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Yuanda Liu

Publications and source records attributed to Yuanda Liu.

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Engineering Hybrid Resonances in Nanophotonics

Hybridization of resonances is known to overcome inherent limitations of individual systems, enabling advanced functionalities and applications. Here we discuss hybrid plasmonic-Mie resonators that emerged recently as a promising direction in advancing nanophotonic structures by synergistically combining the strong near-field enhancement of plasmonic components with the low-loss, multipolar resonances of dielectric Mie elements. We review the recent progress in the field, encompassing the fundamental physical principles, structural design strategies, material platforms, computational optimization approaches, and representative device implementations. Our discussion starts by evaluating the complementary characteristics of plasmonic and Mie resonances followed by a description of the coupling between these resonances in order to boost light-matter interactions. Afterward, we explore the performance of efficient hybrid resonators for different application areas. Apart from the conventional metal-dielectric systems, we consider the recent class of epsilon-near-zero (ENZ) materials, which can provide unique advantages in terms of field localization, phase engineering, and energy flow management in the vicinity of zero-permittivity conditions, offering more flexibility in designing hybrid nano-optical devices. Lastly, we point out potential research avenues aiming to improve functional and efficient nanophotonic devices, especially those involving emerging topological material systems, such as Sb2Te3, Bi2Te3, Bi2Se3, combining plasmonic amplification, dielectric confinement, and spin-dependent optical behavior.

physics.optics

Weyl Semimetals: from Principles, Materials to Applications

Weyl semimetals have attracted significant interest in condensed matter physics and materials science, due to their unique electronic and topological properties. These characteristics not only deepen our understanding of fundamental quantum phenomena, but also make Weyl semimetals promising candidates for advanced applications in electronics, photonics, and spintronics. This review provides a systematic overview of the field, covering theoretical foundations, material synthesis, engineering strategies, and emerging device applications. We first outline the key theoretical principles and distinctive properties of Weyl semimetals, followed by an examination of recent advancements that enhance their functional versatility. Finally, we discuss the critical challenges hindering their practical implementation and explore future development directions, along with the potential for expanding and enhancing their existing range of applications. By integrating discussions of both opportunities and obstacles, this review offers a balanced perspective on current progress and future directions in Weyl semimetal research.

cond-mat.mtrl-sci

Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moir\'e heterobilayer

Localized interlayer excitons (LIXs) in two-dimensional moir\'e superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree with the experimental photoluminescence spectra of LIX in the moir\'e MoSe2/WSe2 heterobilayer. In particular, we find that the emission energy-lifetime correlation and the nonmonotonic power dependence of the lifetime agree well with the DAP IX model. Our results provide insight into the physical mechanism of LIX formation in moir\'e heterostructures and pave new directions for engineering interlayer exciton properties in moir\'e superlattices.

cond-mat.mes-hall

A room-temperature moir\'e interlayer exciton laser

Moir\'e superlattices in van der Waals heterostructures offer highly tunable quantum systems with emergent electronic and excitonic properties such as superconductivity, topological edge states, and moir\'e-trapped excitons. Theoretical calculations predicted the existence of the moir\'e potential at elevated temperatures; however, its impact on the optical properties of interlayer excitons (IXs) at room temperature is lacking, and the benefits of the moir\'e effects for lasing applications remain unexplored. We report that the moir\'e potential in a molybdenum disulfide/tungsten diselenide (MoS2/WSe2) heterobilayer system can significantly enhance light emission, elongate the IX lifetime, and modulate the IX emission energy at room temperature. By integrating a moir\'e superlattice with a silicon topological nanocavity, we achieve ultra-low-threshold lasing at the technologically important telecommunication O-band thanks to the significant moir\'e modulation. Moreover, the high-quality topological nanocavities facilitate the highest spectral coherence of < 0.1 nm linewidth among all reported two-dimensional material-based laser systems. Our findings not only open a new avenue for studying correlated states at elevated temperatures, but also enable novel architectures for integrated on-chip photonics and optoelectronics.

