arXiv subjects

Yufeng Hao

Publications and source records attributed to Yufeng Hao.

17 recordsLinked to original sources

arXiv2026

The Interspeech 2026 Audio Encoder Capability Challenge for Large Audio Language Models

This paper presents the Interspeech 2026 Audio Encoder Capability Challenge, a benchmark specifically designed to evaluate and advance the performance of pre-trained audio encoders as front-end modules for Large Audio Language Models (LALMs). While LALMs have shown remarkable understanding of complex acoustic scenes, their performance depends on the semantic richness of the underlying audio encoder representations. This challenge addresses the integration gap by providing a unified generative evaluation framework, XARES-LLM, which assesses submitted encoders across a diverse suite of downstream classification and generation tasks. By decoupling encoder development from LLM fine-tuning, the challenge establishes a standardized protocol for general-purpose audio representations that can effectively be used for the next generation of multimodal language models.

cs.SD↗

arXiv2023

$ \mathrm{Sr}_{4}\mathrm{Al}_{2}\mathrm{O}_{7}$: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes

Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the $ \mathrm{(Ca, Sr, Ba)}_{3}\mathrm{Al}_{2}\mathrm{O}_{6}$ compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces. However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, we introduce a new member of the $ \mathrm{SrO-}\mathrm{Al}_{2}\mathrm{O}_{3}$ family,$ \mathrm{Sr}_{4}\mathrm{Al}_{2}\mathrm{O}_{7},$, and demonstrate its high dissolution rate, about 10 times higher than that of $ \mathrm{Sr}_{3}\mathrm{Al}_{2}\mathrm{O}_{6}$. The high-dissolution-rate of $ \mathrm{Sr}_{4}\mathrm{Al}_{2}\mathrm{O}_{7}$ is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. Our work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Antiferromagnetic $α$-MnTe: Molten-Salt-Assisted Chemical Vapor Deposition Growth and Magneto-Transport Properties

Antiferromagnetic (AF) materials are attracting increasing interest of research in magnetic physics and spintronics. Here, we report controllable synthesis of room-temperature AF $α$-MnTe nanocrystals (Néel temperature ~ 307 K) via molten-salt-assisted chemical vapor deposition method. The growth kinetics are investigated regarding the dependence of flake dimension and macroscopic shape on growth time and temperature. The high crystalline quality and atomic structure are confirmed by various crystallographic characterization means. Cryogenic magneto-transport measurements reveal anisotropic magnetoresistance (MR) response and a complicated dependence of MR on temperature, owing to the subtle competition among multiple scattering mechanisms of thermally excited magnetic disorders (magnon drag), magnetic transition and thermally populated lattice phonons. Overall positive MR behavior with twice transitions in magnitude is observed when out-of-plane external magnetic field ($B$) is applied, while a transition from negative to positive MR response is recorded when in-plane $B$ is applied. The rich magnetic transport properties render $α$-MnTe a promising material for exploiting functional components in magnetic devices.

cond-mat.mtrl-sci↗

arXiv2021

Stacked polarimeters with twisted black phosphorus

The real-time, in-line analysis of light polarization is critical in optical communication networks, which suffers from the complex systems with numerous bulky opto-electro-mechanical elements tandemly arranged along optical path. Here, we propose a fiber-integrated polarimeter with nano-thickness by vertically stacking three two-dimensional (2D) materials based photodetection units. We demonstrate a self-power-calibrated, ultrafast, unambiguous detection of linear (LP) and circular polarized (CP) light according to the symmetry broken induced linear photogalvanic effects (LPGE) and circular photogalvanic effects (CPGE) in black phosphorous (BP) units, which are twistedly stacked to substitute traditional mechanical rotation of polarizers. As a demonstration, we achieve Hadamard single-pixel polarimetric imaging by the polarimeter to recognize the polarization distributions, showing potential in high-speed polarization-division-multiplexed imaging and real-time polarized endoscopy. This work provides a new strategy for next-generation ultracompact optical and optoelectronic systems, and guides a way for developing high-resolution arrayed devices with multifunctional pixels.

