arXiv subjects

Yuan-Ji Xu

Publications and source records attributed to Yuan-Ji Xu.

3 recordsLinked to original sources

arXiv2025

Importance of pressure-dependent electronic interactions and magnetic order on pressure-driven insulator-metal transitions in MnO and NiO

The pressure-driven insulator-metal transition is a crucial topic in condensed matter physics. However, even for the prototypical strongly correlated system, NiO, the critical pressure for transition remains debated. In this work, we evaluated the electronic interactions over a wide range of pressures based on our developed doubly-screened Coulomb correction method and investigated the effects of pressure-dependent electronic interactions and their interplay with magnetic order on the transition. As a validation of the method, we also performed calculations on MnO. The results show that the hybrid functional combined with pressure-dependent screening parameters reasonably describes the insulator-metal transition in MnO. The insulating band gap of antiferromagnetic (AFM) NiO also match well with experiments in both trend and value, which is better than the method using fixed parameters. Further calculations considering magnetic order indicate that as the electronic interactions weaken under pressure, the AFM state of NiO will no longer be stable, a phenomenon that was not observed in previous works. In addition, the results show that, compared with DFT+$U$ within the on-site Coulomb correction framework, the hybrid functional provides a more accurate description of the properties of MnO and NiO at high pressures, highlighting the key role of non-local effects. Our work provides a possible explanation for the long-standing discrepancies in NiO and offers guidance for the development of first-principles methods for correlated electron systems under pressure.

cond-mat.str-el↗

arXiv2023

Comparative study of first-principles approaches for effective Coulomb interaction strength $U_{\rm eff}$ between localized $f$-electrons: lanthanide metals as an example

As correlation strength has a key influence on the simulation of strongly correlated materials, many approaches have been proposed to obtain the parameter using first-principles calculations. However, the comparison of the different Coulomb strengths obtained using these approaches and an investigation of the mechanisms behind them are still needed. Taking lanthanide metals as an example, we research the factors that affect the effective Coulomb interaction strength, $U_{\rm eff}$, by local screened Coulomb correction (LSCC), linear response (LR) and constrained random-phase approximation (cRPA) in VASP. The $U^{\rm LSCC}_{\rm eff}$ value increases from 4.75 eV to 7.78 eV, $U^{\rm LR}_{\rm eff}$ is almost stable at about 6.0 eV (except for Eu, Er and Lu), and $U^{\rm cRPA}_{\rm eff}$ shows a two-stage decreasing trend in both light and heavy lanthanides. To investigate these differences, we established a scheme to analyze coexistence and competition between the orbital localization and the screening effect. We find that LSCC and cRPA are dominated by the orbital localization and the screening effect, respectively, whereas LR shows a balance of the competition between the two factors. Additionally, the performance of these approaches is influenced by different starting points from PBE and PBE+$U$, especially for cRPA. Our results provide useful knowledge for understanding the $U_{\rm eff}$ of lanthanide materials, and similar analyses can also be used in the research of other correlation strength simulation approaches.

cond-mat.mtrl-sci↗

arXiv2021

The first-principles research on the role of surface in the heavy fermion compound CeRh$_2$Si$_2$

In the heavy fermion materials, the characteristic energy scales of many exotic strongly correlated phenomena (Kondo effect, magnetic order, superconductivity, etc.) are at milli-electron-volt order, implying that the heavy fermion materials are surface sensitive. Here, we investigate the electronic structures for Si- and Ce-terminated surfaces of CeRh$_2$Si$_2$ by first-principles methods. Our research reveals three notable impacts of surface effects on electronic structures, which are consistent with recent angle-resolved photoemission spectroscopy (ARPES) experiments. Firstly, the relaxation of surface crystal structures changes the relative position of Fermi level, adjusts the dispersion of bands and enhances the Kondo resonance. Secondly, the decrease of the hybridization between the Ce-4$f$ and conduction electrons in the surface layer leads to a weaker Kondo resonance peak and the shift of spin-orbit bands. Thirdly, the variation of crystal electric field around surface Ce atoms affects the splitting of Kondo resonance peaks, and also pushes down the lower-Hubbard bands of surface 4$f$ electrons. Moreover, we find the characteristic of bulk's lower-Hubbard bands, which was overlooked in previous works. Our investigation suggests that these surface effects are potentially important and highlighted in the future researches on properties of strongly correlated materials.

cond-mat.str-el↗