Searcharxiv⌕ Search

arXiv subjects

Yu. V. Usov

Publications and source records attributed to Yu. V. Usov.

At least 37 records · Page 2Linked to original sources

Study of the process $e^+e^- \to ηπ^0γ$ in the energy range $\sqrt{s} = \mbox{1.05-2.00}$ GeV with the SND detector

The process $e^+e^-\toηπ^0γ$ is studied in the center-of-mass energy range 1.05-2.00 GeV using data with an integrated luminosity of 94.5 pb$^{-1}$ collected by the SND detector at the VEPP-2000 $e^+e^-$ collider. The $e^+e^-\toηπ^0γ$ cross section is measured for the first time. It is shown that the dominant mechanism of this reaction is the transition through the $ωη$ intermediate state. The measured cross section of the subprocess $e^+e^-\toωη\toηπ^0γ$ is consistent with previous measurements in the $e^+e^-\toπ^+π^-π^0η$ mode. It is found, with a significance of 5.6$σ$, that the process $e^+e^-\toηπ^0γ$ is not completely described by hadronic vector-pseudoscalar intermediate states. The cross section of this missing contribution, which can originate from radiation processes, e. g. $e^+e^-\to a_{0}(1450)γ$, is measured. It is found to be 15-20 pb in the wide energy range from 1.3 to 1.9 GeV.

hep-ex↗

SND electromagnetic calorimeter time measurement and its applications

The SND is a non-magnetic detector deployed at the VEPP-2000 $e^+e^-$ collider (BINP, Novosibirsk) for hadronic cross-section measurements in the center of mass energy region below 2 GeV. The important part of the detector is a three-layer hodoscopic electromagnetic calorimeter (EMC) based on NaI(Tl) counters. Until the recent EMC spectrometric channel upgrade, only the energy deposition measurement in counters was possible. A new EMC signal shaping and digitizing electronics based on FADC allows us to obtain also the event time structure. The new electronics and supporting software, including digital signal processing algorithms, are used for data taking in the ongoing experiment. We discuss the amplitude and time extraction algorithms, the new system performance on experimental events and physical analysis applications.

physics.ins-det↗

Search for direct production of the $f_1(1285)$ resonance in $e^+e^-$ collisions

A search for direct production of the $f_1(1285)$ resonance in $e^+e^-$ annihilation is performed with the SND detector at the VEPP-2000 $e^+e^-$ collider. The analysis is based on data with an integrated luminosity of 15.1 pb$^{-1}$ accumulated in the center-of-mass energy range 1.2--1.4 GeV. Two $e^+e^-\to f_1(1285)$ candidate events are found at the peak of the resonance and zero events beyond the resonance. The significance of the $e^+e^-\to f_1(1285)$ signal is $2.5σ$. The cross section at the maximum of the resonance is found to be $σ(e^+e^-\to f_1)=45^{+33}_{-24}$ pb. The corresponding branching fraction $B(f_1(1285)\to e^+e^-)=(5.1^{+3.7}_{-2.7})\times 10^{-9}$. We consider this result as a first indication of the process $e^+e^-\to f_1(1285)$. The measured branching fraction is consistent with the theoretical prediction.

hep-ex↗

Ripplocation in graphite nanoplatelets during sonication assisted liquid phase exfoliation

Defects induced by liquid-phase exfoliation of graphite using sonication were studied. It was shown that localized impact by cavitation shock waves can produce bulk ripplocations and various types of dislocations in graphite nanoplatelets. Formation of ripples is more pronounced in large aspect (length/width) ratio platelets or nanobelts. Quasi-periodical ripple systems were observed in many nanobelts after sonication. Mechanism of formation of ripples and dislocations during sonication was proposed. Surprisingly, fast high-temperature processing was found to anneal most of defects. This is consistent with our observations that defects associated with ripplocations are strongly localized and thus can be fast annealed.

