arXiv subjects

Yu Yun

Publications and source records attributed to Yu Yun.

At least 19 recordsLinked to original sources

arXiv2025

Persistent Interfacial Topological Hall Effect Demonstrating Electrical Readout of Topological Spin Structures in Insulators

Conventional topological Hall effects (THE) require conducting magnets, leaving insulating systems largely inaccessible. Here we introduce the interfacial topological Hall effect (ITHE), where the noncoplanar spin textures of insulating magnets are imprinted onto an adjacent heavy metal via the magnetic proximity effect (MPE) and detected electrically. In Pt/h-LuFeO3 bilayers, h-LuFeO3 hosts a topological spin structure robust against high magnetic fields, arising from a 120{\deg} triangular spin lattice with small spin canting that yields nontrivial topology but minimal magnetization. This generates a giant Hall response in Pt up to 0.5% of the longitudinal resistivity and a Hall-conductivity/magnetization ratio above 2 V^{-1}, clearly distinguishable from the spin Hall Hanle effect background. Field- and temperature-dependent analysis further reveals that Pt nanoclusters inherit topological textures from h-LuFeO3 via MPE. Unlike the conventional THE narrow peak-and-dip features, ITHE in Pt/h-LuFeO3 persists across a broad magnetic field range up to 14 T, demonstrating the exceptional stability of the underlying topological spin structure. This establishes ITHE as a powerful and sensitive probe for topological magnetism in ultrathin insulating films and paves the way for new spintronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface

The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfacial structures since they are decided by the most stable atomic bonding. In this work, we report strong tunability of the epitaxial interface of improper ferroelectric hexagonal ferrites deposited on spinel ferrites. The selection of two interface types, related by a 90 deg rotation of in-plane epitaxial relations and featured by disordered and hybridized reconstructions respectively, can be achieved by growth conditions, stacking sequences, and spinel compositions. While the disordered type suppresses the primary K3 structure distortion and ferroelectricity in hexagonal ferrites, the hybridized type is more coherent with the distortion with minimal suppression. This tunable interfacial structure provides critical insight on controlling interfacial clamping and may offer a solution for the long-standing problem of practical critical thickness in improper ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2025

Antiferroelectricity with metastable polar state from Kittel model

We have revisited the Kittel model that describes antiferroelectricity (AFE) in terms of two sublattices of spontaneous polarization with antiparallel couplings. By constructing the comprehensive phase diagram including the antiferroelectric, ferroelectric, and paraelectric phases in the parameter space, we identified an AFE phase with stable antipolar states and metastable polar state (SAMP) due to the weak coupling between sublattices. We found that the metastability of the polar state in SAMP phase could lead to apparent remanent polarization, depending on the measurement timescale. This explains the observed ferroelectric behavior of orthorhombic hafnia, which is predicted to be antipolar by density functional theories.

cond-mat.mtrl-sci↗

arXiv2024

Recent Progress on Multiferroic Hexagonal Rare-Earth Ferrites (h-RFeO3, R = Y,Dy-Lu)

Multiferroic hexagonal rare-earth ferrites (h-RFeO3, R=Sc, Y, and rare earth), in which the improper ferroelectricity and canted antiferromagnetism coexist, have been advocated as promising candidates to pursue the room-temperature multiferroics, because of strong spin-spin interaction. The strong interactions between the ferroic orders and the structural distortions are appealing for high-density, energy-efficient electronic devices. Over the past decade, remarkable advances in atomic-scale synthesis, characterization, and material modeling enable the significant progresses in the understanding and manipulation of ferroic orders and their couplings in h-RFeO3 thin films. These results reveal a physical picture of rich ferroelectric and magnetic phenomena interconnected by a set of structural distortions and spin-lattice couplings, which provides guidance for the control of ferroic orders down to the nano scale and the discovery of novel physical phenomena. This review focus on state-of-the-art studies in complex phenomena related to the ferroelectricity and magnetism as well as the magnetoelectric couplings in multiferroic h-RFeO3, based on mostly the recent experimental efforts, aiming to stimulate fresh ideas in this field.

