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Yugui Yao

Publications and source records attributed to Yugui Yao.

At least 199 records · Page 11Linked to original sources

Two-dimensional Dirac semiconductor and its material realization

We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such Dirac semiconductor that features Dirac cone at X/Y point, protected by nonsymmorphic symmetry. Due to sandwich-like structure, each Dirac fermion in TL-BiOS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such Dirac semiconductor carries layer-dependent helical spin textures that never been reported before. Moreover, novel topological phase transitions are flexibly achieved in TL-BiOS2: (i) an vertical electric field can drive it into Weyl semiconductor with switchable spin polarization direction, (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into Weyl nodal ring around X point and into another type of four-fold degenerate point at Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.

cond-mat.mtrl-sci↗

Type-III Weyl Semimetals: (TaSe4)2I

Weyl semimetals have been classified into type-I and type-II with respect to the geometry of their Fermi surfaces at the Weyl points. Here, we propose a new class of Weyl semimetal, whose unique Fermi surface contains two electron or two hole pockets touching at a multi-Weyl point, dubbed as type-III Weyl semimetal. Based on first-principles calculations, we first show that quasi-one-dimensional compound (TaSe4)2I is a type-III Weyl semimetal with larger chiral charges. (TaSe4)2I can support four-fold helicoidal surface states with remarkably long Fermi arcs on the (001) surface. Angle-resolved photoemission spectroscopy measurements are in agreement with the gapless nature of (TaSe4)2I at room temperature and reveal its characteristic dispersion. In addition, our calculations show that external strain could induce topological phase transitions in (TaSe4)2I among the type-III, type-II, and type-I Weyl semimetals, accompanied with the Lifshitz transitions of the Fermi surfaces. Therefore, our work first experimentally indicates (TaSe4)2I as a type-III Weyl semimetal and provides a promising platform to further investigate the novel physics of type-III Weyl fermions.

cond-mat.mes-hall↗

Weyl Nodal Line-Surface Half-metal in CaFeO$_3$

Manipulating the spin degrees of freedom of electrons affords an excellent platform for exploring novel quantum states in condensed-matter physics and material science. Based on first-principles calculations and analysis of crystal symmetries, we propose a fully spin-polarized composite semimetal state, which is combined with the one-dimensional nodal lines and two-dimensional nodal surfaces, in the half-metal material CaFeO$_3$. In the nodal line-surface states, the Baguenaudier-like nodal lines feature six rings linked together, which are protected by the three independent symmetry operations:$\mathcal{PT}$, $\mathcal{M}_{y}$, and $\mathcal{\widetilde{M}}_{z}$. Near the Fermi level, the spin-polarized nodal surface states are guaranteed by the joint operation $\mathcal{T}\mathcal{S}_{2i}$ in the $k_{i(i=x,y,z)}=π$ plane. Furthermore, high-quality CaFeO$_3$ harbors ultra-clean energy dispersion, which is rather robust against strong triaxial compressional strain and correlation effect. The realization of the Weyl nodal line-surface half-metal presents great potential for spintronics applications with high speed and low power consumption.

cond-mat.mtrl-sci↗

Double Dirac Nodal Line Semimetal with Torus Surface State

We propose a class of nodal line semimetals that host an eight-fold degenerate double Dirac nodal line (DDNL) with negligible spin-orbit coupling. We find only 5 of the 230 space groups host the DDNL. The DDNL can be considered as a combination of two Dirac nodal lines, and has a trivial Berry phase. This leads to two possible but completely different surface states, namely, a torus surface state covering the whole surface Brillouin zone and no surface state at all. Based on first-principles calculations, we predict that the hydrogen storage material LiBH is an ideal DDNL semimetal, where the line resides at Fermi level, is relatively flat in energy, and exhibits a large linear energy range. Interestingly, both the two novel surface states of DDNL can be realized in LiBH. Further, we predict that with a magnetic field parallel to DDNL, the Landau levels of DDNL are doubly degenerate due to Kramers-like degeneracy and have a doubly degenerate zero-mode.

