arXiv subjects

Yu Kumagai

Publications and source records attributed to Yu Kumagai.

31 records · Page 2Linked to original sources

arXiv2020

Data-Mining Element Charges in Inorganic Materials

Oxidation states are well-established in chemical science teaching and research. We data-mine more than 168,000 crystallographic reports to find an optimal allocation of oxidation states to each element. In doing so we uncover discrepancies between text-book chemistry and reported charge states observed in materials. We go on to show how the oxidation states we recommend can significantly facilitate materials discovery and heuristic design of novel inorganic compounds.

cond-mat.mtrl-sci↗

arXiv2020

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$

Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflectance and Raman-scattering analysis to evaluate the electron transport governed by optical phonon scattering. A calculated room-temperature mobility on the order of $3.9 \times 10^2$ cm$^2$V$^{-1}$s$^{-1}$ is obtained, identifying cubic SrGeO$_3$ as one of the most promising TCOs. Employing classical phonon theory and a combined experimental-theoretical approach, a comprehensive analysis of the intrinsic electron mobility in the cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$, and SrTiO$_3$ is provided based on the magnitude of polarization and eigenfrequency of optically active phonons.

cond-mat.mtrl-sci↗

arXiv2020

Finite-size corrections for defect-involving vertical transitions in supercell calculations

A correction method for vertical transition levels (VTLs) involving defect states calculated with a supercell technique is formulated and its effectiveness is systematically verified with ten defects in prototypical materials: cubic-BN, GaN, MgO, and 3C-SiC. Without any corrections, the absolute errors are around 1 eV with moderate size supercells in most cases. In contrast, when our correction method is adopted, the absolute errors are reduced and become less than 0.12 eV in all the cases. Our correction scheme is general and will have the potential for wide application as it is adaptive for evaluating various quantities at fixed geometry, as represented by those relevant to the generalized Koopmans' theorem.

cond-mat.mtrl-sci↗

arXiv2019

Energetics and electronic structure of native point defects in $α$-Ga2O3

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects (Ga and O vacancies, interstitials, and a Ga vacancy-O vacancy pair) in corundum structured $α$-Ga2O3. Either under a Ga- or O-rich growth condition, the negatively-charged Ga vacancy and the positively-charged Ga interstitial on a site surrounded by six O atoms are dominant when the Fermi level approaches the conduction and valence band edges, respectively. These defects would compensate carrier electrons and holes, respectively. Ga-rich conditions relatively suppress the formation of the Ga vacancy and, therefore, are suited for extrinsic n-type doping of $α$-Ga2O3.

cond-mat.mtrl-sci↗

arXiv2019

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects and carbon clusters in the 4H polytype of silicon carbide (4H-SiC) under a carbon-rich condition. We applied a hybrid functional that reproduces the experimental bandgap of SiC well and offers reliable defect properties. For point defects, we investigated single vacancies, antisites, and interstitials of Si and C on relevant sites. For carbon clusters, we systematically introduced two additional C atoms into the perfect 4H-SiC lattice with and without removing Si atoms and performed structural optimization to identify stable defect configurations. We found that neutral Si antisites are energetically favorable among Si-point defects in a wide range of the Fermi level position around the intrinsic regime, whereas negatively-charged Si vacancies and a positively-charged Si interstitial on a site surrounded by three Si and three C atoms become favorable under n- and p-type conditions, respectively. For C-point defects, neutral C antisites are favorable under intrinsic and n-type conditions, whereas positively-charged C vacancies become favorable under p-type conditions. We also found that a di-carbon antisite is more favorable than a C-split interstitial, which is the most stable form of single C interstitials.

cond-mat.mtrl-sci↗

arXiv2018

Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

Zinc tin nitride (ZnSnN2) is attracting growing interest as a non-toxic and earth-abundant photoabsorber for thin-film photovoltaics. Carrier transport in ZnSnN2 and consequently cell performance are strongly affected by point defects with deep levels acting as carrier recombination centers. In this study, the point defects in ZnSnN2 are revisited by careful first-principles modeling based on recent experimental and theoretical findings. It is shown that ZnSnN2 does not have low-energy defects with deep levels, in contrast to previously reported results. Therefore, ZnSnN2 is more promising as a photoabsorber material than formerly considered.

