arXiv subjects

Yugui Yao

Publications and source records attributed to Yugui Yao.

At least 235 records · Page 13Linked to original sources

arXiv2018

Nodal line semimetal states in positive electrode material of lead-acid battery: Lead dioxide family and its derivatives

Based on first-principles calculations and symmetry analysis, we report that the three-dimensional (3D) nodal line (NL) semimetal phases can be realized in the lead dioxide family (\emph{$α$}-PbO$_2$ and \emph{$β$}-PbO$_2$) and its derivatives. The \emph{$β$}-PbO$_2$ features two orthogonal nodal rings around the Fermi level, protected by the mirror reflection symmetry. The effective model is developed and the related parameters are given by fitting with the HSE06 band structures. The NLs mainly come from the $p$ orbitals of the light element O and are rather robust against such tiny spin-orbit coupling. The NL phase of the \emph{$α$}-PbO$_2$ can be effectively tailored by strain, making a topological phase transition between a semiconductor phase and a NL phase. In addition, the exploration of \emph{$β$}-PbO$_2$ derivatives (i.e. \emph{$β$}-PbS$_2$ and \emph{$β$}-PbSe$_2$) and confirmation of their topological semimetallicity greatly enrich the NL semimetal family. These findings pave a route for designing topological NL semimetals and spintronic devices based on realistic PbO$_2$ family.

cond-mat.mtrl-sci↗

arXiv2018

Mirror Protected Multiple Nodal Line Semimetals and Material Realization

The conventional k.p method fails to capture the full and essential physics of many symmetry enriched multiple nodal line structures in the three dimensional Brillouin zone. Here we present a new and systematical method to construct the effective lattice model of mirror symmetry protected three-dimensional multiple nodal line semimetals, when the spin-orbit interaction is ignored. For systems with a given pair of perpendicular nodal rings, we obtain all the effective lattice models and eleven inequivalent nodal line Fermi surfaces together with their related constraints. By means of first-principles calculations, we first propose a family of real materials, beta phase of ternary nitrides X2GeN2 (X = Ca; Sr; Ba), that support one kind of these novel Fermi surfaces. Therefore, our work deepens the understanding of the nodal line structures and promotes the experimental progress of topological nodal line semimetals.

cond-mat.mtrl-sci↗

arXiv2018

Tunable ferroelectricity and anisotropic electric transport in monolayer $β$-GeSe

Low-dimensional ferroelectricity has attracted tremendous attention due to its huge potential in device applications. Here, based on first-principles calculations, we predict the existence of spontaneous in-plane electrical polarization and ferroelectricity in monolayer $β$-GeSe, a polymorph of GeSe with a boat conformation newly synthesized in experiment. The magnitude of the polarization is about $0.16$ nC/m, which is comparable to that of monolayer SnTe studied in recent experiment, and the intrinsic Curie temperature is estimated to be above 200 K. Interestingly, owing to its puckered structure, the physical properties of $β$-GeSe can be easily controlled by strain. The Curie temperature can be raised above room temperature by applying a ($\sim 1\%$) tensile strain, and the magnitude of polarization can be largely increased by strains in either armchair or zigzag directions. Furthermore, we find that for the case with electron doping, applying strain can readily tune the anisotropic electric transport with the preferred conducting direction rotated by $90^\circ$, which is connected with a strain-induced Lifshitz transition. The ratio between the effective masses along the two in-plane directions can undergo a dramatic change of two orders of magnitude even by a 2% strain. Our result reveals monolayer $β$-GeSe as a promising platform for exploring ferroelectricity in two-dimensions and for nanoscale mechano-electronic device applications.

cond-mat.mtrl-sci↗

arXiv2018

Floquet High Chern Insulators in Periodically Driven Chirally Stacked Multilayer Graphene

