arXiv subjects

Yu Huang

Publications and source records attributed to Yu Huang.

At least 253 records · Page 14Linked to original sources

arXiv2018

Efficient Time-Evolving Stream Processing at Scale

Time-evolving stream datasets exist ubiquitously in many real-world applications where their inherent hot keys often evolve over times. Nevertheless, few existing solutions can provide efficient load balance on these time-evolving datasets while preserving low memory overhead. In this paper, we present a novel grouping approach (named FISH), which can provide the efficient time-evolving stream processing at scale. The key insight of this work is that the keys of time-evolving stream data can have a skewed distribution within any bounded distance of time interval. This enables to accurately identify the recent hot keys for the real-time load balance within a bounded scope. We therefore propose an epoch-based recent hot key identification with specialized intra-epoch frequency counting (for maintaining low memory overhead) and inter-epoch hotness decaying (for suppressing superfluous computation). We also propose to heuristically infer the accurate information of remote workers through computation rather than communication for cost-efficient worker assignment. We have integrated our approach into Apache Storm. Our results on a cluster of 128 nodes for both synthetic and real-world stream datasets show that FISH significantly outperforms state-of-the-art with the average and the 99th percentile latency reduction by 87.12% and 76.34% (vs. W-Choices), and memory overhead reduction by 99.96% (vs. Shuffle Grouping).

cs.DC↗

arXiv2018

Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2

For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 °C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best performance to be reported. The DC performance of these devices were typical, but the RF performance, enabled by buried gates and on the order of 100 MHz, was reported for the first time for liquid-exfoliated MoS2. To resolve the dilemma of thin vs. thick films, gate recess was used on 20-nm thick films to improve the gate control while keeping the contact resistance lower than that on 10-nm films. These innovations may enable thin-film transistors to operate in the microwave range.

physics.app-ph↗

arXiv2018

Observations of Electron-driven Evaporation during a Flare Precursor

We investigate the relationship between the blue shifts of a hot emission line and the nonthermal emissions in microwave and hard X-ray (HXR) wavelengths during the precursor of a solar flare on 2014 October 27. The flare precursor is identified as a small but well-developed peak in soft X-ray and extreme-ultraviolet passbands before the GOES flare onset, which is accompanied by a pronounced burst in microwave 17 & 34 GHz and HXR 25-50 keV. The slit of Interface Region Imaging Spectrograph (IRIS) stays at one ribbon-like transient during the flare precursor, where shows visible nonthermal emissions in NoRH and RHESSI images. The IRIS spectroscopic observations show that the hot line of Fe XXI 1354.09 A (logT ~ 7.05) displays blue shifts, while the cool line of Si IV 1402.77 A (logT ~ 4.8) exhibits red shifts. The blue shifts and red shifts are well correlated to each other, indicative of an explosive chromospheric evaporation during the flare precursor particularly combining with a high nonthermal energy flux and a short characteristic timescale. In addition, the blue shifts of Fe XXI 1354.09 A are well correlated with the microwave and HXR emissions, implying that the explosive chromospheric evaporation during the flare precursor is driven by nonthermal electrons.

astro-ph.SR↗

arXiv2018

Weak Mixing in Switched Systems

Given a switched system, we introduce weakly mixing sets of type 1, 2 and Xiong chaotic sets of type 1, 2 with respect to a given set and show that they are equivalent respectively.

math.DS↗

arXiv2017

Transitively-Saturated Property, Banach Recurrence and Lyapunov Regularity

The topological entropy of various gap-sets on periodic-like recurrence and Birkhoff regularity were considered in [69] but some Banach recurrence and Lyapunov regularity are not considered. In this paper we introduce five new levels on Banach recurrence and show they all carry full topological entropy, and simultaneously combine with Lyapunov regularity to get some refined theory on mixed multifractal analysis of [8,29]. In this process, we strengthen Pfister and Sullivan's result of [58] from saturated property to transitively-saturated property (and from single-saturated property to transitively-convex-saturated property).