physics.optics↗

arXiv2020

Simultaneous Generation of Direct- and Indirect-Gap Photoluminescence in Multilayer MoS2 Bubbles

Transition metal dichalcogenide (TMD) materials have received enormous attention due to their extraodinary optical and electrical properties, among which MoS2 is the most typical one. As thickness increases from monolayer to multilayer, the photoluminescence (PL) of MoS2 is gradually quenched due to the direct-to-indirect band gap transition. How to enhance PL response and decrease the layer dependence in multilayer MoS2 is still a challenging task. In this work, we report, for the first time, simultaneous generation of three PL peaks at around 1.3, 1.4 and 1.8 eV on multilayer MoS2 bubbles. The temperature dependent PL measurements indicate that the two peaks at 1.3 and 1.4 eV are phonon-assisted indirect-gap transitions while the peak at 1.8 eV is the direct-gap transition. Using first-principles calculations, the band structure evolution of multilayer MoS2 under strain is studied, from which the origin of the three PL peaks of MoS2 bubbles is further confirmed. Moreover, PL standing waves are observed in MoS2 bubbles that creates Newton-Ring-like patterns. This work demonstrates that the bubble structure may provide new opportunities for engineering the electronic structure and optical properties of layered materials.

cond-mat.mtrl-sci↗

arXiv2020

The de Hass-van Alphen quantum oscillations in a three-dimensional Dirac semimetal TiSb2

We have used the de Hass-van Alphen (dHvA) effect to investigate the Fermi surface of high-quality crystalline TiSb2, which unveiled a nontrivial topologic nature by analyzing the dHvA quantum oscillations. Moreover, our analysis on the quantum oscillation frequencies associated with nonzero Berry phase when the magnetic field is parallel to both of the ab-plane and c-axis of TiSb2 finds that the Fermi surface topology has a three-dimensional (3D) feature. The results are supported by the first-principle calculations which revealed a symmetry-protected Dirac point appeared along the Γ-Z high symmetry line near the Fermi level. On the (001) surface, the bulk Dirac points are found to project onto the -Γ point with nontrivial surface states. Our finding will substantially enrich the family of 3D Dirac semimetals which are useful for topological applications.

cond-mat.str-el↗

arXiv2019

Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological insulator state

High magnetic field transport measurements and ab initio calculations on the layered superconductor TaSe3 have provided compelling evidences for the existence of a three-dimensional strong topological insulator state. Longitudinal magnetotransport measurements up to ~ 33 T unveiled striking Shubnikov-de Hass oscillations with two fundamental frequencies at 100 T and 175 T corresponding to a nontrivial electron Fermi pocket at the B point and a nontrivial hole Fermi pocket at the Γ point respectively in the Brillouin zone. However, calculations revealed one more electron pocket at the B point, which was not detected by the magnetotransport measurements, presumably due to the limited carrier momentum relaxation time. Angle dependent quantum oscillations by rotating the sample with respect to the magnetic field revealed clear changes in the two fundamental frequencies, indicating anisotropic electronic Fermi pockets. The ab initio calculations gave the topological Z2 invariants of (1; 100) and revealed a single Dirac cone on the (1 0 -1) surface at the X point with helical spin texture at a constant-energy contour, suggesting a strong topological insulator state. The results demonstrate TaSe3 an excellent platform to study the interplay between topological phase and superconductivity and a promising system for the exploration of topological superconductivity.

cond-mat.supr-con↗

arXiv2017

The implementation of a Deep Recurrent Neural Network Language Model on a Xilinx FPGA

