arXiv subjects

Yu-Chuan Lin

Publications and source records attributed to Yu-Chuan Lin.

17 recordsLinked to original sources

arXiv2026

Collective quantum state at the atomic limit

Collective quantum states are often associated with extended systems, where spatially extensive degrees of freedom enable emergent many-body behavior; whether such strongly correlated states survive at atomic dimensions remains a fundamental question. Tomonaga-Luttinger liquids provide a paradigmatic example of one-dimensional collective quantum matter characterized by spin-charge separation. Using low-temperature scanning tunneling microscopy and spectroscopy, we directly visualize quantized collective modes in atomically confined mirror twin boundary segments of monolayer WSe2. Distinct standing-wave branches associated with fractionalized spin and charge excitations persist in segments as short as one nanometer, establishing the atomic-scale confinement limit of Luttinger-liquid behavior. These ultrashort segments form a new class of many-body quantum dots whose discrete spectra arise from confined collective bosonic modes rather than single-particle electron states. When assembled into ordered chains, inter-dot coupling reshapes electron-like fundamental states while collective spin/charge excitations remain largely intact, revealing distinct coupling responses of emergent many-body modes. Our results demonstrate that collective quantum matter can persist and exhibit fundamentally distinct coupling behavior at atomic length scales, establishing a novel platform for engineering strongly correlated quantum phases from atomically confined building blocks.

cond-mat.mes-hall↗

arXiv2025

Vibration-assisted tunneling through single Au adatoms on two-dimensional WSe2

Scanning tunneling microscopy (STM) at 5 K was used to study individual Au atoms adsorbed on the surface of a WSe2 layer grown on epitaxial graphene. In line with theoretical predictions, scanning tunneling spectroscopy measurements reveal that the weakly bound adatom gives rise to an electronic state within the energy band gap of the WSe2 layer. Adatoms in different surface locations show different gap-state energy values that follow a random distribution around the Fermi level of the sample with a standard deviation of ~50 meV. The location-dependent shift is attributed to spatial variations in disorder potential. Tunneling via the gap state is accompanied by vibrational excitations as apparent from pronounced sideband peaks in the conductance spectra with Poisson-distributed intensities indicating significant electron-phonon coupling with a Huang-Rhys factor of S=2.8. STM tunneling through single Au adatoms on two-dimensional WSe2 constitutes a model case of resonant double-barrier tunneling accompanied by strong coupling to vibrational degrees of freedom.

cond-mat.mes-hall↗

arXiv2025

Atom identification in bilayer moire materials with Gomb-Net

Moire patterns in van der Waals bilayer materials complicate the analysis of atomic-resolution images, hindering the atomic-scale insight typically attainable with scanning transmission electron microscopy. Here, we report a method to detect the positions and identities of atoms in each of the individual layers that compose twisted bilayer heterostructures. We developed a deep learning model, Gomb-Net, which identifies the coordinates and atomic species in each layer, effectively deconvoluting the moire pattern. This enables layer-specific mapping of quantities like strain and dopant distributions, unlike other commonly used segmentation models which struggle with moire-induced complexity. Using this approach, we explored the Se atom substitutional site distribution in a twisted fractional Janus WS2-WS2(1-x)Se2x heterostructure and found that layer-specific implantation sites are unaffected by the moire pattern's local energetic or electronic modulation. This advancement enables atom identification within material regimes where it was not possible before, opening new insights into previously inaccessible material physics.

cond-mat.mtrl-sci↗

arXiv2025

Deep UV Silicon Polaritonic Metasurfaces for Enhancing Biomolecule Autofluorescence and Two-Dimensional Material Double-Resonance Raman Scattering

High-performance DUV spectroscopy drives advancements in biomedical research, clinical diagnosis, and material science. Existing DUV resonant nanostructures face instability and photoluminescent noise challenges. We propose robust Si metasurfaces leveraging polaritonic resonances, a unique property driven by interband transitions, for enhanced nanophotonic sensing. Our polaritonic Kerker-type void metasurface enables double-resonance Raman scattering to analyze 2D semiconductors, improves biomolecule autofluorescence, and offers superior stability. This scalable platform unlocks versatile applications in interdisciplinary DUV spectroscopy and emerging nanomaterials research.

