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Yueshen Wu

Publications and source records attributed to Yueshen Wu.

At least 19 recordsLinked to original sources

Pressure induced magnetic-field-free superconducting diode effect in NbSe2 flake

The superconducting diode effect (SDE) is a fascinating nonreciprocal phenomenon where the critical current is different for opposite current directions. It is widely believed that realizing SDE requires breaking both inversion symmetry (IS) and time-reversal symmetry (TRS), which are usually achieved via heterostructure engineering and applying external magnetic fields. Here, we report a pressure-induced magnetic-field-free SDE in NbSe2 flakes without any heterostructures. We show that pressure alone breaks the IS, as confirmed by the second harmonic generation. Crucially, upon applying an out-of-plane magnetic field (B), the SDE exhibits even-in-B behavior, implying the absence of explicit TRS breaking. This finding challenges the prevailing theoretical paradigm and demonstrates that a magnetic-field-free SDE can emerge without explicitly breaking TRS. Thereby, our work establishes pressure engineering as a powerful tool for inducing nonreciprocal superconductivity and designing versatile, magnetic-field-free superconducting devices.

cond-mat.supr-con

Field-Tunable Anisotropic Fulde-Ferrell Phase in NbSe$_2$/CrSiTe$_3$ Heterostructures

The emergence of superconductivity in two-dimensional transition metal dichalcogenides with strong spin orbit coupling (SOC) has opened new avenues for exploring exotic superconducting states. Here, we report experimental observation of an anisotropic Fulde-Ferrell (FF) phase in few-layer NbSe$_2$/CrSiTe$_3$ heterostructures under in-plane magnetic fields. Through combined magnetoresistance and nonreciprocal transport measurements, we find that due to the couplings from the ferromagnetic CrSiTe$_3$, a half-dome-shaped region emerges in the magnetic field-temperature ($B$-$T$) diagram. Importantly, the half-dome-shaped region exhibits finite second harmonic resistance with in-plane anisotropy, indicating that the superconducting state is an anisotropic FF phase. Through a symmetry analysis combined with mean field calculations, we attribute the emergent anisotropic FF phase to the CrSiTe$_3$ layer induced Rashba SOC and three-fold rotational symmetry breaking. These results demonstrate that heterostructure stacking is a powerful tool for symmetry engineering in superconductors, which can advance the design of quantum devices in atomically thin superconducting materials.

cond-mat.supr-con

Field-free Superconducting Diode Effect in FeTe$_{0.55}$Se$_{0.45}$

The superconducting diode effect (SDE) - the asymmetry of critical currents with respect to current direction - is a pivotal advancement in non-reciprocal superconductivity. While SDE has been realized in diverse systems, a fundamental challenge remains achieving field-free operation in iron-based superconductors with simple device geometries. Here, we report a non-volatile, field-free SDE in thin crystalline FeTe$_{0.55}$Se$_{0.45}$(FTS), showing asymmetric critical currents with a rectification coefficient of 1.9% and operating temperatures up to 9 K. Intriguingly, a pronounced non-zero second harmonic resistance emerges at the superconducting transition, exhibiting a sign reversal under varying current and temperature. The SDE persists at zero magnetic field and the rectification coefficient($\eta$) exhibits an even symmetric dependence on the magnetic field, distinguishing it from magnetic chirality anisotropy mechanisms. In addition to this, we systematically ruled out influences from dynamic superconducting domains, thermal gradients, and sample geometry, while establishing that localized stress amplifies the rectification coefficient, likely constituting one of the principal contributing factors. These results establish FTS as a robust platform for realizing field-free superconducting diodes in a structurally simple platform.

cond-mat.supr-con

Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure

The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals (vdW) heterostructure. By injecting high-energy electrons into NbSe$_2$ under an electric field, a non-equilibrium state is induced, resulting in significant modulation of the superconducting properties. Owing to the intrinsic polarization of ferroelectric GaSe, a much steeper subthreshold slope and asymmetric modulation are achieved, which is beneficial to the device performance. Based on these results, a superconducting switch is realized that can reversibly and controllably switch between the superconducting and normal state under an electric field. Our findings highlight a significant high-energy injection effect from band engineering in 2D vdW heterostructures combining superconductors and ferroelectric semiconductors, and demonstrate the potential applications for superconducting integrated circuits.

cond-mat.supr-con

Observation of superconducting diode effect in antiferromagnetic Mott insulator $α$-RuCl$_3$

