arXiv subjects

Youngho Kang

Publications and source records attributed to Youngho Kang.

10 recordsLinked to original sources

arXiv2026

Radiative electronic bound states in the continuum from defects in semiconductors

Continuum-buried defect states in semiconductors are generally expected to be optically inactive due to their strong coupling to continuum bands. Here, we show that such defects can instead host radiative electronic bound states in the continuum (BICs), using the silicon G-center as a prototypical example. Hybrid-functional first-principles calculations with a Hubbard $U$ correction reveal that a localized defect state, initially buried below the valence band maximum (VBM) in the ground state, undergoes exchange-driven energy-level reordering under optical excitation and shifts above the VBM. This exchange-induced transition suppresses nonradiative decay and enables robust radiative emission. By computing temperature-dependent nonradiative lifetimes and comparing them with experimental photoluminescence (PL) lifetimes, we quantitatively reproduce the observed temperature dependence of the emission. These results uncover a stabilization mechanism for continuum-embedded defect states and establish electronic BICs as a general paradigm for designing defect-based optical systems, including quantum emitters and qubits.

cond-mat.mtrl-sci↗

arXiv2026

A Lightweight Universal Machine-Learning Interatomic Potential via Knowledge Distillation for Scalable Atomistic Simulations

We introduce a lightweight universal machine-learning interatomic potential (uMLIP), SevenNet-Nano, based on the graph neural network architecture SevenNet and enabled by a knowledge-distillation framework. The model inherits the broad generalization capability of a large multi-task foundation model, SevenNet-Omni, trained on diverse materials datasets across chemical, configurational, and computational spaces. By learning chemical representations from high-quality inference data generated by the teacher model within a unified computational framework, SevenNet-Nano achieves high accuracy and strong transferability despite its compact architecture. The model also accurately captures a wide range of interatomic interactions, enabling reliable simulations under both equilibrium and extreme conditions, including plasma etching of SiO$_2$. Comprehensive benchmarks on static and dynamical properties--such as Li-ion diffusion and liquid densities--demonstrate its broad applicability with minimal fine-tuning. Importantly, SevenNet-Nano significantly reduces computational cost, achieving over an order-of-magnitude speedup and enabling large-scale atomistic simulations involving thousands of atoms.

cond-mat.mtrl-sci↗

arXiv2026

Atomic-Scale Mechanisms of SiO$_2$ Plasma-Enhanced Chemical Vapor Deposition Revealed by Molecular Dynamics with a Machine-Learning Interatomic Potential

Plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO$_2$) is widely used for low-temperature fabrication of dielectric thin films, yet its atomic-scale growth mechanisms remain incompletely understood. In this work, we investigate SiO$_2$ PECVD using silane and N$_2$O as source gases via molecular dynamics simulations driven by a machine-learning interatomic potential. By systematically varying the oxidant-to-silane-derived species ratio $r$, we elucidate the evolution of film stoichiometry, density, and hydrogen content. Formation of the Si-O-Si network primarily proceeds via oxidation of surface Si-H groups to form Si-OH species, followed by condensation of neighboring Si-OH groups that produces H$_2$O as the dominant byproduct. At low $r$, H$_2$ formation via reactions between Si-H and Si-OH groups also contributes to the network formation. Increasing oxidant supply promotes the network formation through oxidation of residual Si-H species, suppressing hydrogen incorporation and leading to saturation of the Si/O ratio. Rapid chemisorption of silane-derived species, together with steric hindrance from pre-deposited species, results in localized growth and surface roughness. We further show that high-kinetic-energy plasma species can etch SiO$_2$ films, which potentially limits growth rates and enhances surface roughness under high RF-power conditions. These results provide atomic-scale insight into PECVD growth and guidance for optimizing film composition and quality.

cond-mat.mtrl-sci↗

arXiv2025

Discovery of oxide Li-conducting electrolytes in uncharted chemical space via topology-constrained crystal structure prediction

Oxide Li-conducting solid-state electrolytes (SSEs) offer excellent chemical and thermal stability but typically exhibit lower ionic conductivity than sulfides and chlorides. This motivates the search for new oxide materials with enhanced conductivity. Crystal structure prediction is a powerful approach for identifying such candidates. However, the structural complexity of oxide SSEs, often involving unit cells with more than 100 atoms, presents significant challenges for conventional methods. In this study, we introduce TOPIC, a structure prediction algorithm that reduces configurational complexity by enforcing corner-sharing (CS) bond topology constraints. We demonstrate that TOPIC successfully reproduces the ground-state and metastable structures of known oxide SSEs, including LiTa$_2$PO$_8$ and Li$_7$La$_3$Zr$_2$O$_{12}$, which contain up to about 200 atoms per unit cell. By combining this approach with a pretrained machine-learning interatomic potential, we systematically screen quaternary oxide compositions and identify 92 promising candidates with CS frameworks. In particular, Li$_4$Hf$_2$Si$_3$O$_{12}$, which corresponds to the ground state at its composition, exhibits an ionic conductivity of 14 mS cm$^{-1}$, a hull energy of 21 meV atom$^{-1}$, and a band gap of 6.5 eV. Through our investigation, we identify the Li ratio as one of the key factors determining the stability of CS structures. Overall, our approach provides a practical and scalable pathway for discovering high-performance oxide solid electrolytes in previously unexplored chemical spaces.

