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Yuanbo Zhang

Publications and source records attributed to Yuanbo Zhang.

57 records · Page 4Linked to original sources

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

When electrons are confined in two-dimensional (2D) materials, quantum mechanically enhanced transport phenomena, as exemplified by the quantum Hall effects (QHE), can be observed. Graphene, an isolated single atomic layer of graphite, is an ideal realization of such a 2D system. Here, we report an experimental investigation of magneto transport in a high mobility single layer of graphene. Adjusting the chemical potential using the electric field effect, we observe an unusual half integer QHE for both electron and hole carriers in graphene. Vanishing effective carrier masses is observed at Dirac point in the temperature dependent Shubnikov de Haas oscillations, which probe the 'relativistic' Dirac particle-like dispersion. The relevance of Berry's phase to these experiments is confirmed by the phase shift of magneto-oscillations, related to the exceptional topology of the graphene band structure.

cond-mat.mes-hall↗

Fabrication and Electric Field Dependent Transport Measurements of Mesoscopic Graphite Devices

We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 - 100 nm and lateral size $\sim$ 2 $μ$m are extracted from bulk. Mesoscopic graphite devices are fabricated from these samples for electric field dependent conductance measurements. Strong conductance modulation as a function of gate voltage is observed in the thinner crystallite devices. The temperature dependent resistivity measurements show more boundary scattering contribution in the thinner graphite samples.

cond-mat.mes-hall↗

Electric Field Modulation of Galvanomagnetic Properties of Mesoscopic Graphite

Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magneto-resistance and Hall resistance as a function of gate voltage is observed as sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov de Haas oscillations in magneto-resistance. The effective mass of electron and hole carriers has been measured from the temperature dependant behavior of these oscillations.

cond-mat.mes-hall↗