Nonreciprocal superconductivity, also called as superconducting diode effect that spontaneously breaks time-reversal symmetry, is characterized by asymmetric critical currents under opposite applied current directions. This distinct state unveils a rich ore of intriguing physical properties, particularly in the realm of nanoscience application of superconductors. Towards the experimental realization of superconducting diode effect, the construction of two-dimensional heterostructures of magnets and $s$-wave superconductors is considered to be a promising pathway. In this study, we present our findings of superconducting diode effect manifested in the magnetic Mott insulator $α$-RuCl$_3$. This phenomenon is induced by the proximity effect within a van der Waals heterostructure, consisting of thin $α$-RuCl$_3$/NbSe$_2$ flakes. Through transport property measurements, we have confirmed a weak superconducting gap of 0.2 meV, which is significantly lower than the intrinsic gap of NbSe$_2$(1.2 meV). Upon the application of a weak magnetic field below 70 mT, we observed an asymmetry in the critical currents under positive and negative applied currents. This observation demonstrates a typical superconducting diode effect in the superconducting $α$-RuCl$_3$. The superconducting diode effect and nonreciprocal resistance are observed exclusively when the magnetic field is aligned out-of-plane. This suggests that an Ising-type spin-orbit coupling in the superconducting $α$-RuCl$_3$ may be responsible for the mechanism. Our findings furnish a platform for the exploration of superconducting diode effect via the artificial construction of heterostructures.

cond-mat.supr-con

Intrinsic supercurrent diode effect in NbSe2 nanobridge

The significance of the superconducting diode effect lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low temperatures have posed challenges for the conventional semiconductor diode, primarily due to its exceptionally high resistivity. In response to this limitation, various approaches have emerged to achieve the superconducting diode effect, primarily involving the disruption of inversion symmetry in a two-dimensional superconductor through heterostructure fabrication. In this study, we present a direct observation of the supercurrent diode effect in a NbSe2 nanobridge with a length of approximately 15 nm, created using focused helium ion beam fabrication. Nonreciprocal supercurrents were identified, reaching a peak value of approximately 380 $μ$A for each bias polarity at $B_{z}^{max} =\pm 0.2$ mT. Notably, the nonreciprocal supercurrent can be toggled by altering the bias polarity. This discovery of the superconducting diode effect introduces a novel avenue and mechanism through nanofabrication on a superconducting flake, offering fresh perspectives for the development of superconducting devices and potential circuits.

cond-mat.mes-hall

Nonreciprocal charge transport in the titanium sesquioxide heterointerface superconductor

Nonreciprocal charge transport in heterostructural superconductors exhibits appealing quantum physical phenomena and holds the promising potential for superconducting circuits applications. Realizing a nonreciprocity is, however, fundamentally and technologically challenging, as it requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, we report an evidence of helical superconductivity, in which the Rashba spin-orbit coupling induces momentum-dependent superconducting gap in the inversion symmetry breaking heterointerface superconductor consisting of Mott insulating Ti$_2$O$_3$ and polar semiconducting GaN. Remarkably, the nonlinear responses emerge in the superconducting transition regime, when the magnetic field is precisely aligned in-plane orientations perpendicular to the applied current. In particular, the observed nonreciprocal supercurrent is extremely sensitive to the direction of the magnetic field for 0.5 degree, suggestive of a crossover from a symmetry breaking state to a symmetric one. Our finding not only unveils the underlying rich physical properties in heterointerface superconductors, but also provides an exciting opportunity for the development of novel mesoscopic superconducting devices.

cond-mat.supr-con

Colossal Magnetoresistance in Twisted Intertwined Graphene Spirals

Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moir$\acute{e}$ system, which demonstrates CMR owing to its topological structure and high-quality crystal formation. We specifically investigate the electronic properties of three-dimensional (3D) intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3$^{\circ}$. Notably, at 14 T and 2 K, the magnetoresistance of these structures reached 1.7$\times$10$^7$%, accompanied by an unexpected metal-to-insulator transition as the temperature increased. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up new possibilities for achieving CMR by engineering the topological structure of 2D layered moir$\acute{e}$ systems.

cond-mat.mes-hall

Constructing the Fulde-Ferrell-Larkin-Ovchinnikov state in antiferromagnetic insulator CrOCl

Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, we report the observation of superconductivity in a few-layer antiferromagnetic insulator CrOCl by utilizing superconducting proximity effect with NbSe2 flakes. The superconductivity demonstrates a considerably weak gap of about 0.12 meV and the in-plane upper critical field reveals as behavior of the FFLO state at low temperature. Our first-principles calculations indicate that the proximitized superconductivity may exist in the CrOCl layer with Cr vacancies or line-defects. Moreover, the FFLO state could be induced by the inherent larger spin splitting in the CrOCl layer. Our findings not only demonstrate the fascinating interaction between superconductivity and magnetism, but also provide a possible path to construct FFLO state by intrinsic time reversal symmetry breaking and superconducting proximity effect.

cond-mat.supr-con

Proximity effect induced intriguing superconductivity in van der Waals heterostructure of magnetic topological insulator and conventional superconductor

