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Yuanda Gao

Publications and source records attributed to Yuanda Gao.

18 recordsLinked to original sources

Advancements in 3D Lane Detection Using LiDAR Point Clouds: From Data Collection to Model Development

Advanced Driver-Assistance Systems (ADAS) have successfully integrated learning-based techniques into vehicle perception and decision-making. However, their application in 3D lane detection for effective driving environment perception is hindered by the lack of comprehensive LiDAR datasets. The sparse nature of LiDAR point cloud data prevents an efficient manual annotation process. To solve this problem, we present LiSV-3DLane, a large-scale 3D lane dataset that comprises 20k frames of surround-view LiDAR point clouds with enriched semantic annotation. Unlike existing datasets confined to a frontal perspective, LiSV-3DLane provides a full 360-degree spatial panorama around the ego vehicle, capturing complex lane patterns in both urban and highway environments. We leverage the geometric traits of lane lines and the intrinsic spatial attributes of LiDAR data to design a simple yet effective automatic annotation pipeline for generating finer lane labels. To propel future research, we propose a novel LiDAR-based 3D lane detection model, LiLaDet, incorporating the spatial geometry learning of the LiDAR point cloud into Bird's Eye View (BEV) based lane identification. Experimental results indicate that LiLaDet outperforms existing camera- and LiDAR-based approaches in the 3D lane detection task on the K-Lane dataset and our LiSV-3DLane.

cs.CV

Ultrafast Graphene Light Emitter

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.

cond-mat.mes-hall

Electrical 2π phase control of infrared light in a 350nm footprint using graphene plasmons

Modulating the amplitude and phase of light is at the heart of many applications such as wavefront shaping, transformation optics, phased arrays, modulators and sensors. Performing this task with high efficiency and small footprint is a formidable challenge. Metasurfaces and plasmonics are promising , but metals exhibit weak electro-optic effects. Two-dimensional materials, such as graphene, have shown great performance as modulators with small drive voltages. Here we show a graphene plasmonic phase modulator which is capable of tuning the phase between 0 and 2π in situ. With a footprint of 350nm it is more than 30 times smaller than the 10.6$μ$m free space wavelength. The modulation is achieved by spatially controlling the plasmon phase velocity in a device where the spatial carrier density profile is tunable. We provide a scattering theory for plasmons propagating through spatial density profiles. This work constitutes a first step towards two-dimensional transformation optics for ultra-compact modulators and biosensing.

physics.app-ph

Electrical detection of hyperbolic phonon-polaritons in heterostructures of graphene and boron nitride

Light properties in the mid-infrared can be controlled at a deep subwavelength scale using hyperbolic phonons-polaritons (HPPs) of hexagonal boron nitride (h-BN). While propagating as waveguided modes HPPs can concentrate the electric field in a chosen nano-volume. Such a behavior is at the heart of many applications including subdiffraction imaging and sensing. Here, we employ HPPs in heterostructures of h-BN and graphene as new nano-optoelectronic platform by uniting the benefits of efficient hot-carrier photoconversion in graphene and the hyperbolic nature of h-BN. We demonstrate electrical detection of HPPs by guiding them towards a graphene pn-junction. We shine a laser beam onto a gap in metal gates underneath the heterostructure, where the light is converted into HPPs. The HPPs then propagate as confined rays heating up the graphene leading to a strong photocurrent. This concept is exploited to boost the external responsivity of mid-infrared photodetectors, overcoming the limitation of graphene pn-junction detectors due to their small active area and weak absorption. Moreover this type of detector exhibits tunable frequency selectivity due to the HPPs, which combined with its high responsivity paves the way for efficient high-resolution mid-infrared imaging.