cond-mat.mtrl-sci↗

arXiv2017

Unusual magnetic structure of high-pressure synthesized perovskites ACrO3(A=Sc, In, Tl)

Magnetic structures of metastable perovskites ScCrO3, InCrO3 and TlCrO3, stabilized under high-pressure and high-temperature conditions, have been studied by neutron powder diffraction. Similar to the other orthochromites LnCrO3 (Ln=lanthanide or Y), these materials crystallize into the orthorhombic structure with Pnma10 symmetry. The spin configuration of the metastable perovskites has been found to be C-type, contrasting with the G-type structure usually observed in LnCrO3. First-principles calculations demonstrate that the Ctype structure found in ScCrO3 and InCrO3 is attributed to a ferromagnetic (FM) nearest-neighbor interaction, while in TlCrO3, this type of magnetic ordering is stabilized by a strong next-nearest-neighbor antiferromagnetic (AFM) exchange. The spins in the C-type magnetic structure line up along the orthorhombic b-axis, yielding the Pnma magnetic symmetry. The dominant mechanism controlling this spin direction has been concluded to be the single ion anisotropy imposed by a uniaxial distortion of CrO6 octahedra.

cond-mat.str-el↗

arXiv2016

Band structure diagram paths based on crystallography

Systematic and automatic calculations of the electronic band structure are a crucial component of computationally-driven high-throughput materials screening. An algorithm, for any crystal, to derive a unique description of the crystal structure together with a recommended band path is indispensable for this task. The electronic band structure is typically sampled along a path within the first Brillouin zone including the surface in reciprocal space. Some points in reciprocal space have higher site symmetries and/or have higher constraints than other points regarding the electronic band structure and therefore are likely to be more important than other points. This work categorizes points in reciprocal space according to their symmetry and provides recommended band paths that cover all special wavevector (k-vector) points and lines necessarily and sufficiently. Points in reciprocal space are labeled such that there is no conflict with the crystallographic convention. The k-vector coefficients of labeled points, which are located at Brillouin zone face and edge centers as well as vertices, are derived based on a primitive cell compatible with the crystallographic convention, including those with axial ratio-dependent coordinates. Furthermore, we provide an open-source implementation of the algorithms within our SeeK-path python code, to allow researchers to obtain k-vector coefficients and recommended band paths in an automated fashion. Finally, we created a free online service to compute and visualise Brillouin Zone, labeled k-points and suggested band paths for any crystal structure, that we made available at http://www.materialscloud.org/tools/seekpath/ .

cond-mat.mtrl-sci↗

arXiv2015

Categorization of surface polarity from a crystallographic approach

With ab initio codes that employ three-dimensional periodic boundary conditions, the slab-and-vacuum model has proven invaluable for the derivation of energetic, atomistic, and electronic properties of materials. Within this approach, polar and nonpolar slabs require different levels of treatment, as any polar instability must be compensated on a case-by-case basis in the former. This article proposes an efficient algorithm based on isometries to identify whether a slab with the given surface orientation would be intrinsically polar, and if not, to obtain information on where to cleave the bulk crystal to obtain a stoichiometric nonpolar slab and whether reconstruction is necessary to generate a stoichiometric slab that is not polar.

cond-mat.mtrl-sci↗

arXiv2014

Electrostatics-based finite-size correction for first-principles point defect calculations