cond-mat.mtrl-sci↗

arXiv2024

Improper flexoelectricity in hexagonal rare-earth ferrites

Flexoelectricity is a universal effect that generates electric polarization due to broken inversion symmetry caused by local strain gradient. The large strain gradient at nanoscale makes flexo-electric effects, especially in nanoscopic ferroelectric materials, promising in sensors, actuator, energy harvesting, and memory applications. In this work, we studied flexoelectricity in hexagonal ferrites h-YbFeO3, an improper ferroelectric expected to have weak piezoelectricity and low sensitivity to depolarization field, which are advantageous for studying flexoelectric effects. We show that in h-YbFeO3 epitaxial thin films, strain gradient on the order of 10^6 m-1 occurs near grain boundaries and edge dislocation, which has a significant impact on the non-polar K3 structural distortion that induces spontaneous polarization. The phenomenological model based on the Landau theory of improper ferroelectricity suggests an indirect flexoelectric effect on the order of 10 nC/m in h-YbFeO3, which is substantially larger than the expectation from Kogan mechanism. These results reveal a novel microscopic mechanism of coupling between strain gradient and polarization mediated by structural distortion, which we call improper flexoelectricity.

cond-mat.mtrl-sci↗

arXiv2024

Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO$_3$

The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO$_3$. We have directly resolved the atomic structure of a sharp antiphase boundary (APB) in YbFeO$_3$ thin films using a combination of aberration-corrected scanning transmission electron microscopy (STEM) and total energy calculations based on density-functional theory (DFT). We find the presence of a layer of FeO$_6$ octahedra at the APB that bridge the adjacent domains. STEM imaging shows a reversal in the direction of polarization on moving across the APB, which DFT calculations confirm is structural in nature as the polarization reversal reduces the distortion of the FeO$_6$ octahedral layer at the APB. Such APBs in hexagonal perovskites are expected to serve as domain-wall pinning sites and hinder ferroelectric switching of the domains.

cond-mat.mtrl-sci↗

arXiv2024

Antiferroelectric Hafnia Down to the 2D Limit

Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for energy storage, solid-state cooling, and memory technologies; however, these materials are scarce, and their scalability remains largely unexplored. In this work, we demonstrate that single-crystalline hafnia, a lead-free CMOS-compatible material, exhibits antiferroelectricity under compressive-strain conditions. We observe antiparallel sublattice polarization and stable double-hysteresis in single-crystalline (111)-oriented epitaxial La-doped hafnia films grown on yttrium-stabilized zirconia and show that the antipolar orthorhombic phase of hafnia adheres to the Kittel model of antiferroelectricity. Notably, compressive strain strengthens the antiferroelectric order in thinner La-doped hafnia films, achieving an unprecedented 850 C ordering temperature in the two-dimensional limit, highlighting hafnia's potential for advanced antiferroelectric devices.

cond-mat.mtrl-sci↗

arXiv2024

Insights into Chemical and Structural Order at Planar Defects in a Functional Oxide Using Multislice Electron Ptychography

Switchable order parameters in ferroic materials are essential for functional electronic devices, yet disruptions of the ordering can take the form of planar boundaries or defects that exhibit distinct properties. Characterizing the structure of these boundaries is challenging due to their confined size and three-dimensional nature. Here, a chemical anti-phase boundary in the highly ordered double perovskite \ce{Pb2MgWO6} is investigated using multislice electron ptychography. The boundary is revealed to be inclined along the electron beam direction with a finite width of chemical intermixing. Additionally, regions at and near the boundary exhibit antiferroelectric-like displacements, contrasting with the predominantly paraelectric matrix. Spatial statistics and density functional theory calculations further indicate that despite their higher energy, chemical anti-phase boundaries form due to kinetic constraints during growth, with extended antiferroelectric-like distortions induced by the chemically frustrated environment in the proximity of the boundary. The three-dimensional imaging provides critical insights into the interplay between local chemistry and the polar environment, elucidating the role of anti-phase boundaries and their associated confined structural distortions and offering new opportunities for engineering ferroic thin films.

