arXiv subjects

Yuansheng Zhao

Publications and source records attributed to Yuansheng Zhao.

5 recordsLinked to original sources

arXiv2026

Quantum algorithms for density functional theory with minimal readout

While quantum computers have shown significant promise for electronic structure calculations, their potential to accelerate density functional theory (DFT) calculations remains unclear. In this work, we present a qubit-efficient encoding scheme for wavefunctions in Kohn--Sham (KS) DFT, together with a quantum algorithm that computes all occupied orbitals simultaneously. We further show that our algorithm is particularly well suited to the Harris functional, enabling the total energy to be evaluated with a potential exponential speedup over classical approaches by entirely avoiding the costly readout of the electronic density. In addition, we propose a second method for achieving self-consistent DFT calculations using multiple copies of the wavefunction, which likewise circumvents density readout. The applicability of our algorithms is demonstrated through several numerical examples, and their efficiency is compared with that of existing approaches.

quant-ph↗

arXiv2025

Multistability of interstitial magnesium and its carrier recombined migration in gallium nitride

We present density-functional-theory calculations which provide a microscopic picture of the recombination-enhanced migration of interstitial Mg in GaN. We determine stable structures and migration pathways with accurate HSE approximation to the exchange-correlation energy, and also computed recombination rates using the obtained energy spectrum and wavefunctions. It is found that the migration between the most stable octahedral sites (Mg$_{\textrm{O}}$) via newly found interstitial complex structure shows the lowest migration energy in which one or two electrons are captured during the migration, that the most stable charge state of 2+ changes to 1+ or neutral, and that by this recombination of carriers the migration barrier is significantly reduced. Starting from Mg$_{\textrm{O}}^{2+}$, Mg captures an electron becoming the 1+ charge state and overcomes the barrier of 1.65 eV, much reduced from 2.23 eV in case of the migration with the 2+ charge state kept. Moreover, further electron capture is realized accompanied by substantial structural relaxation, thus Mg becoming neutral. Detailed HSE calculations for this second capture show that the migration barrier is 1.55 eV, thus clarifying the important role of the carrier recombination for Mg migration in GaN. These findings are corroborated by the present quantitative calculations of recombination rates based on electronic Hamiltonian constructed from our DFT-obtained energy spectrum. The timescale of the recombination is clarified to be in or under the timescale of the migration with typical electron density and the enhancement is expected to be significant.

cond-mat.mtrl-sci↗

arXiv2024

Data-Assimilated Crystal Growth Simulation for Multiple Crystalline Phases

To determine crystal structures from an X-ray diffraction (XRD) pattern containing multiple unknown phases, a data-assimilated crystal growth (DACG) simulation method has been developed. The XRD penalty function selectively stabilizes the structures in the experimental data, promoting their grain growth during simulated annealing. Since the XRD pattern is calculated as the Fourier transform of the pair distribution function, the DACG simulation can be performed without prior determination of the lattice parameters. We applied it to C (graphite and diamond) and SiO$_2$ (low-quartz and low-cristobalite) systems, demonstrating that the DACG simulation successfully reproduced multiple crystal structures.

cond-mat.mtrl-sci↗

arXiv2024

First-Principles Study of Recombination-Enhanced Migration of an Interstitial Magnesium in Gallium Nitride

The stable and metastable configurations of interstitial Mg in GaN and its migration energy barriers are studied from first-principles calculations. In addition to the conventional octahedral (O, global energy minimum) and tetrahedral (T, metastable) interstitial sites, we discover two new metastable interstitial complexes with formation energy lower than or close to that of T configuration but higher than O. Except for Mg at O site which only has +2 charge state, all other configurations also permit charge states +1 or 0. The minimum migration energy barrier for Mg$^{++}$ between O sites is found to be 1.95 eV. We further find that, when Fermi energy is close to the conduction band, the migration between O sites via metastable configurations occur through a recombination-enhanced mechanism in which the charge state changes from +2 at O site to 0 at metastable sites by consecutive capture of two electrons during the migration. This process greatly reduces the migration energy barrier to as low as 1.47 eV. This value is consistent with experiments, and we also discuss the role of intrinsic defects in the migration of Mg.

cond-mat.mtrl-sci↗

arXiv2022

Accelerating Simulated Annealing of Glassy Materials with Data Assimilation

The ultra-long relaxation time of glass transition makes it difficult to construct atomic models of amorphous materials by conventional methods. We propose a novel method for building such atomic models using data assimilation method by simulated annealing with an accurately computed interatomic potential augmented by penalty from experimental data. The advantage of this method is that not only can it reproduce experimental data as the structure refinement methods like reverse Monte Carlo but also obtain the reasonable structure in terms of interatomic potential energy. In addition, thanks to the interatomic potential, we do not need high $Q$ range diffraction data, which is necessary to take into account the short-range order. Persistent homology analysis shows that the amorphous ice obtained by the new method is indeed more ordered at intermediate range.

cond-mat.mtrl-sci↗