Nontrivial topological superconductivity has received enormous research attentions due to its potential for diverse applications in topological quantum computing. The intrinsic issue concerning the correlation between a topological insulator and a superconductor is, however, still widely open. Here, we systemically report an emergent superconductivity in a cross-junction composed of a magnetic topological insulator MnBi2Te4 and a conventional superconductor NbSe2. Remarkably, the interface indicates existence of a reduced superconductivity at surface of NbSe2 and a proximity-effectinduced superconductivity at surface of MnBi2Te4. Furthermore, the in-plane angular-dependent magnetoresistance measurements reveal the fingerprints of the paring symmetry behaviors for these superconducting gaps as a unconventional nature. Our findings extend our views and ideas of topological superconductivity in the superconducting heterostructures with time-reversal symmetry breaking, offering an exciting opportunity to elucidate the cooperative effects on the surface state of a topological insulator aligning a superconductor.

cond-mat.supr-con

Spontaneous rotational symmetry breaking in KTaO$_3$ heterointerface superconductors

Broken symmetries play a fundamental role in superconductivity and influence many of its properties in a profound way. Understanding these symmetry breaking states is essential to elucidate the various exotic quantum behaviors in non-trivial superconductors. Here, we report an experimental observation of spontaneous rotational symmetry breaking of superconductivity at the heterointerface of amorphous (a)-YAlO$_3$/KTaO$_3$(111) with a superconducting transition temperature of 1.86 K. Both the magnetoresistance and superconducting critical field in an in-plane field manifest striking twofold symmetric oscillations deep inside the superconducting state, whereas the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute this behavior to the mixed-parity superconducting state, which is an admixture of \emph{s}-wave and \emph{p}-wave pairing components induced by strong spin-orbit coupling inherent to inversion symmetry breaking at the heterointerface of a-YAlO$_3$/KTaO$_3$. Our work suggests an unconventional nature of the underlying pairing interaction in the KTaO$_3$ heterointerface superconductors, and brings a new broad of perspective on understanding non-trivial superconducting properties at the artificial heterointerfaces.

cond-mat.supr-con

Unique quantum metallic state in the titanium sesquioxide heterointerface superconductor

The emergence of quantum metallic state marked by a saturating finite electrical resistance in the zero-temperature limit in a variety of two-dimensional superconductors injects an exciting momentum to the realm of heterostructure superconductivity. Despite much research efforts over last few decades, there is not yet a general consensus on the nature of this unexpected quantum metal. Here, we report the observation of a unique quantum metallic state within the hallmark of Bose-metal in the titanium sesquioxide heterointerface superconductor Ti$_2$O$_3$/GaN. Remarkably, the quantum bosonic metallic state continuously tuned by a magnetic field in the vicinity of the two-dimensional superconductivity-metal transition persists in the normal phase, indicating the existence of composite bosons formed by electron Cooper pairs even in the normal phase. Our findings provide a distinct evidence for electron pairing in the normal phase of heterointerface superconductors, and shed fresh light on the pairing nature underlying heterointerface superconductivity.

cond-mat.supr-con

Nonreciprocal Charge Transport in Topological Kagome Superconductor CsV$_{3}$Sb$_{5}$

Nonreciprocal charge transport phenomena are widely studied in two-dimensional superconductors, which demonstrate unidirectional-anisotropy magnetoresistances as a result of symmetry breaking. Here, we report a strong nonreciprocal transport phenomenon in superconducting CsV$_{3}$Sb$_{5}$ thin flakes. The second harmonic voltages, mainly originating from the rectification effect of vortex motion, are unambiguously developed with in-plane and out-of-plane magnetic fields, and their magnitudes are comparable to those in noncentrosymmetric superconductors. The second harmonic magnetoresistances split into several peaks and some of them reverse their signs by ramping the magnetic field or the current within the superconducting transition. The nonreciprocity suggests a strong asymmetry in CsV$_{3}$Sb$_{5}$. The centrosymmetric structure and symmetric electronic phases in CsV$_{3}$Sb$_{5}$ can hardly induce the distinct nonreciprocal transport phenomenon, which could be correlated to a symmetry breaking from an unconventional superconducting order parameter symmetry.

cond-mat.supr-con

Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism

The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals ferromagnet Fe5-xGeTe2 with a Curie temperature Tc ~ 270 K, which can even reach as high as ~ 120 K. The WAL effect could be well described by the Hikami-Larkin-Nagaoka and Maekawa-Fukuyama theories in the presence of strong spin-orbit coupling (SOC). Moreover, A crossover from a peak to dip behavior around 60 K in both the magnetoresistance and magnetoconductance was observed, which could be ascribed to a rare example of temperature driven Lifshitz transition as indicated by the angle-resolved photoemission spectroscopy measurements and first principles calculations. The reflective magnetic circular dichroism measurements indicate a possible spin reorientation that kills the WAL effect above 120 K. Our findings present a rare example of WAL effect in two-dimensional ferromagnet and also a magnetotransport fingerprint of the strong SOC in Fe5-xGeTe2. The results would be instructive for understanding the interaction Hamiltonian for such high Tc itinerant ferromagnetism as well as be helpful for the design of next-generation room temperature spintronic or twistronic devices.