cond-mat.mes-hall↗

The formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb layers

Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb and Fe targets in a vacuum. Transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal a strong dependence of the phase composition of the (In,Fe)Sb compound on the growth temperature. An increase of the latter from 220C to 300C leads to a coalescence of Fe atoms and formation of a secondary crystalline phase in the (In,Fe)Sb layer with a total Fe content of ca. 10 at. %. At the same time, the Ga0.8Fe0.2Sb layers obtained at 220C and 300C are single-phase. The separate In0.8Fe0.2Sb and Ga0.8Fe0.2Sb layers grown on i-GaAs at 220C are DMS with Curie temperatures of ca. 190 K and 170 K, respectively. The three-layer p-i-n diode (In,Fe)Sb/GaAs/(Ga,Fe)Sb structure grown on a GaAs substrate at 220C with a Fe content of ca. 10 at. % in the single-phase (In,Fe)Sb and (Ga,Fe)Sb layers has a rather high crystalline quality and can be considered as a prototype of a bipolar spintronic device based on Fe-doped III-V semiconductors.

physics.app-ph↗

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in the valence band and the channel associated with electron transport in the Mn impurity band) and that the ferromagnetic properties are determined by the electrons localized at the allowed states within the Mn impurity band. The results also help to understand the features of structures with the Mn δ-layer nearby the quantum well.

physics.app-ph↗

Precise measurement of $R_{\text{uds}}$ and $R$ between 1.84 and 3.72 GeV at the KEDR detector

The present work continues a series of the KEDR measurements of the $R$ value that started in 2010 at the VEPP-4M $e^+e^-$ collider. By combining new data with our previous results in this energy range we measured the values of $R_{\text{uds}}$ and $R$ at nine center-of-mass energies between 3.08 and 3.72 GeV. The total accuracy is about or better than $2.6\%$ at most of energy points with a systematic uncertainty of about $1.9\%$. Together with the previous precise $R$ measurement at KEDR in the energy range 1.84-3.05 GeV, it constitutes the most detailed high-precision $R$ measurement near the charmonium production threshold.

hep-ex↗

Measurement of the $e^+e^- \to π^0γ$ cross section in the energy range 1.075--2 GeV at SND

The process $e^+e^- \to π^0γ$ is studied with the SND detector at the VEPP-2000 $e^+e^-$ collider. Basing on data with an integrated luminosity of 41 pb$^{-1}$ recorded in 2010-2012 we measure the $e^+e^- \to π^0γ$ cross section in the center-of-mass energy range from 1.075 up to 2 GeV. In the range 1.4-2.0 GeV the process $e^+e^- \to π^0γ$ is studied for the first time.

hep-ex↗

Search for the process $\mathbf{e^+e^- \toη}$

A search for the rare decay $η\rightarrow e^+e^-$ is performed using the inverse process $e^+e^- \rightarrow η$ in the decay mode $η\toπ^0π^0π^0 $. We analyze data with an integrated luminosity of 654 nb$^{-1} $ accumulated at the VEPP-2000 $e^+e^-$ collider with the SND detector at the center-of-mass energy $E=m_ηc ^2\approx 548 $ MeV, and set the upper limit $ {\cal B} (η\rightarrow e^+ e^-) < 7 \times 10^{-7} $ at the 90\% confidence level.

hep-ex↗

Measurement of $Γ_{ee}\times\mathcal{B}_{μμ}$ for $ψ(2S)$ meson

The product of the electronic width of the $ψ(2S)$ meson and the branching fraction of its decay to the muon pair was measured in the $e^{+}e^{-} \to ψ(2S) \to μ^{+}μ^{-}$ process using nine data sets corresponding to an integrated luminosity of about 6.5 pb$^{-1}$ collected with the KEDR detector at the VEPP-4M electron-positron collider: \[ Γ_{ee}\times\mathcal{B}_{μμ} = 19.3 \pm 0.3 \pm 0.5 ~\text{eV}. \] Adding the previous KEDR results on hadronic and leptonic channels, the values of the $ψ(2S)$ electronic width were obtained under two assumptions: either with the assumption of lepton universality \[ Γ_{ee} = 2.279 \pm 0.015 \pm 0.042 ~\text{keV} \] or without it, summing up hadronic and three independent leptonic channels: \[ Γ_{ee} = 2.282 \pm 0.015 \pm 0.042 ~\text{keV}. \]