cond-mat.mes-hall↗

Valley-dependent properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$

In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located at the corners of the hexagonal Brillouin zone. Due to the broken inversion symmetry and the effect of spin-orbit coupling, the valley fermions manifest spin-valley coupling, valley-contrasting Berry curvature, and valley-selective optical circular dichroism. We also construct the low-energy effective model for the valleys, calculate the spin Hall conductivity and the permittivity, and investigate the strain effect on the band structure. Our result reveals interesting valley physics in monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$, suggesting their great potential for valleytronics and spintronics applications.

cond-mat.mtrl-sci↗

SpaceGroupIrep: A package for irreducible representations of space group

We have developed a Mathematica program package SpaceGroupIrep which is a database and tool set for irreducible representations (IRs) of space group in BC convention, i.e. the convention used in the famous book "The mathematical theory of symmetry in solids" by C. J. Bradley & A. P. Cracknell. Using this package, elements of any space group, little group, Herring little group, or central extension of little co-group can be easily obtained. This package can give not only little-group (LG) IRs for any k-point but also space-group (SG) IRs for any k-stars in intuitive table form, and both single-valued and double-valued IRs are supported. This package can calculate the decomposition of the direct product of SG IRs for any two k-stars. This package can determine the LG IRs of Bloch states in energy bands in BC convention and this works for any input primitive cell thanks to its ability to convert any input cell to a cell in BC convention. This package can also provide the correspondence of k-points and LG IR labels between BCS (Bilbao Crystallographic Server) and BC conventions. In a word, the package SpaceGroupIrep is very useful for both study and research, e.g. for analyzing band topology or determining selection rules.

cond-mat.mtrl-sci↗

Hole-Doped Room-Temperature Superconductivity in H$_{3}$S$_{1-x}$Z$_x$ (Z=C, Si)

We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure at megabar pressure. The hole doping can fine-tune the Fermi energy to reach the electronic density-of-states peak maximizing the electron-phonon coupling. This can boost the critical temperature from the original 203 K to 289 K and 283 K, respectively, for H$_3$S$_{0.962}$C$_{0.038}$ at 260 GPa and H$_3$S$_{0.960}$Si$_{0.040}$ at 230 GPa. The former may provide an explanation for the recent experimental observation of room-temperature superconductivity in a highly compressed C-S-H system [Nature 586, 373-377 (2020)]. Our work opens a new avenue for substantially raising the critical temperatures of hydrogen-rich materials.

cond-mat.supr-con↗

Electrically Controllable Crystal Chirality Magneto-Optical Effects in Collinear Antiferromagnets

The spin chirality, created by magnetic atoms, has been comprehensively understood to generate and control the magneto-optical effects. In comparison, the role of the crystal chirality that relates to nonmagnetic atoms has received much less attention. Here, we theoretically discover the crystal chirality magneto-optical (CCMO) effects, which depend on the chirality of crystal structures that originates from the rearrangement of nonmagnetic atoms. We show that the CCMO effects exist in many collinear antiferromagnets, such as RuO$_{2}$ and CoNb$_{3}$S$_{6}$, which has a local and global crystal chirality, respectively. The key character of the CCMO effects is the sign change if the crystal chirality reverses. The magnitudes of the CCMO spectra can be effectively manipulated by reorienting the Néel vector with the help of an external electric field, and the spectral integrals are found to be proportional to magnetocrystalline anisotropy energy.

cond-mat.mtrl-sci↗

$\textit{Ab initio}$ four-band Wannier tight-binding model for generic twisted graphene systems

