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Yuan Shui

Publications and source records attributed to Yuan Shui.

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ArtiCAD: Articulated CAD Assembly Design via Multi-Agent Code Generation

Parametric Computer-Aided Design (CAD) of articulated assemblies is essential for product development, yet generating these multi-part, movable models from high-level descriptions remains unexplored. To address this, we propose ArtiCAD, the first training-free multi-agent system capable of generating editable, articulated CAD assemblies directly from text or images. Our system divides this complex task among four specialized agents: Design, Generation, Assembly, and Review. One of our key insights is to predict assembly relationships during the initial design stage rather than the assembly stage. By utilizing a Connector that explicitly defines attachment points and joint parameters, ArtiCAD determines these relationships before geometry generation, effectively bypassing the limited spatial reasoning capabilities of current LLMs and VLMs. To further ensure high-quality outputs, we introduce validation steps in the generation and assembly stages, accompanied by a cross-stage rollback mechanism that accurately isolates and corrects design- and code-level errors. Additionally, a self-evolving experience store accumulates design knowledge to continuously improve performance on future tasks. Extensive evaluations on three datasets (ArtiCAD-Bench, CADPrompt, and ACD) validate the effectiveness of our approach. We further demonstrate the applicability of ArtiCAD in requirement-driven conceptual design, physical prototyping, and the generation of embodied AI training assets through URDF export.

cs.CV

Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor

Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 {\mu}B to 5.1 {\mu}B for the ground-state GN at an electric field strength of 3-10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.

cond-mat.mtrl-sci