arXiv subjects

Yuan Ping

Publications and source records attributed to Yuan Ping.

60 records · Page 4Linked to original sources

arXiv2018

Fundamental Principles for Calculating Charged Defect Ionization Energies in Ultrathin Two-Dimensional Materials

Defects in 2D materials are becoming prominent candidates for quantum emitters and scalable optoelectronic applications. However, several physical properties that characterize their behavior, such as charged defect ionization energies, are difficult to simulate with conventional first-principles methods, mainly because of the weak and anisotropic dielectric screening caused by the reduced dimensionality. We establish fundamental principles for accurate and efficient calculations of charged defect ionization energies and electronic structure in ultrathin 2D materials. We propose to use the vacuum level as the reference for defect charge transition levels (CTLs) because it gives robust results insensitive to the level of theory, unlike commonly used band edge positions. Furthermore, we determine the fraction of Fock exchange in hybrid functionals for accurate band gaps and band edge positions of 2D materials by enforcing the generalized Koopmans' condition of localized defect states. We found the obtained fractions of Fock exchange vary significantly from 0.2 for bulk $h$-BN to 0.4 for monolayer $h$-BN, whose band gaps are also in good agreement with experimental results and calculated GW results. The combination of these methods allows for reliable and efficient prediction of defect ionization energies (difference between CTLs and band edge positions). We motivate and generalize these findings with several examples including different defects in monolayer to few-layer hexagonal boron nitride ($h$-BN), monolayer MoS$_2$ and graphane. Finally, we show that increasing the number of layers of $h$-BN systematically lowers defect ionization energies, mainly through CTLs shifting towards vacuum, with conduction band minima kept almost unchanged.

cond-mat.mtrl-sci↗

arXiv2018

Combining Landau Zener Theory and Kinetic Monte Carlo Sampling for Small Polaron Mobility of Doped BiVO4

Transition metal oxides such as \ce{BiVO4} are promising materials as photoelectrodes in solar-to-fuel conversion applications. However, their performance is limited by the low carrier mobility (especially electron mobility) due to the formation of small polarons. Recent experimental studies show improved carrier mobility and conductivity by atomic dopings. We studied the small polaron hopping mobility in pristine and doped \ce{BiVO4} by combining Landau-Zener theory and kinetic Monte Carlo (kMC) simulation fully from first-principles, and investigated the effect of dopant-polaron interactions on the mobility. We found polarons are spontaneously formed at V in both pristine and Mo/W doped \ce{BiVO4}, which can only be described correctly by density function theory (DFT) with the Hubbard correction (DFT+U) or hybrid exchange-correlation functional but not local or semi-local functionals. We found DFT+U and dielectric dependant hybrid functional (DDH) give similar electron hopping barriers, which are also similar between the room temperature monoclinic phase and the tetragonal phase. The calculated electron mobility agrees well with experimental values, which is around $10^{-4}$ cm$^2$V$^{-1}$s$^{-1}$. We found the electron polaron transport in \ce{BiVO4} is neither fully adiabatic nor nonadiabatic, and the first and second nearest neighbor hoppings have significantly different adiabacity in spite of similar hopping barriers. We further computed polaron mobility in the presence of different dopants and showed that Cr substitution of V is an electron trap while Mo and W are "repulsive" centers, mainly due to the minimization of local lattice expansion by dopants and electron polarons. The dopants with "repulsive" interactions to polarons are promising for mobility improvement due to larger wavefunction overlap and delocalization of locally concentrated polarons.

cond-mat.mtrl-sci↗

arXiv2018

Plasmonics in Argentene

Two-dimensional materials exhibit a fascinating range of electronic and photonic properties vital for nanophotonics, quantum optics and emerging quantum information technologies. Merging concepts from the fields of ab initio materials science and nanophotonics, there is now an opportunity to engineer new photonic materials whose optical, transport, and scattering properties are tailored to attain thermodynamic and quantum limits. Here, we present first-principles calculations predicting that Argentene, a single-crystalline hexagonal close-packed monolayer of Ag, can dramatically surpass the optical properties and electrical conductivity of conventional plasmonic materials. In the low-frequency limit, we show that the scattering rate and resistivity reduce by a factor of three compared to the bulk three-dimensional metal. Most importantly, the low scattering rate extends to optical frequencies in sharp contrast to e.g. graphene, whose scattering rate increase drastically in the near-infrared range due to optical-phonon scattering. Combined with an intrinsically high carrier density, this facilitates highly-confined surface plasmons extending to visible frequencies. We evaluate Argentene across three distinct figures of merit, spanning the spectrum of typical plasmonic applications; in each, Argentene outperforms the state-of-the-art. This unique combination of properties will make Argentene a valuable addition to the two-dimensional heterostructure toolkit for quantum electronic and photonic technologies.

physics.app-ph↗

arXiv2018

Effect of Defects on the Small Polaron Formation and Transport Properties of Hematite from First-Principles Calculations

Hematite ($α$-Fe$_2$O$_3$) is a promising candidate as photoanode materials for solar-to-fuel conversion due to its favorable band gap for visible light absorption, its stability in an aqueous environment and its relatively low cost in comparison to other prospective materials. However, the small polaron transport nature in $α$-Fe$_2$O$_3$ results in low carrier mobility and conductivity, significantly lowering its efficiency from the theoretical limit. Experimentally, it has been found that the incorporation of oxygen vacancies and other dopants, such as Sn, into the material appreciably enhances its photo-to-current efficiency. Yet, no quantitative explanation has been provided to understand the role of oxygen vacancy or Sn-doping in hematite. We employed density functional theory to probe the small polaron formation in oxygen deficient hematite, N-doped as well as Sn-doped hematite. We computed the charged defect formation energies, the small polaron formation energy and hopping activation energies to understand the effect of defects on carrier concentration and mobility. This work provides us with a fundamental understanding regarding the role of defects on small polaron formation and transport properties in hematite, offering key insights into the design of new dopants to further improve the efficiency of transition metal oxides for solar-to-fuel conversion.

cond-mat.mtrl-sci↗

arXiv2017

First-principles Engineering of Charged Defects for Two-dimensional Quantum Technologies

Charged defects in 2D materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. Advancement of these technologies requires rational design of ideal defect centers, demanding reliable computation methods for quantitatively accurate prediction of defect properties. We present an accurate, parameter-free and efficient procedure to evaluate quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h-BN) for their charge transition levels, stable spin states and optical excitations. We identify $C_BN_V$ (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications.

cond-mat.mtrl-sci↗

arXiv2017

First-principles electrostatic potentials for reliable alignment at interfaces and defects

Alignment of electrostatic potential between different atomic configurations is necessary for first-principles calculations of band offsets across interfaces and formation energies of charged defects. However, strong oscillations of this potential at the atomic scale make alignment challenging, especially when atomic geometries change considerably from bulk to the vicinity of defects and interfaces. We introduce a method to suppress these strong oscillations by eliminating the deep wells in the potential at each atom. We demonstrate that this method considerably improves the system-size convergence of a wide range of first-principles predictions that depend on alignment of electrostatic potentials, including band offsets at solid-liquid interfaces, and formation energies of charged vacancies in solids and at solid surfaces in vacuum. Finally, we use this method in conjunction with continuum solvation theories to investigate energetics of charged vacancies at solid-liquid interfaces. We find that for the example of an NaCl (001) surface in water, solvation reduces the formation energy of charged vacancies by 0.5 eV: calculation of this important effect was previously impractical due to computational cost in molecular-dynamics methods.

physics.chem-ph↗