The newly realized twisted graphene systems such as twisted bilayer graphene (TBG), twisted double bilayer graphene (TDBG), and twisted trilayer graphene (TTG) have attracted widespread theoretical attention. Therefore, a simple and accurate model of the systems is of vital importance for the further study. Here, we construct the symmetry-adapted localized Wannier functions and the corresponding $\textit{ab initio}$ minimal two-valley four-band effective tight-binding models for generic twisted graphene systems with small twist angle. Such two-valley model evades the Wannier obstruction caused by the fragile topology in one-valley model. The real space valley operator is introduced to explicitly describe the valley $U_{v}\left(1\right)$ symmetry. Each symmetry-adapted Wannier orbital shows a peculiar three-peak form with its maximum at AA spots and its center at AB or BA spots. An extended Hubbard model is also given and the related parameters are presented explicitly. We provide an approach to systematically build the Wannier tight-binding model for generic twisted graphene systems. Our model provides a firm basis for further study of the many-body effects in these systems.

cond-mat.mes-hall↗

Engineering symmetry breaking in two-dimensional layered materials

Symmetry breaking in two-dimensional layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including but not limited to spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose-Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of two-dimensional layered materials not only offers extraordinary opportunities to tune their physical properties, but also provides unprecedented possibilities to introduce completely new physics and technological innovations in electronics, photonics and optoelectronics. Indeed, over the past 15 years, a wide variety of physical, structural and chemical approaches have been developed to engineer symmetry breaking of two-dimensional layered materials. In this Review, we focus on the recent progresses on engineering the breaking of inversion, rotational, time reversal and spontaneous gauge symmetries in two-dimensional layered materials, and illustrate our perspectives on how these may lead to potential new physics and applications.

cond-mat.mes-hall↗

Tunable magneto-optical effect, anomalous Hall effect and anomalous Nernst effect in two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$

Utilizing the first-principles density functional theory calculations together with group theory analyses, we systematically investigate the spin order-dependent magneto-optical effect (MOE), anomalous Hall effect (AHE), and anomalous Nernst effect (ANE) in a recently discovered two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$. We find that the spin prefers an in-plane direction by the magnetocrystalline anisotropy energy calculations. The MOE, AHE, and ANE display a period of $2π/3$ when the spin rotates within the atomic plane, and they are forbidden if there exists a mirror plane perpendicular to the spin direction. By reorienting the spin from in-plane to out-of-plane direction, the MOE, AHE, and ANE are enhanced by around one order of magnitude. Moreover, we establish the layer-dependent magnetic properties for multilayer $1T$-CrTe$_2$ and predict antiferromagnetism and ferromagnetism for bilayer and trilayer $1T$-CrTe$_2$, respectively. The MOE, AHE, and ANE are prohibited in antiferromagnetic bilayer $1T$-CrTe$_2$ due to the existence of the spacetime inversion symmetry, whereas all of them are activated in ferromagnetic trilayer $1T$-CrTe$_2$ and the MOE is significantly enhanced compared to monolayer $1T$-CrTe$_2$. Our results show that the magneto-optical and anomalous transports proprieties of $1T$-CrTe$_2$ can be effectively modulated by altering spin direction and layer number.

cond-mat.mtrl-sci↗

Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.

cond-mat.mes-hall↗

Review: Progress on 2D topological insulators and potential ap-plications in electronic devices

Two-dimensional topological insulators (2DTI) have attracted increasing attention during the past few years. New 2DTI with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally. In this review, the 2DTI, ranging from single element graphene-like materials to bi-elemental TMDs and to multi-elemental materials, with different thicknesses, structures and phases, have been summarized and discussed. The topological properties (especially the quantum spin Hall effect and Dirac fermion feature) and potential applications have been summarized. This review also points out the challenge and opportuni-ties for future 2DTI study, especially on the device applications based on the topological properties.