physics.optics

Room temperature nanocavity laser with interlayer excitons in 2D heterostructures

Atomically thin layered two dimensional (2D) material has provided a rich library for both fundamental research and device applications. One of the special advantages is that, bandgap engineering and controlled material response can be achieved by stacking different 2D materials. Recently several types of excitonic lasers have been reported based on Transition metal dichalcogenide (TMDC) monolayers, however, the emission is still the intrinsic energy bandgap of the monolayers and lasers harnessing the flexibility of Van der Waals heterostructures have not been demonstrated yet. Here, we report for the first time a room temperature interlayer exciton laser with MoS2/WSe2 heterostructures. The onset of lasing action was identified by a combination of distinct kink in the 'L-L' curve and the noticeable collapse of spectral linewidth. Different from visible emission of intralayer excitons for both MoS2 and WSe2, our interlayer exciton laser works in the infrared range, which is fully compatible with the well-established technologies in silicon photonics. Thanks to the long lifetime of interlayer excitons, the requirement of the cavity quality factor is relaxed by orders of magnitude. The demonstration of room temperature interlayer exciton laser might open new perspectives for the development of coherent light source with tailored optical properties on silicon photonics platform.

cond-mat.mes-hall

Electrically controllable router of interlayer excitons

Optoelectronic devices which allow rerouting, modulation and detection of the optical signals would be extremely beneficial for telecommunication technology. One of the most promising platforms for such devices are excitonic devices, as they offer very efficient coupling to light. Of especial importance are those based on indirect excitons, because of their long lifetime. Here we demonstrate excitonic transistor and router based on bilayer of WSe2. Due to their strong dipole moment, excitons in bilayer WSe2 can be controlled by transverse electric field. At the same time, unlike indirect excitons in artificially stacked heterostructures based on transition metal dichalcogenides - naturally stacked bilayer offers long exciton lifetime, smaller non-radiative losses, and are much simpler in fabrication.

physics.app-ph

Room temperature interlayer exciton valley polarization and valley Hall effect

For monolayer transition metal chalcogenides (TMDs), electrons and excitons in different valleys can be driven to opposite directions by the Berry curvature, serving as a valley-dependent effective magnetic field. In addition to monolayer TMDs, Van der Waals heterostructures provide an attractive platform for emerging valley physics and devices with superior physics properties. Interlayer excitons in TMD heterostructures have a long valley lifetime as compared to monolayer intralayer excitons. Here we report an interlayer exciton valley polarization and valley Hall effect in MoS2/WSe2 in room temperature. The separation for excitons with different valley index is observed with polarization-dependent photoluminescence mapping. The exciton separation is perpendicular to their transport directions. The valley Hall effect for indirect excitons is sustained even at room temperature, in contrast with the cryo-temperatures in previous experiments in monolayer TMDs. Room temperature demonstration of the indirect exciton valley polarization and valley Hall effect might open new perspectives for the development of opto-valleytronic devices based on TMD heterostructures.

cond-mat.mes-hall

Planar carbon nanotube-graphene hybrid films for high-performance broadband photodetectors

Graphene has emerged as a promising material for photonic applications fuelled by its superior electronic and optical properties. However, the photoresponsivity is limited by the low absorption cross section and ultrafast recombination rates of photoexcited carriers. Here we demonstrate a photoconductive gain of $\sim$ 10$^5$ electrons per photon in a carbon nanotube-graphene one dimensional-two dimensional hybrid due to efficient photocarriers generation and transport within the nanostructure. A broadband photodetector (covering 400 nm to 1550 nm) based on such hybrid films is fabricated with a high photoresponsivity of more than 100 AW$^{-1}$ and a fast response time of approximately 100 {\mu}s. The combination of ultra-broad bandwidth, high responsivities and fast operating speeds affords new opportunities for facile and scalable fabrication of all-carbon optoelectronic devices.

cond-mat.mtrl-sci