cond-mat.mtrl-sci↗

arXiv2023

Dual mechanisms for transient capacitance anomaly in improper ferroelectrics

The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage of the polarizations switching respectively. Using a phenomenological model, we show that the early-stage negative capacitance is likely due to the inhomogeneous switching involving nucleation and domain wall motion, while the anomaly at the late stage, which appears to be a reminiscent negative capacitance is the manifestation of the thermodynamically unstable part of the free-energy landscape in the homogeneous switching. The complex free-energy landscape in hexagonal ferrites may be the key to cause the abrupt change in polarization switching speed and the corresponding anomaly. These results reconcile the two seemingly conflicting mechanisms in the polarization switching and highlight their different roles at different stages. The unique energy-landscape in hexagonal ferrites that reveals the dual switching mechanism suggests the promising application potential in terms of negative capacitance.

cond-mat.mtrl-sci↗

arXiv2023

Improper ferroelectricity in ultrathin hexagonal ferrites film

The suppression of ferroelectricity in ultrathin films of improper ferroelectric hexagonal ferrites or manganites has been attributed to the effect of interfacial clamping, however, the quantitative understanding and related phenomenological model are still lacking. In this work, we report the paraelectric-to-ferroelectric phase transition of epitaxial h-ScFeO3 films with different thickness through in-situ reflection high-energy electron diffraction (RHEED). Based on the interfacial clamping model and the Landau theory, we show that the thickness-dependence of the ferroelectric Curie temperature can be understood in terms of the characteristic length of interfacial clamping layer and the bulk Curie temperature. Furthermore, we found that the critical thickness of improper ferroelectricity is proportional to the characteristic length of interfacial clamping layer. These results reveal the essential role of mechanical clamping from interface on the improper ferroelectricity of hexagonal ferrites or manganites, and could serve as the guidance to achieve robust improper ferroelectricity in ultrathin films.

cond-mat.mtrl-sci↗

arXiv2021

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high density of unavoidable structural defects of the HfO2-based ferroelectrics, obscuring the intrinsic ferroelectricity inherited from the crystal space group of bulk HfO2. Here, we demonstrate the intrinsic ferroelectricity in Y-doped HfO2 films of high crystallinity. Contrary to the common expectation, we show that in the 5% Y-doped HfO2 epitaxial thin films, high crystallinity enhances the spontaneous polarization up to a record-high 50 {\mu}C/cm2 value at room temperature. The high spontaneous polarization persists at reduced temperature, with polarization values consistent with our theoretical predictions, indicating the dominant contribution from the intrinsic ferroelectricity. The crystal structure of these films reveals the Pca21 orthorhombic phase with a small rhombohedral distortion, underlining the role of the anisotropic stress and strain. These results open a pathway to controlling the intrinsic ferroelectricity in the HfO2-based materials and optimizing their performance in applications.

cond-mat.mtrl-sci↗

arXiv2021

Textured organic ferroelectric films from physical vapor deposition and amorphous-to-crystalline transition

Crystallization is a key for ferroelectricity which is a collective behavior of microscopic electric dipoles. On the other hand, uncontrolled crystallization leads to uneven morphology and random crystal orientations, which undermines the application potential of ferroelectric thin films. In this work, we introduce a film fabrication method of low-temperature physical vapor deposition followed by restrained crystallization, with electrical properties monitored in real-time by in situ measurements. This method was adopted to fabricate films of 2-methylbenzimidazole (MBI), whose molecule crystals are proton-transfer type biaxial ferroelectrics and tend to grow into a hedgehog-shaped spherulites morphology. The in situ measurements confirm that the crystallization, corresponding to a clear transition of physical properties, occurs dominantly during post-deposition warming. This enables the fabrication of micron-thick films in disk-shaped morphology with one polarization axis aligned along the out-of-plane direction, while the measured spontaneous polarization and coercive field are comparable to the single-crystal values. These results mark an important advancement of film growth that is expected to benefit widely the fabrication of molecular materials films whose functional properties hinge on crystallization to achieve desirable morphology and crystallinity.

cond-mat.mtrl-sci↗

arXiv2021

Colossal intrinsic exchange bias in epitaxial CoFe2O4/Al2O3 thin films

In this work, we demonstrate a massive intrinsic exchange bias (3 kOe) in epitaxial CoFe2O4(111) thin films deposited on Al2O3(0001) substrates. This exchange bias is indicative of intrinsic exchange or a ferromagnetic material combined with an antiferromagnet. The analysis of structure, magnetism and electronic states corroborate that there is an interfacial layer CoO between the CoFe2O4(111) thin film and the Al2O3(0001) substrate. The power-law thickness dependence of the intrinsic exchange bias verifies its interfacial origin. This work suggests interfacial engineering can be an effective route for achieving large exchange bias.