physics.app-ph

Tuning quantum non-local effects in graphene plasmonics

The response of an electron system to electromagnetic fields with sharp spatial variations is strongly dependent on quantum electronic properties, even in ambient conditions, but difficult to access experimentally. We use propagating graphene plasmons, together with an engineered dielectric-metallic environment, to probe the graphene electron liquid and unveil its detailed electronic response at short wavelengths.The near-field imaging experiments reveal a parameter-free match with the full theoretical quantum description of the massless Dirac electron gas, in which we identify three types of quantum effects as keys to understanding the experimental response of graphene to short-ranged terahertz electric fields. The first type is of single-particle nature and is related to shape deformations of the Fermi surface during a plasmon oscillations. The second and third types are a many-body effect controlled by the inertia and compressibility of the interacting electron liquid in graphene. We demonstrate how, in principle, our experimental approach can determine the full spatiotemporal response of an electron system.

cond-mat.mes-hall

Ultra-confined acoustic THz graphene plasmons revealed by photocurrent nanoscopy

Terahertz (THz) fields are widely applied for sensing, communication and quality control. In future applications, they could be efficiently confined, enhanced and manipulated - well below the classical diffraction limit - through the excitation of graphene plasmons (GPs). These possibilities emerge from the strongly reduced GP wavelength, lp, compared to the photon wavelength, l0, which can be controlled by modulating the carrier density of graphene via electrical gating. Recently, GPs in a graphene-insulator-metal configuration have been predicted to exhibit a linear dispersion (thus called acoustic plasmons) and a further reduced wavelength, implying an improved field confinement, analogous to plasmons in two-dimensional electron gases (2DEGs) near conductive substrates. While infrared GPs have been visualised by scattering-type scanning near-field optical microscopy (s-SNOM), the real-space imaging of strongly confined THz plasmons in graphene and 2DEGs has been elusive so far - only GPs with nearly free-space wavelength have been observed. Here we demonstrate real-space imaging of acoustic THz plasmons in a graphene photodetector with split-gate architecture. To that end, we introduce nanoscale-resolved THz photocurrent near-field microscopy, where near-field excited GPs are detected thermoelectrically rather than optically. The on-chip GP detection simplifies GP imaging, as sophisticated s-SNOM detection schemes can be avoided. The photocurrent images reveal strongly reduced GP wavelengths (lp = l0/66), a linear dispersion resulting from the coupling of GPs with the metal gate below the graphene, and that plasmon damping at positive carrier densities is dominated by Coulomb impurity scattering. Acoustic GPs could thus strongly benefit the development of deep subwavelength-scale THz devices.

cond-mat.mes-hall

Frictional magneto-Coulomb drag in graphene double-layer heterostructure

Coulomb interaction between two closely spaced parallel layers of electron system can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few layer hexagonal boron nitride (hBN), we investigate density tunable magneto- and Hall-drag under strong magnetic fields. The observed large magneto-drag and Hall-drag signals can be related with Laudau level (LL) filling status of the drive and drag layers. We find that the sign and magnitude of the magneto- and Hall-drag resistivity tensor can be quantitatively correlated to the variation of magneto-resistivity tensors in the drive and drag layers, confirming a theoretical formula for magneto-drag in the quantum Hall regime. The observed weak temperature dependence and $\sim B^2$ dependence of the magneto-drag are qualitatively explained by Coulomb scattering phase-space argument.

cond-mat.mes-hall

Electron optics with ballistic graphene junctions

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Moreover ballistic transport over micron length scales at ambient temperature has been realized, providing an ideal platform to realize a new generation of device based on electron lensing. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snells law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing novel electron optics based on graphene pn junctions.

cond-mat.mes-hall

Thermoelectric detection of propagating plasmons in graphene

Controlling, detecting and generating propagating plasmons by all-electrical means is at the heart of on-chip nano-optical processing. Graphene carries long-lived plasmons that are extremely confined and controllable by electrostatic fields, however electrical detection of propagating plasmons in graphene has not yet been realized. Here, we present an all-graphene mid-infrared plasmon detector, where a single graphene sheet serves simultaneously as the plasmonic medium and detector. Rather than achieving detection via added optoelectronic materials, as is typically done in other plasmonic systems, our device converts the natural decay product of the plasmon---electronic heat---directly into a voltage through the thermoelectric effect. We employ two local gates to fully tune the thermoelectric and plasmonic behaviour of the graphene. High-resolution real-space photocurrent maps are used to investigate the plasmon propagation and interference, decay, thermal diffusion, and thermoelectric generation.

