Yuehua Hu | Searcharxiv

arXiv2026

Failure-Aware Refinement of Vision-Language Model for Lithography Defect Detection

Semiconductor lithography inspection requires reliable detection of small pattern defects such as bridge, burr, pinch, and contamination. In this study, we propose a two-stage vision-language framework that combines initial defect detection with prediction refinement. In the first stage, Qwen3-VL is fine-tuned with LoRA as a vision-language adapter to predict defect counts, defect categories, and normalized bounding boxes from lithography images. However, direct fine-tuning may still produce common test-time errors, including false positives, missed defects, and incorrect defect types. To address this limitation, the second stage trains a refinement module using first-stage prediction failures and their corrected labels, allowing the model to review and revise initial outputs. By learning from cases where the initial adapter fails, the refinement process improves defect inference beyond single-stage fine-tuning.

cs.CV↗

arXiv2025

A Physics-Constrained, Design-Driven Methodology for Defect Dataset Generation in Optical Lithography

The efficacy of Artificial Intelligence (AI) in micro/nano manufacturing is fundamentally constrained by the scarcity of high-quality and physically grounded training data for defect inspection. Lithography defect data from semiconductor industry are rarely accessible for research use, resulting in a shortage of publicly available datasets. To address this bottleneck in lithography, this study proposes a novel methodology for generating large-scale, physically valid defect datasets with pixel-level annotations. The framework begins with the ab initio synthesis of defect layouts using controllable, physics-constrained mathematical morphology operations (erosion and dilation) applied to the original design-level layout. These synthesized layouts, together with their defect-free counterparts, are fabricated into physical samples via high-fidelity digital micromirror device (DMD)-based lithography. Optical micrographs of the synthesized defect samples and their defect-free references are then compared to create consistent defect delineation annotations. Using this methodology, we constructed a comprehensive dataset of 3,530 Optical micrographs containing 13,365 annotated defect instances including four classes: bridge, burr, pinch, and contamination. Each defect instance is annotated with a pixel-accurate segmentation mask, preserving full contour and geometry. The segmentation-based Mask R-CNN achieves AP@0.5 of 0.980, 0.965, and 0.971, compared with 0.740, 0.719, and 0.717 for Faster R-CNN on bridge, burr, and pinch classes, representing a mean AP@0.5 improvement of approximately 34%. For the contamination class, Mask R-CNN achieves an AP@0.5 roughly 42% higher than Faster R-CNN. These consistent gains demonstrate that our proposed methodology to generate defect datasets with pixel-level annotations is feasible for robust AI-based Measurement/Inspection (MI) in semiconductor fabrication.

cs.CV↗