physics.optics↗

arXiv2024

Experimental signature of layer skyrmions and implications for band topology in twisted WSe2 bilayers

Transition metal dichalcogenide (TMD) twisted homobilayers have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discovery of fractional Chern insulator (FCI) states in twisted MoTe2 and Chern insulators (CI) and unconventional superconductivity in twisted WSe2 (tWSe2). In these systems, nontrivial topology in the strongly layer-hybridized regime can arise from a spatial patterning of interlayer tunneling amplitudes and layer-dependent potentials that yields a lattice of layer skyrmions. Here we report on experimental signatures of skyrmion textures in the layer degree of freedom of Rhombohedral-stacked (R-stacked) tWSe2 homobilayers. This observation is based on scanning tunneling spectroscopy that separately resolves the Gamma-valley and K-valley moir\'e electronic states. We show that Gamma-valley states are subjected to a moir\'e potential with an amplitude of ~ 120 meV. At ~150 meV above the Gamma-valley, the K-valley states are subjected to a weaker moir\'e potential of ~30 meV. Most significantly, we reveal opposite layer polarizations of the K-valley at the MX and XM sites within the moir\'e unit cell, confirming the theoretically predicted layer skyrmion texture. The dI/dV mappings allow the parameters that enter the continuum model of moir\'e bands in twisted TMD bilayers to be determined experimentally, further establishing a direct correlation between the shape of the LDOS profile in real space and the topology of topmost moir\'e band.

cond-mat.mes-hall↗

arXiv2023

Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2

Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge doping and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as the Re concentration approaches 2 atom%, there is significant clustering of Re in the MoS2. Ab Initio calculations indicate that the transition from isolated Re atoms to Re clusters increases the ionization energy of Re dopants, thereby reducing Re-doping efficacy. Using photoluminescence spectroscopy, we show that Re dopant clustering creates defect states that trap photogenerated excitons within the MoS2 lattice. These results provide insight into how the local concentration of metal dopants affect carrier density, defect formation, and exciton recombination in TMDs, which can aid the development of future TMD-based devices with improved electronic and photonic properties.

cond-mat.mtrl-sci↗

arXiv2023

Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (< 250 {\deg}C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 {\deg}C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS2 and aBN-encapsulated double-gated monolayer (ML) MoS2 field-effect transistors to evaluate the impact of aBN dielectric environment on MoS2 optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics.

cond-mat.mtrl-sci↗

arXiv2023

Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides

The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS$_2$ by scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM). By substrate chemical gating different charge states of sulfur vacancies (Vac$_\text{S}$) and substitutional rhenium dopants (Re$_\text{Mo}$) can be stabilized. Vac$_\text{S}^{-1}$ as well as Re$_\text{Mo}^{0}$ and Re$_\text{Mo}^{-1}$ exhibit local lattice distortions and symmetry-broken defect orbitals attributed to a Jahn-Teller effect (JTE) and pseudo-JTE, respectively. By mapping the electronic and geometric structure of single point defects, we disentangle the effects of spatial averaging, charge multistability, configurational dynamics, and external perturbations that often mask the presence of local symmetry breaking.

cond-mat.mtrl-sci↗

arXiv2023

Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2

Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10x. Ab initio models indicate the free-energy of sulfur-vacancy formation is increased along the MoS2 growth-front when Re is introduced, resulting in an improved stoichiometry. Remarkably, defect photoluminescence (PL) commonly seen in as-grown MOCVD MoS2 is suppressed by 6x at 0.05 atomic percent (at.%) Re and completely quenched with 1 at.% Re. Furthermore, Re-MoS2 transistors exhibit up to 8x higher drain current and enhanced mobility compared to undoped MoS2 because of the improved material quality. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.

cond-mat.mtrl-sci↗

arXiv2020

Acquisition and Analysis of Scanning Tunneling Spectroscopy Data $-$ WSe$_2$ Monolayer

