Yu. A. Matveyev | Searcharxiv

arXiv2016

An Approximate Backpropagation Learning Rule for Memristor Based Neural Networks Using Synaptic Plasticity

We describe an approximation to backpropagation algorithm for training deep neural networks, which is designed to work with synapses implemented with memristors. The key idea is to represent the values of both the input signal and the backpropagated delta value with a series of pulses that trigger multiple positive or negative updates of the synaptic weight, and to use the min operation instead of the product of the two signals. In computational simulations, we show that the proposed approximation to backpropagation is well converged and may be suitable for memristor implementations of multilayer neural networks.

cs.NE↗

arXiv2015

Grain-size dependent high-temperature ferromagnetism of polycrystalline MnxSi1-x (x~0.5) films

We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth. It is found that studied films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature TC ~ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the layered polycrystalline structure with a self-organizing grain size distribution. The HT FM order is originated from the bottom interfacial nanocrystalline layer, while the upper layer possesses the low temperature (LT) type of FM order with TC = 46 K, gives essential contribution to the magnetization below 50 K and is homogeneous on the nanometer size scale. Under these conditions, AHE changes its sign from positive to negative at T < 30 K. We attribute observed properties to the synergy of self-organizing distribution of MnxSi1-x crystallites in size and peculiarities of defect-induced FM order in PLD grown polycrystalline MnxSi1-x (x~0.5) films.

cond-mat.mes-hall↗