math.DS↗

arXiv2017

Broadband gate-tunable THz plasmons in graphene heterostructures

Graphene, a unique two-dimensional material of carbon in a honeycomb lattice, has brought remarkable breakthroughs across the domains of electronics, mechanics, and thermal transport, driven by the quasiparticle Dirac fermions obeying a linear dispersion. Here we demonstrate a counter-pumped all-optical difference frequency process to coherently generate and control THz plasmons in atomic layer graphene with an octave tunability and high efficiency. We leverage the inherent surface asymmetry of graphene for a strong second-order nonlinear polarizability chi(2), which together with tight plasmon field confinement, enables a robust difference frequency signal at THz frequencies. The counter-pumped resonant process on graphene uniquely achieves both energy and momentum conservation. Consequently we demonstrate a dual-layer graphene heterostructure that achieves the charge- and gate-tunability of the THz plasmons over an octave, from 9.4 THz to 4.7 THz, bounded only by the pump amplifier optical bandwidth. Theoretical modeling supports our single-volt-level gate tuning and optical-bandwidth-bounded 4.7 THz phase-matching measurements, through the random phase approximation with phonon coupling, saturable absorption, and below the Landau damping, to predict and understand the graphene carrier plasmon physics.

physics.optics↗

arXiv2017

Doppler shift oscillations from a hot line observed by IRIS

We present a detailed investigation of the Doppler shift oscillations in a hot loop during an M7.1 flare on 2014 October 27 observed by the Interface Region Imaging Spectrograph. The periodic oscillations are observed in the Doppler shift of Fe XXI 1354.09 A (logT~7.05), and the dominant period is about 3.1 minutes. However, such 3.1-min oscillations are not found in the line-integrated intensity of Fe XXI 1354.09 A, AIA EUV fluxes, or microwave emissions. SDO/AIA and Hinode/XRT imaging observations indicate that the Doppler shift oscillations locate at the hot loop-top region (> 11MK). Moreover, the differential emission measure (DEM) results show that the temperature is increasing rapidly when the Doppler shift oscillates, but the number density does not exhibit the corresponding increases nor oscillations, implying that the flare loop is likely to oscillate in an incompressible mode. All these facts suggest that the Doppler shift oscillations at the shorter period are most likely the standing kink oscillations in a flare loop. Meanwhile, a longer period of about 10 minutes is identified in the time series of Doppler shift and line-integrated intensity, GOES SXR fluxes and AIA EUV light curves, indicating the periodic energy release in this flare, which may be caused by a slow mode wave.

astro-ph.SR↗

arXiv2017

The radiation mechanism of fast radio bursts

Fast radio bursts are radio transients observed mainly around 1.5 GHz. Their peak frequency decreases at a rate of 100 ~ 500 MHz/s and some of them have a broader pulse with an exponentially decaying tail. Common assumptions for fast radio bursts include a dispersion effect resulting in the peak frequency drifting and a scattering effect resulting in pulse broadening. These assumptions attribute the abnormally large dispersion measure and scattering measure to the environmental medium of the host galaxy. Here we show that the radiation of fast radio bursts can be explained as an undulator radiation and the large dispersion measure can be due to a motion effect mainly from the rotation of the source which is probably variable stars. In our scenario, the pulse broadening is near-field effects and the pulse itself represents a Fresnel diffraction pattern sweeping the observer. Our work is the first analysis of properties of fast radio bursts in the context of a special mechanism of the radiation instead of a special propagation environment of the radiation.

astro-ph.HE↗

arXiv2017

Explosive chromospheric evaporation driven by nonthermal electrons around one footpoint of a solar flare loop

We explore the temporal relationship between microwave/HXR emission and Doppler velocity during the impulsive phase of a solar flare on 2014 October 27 (SOL2014-10-27), which displays a pulse on the light curves in microwave (34 GHz) and hard X-ray (HXR, 25-50 keV) bands before the flare maximum. Imaging observation shows that this pulse mainly comes from one footpoint of a solar flare loop. The slit of Interface Region Imaging Spectrograph (IRIS) stays at this footpoint during this solar flare. The Doppler velocities of Fe XXI 1354.09 A and Si IV 1402.77 A are extracted from the Gaussian fitting method. We find that the hot line of Fe XXI 1354.09 A (logT~7.05) in corona exhibits blue shift, while the cool line of Si IV 1402.77 A (logT~4.8) in transition region exhibits red shift, indicating explosive chromospheric evaporation. The evaporative upflows along the flare loop are also observed in the AIA 131 A image. To our knowledge, this is the first report of chromospheric evaporation evidence from both spectral and imaging observations in the same flare. Both microwave and HXR pulses are well correlated with the Doppler velocities, suggesting that the chromospheric evaporation is driven by nonthermal electrons around this footpoint of a solar flare loop.

astro-ph.SR↗

arXiv2016

Quasi-periodic pulsations with periods that change depending on whether the pulsations have thermal or nonthermal components