hep-ex↗

Measurement of $Γ_{ee}(J/ψ)$ with KEDR detector

The product of the electronic width of the $J/ψ$ meson and the branching fractions of its decay to hadrons and electrons has been measured using the KEDR detector at the VEPP-4M $e^+e^-$ collider. The obtained values are: $Γ_{ee}(J/ψ) = 5.550 \pm 0.056 \pm 0.089 \, \text{keV}, $ $Γ_{ee}(J/ψ) \cdot \mathcal{B}_\text{hadrons}(J/ψ) = 4.884 \pm 0.048 \pm 0.078 \, \text{keV}, $ $Γ_{ee}(J/ψ) \cdot \mathcal{B}_{ee}(J/ψ) = 0.3331 \pm 0.0066 \pm 0.0040 \, \text{keV}.$ The uncertainties shown are statistical and systematic, respectively. Using the result presented and the world-average value of the electronic branching fraction, one obtains the total width of the $J/ψ$ meson: $Γ= 92.94 \pm 1.83 \, \text{keV}.$ These results are consistent with the previous experiments.

hep-ex↗

Measurement of the $e^+e^- \to ηπ^+π^-$ cross section with the SND detector at the VEPP-2000 collider

The $e^+e^- \to ηπ^+π^-$ cross section is measured at the SND detector in the $η$ decay mode $η\to 3π^0$. The analysis is based on the data sample with an integrated luminosity of 32.7 pb$^{-1}$ collected at the VEPP-2000 $e^+e^-$ collider in the center-of-mass energy range $\sqrt{s}=1.075-2.000$ GeV. The data obtained in the $η\to 3π^0$ decay mode are found to be in agreement with the previous SND measurements in the $η\to γγ$ mode. Therefore the measurements in the two modes are combined.

hep-ex↗

High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor

The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second phase. The observation of the hysteretic magnetoresistance curves at temperatures up to 300 K reveals that the Curie point is above room temperature. The resonant character of magnetic circular dichroism confirms the intrinsic ferromagnetism in the (In,Fe)Sb layers. We suggest that the ferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparently is determined by the mechanism of superexchange interaction between Fe atoms (This work was presented at the XXI Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v.1, p. 195), http://nanosymp.ru/UserFiles/Symp/2017_v1.pdf).

cond-mat.mtrl-sci↗

Measurement of $R$ between 1.84 and 3.05 GeV at the KEDR detector

Using the KEDR detector at the VEPP-4M $e^+e^-$ collider, we have determined the values of $R$ at thirteen points of the center-of-mass energy between 1.84 and 3.05 GeV. The achieved accuracy is about or better than $3.9\%$ at most of the energy points with a systematic uncertainty less than $2.4\%$.

hep-ex↗

Measurement of the $\mathbf{e^+e^-\to K^+K^-}$ cross section in the energy range $\mathbf{\sqrt{s}=1.05-2.0}$ GeV

The $e^+e^-\to K^+K^-$ cross section is measured in the center-of-mass energy range $1.05-2.00$ GeV at the SND detector. The measurement is based on data with an integrated luminosity of 35 pb$^{-1}$ collected at the VEPP-2000 $e^+e^-$-collider. The obtained results are consistent with the previous most accurate data obtained in the BABAR experiment and have a comparable accuracy.

hep-ex↗

Study of the process $e^+e^-\toωηπ^0$ in the energy range $\sqrt{s} <2$ GeV with the SND detector

The process $e^+e^-\toωηπ^0$ is studied in the energy range $1.45-2.00$ GeV using data with an integrated luminosity of 33 pb$^{-1}$ accumulated by the SND detector at the $e^+e^-$ collider VEPP-2000. The $e^+e^-\toωηπ^0$ cross section is measured for the first time. The cross section has a threshold near 1.75 GeV. Its value is about 2 nb in the energy range $1.8-2.0$ GeV. The dominant intermediate state for the process $e^+e^- \to ωηπ^0$ is found to be $ωa_0(980)$.

hep-ex↗