cond-mat.mes-hall↗

Topologically Nontrivial Interband Plasmons in Type-II Weyl Semimetal MoTe$_2$

In many realistic topological materials, more than one kind of fermions contribute to the electronic bands crossing the Fermi level, leading to various novel phenomena. Here, using momentum-resolved inelastic electron scattering, we investigate the plasmons and their evolution across the phase transition in a type-II Weyl Semimetal MoTe$_2$, in which both Weyl fermions and trivial nonrelativistic fermions contribute to the Fermi surface in the Td phase. One plasmon mode in the 1T' phase at high temperature and two plasmon modes in the topological T$_d$ phase at low temperature are observed. Combining with first-priciples calculations, we show that all the plasmon modes are dominated by the interband correlations between the inverted bands of MoTe$_2$. Especially in the T$_d$ phase, since the electronic bands split due to inversion symmetry breaking and spin-orbit coupling, the plasmon modes manifest the interband correlation between the topological Weyl fermions and the trivial nonrelativistic electrons. Our work emphasizes the significance of the interplay between different kinds of carriers in plasmons of topological materials.

cond-mat.mtrl-sci↗

Ferromagnetic hybrid nodal loop and switchable type-I and type-II Weyl fermions in two-dimension

As a novel type of fermionic state, hybrid nodal loop with the coexistence of both type-I and type- II band crossings has attracted intense research interest. However, it remains a challenge to realize hybrid nodal loop in both two-dimensional (2D) materials and in ferromagnetic (FM) materials. Here, we propose the first FM hybrid nodal loop in 2D CrN monolayer. We show that the material has a high Curie temperature (> 600 K) FM ground state, with the out-of-plane [001] magnetization. It shows a half-metallic band structure with two bands in the spin-up channel crossing each other near the Fermi level. These bands produce both type-I and type-II band crossings, which form a fully spin-polarized hybrid nodal loop. We find the nodal loop is protected by the mirror symmetry and robust against spin-orbit coupling (SOC). An effective Hamiltonian characterizing the hybrid nodal loop is established. We further find the configuration of nodal loop can be shifted under external perturbations such as strain. Most remarkably, we demonstrate that both type-I and type-II Weyl nodes can be realized from such FM hybrid nodal loop by simply shifting the magnetization from out-of-plane to in-plane. Our work provides an excellent candidate to realize FM hybrid nodal loop and Weyl fermions in 2D material, and is also promising for related topological applications with their intriguing properties.

cond-mat.mtrl-sci↗

Observation of the Topologically Originated Edge States in large-gap Quasi-One-Dimensional a-Bi$_4$Br$_4$

Two-dimensional topological insulator features time-reversal-invariant spin-momentum-locked one-dimensional (1D) edge states with a linear energy dispersion. However, experimental access to 1D edge states is still of great challenge and only limited to few techniques to date. Here, by using infrared absorption spectroscopy, we observed robust topologically originated edge states in a-Bi4Br4 belts with definitive signature of strong infrared absorption at belt sides and distinct anisotropy with respect to light polarizations, which is further supported by first-principles calculations. Our work demonstrates for the first time that the infrared spectroscopy can offer a power-efficient approach in experimentally probing 1D edge states of topological materials.

cond-mat.mtrl-sci↗

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics.

cond-mat.mtrl-sci↗

Topological Nodal Line Electrides: Realization of Ideal Nodal Line State Nearly Immune from Spin-Orbit Coupling

Nodal line semimetals (NLSs) have attracted broad interest in current research. In most of existing NLSs, the intrinsic properties of nodal lines are greatly destroyed because nodal lines usually suffer sizable gaps induced by non-negligible spin-orbit coupling (SOC). In this work,we propose the topological nodal line electrides (TNLEs), which achieve electronic structures of nodal lines and electrides simultaneously, provide new insight on designing excellent NLSs nearly immune from SOC. Since the states near the Fermi level are most contributed by nonnucleus-bounded interstitial electrons, nodal lines in TNLEs manifest extremely small SOCinduced gap even possessing heavy elements. Especially, we propose the family of A2B (A = Ca, Sr, Ba; B= As, Sb, Bi) materials are realistic TNLEs with negligible SOC-induced gaps, which can play as excellent platforms to study the intrinsic properties of TNLEs

cond-mat.mtrl-sci↗