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Yu Yan

Publications and source records attributed to Yu Yan.

82 records · Page 5Linked to original sources
arXiv2020

Index Selection for NoSQL Database with Deep Reinforcement Learning

We propose a new approach of NoSQL database index selection. For different workloads, we select different indexes and their different parameters to optimize the database performance. The approach builds a deep reinforcement learning model to select an optimal index for a given fixed workload and adapts to a changing workload. Experimental results show that, Deep Reinforcement Learning Index Selection Approach (DRLISA) has improved performance to varying degrees according to traditional single index structures.

cs.DB↗
arXiv2020

RikiNet: Reading Wikipedia Pages for Natural Question Answering

Reading long documents to answer open-domain questions remains challenging in natural language understanding. In this paper, we introduce a new model, called RikiNet, which reads Wikipedia pages for natural question answering. RikiNet contains a dynamic paragraph dual-attention reader and a multi-level cascaded answer predictor. The reader dynamically represents the document and question by utilizing a set of complementary attention mechanisms. The representations are then fed into the predictor to obtain the span of the short answer, the paragraph of the long answer, and the answer type in a cascaded manner. On the Natural Questions (NQ) dataset, a single RikiNet achieves 74.3 F1 and 57.9 F1 on long-answer and short-answer tasks. To our best knowledge, it is the first single model that outperforms the single human performance. Furthermore, an ensemble RikiNet obtains 76.1 F1 and 61.3 F1 on long-answer and short-answer tasks, achieving the best performance on the official NQ leaderboard

cs.CL↗
arXiv2019

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.

physics.app-ph↗
arXiv2017

Effect of Notch Structure on Magnetic Domain Movement in Planar Nanowires

We present the direct observation of magnetic domain motion in permalloy nanowires with notches using a wide-field Kerr microscopy technique. The domain wall motion can be modulated by the size and shape of the notch structure in the nanowires. It is demonstrated that the coercive fields can be tuned by modulating the notches. The experimental results are consistent with the micro-magnetic simulation results. The relationship between the notch angle and the domain nuclease are also studied. This work is useful for the design and development of the notch-based spintronic devices.

cond-mat.mes-hall↗
arXiv2016

Elementary specific spin and orbital moments of ultrathin CoFeB amorphous films on GaAs(100)

Nanoscale CoFeB amorphous films have been synthesized on GaAs(100) and studied with X-ray magnetic circular dichroism (XMCD) and transmission electron microscopy (TEM). We have found that the ratios of the orbital to spin magnetic moments of both the Co and Fe in the ultrathin amorphous film have been enhanced by more than 300% compared with those of the bulk crystalline Co and Fe, and in specifically, a large orbital moment of 0.56*10^-6 B from the Co atoms has been observed and at the same time the spin moment of the Co atoms remains comparable to that of the bulk hcp Co. The results indicate that the large uniaxial magnetic anisotropy (UMA) observed in the ultrathin CoFeB film on GaAs(100) is related to the enhanced spin-orbital coupling of the Co atoms in the CoFeB. This work offers experimental evidences of the correlation between the UMA and the elementary specific spin and orbital moments in the CoFeB amorphous film on the GaAs(100) substrate, which is significant for spintronics applications.

cond-mat.mtrl-sci↗
arXiv2007

The Scalar Curvature Deformation Equation on Locally Conformally Flat Manifolds

We study the equation $Δ_g u -\frac{n-2}{4(n-1)}R(g)u+Ku^p=0 (1+ζ\leq p \leq \frac{n+2}{n-2})$ on locally conformally flat compact manifolds $(M^n,g)$. We prove the following: (i) When the scalar curvature $R(g)>0$ and the dimension $n \geq 4$, under suitable conditions on $K$, all positive solutions $u$ have uniform upper and lower bounds; (ii) When the scalar curvature $R(g)\equiv 0$ and $n \geq 5$, under suitable conditions on $K$, all positive solutions $u$ with bounded energy have uniform upper and lower bounds. We also give an example to show that the energy bound condition for the uniform estimates in math.DG/0602636 is necessary.

math.DG↗
arXiv2006

Some Compactness Results Related to Scalar Curvature Deformation

Motivated by the prescribing scalar curvature problem, we study the equation $Δ_g u +Ku^p=0 (1+ζ\leq p \leq \frac{n+2}{n-2})$ on locally conformally flat manifolds $(M,g)$ with $R(g)=0$. We prove that when $K$ satisfies certain conditions and the dimension of $M$ is 3 or 4, any solution $u$ of this equation with bounded energy has uniform upper and lower bounds. Similar techniques can also be applied to prove that on 4-dimensional scalar positive manifolds the solutions of $Δ_gu-\frac{n-2}{4(n-1)}R(g)u+Ku^p=0, K>0, 1+ζ\leq p \leq \frac{n+2}{n-2}$ can only have simple blow-up points.

math.DG↗