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Yuan-Shan Zhang

Publications and source records attributed to Yuan-Shan Zhang.

3 recordsLinked to original sources

Electronic tuning of the soft-phonon transport anomaly in Ta$_2$Ni(S$_x$Se$_{1-x}$)$_5$

Ta$_2$NiSe$_5$ continues to be investigated for its phase transition at $T_\textrm{c}$ = 326 K, where it develops both an electronic gap and a distortion of its Ta/Ni chains. One intriguing feature at $T_\textrm{c}$ seen in thermal transport is the giant anisotropic scattering of phonons moving perpendicular to the chains, which is apparently associated with the softening of a transverse acoustic phonon, but whose microscopic origin and significance demand clarification. By tuning the normal-state band overlap/gap with S substitution, we uncover a close connection between this soft-phonon transport anomaly and underlying electronic instabilities: When Ta$_2$Ni(S$_x$Se$_{1-x}$)$_5$ approaches a band insulator at high $x$, and signatures of the electronic transition are suppressed, the soft-phonon transport anomaly concomitantly vanishes. Our results establish the following picture for the Ta$_2$Ni(S$_x$Se$_{1-x}$)$_5$ family: Near the S end, a sole lattice instability gives rise to a weak structural transition with $T_\textrm{c}$ approaching 130 K. Near the Se end, additional electronic instabilities boost $T_\textrm{c}$ up to 326 K and amplify experimental signatures of the transition. The strong interaction between electrons, holes, and the lattice is manifested as a soft-phonon transport anomaly accompanied by electronic fluctuations, which include excitonic and hybridization-gap fluctuations.

cond-mat.str-el↗

Substrate tuning of the structural and electronic transition in thin flakes of the excitonic insulator candidate Ta$_2$NiSe$_5$

Ta$_2$NiSe$_5$ continues to draw interest for its 326 K phase transition, whose dual electronic and structural nature reflects a complex interplay of electron-hole (excitonic) and electron-lattice interactions. Most studies that have attempted to decipher the relative importance of these interactions, particularly through charge transfer, have been limited to bulk samples. We utilized a thin-flake approach to modify the excitonic interactions in Ta$_2$NiSe$_5$ via an underlying film of Au. Using polarized Raman spectroscopy, we found that four layers of Ta$_2$NiSe$_5$ supported on conducting Au show a transition temperature that is both reduced by over 100 K and broadened due to an interfacial charge gradient effect, manifesting the presence of excitonic interactions. In contrast, four layers of Ta$_2$NiSe$_5$ supported on insulating Al$_2$O$_3$ show nearly bulk-like properties. We also report the development of an all-dry exfoliation and transfer protocol that generalizes substrate engineering for strongly correlated van der Waals materials.

cond-mat.str-el↗

Thermal transport signatures of the excitonic transition and associated phonon softening in the layered chalcogenide Ta$_2$NiSe$_5$

The layered compound $\mathrm{Ta_2NiSe_5}$ is a quasi-one-dimensional and narrow-gap semiconductor, which is proposed to undergo a transition to an excitonic insulator at $T_\mathrm{c}=326$ K. We found a clear anomaly at $T_\mathrm{c}$ in the in-plane thermal conductivities both parallel ($\parallel$ $a$) and perpendicular ($\parallel$ $c$) to the one-dimensional chains, $κ_\mathrm{a}$ and $κ_\mathrm{c}$. While $κ_\mathrm{a}$ shows a rapid decrease below $T_\mathrm{c}$, $κ_\mathrm{c}$ shows a pronounced V-shaped suppression centered at $T_\mathrm{c}$. We argue that the decrease of $κ_\mathrm{a}$ represents the suppression of the quasiparticle contribution below $T_\mathrm{c}$ due to excitonic condensation. On the other hand, the V-shaped suppression of $κ_\mathrm{c}$ comes from the enhanced phonon scattering by soft phonons associated with the monoclinic transition with momentum $\mathbf{q}\parallel c$. The continued suppression of $κ_\mathrm{c}$ up to an extremely high temperature above $T_\mathrm{c}$ suggests the persistence of phonon softening likely coupled to electronic, presumably excitonic, fluctuations.

cond-mat.str-el↗