Chirally stacked $N$-layer graphene is a semimetal with $\pm p^N$ band-touching at two nonequivalent corners in its Brillioun zone. We predict that an off-resonant circularly polarized light (CPL) drives chirally stacked $N$-layer graphene into a Floquet Chern Insulators (FCIs), a.k.a. quantum anomalous Hall insulators, with tunable high Chern number $C_F=\pm N$ and large gaps. A topological phase transition between such a FCI and a valley Hall (VH) insulator with high valley Chern number $C_v=\pm N$ induced by a voltage gate can be engineered by the parameters of the CPL and voltage gate. We propose a topological domain wall between the FCI and VH phases, along which perfectly valley-polarized $N$-channel edge states propagate unidirectionally without backscattering.

cond-mat.mes-hall↗

arXiv2018

Experimental observation of node-line-like surface states in LaBi

In a Dirac nodal line semimetal, the bulk conduction and valence bands touch at extended lines in the Brillouin zone. To date, most of the theoretically predicted and experimentally discovered nodal lines derive from the bulk bands of two- and three-dimensional materials. Here, based on combined angle-resolved photoemission spectroscopy measurements and first-principles calculations, we report the discovery of node-line-like surface states on the (001) surface of LaBi. These bands derive from the topological surface states of LaBi and bridge the band gap opened by spin-orbit coupling and band inversion. Our first-principles calculations reveal that these "nodal lines" have a tiny gap, which is beyond typical experimental resolution. These results may provide important information to understand the extraordinary physical properties of LaBi, such as the extremely large magnetoresistance and resistivity plateau.

cond-mat.mtrl-sci↗

arXiv2018

Nonsymmorphic-symmetry-protected hourglass Dirac loop, nodal line, and Dirac point in bulk and monolayer $X_3$SiTe$_6$ ($X=$ Ta, Nb)

Nonsymmorphic space group symmetries can generate exotic band-crossings in topological metals and semimetals. Here, based on symmetry analysis and first-principles calculations, we reveal rich band-crossing features in the existing layered compounds Ta$_3$SiTe$_6$ and Nb$_3$SiTe$_6$, enabled by nonsymmorphic symmetries. We show that in the absence of spin-orbit coupling (SOC), these three-dimensional (3D) bulk materials possess accidental Dirac loops and essential fourfold nodal lines. In the presence of SOC, there emerges an hourglass Dirac loop---a fourfold degenerate nodal loop, on which each point is a neck-point of an hourglass-type dispersion. We show that this interesting type of band-crossing is protected and dictated by the nonsymmorphic space group symmetries, and it gives rise to drumhead-like surface states. Furthermore, we also investigate these materials in the monolayer form. We show that these two-dimensional (2D) monolayers host nodal lines in the absence of SOC, and the nodal lines transform to essential spin-orbit Dirac points when SOC is included. Our work suggests a realistic material platform for exploring the fascinating physics associated with nonsymmorphic band-crossings in both 3D and 2D systems.

cond-mat.mtrl-sci↗

arXiv2017

An efficient method for hybrid density functional calculation with spin-orbit coupling

In first-principles calculations, hybrid functional is often used to improve accuracy from local exchange correlation functionals. A drawback is that evaluating the hybrid functional needs significantly more computing effort. When spin-orbit coupling (SOC) is taken into account, the non-collinear spin structure increases computing effort by at least eight times. As a result, hybrid functional calculations with SOC are intractable in most cases. In this paper, we present an approximate solution to this problem by developing an efficient method based on a mixed linear combination of atomic orbital (LCAO) scheme. We demonstrate the power of this method using several examples and we show that the results compare very well with those of direct hybrid functional calculations with SOC, yet the method only requires a computing effort similar to that without SOC. The presented technique provides a good balance between computing efficiency and accuracy, and it can be extended to magnetic materials.