Acquisition and analysis is described for scanning tunneling spectroscopy data acquired from a monolayer of WSe$_2$ grown on epitaxial graphene on SiC. Curve fitting of the data is performed, in order to deduce band-edge energies. In addition to describing the details of the theoretical curves used for the fitting, the acquisition and analysis methods are also discussed within the larger context of the historical development of scanning tunneling spectroscopy techniques.

cond-mat.mes-hall↗

arXiv2020

Flatbands and Mechanical Deformation Effects in the Moir\'e Superlattice of MoS$_2$-WSe$_2$ Heterobilayers

It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($\theta=0^\circ$), associated with flat bands in the Brillouin zone of the moir\'e pattern formed due to the lattice mismatch of the two layers. Peaks in the local density of states and confinement in a MoS$_2$/WSe$_2$ system was qualitatively described only considering local stacking arrangements, which cause band edge energies to vary spatially. In this work, we report the presence of large in-plane strain variation across the moir\'e unit cell of a $\theta=0^\circ$ MoS$_2$/WSe$_2$ heterobilayer, and show that inclusion of strain variation and out-of-plane displacement in density functional theory calculations greatly improves their agreement with the experimental data. We further explore the role of twist-angle by showing experimental data for a twisted MoS$_2$/WSe$_2$ heterobilayer structure with twist angle of $\theta=15^\circ$, that exhibits a moir\'e pattern but no confinement.

cond-mat.mtrl-sci↗

arXiv2018

Unique excitonic effects in tungsten disulphide monolayers on two-layer graphene

Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulphide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS2 can be effectively tuned by the number of supporting graphene layers. Integrating WS2 monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to one order of magnitude higher compared to WS2 supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin layered heterostructures.

cond-mat.mtrl-sci↗

arXiv2017

Quantum-Confined Electronic States arising from Moir\'e Pattern of MoS2-WSe2 Hetero-bilayers

A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatures of 5 and 80 K. A moir\'e pattern is observed, arising from lattice mismatch of 3.7% between the MoS2 and WSe2. Significant energy shifts are observed in tunneling spectra observed at the maxima of the moir\'e corrugation, as compared with spectra obtained at corrugation minima, consistent with prior work. Furthermore, at the minima of the moir\'e corrugation, sharp peaks in the spectra at energies near the band edges are observed, for spectra acquired at 5 K. The peaks correspond to discrete states that are confined within the moir\'e unit cells. Conductance mapping is employed to reveal the detailed structure of the wave functions of the states. For measurements at 80 K, the sharp peaks in the spectra are absent, and conductance maps of the band edges reveal little structure.

cond-mat.mes-hall↗

arXiv2016

Magnetic brightening and control of dark excitons in monolayer WSe2

Monolayer transition metal dichalcogenide (TMDC) crystals, as direct-gap materials with unusually strong light-matter interaction, have attracted much recent attention. In contrast to the initial understanding, the minima of the conduction band are predicted to be spin split. Because of this splitting and the spin-polarized character of the valence bands, the lowest-lying excitonic states in WX2 (X=S, Se) are expected to be spin-forbidden and optically dark. To date, however, there has been no direct experimental probe of these dark band-edge excitons, which strongly influence the light emission properties of the material. Here we show how an in-plane magnetic field can brighten the dark excitonic states and allow their properties to be revealed experimentally in monolayer WSe2. In particular, precise energy levels for both the neutral and charged dark excitons were obtained and compared with ab-initio calculations using the GW-BSE approach. Greatly increased emission and valley lifetimes were observed for the brightened dark states as a result of their spin configuration. These studies directly probe the excitonic spin manifold and provide a new route to tune the optical and valley properties of these prototypical two-dimensional semiconductors.

cond-mat.mes-hall↗

arXiv2016

Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations

In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe$_2$ states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe$_2$ electron reflectivity.

cond-mat.mes-hall↗

arXiv2015

Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics.

cond-mat.mtrl-sci↗

arXiv2012

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

cond-mat.mtrl-sci↗