Context. Quasi-periodic pulsations (QPPs) typically display periodic and regular peaks in the light curves during the flare emissions. Sometimes, QPPs show multiple periods at the same wavelength. However, changing periods in various channels are rare. Aims. We report QPPs in a solar flare on 2014 October 27. They showed a period change that depended on whether thermal or nonthermal components were included. The flare was simultaneously observed by many instruments. Methods. Using the fast Fourier transform (FFT), we decomposed the light curves at multiple wavelengths into slowly varying and rapidly varying signals. Then we identified the QPPs as the regular and periodic peaks from the rapidly varying signals. The periods are derived with the wavelet method and confirmed based on the FFT spectra of the rapidly varying signals. Results. We find a period of 50 s from the thermal emissions during the impulsive phase of the flare, that is, in the soft X-ray bands. At the same time, a period of about 100 s is detected from the nonthermal emissions, such as hard X-ray and microwave channels. The period ratio is exactly 2.0, which might be due to the modulations of the magnetic reconnection rate by the fundamental and harmonic modes of magnetohydrodynamic waves. Our results further show that the 100 s period is present over a broad wavelength, such as hard X-rays, extreme-UV/UV, and microwave emissions, indicating the periodic magnetic reconnection in this flare. Conclusions. To our knowledge, this is the first report about period changes from thermal to nonthermal components in a single flare that occur at almost the same time. This new observational finding could be a challenge to the theory of flare QPPs.

astro-ph.SR↗

arXiv2016

Gate-induced insulator to band-like transport transition in organolead halide perovskite

Understanding the intrinsic charge transport in organolead halide perovskites is essential for the development of high-efficiency photovoltaics and other optoelectronic devices. Despite the rapid advancement of the organolead halide perovskite in photovoltaic and optoelectronic applications, the intrinsic charge carrier transport in these materials remains elusive partly due to the difficulty of fabricating electrical devices and obtaining good electrical contact. Here, we report the fabrication of organolead halide perovskite microplates with monolayer graphene as low barrier electrical contact. A systematic charge transport studies reveal an insulator to band-like transport transition. Our studies indicate that the insulator to band-like transport transition depends on the orthorhombic-to-tetragonal phase transition temperature and defect densities of the organolead halide perovskite microplates. Our findings are not only important for the fundamental understanding of charge transport behavior but also offer valuable practical implications for photovoltaics and optoelectronic applications based on the organolead halide perovskite.

cond-mat.mtrl-sci↗

arXiv2015

High Current Density Vertical Tunneling Transistors from Graphene/Highly-Doped Silicon Heterostructures

Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus on junctions between graphene and lightly-doped silicon, where a Schottky barrier is believed to dominate the carrier transport process. Here we report a systematic investigation of carrier transport across the heterojunctions formed between graphene and highly-doped silicon. By varying the silicon doping level and the measurement temperature, we show that the carrier transport across the graphene/p++-Si heterojunction is dominated by tunneling effect through the native oxide. We further demonstrate that the tunneling current can be effectively modulated by the external gate electrical field, resulting in a vertical tunneling transistor. Benefited from the large density of states of highly doped silicon, our tunneling transistors can deliver a current density over 20 A/cm2, about two orders of magnitude higher than previous graphene/insulator/graphene tunneling transistor at the same on/off ratio.

cond-mat.mtrl-sci↗

arXiv2015

Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2

The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2. We show that GaN-Al2O3-MoS2 and GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour. Electroluminescence studies demonstrate prominent direct bandgap excitonic emission in multi-layer MoS2 over the entire vertical junction area. Importantly, the electroluminescence efficiency observed in multi-layer MoS2 is comparable to or even higher than that in monolayers, corresponding to a relative electroluminescence enhancement factor of >1000 in multi-layer MoS2 when compared to its photoluminescence. This striking enhancement of electroluminescence can be attributed to the high electric field induced carrier redistribution from low energy points (indirect bandgap) to high energy points (direct bandgap) of k-space, arising from the unique band structure of MoS2 with a much higher density of states at high energy points. The electric field induced electroluminescence is general for other TMDs including WSe2, and can provide a fundamental platform to probe the carrier injection, population and recombination in multi-layer TMDs and open up a new pathway toward TMD based optoelectronic devices.

cond-mat.mes-hall↗

arXiv2015

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.

cond-mat.mtrl-sci↗

arXiv2015

Van der Waals heterojunction devices based on organohalide perovskites and two-dimensional materials