cond-mat.mtrl-sci↗

arXiv2020

Magnetoelectric coupling and decoupling in multiferroic hexagonal YbFeO3 thin films

The coupling between ferroelectric and magnetic orders in multiferroic materials and the nature of magnetoelectric (ME) effects are enduring experimental challenges. In this work, we have studied the response of magnetization to ferroelectric switching in thin-film hexagonal YbFeO3, a prototypical improper multiferroic. The bulk ME decoupling and potential domain-wall ME coupling were revealed using x-ray magnetic circular dichroism (XMCD) measurements with in-situ ferroelectric polarization switching. Our Landau theory analysis suggests that the bulk ME-coupled ferroelectric switching path has a higher energy barrier than that of the ME-decoupled path; this extra barrier energy is also too high to be reduced by the magneto-static energy in the process of breaking single magnetic domains into multi-domains. In addition, the reduction of magnetization around the ferroelectric domain walls predicted by the Landau theory may induce the domain-wall ME coupling in which the magnetization is correlated with the density of ferroelectric domain walls. These results provide important experimental evidence and theoretical insights into the rich possibilities of ME couplings in hexagonal ferrites, such as manipulating the magnetic states by an electric field.

cond-mat.mtrl-sci↗

arXiv2019

Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures

The experimental observation of quantum anomalous Hall effect (QAHE) in magnetic topological insulators has stimulated enormous interest in condensed-matter physics and materials science. For the purpose of realizing high-temperature QAHE, several material candidates have been proposed, among which the interface states in the CdO/ferromagnetic insulator heterostructures are particularly interesting and favorable for technological applications. Here, we report the experimental observation of the interfacial ferromagnetism and anomalous Hall effect in the Fe3O4/CdO/Fe3O4 heterostructures grown via oxide molecular-beam epitaxy. Systematical variation of the CdO thickness reveals the interface ferromagnetism as the major cause for the observed planar magnetoresistance and anomalous Hall effect. Our results might pave the way to engineer oxide interface states for the exploration of QAHE towards exotic quantum-physical phenomena and potential applications.

cond-mat.mtrl-sci↗

arXiv2018

Role of La doping for Topological Hall Effect in Epitaxial EuO Films

We report the critical role of La doping in the topological Hall effect observed in LaxEu1-xO thin films (~ 50 nm) grown by molecular beam epitaxy. When the La doping exceeds 0.036, topological Hall effect emerges, which we attribute to the formation of magnetic skyrmions. Besides, the La doping is found to play a critical role in determining the phases, densities, and sizes of the skyrmions in the LaxEu1-xO thin films. The maximum region of the skyrmion phase diagram is observed on the La0.1Eu0.9O thin film. As the La doping increases, the skyrmion density increases while the skyrmion size decreases. Our findings demonstrate the important role of La doping for the skyrmions in EuO films, which could be important for future studies of magnetic skyrmions in Heisenberg ferromagnets.

cond-mat.mtrl-sci↗

arXiv2017

The Role of Oxygen in Ionic Liquid Gating on 2D Cr2Ge2Te6: a Non-Oxide Material

Ionic liquid gating can markedly modulate the materials' carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in ionic liquid gating effect is still unclear. Here, we perform the ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr2Ge2Te6. Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect (< 5 % difference), which suggests the electrostatic field effect as the mechanism on non-oxide materials. Moreover, our results show that the ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO2.

cond-mat.mtrl-sci↗

arXiv2017

Observation of long phase-coherence length in epitaxial La-doped CdO thin films

The search for long electron phase coherence length, which is the length that an electron can keep its quantum wave-like properties, has attracted considerable interest in the last several decades. Here, we report the long phase coherence length of ~ 3.7 micro meters in La-doped CdO thin films at 2 K. Systematical investigations of the La doping and the temperature dependences of the electron mobility and the electron phase coherence length reveal contrasting scattering mechanisms for these two physical properties. Furthermore, these results show that the oxygen vacancies could be the dominant scatters in CdO thin films that break the electron phase coherence, which would shed light on further investigation of phase coherence properties in oxide materials.

cond-mat.mtrl-sci↗