Recently, FPGA has been increasingly applied to problems such as speech recognition, machine learning, and cloud computation such as the Bing search engine used by Microsoft. This is due to FPGAs great parallel computation capacity as well as low power consumption compared to general purpose processors. However, these applications mainly focus on large scale FPGA clusters which have an extreme processing power for executing massive matrix or convolution operations but are unsuitable for portable or mobile applications. This paper describes research on single-FPGA platform to explore the applications of FPGAs in these fields. In this project, we design a Deep Recurrent Neural Network (DRNN) Language Model (LM) and implement a hardware accelerator with AXI Stream interface on a PYNQ board which is equipped with a XILINX ZYNQ SOC XC7Z020 1CLG400C. The PYNQ has not only abundant programmable logic resources but also a flexible embedded operation system, which makes it suitable to be applied in the natural language processing field. We design the DRNN language model with Python and Theano, train the model on a CPU platform, and deploy the model on a PYNQ board to validate the model with Jupyter notebook. Meanwhile, we design the hardware accelerator with Overlay, which is a kind of hardware library on PYNQ, and verify the acceleration effect on the PYNQ board. Finally, we have found that the DRNN language model can be deployed on the embedded system smoothly and the Overlay accelerator with AXI Stream interface performs at 20 GOPS processing throughput, which constitutes a 70.5X and 2.75X speed up compared to the work in Ref.30 and Ref.31 respectively.

cs.NE↗

arXiv2017

A General Neural Network Hardware Architecture on FPGA

Field Programmable Gate Arrays (FPGAs) plays an increasingly important role in data sampling and processing industries due to its highly parallel architecture, low power consumption, and flexibility in custom algorithms. Especially, in the artificial intelligence field, for training and implement the neural networks and machine learning algorithms, high energy efficiency hardware implement and massively parallel computing capacity are heavily demanded. Therefore, many global companies have applied FPGAs into AI and Machine learning fields such as autonomous driving and Automatic Spoken Language Recognition (Baidu) [1] [2] and Bing search (Microsoft) [3]. Considering the FPGAs great potential in these fields, we tend to implement a general neural network hardware architecture on XILINX ZU9CG System On Chip (SOC) platform [4], which contains abundant hardware resource and powerful processing capacity. The general neural network architecture on the FPGA SOC platform can perform forward and backward algorithms in deep neural networks (DNN) with high performance and easily be adjusted according to the type and scale of the neural networks.

cs.CV↗

arXiv2015

Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist

We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolayer MoS2, the resulting band structure reveals the absence of hybridization between the graphene and MoS2 electronic states. Further, the graphene-derived electronic structure in the heterostructures remains intact, irrespective of the twist angle between the two materials. In contrast, however, the electronic structure associated with the MoS2 layer is found to be twist-angle dependent; in particular, the relative difference in the energy of the valence band maximum at Γ and K of the MoS2 layer varies from approximately 0 to 0.2 eV. Our results suggest that monolayer MoS2 within the heterostructure becomes predominantly an indirect bandgap system for all twist angles except in the proximity of 30 degrees. This result enables potential bandgap engineering in van der Waals heterostructures comprised of monolayer structures.

cond-mat.mes-hall↗

arXiv2015

Thermal Oxidation of WSe2 Nano-sheets Adhered on SiO2/Si Substrates

Due to the drastically different intralayer versus interlayer bonding strengths, the mechanical, thermal, and electrical properties of two-dimensional (2D) materials are highly anisotropic between the in-plane and out-of-plane directions. The structural anisotropy may also play a role in chemical reactions, such as oxidation, reduction, and etching. Here, the composition, structure, and electrical properties of mechanically exfoliated WSe2 nano- sheets on SiO2/Si substrates were studied as a function of the extent of thermal oxidation. A major component of the oxidation, as indicated from optical and Raman data, starts from the nano-sheet edges and propagates laterally towards the center. Partial oxidation also occurs in certain areas at the surface of the flakes, which are shown to be highly conductive by microwave impedance microscopy. Using secondary ion mass spectroscopy, we also observed extensive oxidation at the WSe2/SiO2 interface. The combination of multiple microcopy methods can thus provide vital information on the spatial evolution of chemical reactions on 2D materials and the nanoscale electrical properties of the reaction products.

