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Yu. Yu. Illarionov

Publications and source records attributed to Yu. Yu. Illarionov.

2 recordsLinked to original sources

Interactions-controlled magnetotransport in two-dimensional massless-massive fermion mixtures

The presence of two types of holes, namely the Dirac holes and the massive holes, in a two-dimensional sample exposed to an external permanent magnetic field leads to the emergence of the temperature and magnetic field-dependent contribution to the resistivity due to their interactions. Taking a HgTe-based two-dimensional semimetal as a testbed, we develop a theoretical model describing the role of interactions between the degenerate massive and massless Dirac particles for the magnetoconductivity and resistivity in the presence of a classical magnetic field. If only the Dirac holes are present in the system, the magnetoconductivity acquires a finite interaction-induced contribution, which would vanish for the parabolic spectrum. It demonstrates $T^4\ln(1/T)$ behavior at low temperatures for short-range interhole interaction potential, and $T^2$-like behavior in the case of long-range interhole interaction potential. However, the magnetoresistivity and the Hall effect are not affected by the Dirac holes interparticle correlations in the lowest order of interparticle interaction. In contrast to this, the presence of two types of holes provides a finite contribution to the magnetoconductivity, magnetoresistivity, and the classical Hall effect resistivity. The temperature behavior of the magnetoconductivity here is $\sim T^2$ in the case of the short-range constant interparticle interaction potential and $T^2\ln(1/T)$ for the bare unscreened Coulomb interaction. A classically strong magnetic field suppresses the interaction-induced corrections to magnetoresistivity of massless-massive hole gas mixture.

cond-mat.mes-hall

Mapping diverse hysteresis dynamics in scaled MoS$_2$ FETs using the universal method derived from TCAD modeling

Field-effect transistors (FETs) based on 2D materials have already reached the stage of trial FAB integration. However, reliability limitations caused by various defects present a serious obstacle for their smooth way forward, especially when scaling the device geometries. Still the ongoing research is mostly focused on pure technology aspects, while reliability is often recalled only when showing a randomly measured gate transfer curve to manifest that the hysteresis is "negligible".In fact the hysteresis dynamics contain unique fingerprints of various mechanisms which may coexist or cancel each other, being more complex in scaled FETs, for instance because of simultaneous interaction of defects with the channel and top gate in thin insulators. To fill this gap, here by doing TCAD modeling for nanoscale MoS$_2$/HfO$_2$ FETs we introduce the universal hysteresis mapping method which can correctly capture commonly measured diverse hysteresis dynamics such as conventional clockwise (CW) and counterclockwise (CCW) hysteresis, as well as CW/CCW switching and time separation. Next we extend this method to bias-temperature instabilities (BTI) and show a clear correlation between complex hysteresis dynamics and abnormal BTI recovery. Finally, we validate our mapping method using available experimental data for MoS$_2$ FETs and demonstrate that it provides far more accurate results than a conventional constant current extraction of the hysteresis width, being also usable if a CCW hysteresis is caused by mobile ions.

cond-mat.mtrl-sci