Finite-size corrections for charged defect supercell calculations typically consist of image-charge and potential alignment corrections. A wide variety of schemes for both corrections have been proposed for decades. Regarding the image-charge correction, Freysoldt, Neugebauer, and Van de Walle (FNV) recently proposed a novel method that enables us to accurately estimate the correction energy a posteriori through alignment of the defect-induced potential to the model charge potential [Freysoldt et al., Phys. Rev. Lett. 102, 016402 (2009)]. This method, however, still has two issues in practice. Firstly, it uses planar-averaged potential for determining the potential offset, which cannot be readily applied to relaxed system. Secondly, the long-range Coulomb interaction is assumed to be screened by a macroscopic dielectric constant. This is valid only for cubic systems and can bring forth huge errors for defects in anisotropic materials. In this study, we use the atomic site electrostatic potential as a potential marker instead of the planar-averaged potential, and extend the FNV scheme by adopting the point charge model in an anisotropic medium for estimating long-range interactions. We also revisit the conventional potential alignment correction and show that it is fully included in the image-charge correction and therefore unnecessary. In addition, we show that the potential alignment corresponds to a part of first-order and full of third-order image-charge correction; thus the third-order image-charge contribution is absent after the potential alignment. Finally, a systematic assessment of the accuracy of the extended FNV correction scheme is performed for a wide range of material classes. The defect formation energies calculated using around 100-atom supercells are successfully corrected even after atomic relaxation within a few tenths of eV compared to those in the dilute limit.

cond-mat.mtrl-sci↗

arXiv2012

Observation of persistent centrosymmetricity in the hexagonal manganite family

The controversy regarding the ferroelectric behavior of hexagonal InMnO$_3$ is resolved by using a combination of x-ray diffraction (XRD), piezoresponse force microscopy (PFM), second harmonic generation (SHG), and density functional theory (DFT). While XRD data show a symmetry-lowering unit-cell tripling, which is also found in the multiferroic hexagonal manganites of $P6_3cm$ symmetry, PFM and SHG do not detect ferroelectricity at ambient or low temperature, in striking contrast to the behavior in the multiferroic counterparts. We propose instead a centrosymmetric $P\bar{3}c$ phase as the ground state structure. Our DFT calculations reveal that the relative energy of the ferroelectric and nonferroelectric structures is determined by a competition between electrostatics and oxygen-$R$-site covalency, with an absence of covalency favoring the ferroelectric phase.

cond-mat.mtrl-sci↗

arXiv2012

Structural Domain Walls in Polar Hexagonal Manganites

We present a microscopic first-principles study of the neutral structural domain walls (DWs) in the multiferroic hexagonal manganites, which have been shown to exhibit cross-couplings between ferroelectricity and struc- tural antiphase. We find that, in contradiction with previously proposed models, the interlocked antiphase- ferroelectric domain walls have approximately zero width, and their energy is lower than that of antiphase-only or ferroelectric-only domain walls. Furthermore, we show that the ferroelectric-only and antiphase-only DWs are superpositions of interlocked antiphase ferroelectric (AP+FE) DWs and intermediate domains inevitably exist through the DWs. Our results shed light on the question of why only AP+FE DWs are observed and how the topological defects emerge in polar hexagonal manganites.

cond-mat.mtrl-sci↗

arXiv2011

Anisotropic conductance at improper ferroelectric domain walls

Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental friendliness. Recently, the interfaces between transition-metal oxides have revealed striking phenomena such as insulator-metal transitions, magnetism, magnetoresistance, and superconductivity. Such oxide interfaces are usually produced by sophisticated layer-by-layer growth techniques, which can yield high quality, epitaxial interfaces with almost monolayer control of atomic positions. The resulting interfaces, however, are fixed in space by the arrangement of the atoms. Here we demonstrate a route to overcoming this geometric limitation. We show that the electrical conductance at the interfacial ferroelectric domain walls in hexagonal ErMnO3 is a continuous function of the domain wall orientation, with a range of an order of magnitude. We explain the observed behaviour using first-principles density functional and phenomenological theories, and relate it to the unexpected stability of head-to-head and tail-to-tail domain walls in ErMnO3 and related hexagonal manganites. Since the domain wall orientation in ferroelectrics is tunable using modest external electric fields, our finding opens a degree of freedom that is not accessible to spatially fixed interfaces.

cond-mat.str-el↗