provide a quantitative, large-area contamination measure. Here, we introduce a minimally destructive recoil-projectile coincidence method for ion transmission experiments that enables element-specific identification and quantification of surface contaminants with isotopic resolution. We demonstrate this approach by comparing self-supporting graphene samples prepared using either a polymethylmethacrylate (PMMA)-based or a PMMA-free transfer process. Carbon and hydrogen are identified as the dominant surface contaminants. PMMA-free transferred graphene exhibits the lowest native contamination levels. Following in-situ thermal annealing at 400 {\deg}C for 1 h, the measured carbon areal density approaches the value expected for atomically clean single-layer graphene within the experimental uncertainty, while hydrogen coverage is strongly reduced. Unlike PMMA-transferred graphene, which rapidly recontaminates after annealing, PMMA-free transferred graphene remains nearly contamination-free for at least 140 min under ultra-high vacuum conditions ($p_{\mathrm{base}} = 2 \times 10^{-8}$ mbar). Beyond graphene, the presented method establishes a quantitative characterization platform for ultrathin materials, enabling studies of surface cleanliness, adsorption, implantation and surface interaction dynamics in such systems.

cond-mat.mtrl-sci↗

arXiv2026

Rainbow Scattering from Graphene

We report the experimental observation of atomic rainbow scattering of 40 keV Xe$^+$ ions transmitted through self-supporting single-layer graphene using time-of-flight medium energy ion scattering. Supported by molecular dynamics and binary collision approximation simulations, we show that the rainbow pattern of graphene consists of a small hexagonal inner rainbow, arising from projectiles with characteristic trajectories interacting with multiple carbon atoms, and a larger circular outer rainbow, arising from close binary collisions between projectiles and individual carbon atoms.

cond-mat.mtrl-sci↗

arXiv2023

Manipulation of the electrical and memory properties of MoS$_2$ field-effect transistors by highly charged ion irradiation

Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS$_2$ lattice or in the underlying substrate. We fabricated MoS$_2$ field-effect transistors on SiO$_2$/Si substrates, irradiated these devices with Xe$^{30+}$ ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties. We find clear influences of the irradiation: While the charge carrier mobility decreases linearly with increasing ion fluence (up to only 20% of its initial value) the conductivity actually increases again after an initial drop of around two orders of magnitude, likely due to the occurence of hopping transport via localized states. We also find a significantly reduced $n$-doping ($\approx$ 10$^{12}$ per cm$^{2}$) and a well-developed hysteresis after the irradiation. The hysteresis height increases with increasing ion fluence and enables us to characterize the irradiated MoS$_2$ field-effect transistor as a memory device with remarkably longer relaxation times ($\approx$ minutes) compared to previous works.

physics.app-ph↗