cond-mat.mtrl-sci

Charge density wave orders and enhanced superconductivity under pressure in the kagome metal CsV3Sb5

Superconductivity in topological kagome metals has recently received great research interests. Here, charge density wave (CDW) orders and the evolution of superconductivity under various pressures in CsV3Sb5 single crystal with V kagome lattice are investigated. By using high-resolution scanning tunnelling microscopy /spectroscopy (STM/STS), two CDW orders in CsV3Sb5 are observed which correspond to 4a*1a and 2a*2a superlattices. By applying pressure, the superconducting transition temperature Tc is significantly enhanced and reaches a maximum value of 8.2 K at around 1 GPa. Accordingly, CDW state is gradually declined as increasing the pressure, which indicates the competing interplay between CDW and superconducting state in this material. The broad superconducting transitions around 0.4 - 0.8 GPa can be related to the strong competition relation among two CDW states and superconductivity. These results demonstrate that CsV3Sb5 is a new platform for exploring the interplay between superconductivity and CDW in topological kagome metals.

cond-mat.supr-con

Impurity-pinned incommensurate charge density wave and local phonon excitations in 2H-NbS2

Here we report a scanning tunneling microscopy (STM) and spectroscopy (STS) study in the superconducting state of 2H-NbS2. We directly visualize the existence of incommensurate charge density wave (CDW) that is pinned by atomic impurities. In strong tunneling conditions, the incommensurate CDW is de-pinned from impurities by the electric field from STM tip. We perform STM-based inelastic tunneling spectroscopy (IETS) to detect phonon excitations in 2H-NbS2 and measure the influence of atomic impurities on local phonon excitations. In comparison with the calculated vibrational density of states in 2H-NbS2, we find two branches of phonon excitations which correspond to the vibrations of Nb ions and S ions, and the strength of the local phonon excitations is insensitive to the atomic impurities. Our results demonstrate the coexistence of incommensurate CDW and superconductivity in 2H-NbS2, and open the way of detecting atomic-scale phonon excitations in transition metal dichalcogenides with STM-based IETS.

cond-mat.mes-hall

Lithium ion intercalation in thin crystals of hexagonal TaSe2 gated by a polymer electrolyte

Ionic liquid gating has been used to modify properties of layered transition metal dichalcogenides (TMDCs), including two-dimensional (2D) crystals of TMDCs used extensively recently in the device work, which has led to observations of properties not seen in the bulk. The main effect comes from the electrostatic gating due to strong electric field at the interface. In addition, ionic liquid gating also leads to ion intercalation when the ion size of gate electrolyte is small compared to the interlayer spacing of TMDCs. However, the microscopic processes of ion intercalation have rarely been explored in layered TMDCs. Here, we employed a technique combining photolithography device fabrication and electrical transport measurements on the thin crystals of hexagonal TaSe2 using multiple channel devices gated by a polymer electrolyte LiClO4/PEO. The gate voltage and time dependent source-drain resistances of these thin crystals were used to obtain information on the intercalation process, the effect of ion intercalation, and the correlation between the ion occupation of allowed interstitial sites and the device characteristics. We found a gate voltage controlled modulation of the charge density waves and scattering rate of charge carriers. Our work suggests that ion intercalation can be a useful tool for layered materials engineering and 2D crystal device design.

cond-mat.mtrl-sci

Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$

The behavior of charge density wave (CDW) in an external magnetic field is dictated by both orbital and Pauli (Zeeman) effects. A quasi-one-dimensional (Q1D) system features Q1D Fermi surfaces that allow these effects to be distinguished, which in turn can provide sensitive probe to the underlying electronic states. Here we studied the field dependence of an incommensurate CDW in a transition-metal chalcogenide Ta2NiSe7 with a Q1D chain structure. The angle-dependent magnetoresistance (MR) is found to be very sensitive to the relative orientation between the magnetic field and the chain direction. With an applied current fixed along the b axis (the chain direction), the angle-dependent MR shows a striking change of the symmetry below T_CDW only for a rotating magnetic field in the ac plane. In contrast, the symmetry axis remains unchanged for other configurations (H in ab and bc plane). The orbital effect conforms to the lattice symmetry, while Pauli effect in the form of μB B / v_F can be responsible for such symmetry change, provided that the Fermi velocity v_F is significantly anisotropic and the nesting vector changes in a magnetic field, which is corroborated by our first-principles calculations. Our results show that the angle-dependent MR is a sensitive transport probe of CDW and can be useful for the study of low-dimensional systems in general.

cond-mat.str-el