arXiv subjects

Youngoh Son

Publications and source records attributed to Youngoh Son.

2 recordsLinked to original sources

arXiv2025

Interplay of canted antiferromagnetism and nematic order in Mott insulating Sr2Ir1-xRhxO4

Sr2IrO4 is one of the prime candidates for realizing exotic quantum spin orders owing to the subtle combination of spin-orbit coupling and electron correlation. Sensitive local magnetization measurement can serve as a powerful tool to study these kinds of systems with multiple competing spin orders since the comprehensive study of the spatially-varying magnetic responses provide crucial information of their energetics. Here, using sensitive magneto-optical Kerr effect measurements and spin Hamiltonian model calculations, we show that Sr2IrO4 has non-trivial domain structures which cannot be understood by conventional antiferromagnetism. This unconventional magnetic response exhibits broken symmetry along the Ir-O-Ir bond direction and is enhanced upon spin-flip transition or Rh-doping. Our analysis, based on possible stacking patterns of spins, shows that introduction of an additional rotational-symmetry breaking is essential to describe the magnetic behavior of Sr2Ir1-xRhxO4, providing strong evidence for a nematic hidden order phase in this highly correlated spin-orbit Mott insulator.

cond-mat.mtrl-sci↗

arXiv2024

Characterization of a graphene-hBN superlattice field effect transistor

Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moiré potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures.

cond-mat.mes-hall↗