cond-mat.mes-hall

Near-field photocurrent nanoscopy on bare and encapsulated graphene

Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic device behaviour. Here, we present and apply opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can also be applied to encapsulated graphene/hexagonal boron nitride (h-BN) devices, where we observe strong charge build-up near the edges, and also address a device solution to this problem. The technique enables nanoscale characterization for a broad range of common graphene devices without the need of special device architectures or invasive graphene treatment.

cond-mat.mes-hall

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

physics.optics

Fractional fractal quantum Hall effect in graphene superlattices

The Hofstadter energy spectrum provides a uniquely tunable system to study emergent topological order in the regime of strong interactions. Previous experiments, however, have been limited to the trivial case of low Bloch band filling where only the Landau level index plays a significant role. Here we report measurement of high mobility graphene superlattices where the complete unit cell of the Hofstadter spectrum is accessible. We observe coexistence of conventional fractional quantum Hall effect (QHE) states together with the integer QHE states associated with the fractal Hofstadter spectrum. At large magnetic field, a new series of states appear at fractional Bloch filling index. These fractional Bloch band QHE states are not anticipated by existing theoretical pictures and point towards a new type of many-body state.

cond-mat.mes-hall

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cut-off frequency of 1.2 GHz.

physics.optics

Highly confined low-loss plasmons in graphene-boron nitride heterostructures

Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong light-matter interactions and nano-optoelectronic switches. While all of these great prospects require low damping, thus far strong plasmon damping was observed, with both impurity scattering and many-body effects in graphene proposed as possible explanations. With the advent of van der Waals heterostructures, new methods have been developed to integrate graphene with other atomically flat materials. In this letter we exploit near-field microscopy to image propagating plasmons in high quality graphene encapsulated between two films of hexagonal boron nitride (h-BN). We determine dispersion and particularly plasmon damping in real space. We find unprecedented low plasmon damping combined with strong field confinement, and identify the main damping channels as intrinsic thermal phonons in the graphene and dielectric losses in the h-BN. The observation and in-depth understanding of low plasmon damping is the key for the development of graphene nano-photonic and nano-optoelectronic devices.

cond-mat.mes-hall

Tunable Fractional Quantum Hall Phases in Bilayer Graphene

Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the charge neutrality point. In a quantizing magnetic field electron interactions can cause spontaneous symmetry breaking within the spin and valley degrees of freedom, resulting in quantum Hall states (QHS) with complex order. Here we report fractional quantum Hall states (FQHS) in bilayer graphene which show phase transitions that can be tuned by a transverse electric field. This result provides a model platform to study the role of symmetry breaking in emergent states with distinct topological order.

cond-mat.mes-hall

Enhanced Photodetection in Graphene-Integrated Photonic Crystal Cavity

We demonstrate the controlled enhancement of photoresponsivity in a graphene photodetector by coupling to slow light modes in a long photonic crystal linear defect cavity. Near the Brillouin zone (BZ) boundary, spectral coupling of multiple cavity modes results in broad-band photocurrent enhancement from 1530 nm to 1540 nm. Away from the BZ boundary, individual cavity resonances enhance the photocurrent eight-fold in narrow resonant peaks. Optimization of the photocurrent via critical coupling of the incident field with the graphene-cavity system is discussed. The enhanced photocurrent demonstrates the feasibility of a wavelength-scale graphene photodetector for efficient photodetection with high spectral selectivity and broadband response.

cond-mat.mes-hall

Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity

We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS$_2$ emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS$_2$ SE rate exceeding a factor of 70.

physics.optics

High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene

We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modulation of the cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. We also observe a controllable resonance wavelength shift close to 2 nm around a wavelength of 1570 nm and a Q factor modulation in excess of three. These observations allow cavity-enhanced measurements of the graphene complex dielectric constant under different chemical potentials, in agreement with a theoretical model of the graphene dielectric constant under gating. This graphene-based nanocavity modulation demonstrates the feasibility of high-contrast, low-power frequency-selective electro-optic nanocavity modulators in graphene-integrated silicon photonic chips.

physics.optics