cond-mat.mtrl-sci↗

arXiv2025

Atomistic insights into hydrogen migration in IGZO from machine-learning interatomic potential: linking atomic diffusion to device performance

Understanding hydrogen diffusion is critical for improving the reliability and performance of oxide thin-film transistors (TFTs), where hydrogen plays a key role in carrier modulation and bias instability. In this work, we investigate hydrogen diffusion in amorphous IGZO ($a$-IGZO) and $c$-axis aligned crystalline IGZO (CAAC-IGZO) using machine learning interatomic potential molecular dynamics (MLIP-MD) simulations. We construct accurate phase-specific MLIPs by fine-tuning SevenNet-0, a universal pretrained MLIP, and validate the models against a comprehensive dataset covering hydrogen-related configurations and diffusion environments. Hydrogen diffusivity is evaluated over 650--1700 K, revealing enhanced mobility above 750 K in $a$-IGZO due to the glassy matrix, while diffusion at lower temperatures is constrained by the rigid network. Arrhenius extrapolation of the diffusivity indicates that hydrogen in $a$-IGZO can reach the channel/insulator interface within $10^{4}$ seconds at 300--400 K, likely contributing to negative bias stress-induced device degradation. Trajectory analysis reveals that long-range diffusion in $a$-IGZO is enabled by a combination of hydrogen hopping and flipping mechanisms. In CAAC-IGZO, hydrogen exhibits high in-plane diffusivity but severely restricted out-of-plane transport due to a high energy barrier along the $c$-axis. This limited vertical diffusion in CAAC-IGZO suggests minimal impact on bias instability. This work bridges the atomic-level hydrogen transport mechanism and device-level performance in oxide TFTs by leveraging large-scale MLIP-MD simulations.

cond-mat.mtrl-sci↗

arXiv2025

An efficient forgetting-aware fine-tuning framework for pretrained universal machine-learning interatomic potentials

Pretrained universal machine-learning interatomic potentials (MLIPs) have revolutionized computational materials science by enabling rapid atomistic simulations as efficient alternatives to ab initio methods. Fine-tuning pretrained MLIPs offers a practical approach to improving accuracy for materials and properties where predictive performance is insufficient. However, this approach often induces catastrophic forgetting, undermining the generalizability that is a key advantage of pretrained MLIPs. Herein, we propose reEWC, an advanced fine-tuning strategy that integrates Experience Replay and Elastic Weight Consolidation (EWC) to effectively balance forgetting prevention with fine-tuning efficiency. Using Li$_6$PS$_5$Cl (LPSC), a sulfide-based Li solid-state electrolyte, as a fine-tuning target, we show that reEWC significantly improves the accuracy of a pretrained MLIP, resolving well-known issues of potential energy surface softening and overestimated Li diffusivities. Moreover, reEWC preserves the generalizability of the pretrained MLIP and enables knowledge transfer to chemically distinct systems, including other sulfide, oxide, nitride, and halide electrolytes. Compared to Experience Replay and EWC used individually, reEWC delivers clear synergistic benefits, mitigating their respective limitations while maintaining computational efficiency. These results establish reEWC as a robust and effective solution for continual learning in MLIPs, enabling universal models that can advance materials research through large-scale, high-throughput simulations across diverse chemistries.

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arXiv2025

Neural Network-Driven Molecular Insights into Alkaline Wet Etching of GaN: Toward Atomistic Precision in Nanostructure Fabrication

We present large-scale molecular dynamics (MD) simulations based on a machine-learning interatomic potential to investigate the wet etching behavior of various GaN facets in alkaline solution-a process critical to the fabrication of nitride-based semiconductor devices. A Behler-Parrinello-type neural network potential (NNP) was developed by training on extensive DFT datasets and iteratively refined to capture chemical reactions between GaN and KOH. To simulate the wet etching of GaN, we perform NNP-MD simulations using the temperature-accelerated dynamics approach, which accurately reproduces the experimentally observed structural modification of a GaN nanorod during alkaline etching. The etching simulations reveal surface-specific morphological evolutions: pyramidal etch pits emerge on the $-c$ plane, while truncated pyramidal pits form on the $+c$ surface. The non-polar m and a surfaces exhibit lateral etch progression, maintaining planar morphologies. Analysis of MD trajectories identifies key surface reactions governing the etching mechanisms. To gain deeper insights into the etching kinetics, we conduct enhanced-sampling MD simulations and construct free-energy profiles for Ga dissolution, a process that critically influences the overall etching rate. The $-c$, $a$, and $m$ planes exhibit moderate activation barriers, indicating the feasibility of alkaline wet etching. In contrast, the $+c$ surface displays a significantly higher barrier, illustrating its strong resistance to alkaline etching. Additionally, we show that Ga-O-Ga bridges can form on etched surfaces, potentially serving as carrier traps. By providing a detailed atomistic understanding of GaN wet etching, this work offers valuable guidance for surface engineering in GaN-based device fabrication.