cond-mat.mtrl-sci↗

arXiv2015

Photonic and plasmonic guiding modes in graphene-silicon photonic crystals

We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into four distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By optimizing the design of the substrate, these resonant modes can magnify the graphene absorption in infrared wavelength, for efficient modulators, filters, sensors and photodetectors on silicon photonic platforms.

physics.optics↗

arXiv2015

Breaking of symmetry in graphene growth on metal substrates

In graphene growth, island symmetry can become lower than the intrinsic symmetries of both graphene and the substrate. First-principles calculations and Monte Carlo modeling explain the shapes observed in our experiments and earlier studies for various metal surface symmetries. For equilibrium shape, edge energy variations $δE$ manifest in distorted hexagons with different ground-state edge structures. In growth or nucleation, energy variation enters exponentially as $\sim e^{δE / k_{B} T}$, strongly amplifying the symmetry breaking, up to completely changing the shapes to triangular, ribbon-like, or rhombic.

cond-mat.mtrl-sci↗

arXiv2013

Integrating MBE materials with graphene to induce novel spin-based phenomena

Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent phenomena. First, we investigate the epitaxial growth the ferromagnetic insulator EuO on graphene and discuss possible scenarios for realizing exchange splitting and exchange fields by ferromagnetic insulators. Second, we investigate the properties of magnetic moments in graphene originating from localized p_z-orbital defects (i.e. adsorbed hydrogen atoms). The behavior of these magnetic moments is studied using non-local spin transport to directly probe the spin-degree of freedom of the defect-induced states. We also report the presence of enhanced electron g-factors caused by the exchange fields present in the system. Importantly, the exchange field is found to be highly gate dependent, with decreasing g-factors with increasing carrier densities.

cond-mat.mes-hall↗

arXiv2013

Integration of the Ferromagnetic Insulator EuO onto Graphene

We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wavefunctions at the FMI/graphene interface can induce a large spin splitting inside the graphene. Experimental realization of this effect could lead to new routes for spin manipulation, which is a necessary requirement for a functional spin transistor. Furthermore, EPI could lead to novel spintronic behavior such as controllable magnetoresistance, gate tunable exchange bias, and quantized anomalous Hall effect. However, experimentally, EuO has not yet been integrated onto graphene. Here we report the successful growth of high quality crystalline EuO on highly-oriented pyrolytic graphite (HOPG) and single-layer graphene. The epitaxial EuO layers have (001) orientation and do not induce an observable D peak (defect) in the Raman spectra. Magneto-optic measurements indicate ferromagnetism with Curie temperature of 69 K, which is the value for bulk EuO. Transport measurements on exfoliated graphene before and after EuO deposition indicate only a slight decrease in mobility.

cond-mat.mtrl-sci↗

arXiv2012

Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition

We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors $ν=4, 8, 12$ consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the inter-layer capacitance.

cond-mat.mes-hall↗

arXiv2010

Gold on graphene as a substrate for surface enhanced Raman scattering study

In this paper, we report our study on gold (Au) films with different thicknesses deposited on single layer graphene (SLG) as surface enhanced Raman scattering (SERS) substrates for the characterization of rhodamine (R6G) molecules. We find that an Au film with a thickness of ~7 nm deposited on SLG is an ideal substrate for SERS, giving the strongest Raman signals for the molecules and the weakest photoluminescence (PL) background. While Au films effectively enhance both the Raman and PL signals of molecules, SLG effectively quenches the PL signals from the Au film and molecules. The former is due to the electromagnetic mechanism involved while the latter is due to the strong resonance energy transfer from Au to SLG. Hence, the combination of Au films and SLG can be widely used in the characterization of low concentration molecules with relatively weak Raman signals.

cond-mat.mtrl-sci↗