The recently emerged organohalide perovskites (e.g., CH3NH3PbI3) have drawn intense attention for high efficiency solar cells. However, with a considerable solubility in many solvents, these perovskites are not typically compatible with conventional lithography processes for more complicated device fabrications that are important for both fundamental studies and technological applications. Here we report the creation of novel heterojunction devices based on perovskites and two-dimensional (2D) crystals by taking advantage of the layered characteristic of lead iodide (PbI2) and vapor phase intercalation. We show a graphene/perovskite/graphene vertical stack can deliver a highest photoresponsivity of ~950 A/W and photoconductive gain of ~2200, and a graphene/WSe2/perovskite/graphene heterojunction can display a high on/off ratio (~10^6) transistor behavior with distinct gate-tunable diode characteristics and open-circuit voltages. Such unique perovskite-2D heterostructures have significant potential for future optoelectronic research and can enable broad possibilities with compositional tunability of organohalide perovskites and the versatility offered by diverse 2D materials.

cond-mat.mtrl-sci↗

arXiv2015

Understanding the Timed Distributed Trace of a Partially Synchronous System at Runtime

It has gained broad attention to understand the timed distributed trace of a cyber-physical system at runtime, which is often achieved by verifying properties over the observed trace of system execution. However, this verification is facing severe challenges. First, in realistic settings, the computing entities only have imperfectly synchronized clocks. A proper timing model is essential to the interpretation of the trace of system execution. Second, the specification should be able to express properties with real-time constraints despite the asynchrony, and the semantics should be interpreted over the currently-observed and continuously-growing trace. To address these challenges, we propose PARO - the partially synchronous system observation framework, which i) adopts the partially synchronous model of time, and introduces the lattice and the timed automata theories to model the trace of system execution; ii) adopts a tailored subset of TCTL to specify temporal properties, and defines the 3-valued semantics to interpret the properties over the currently-observed finite trace; iii) constructs the timed automaton corresponding to the trace at runtime, and reduces the satisfaction of the 3-valued semantics over finite traces to that of the classical boolean semantics over infinite traces. PARO is implemented over MIPA - the open-source middleware we developed. Performance measurements show the cost-effectiveness of PARO in different settings of key environmental factors.

cs.DC↗

arXiv2015

Almost Strong Consistency: "Good Enough" in Distributed Storage Systems

A consistency/latency tradeoff arises as soon as a distributed storage system replicates data. For low latency, modern storage systems often settle for weak consistency conditions, which provide little, or even worse, no guarantee for data consistency. In this paper we propose the notion of almost strong consistency as a better balance option for the consistency/latency tradeoff. It provides both deterministically bounded staleness of data versions for each read and probabilistic quantification on the rate of "reading stale values", while achieving low latency. In the context of distributed storage systems, we investigate almost strong consistency in terms of 2-atomicity. Our 2AM (2-Atomicity Maintenance) algorithm completes both reads and writes in one communication round-trip, and guarantees that each read obtains the value of within the latest 2 versions. To quantify the rate of "reading stale values", we decompose the so-called "old-new inversion" phenomenon into concurrency patterns and read-write patterns, and propose a stochastic queueing model and a "timed balls-into-bins model" to analyze them, respectively. The theoretical analysis not only demonstrates that "old-new inversions" rarely occur as expected, but also reveals that the read-write pattern dominates in guaranteeing such rare data inconsistencies. These are further confirmed by the experimental results, showing that 2-atomicity is "good enough" in distributed storage systems by achieving low latency, bounded staleness, and rare data inconsistencies.

cs.DC↗

arXiv2014

Towards barrier free contact to MoS2 using graphene electrodes

The two-dimensional (2D) layered semiconductors such as MoS2 have attracted tremendous interest as a new class of electronic materials. However, there is considerable challenge in making reliable contacts to these atomically thin materials. Here we present a new strategy by using graphene as back electrodes to achieve Ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily modified by gate potential to ensure a nearly perfect band alignment with MoS2. We demonstrate, for the first time, a transparent contact can be made to MoS2 with essentially zero contact barrier and linear output behaviour at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator-transition (MIT) can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barrier and only seen in four-terminal devices in conventional metal-contacted MoS2 system. With further passivation y born nitride encapsulation, we demonstrate a record high extrinsic (two-terminal) field effect mobility over 1300 cm2/Vs in MoS2.

cond-mat.mtrl-sci↗