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arXiv2024

Data-efficient multi-fidelity training for high-fidelity machine learning interatomic potentials

Machine learning interatomic potentials (MLIPs) are used to estimate potential energy surfaces (PES) from ab initio calculations, providing near quantum-level accuracy with reduced computational costs. However, the high cost of assembling high-fidelity databases hampers the application of MLIPs to systems that require high chemical accuracy. Utilizing an equivariant graph neural network, we present an MLIP framework that trains on multi-fidelity databases simultaneously. This approach enables the accurate learning of high-fidelity PES with minimal high-fidelity data. We test this framework on the Li$_6$PS$_5$Cl and In$_x$Ga$_{1-x}$N systems. The computational results indicate that geometric and compositional spaces not covered by the high-fidelity meta-gradient generalized approximation (meta-GGA) database can be effectively inferred from low-fidelity GGA data, thus enhancing accuracy and molecular dynamics stability. We also develop a general-purpose MLIP that utilizes both GGA and meta-GGA data from the Materials Project, significantly enhancing MLIP performance for high-accuracy tasks such as predicting energies above hull for crystals in general. Furthermore, we demonstrate that the present multi-fidelity learning is more effective than transfer learning or $Δ$-learning an d that it can also be applied to learn higher-fidelity up to the coupled-cluster level. We believe this methodology holds promise for creating highly accurate bespoke or universal MLIPs by effectively expanding the high-fidelity dataset.

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arXiv2023

Disorder-dependent Li diffusion in $\mathrm{Li_6PS_5Cl}$ investigated by machine learning potential

Solid-state electrolytes with argyrodite structures, such as $\mathrm{Li_6PS_5Cl}$, have attracted considerable attention due to their superior safety compared to liquid electrolytes and higher ionic conductivity than other solid electrolytes. Although experimental efforts have been made to enhance conductivity by controlling the degree of disorder, the underlying diffusion mechanism is not yet fully understood. Moreover, existing theoretical analyses based on ab initio MD simulations have limitations in addressing various types of disorder at room temperature. In this study, we directly investigate Li-ion diffusion in $\mathrm{Li_6PS_5Cl}$ at 300 K using large-scale, long-term MD simulations empowered by machine learning potentials (MLPs). To ensure the convergence of conductivity values within an error range of 10%, we employ a 25 ns simulation using a $5\times5\times5$ supercell containing 6500 atoms. The computed Li-ion conductivity, activation energies, and equilibrium site occupancies align well with experimental observations. Notably, Li-ion conductivity peaks when Cl ions occupy 25% of the 4c sites, rather than at 50% where the disorder is maximized. This phenomenon is explained by the interplay between inter-cage and intra-cage jumps. By elucidating the key factors affecting Li-ion diffusion in $\mathrm{Li_6PS_5Cl}$, this work paves the way for optimizing ionic conductivity in the argyrodite family.

cond-mat.mtrl-sci↗

arXiv2016

First-principles analysis of electron transport in BaSnO$_3$

BaSnO$_3$ (BSO) is a promising transparent conducting oxide (TCO) with reported room-temperature (RT) Hall mobility exceeding 320 cm$^{2}$V$^{-1}$s$^{-1}$. Among perovskite oxides, it has the highest RT mobility, about 30 times higher than that of the prototypical SrTiO$_3$. Using first-principles calculations based on hybrid density functional theory, we elucidate the physical mechanisms that govern the mobility by studying the details of LO-phonon and ionized impurity scattering. A careful numerical analysis to obtain converged results within the relaxation-time approximation of Boltzmann transport theory is presented. The ${\bf k}$ dependence of the relaxation time is fully taken into account. We find that the high RT mobility in BSO originates not only from a small effective mass, but also from a significant reduction in the phonon scattering rate compared to other perovskite oxides; the origins of this reduction are identified. Ionized impurity scattering influences the total mobility even at RT for dopant densities larger than $5\times10^{18}$ cm$^{-3}$, and becomes comparable to LO-phonon scattering for $1\times10^{20}$ cm$^{-3}$ doping, reducing the drift mobility from its intrinsic LO-phonon-limited value of $\sim$594 cm$^{2}$V$^{-1}$s$^{-1}$ to less than 310 cm$^{2}$V$^{-1}$s$^{-1}$. We suggest pathways to avoid impurity scattering via modulation doping or polar discontinuity doping. We also explicitly calculate the Hall factor and Hall mobility, allowing a direct comparison to experimental reports for bulk and thin films and providing insights into the nature of the dominant mechanisms that limit mobility in state-of-the art samples.

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