cond-mat.mtrl-sci↗

arXiv2017

Tunable Intrinsic Plasmons due to Band Inversion in Topological Materials

The band inversion has led to rich physical effects in both topological insulators and topological semimetals. It has been found that the inverted band structure with the Mexican-hat dispersion could enhance the interband correlation leading to a strong intrinsic plasmon excitation. Its frequency ranges from several $\mathrm{meV}$ to tens of $\mathrm{meV}$ and can be effectively tuned by the external fields. The electron-hole asymmetric term splits the peak of the plasmon excitation into double peaks. The fate and properties of this plasmon excitation can also act as a probe to characterize the topological phases even in the lightly doped systems. We numerically demonstrate the impact of the band inversion on plasmon excitations in magnetically doped thin films of three-dimensional strong topological insulators, V- or Cr-doped (Bi, Sb)$_2$Te$_3$, which support the quantum anomalous Hall states. Our work thus sheds some new light on the potential applications of topological materials in plasmonics.

cond-mat.mes-hall↗

arXiv2017

From Type-II Triply Degenerate Nodal Points and Three-Band Nodal Rings to Type-II Dirac Points in Centrosymmetric Zirconium Oxide

Using first-principles calculations, we report that ZrO is a topological material with the coexistence of three pairs of type-II triply degenerate nodal points (TNPs) and three nodal rings (NRs), when spin-orbit coupling (SOC) is ignored. Noticeably, the TNPs reside around Fermi energy with large linear energy range along tilt direction (> 1 eV) and the NRs are formed by three strongly entangled bands. Under symmetry-preserving strain, each NR would evolve into four droplet-shaped NRs before fading away, producing distinct evolution compared with that in usual two-band NR. When SOC is included, TNPs would transform into type-II Dirac points while all the NRs have gaped. Remarkably, the type-II Dirac points inherit the advantages of TNPs: residing around Fermi energy and exhibiting large linear energy range. Both features facilitate the observation of interesting phenomena induced by type-II dispersion. The symmetry protections and low-energy Hamiltonian for the nontrivial band crossings are discussed.

cond-mat.mtrl-sci↗

arXiv2017

Trigonal warping induced terraced spin texture and nearly perfect spin polarization in graphene with Rashba effect

Electrical tunability of spin polarization has been a focus in spintronics. Here, we report that the trigonal warping (TW) effect, together with spin-orbit coupling (SOC), can lead to two distinct magnetoelectric effects in low-dimensional systems. Taking graphene with Rashba SOC as example, we study the electronic properties and spin-resolved scattering of system. It is found that the TW effect gives rise to a terraced spin texture in low-energy bands and can render significant spin polarization in the scattering, both resulting in an efficient electric control of spin polarization. Our work unveils not only SOC but also the TW effect is important for low-dimensional spintronics.

cond-mat.mtrl-sci↗

arXiv2017

From Node-Line Semimetals to Large Gap QSH States in New Family of Pentagonal Group-IVA Chalcogenide

Two-dimensional (2D) topological insulators (TIs) have attracted tremendous research interest from both theoretical and experimental fields in recent years. However, it is much less investigated in realizing node line (NL) semimetals in 2D materials.Combining first-principles calculations and $k \cdot p$ model, we find that NL phases emerge in p-CS$_2$ and p-SiS$_2$, as well as other pentagonal IVX$_2$ films, i.e. p-IVX$_2$ (IV= C, Si, Ge, Sn, Pb; X=S, Se, Te) in the absence of spin-orbital coupling (SOC). The NLs in p-IVX$_2$ form symbolic Fermi loops centered around the $Γ$ point and are protected by mirror reflection symmetry. As the atomic number is downward shifted, the NL semimetals are driven into 2D TIs with the large bulk gap up to 0.715 eV induced by the remarkable SOC effect.The nontrivial bulk gap can be tunable under external biaxial and uniaxial strain. Moreover, we also propose a quantum well by sandwiching p-PbTe$_2$ crystal between two NaI sheets, in which p-PbTe$_2$ still keeps its nontrivial topology with a sizable band gap ($\sim$ 0.5 eV). These findings provide a new 2D materials family for future design and fabrication of NL semimetals and TIs.

cond-mat.mtrl-sci↗

arXiv2017

Two-dimensional Spin-Orbit Dirac Point in Monolayer HfGeTe

Dirac points in two-dimensional (2D) materials have been a fascinating subject of research, with graphene as the most prominent example. However, the Dirac points in existing 2D materials, including graphene, are vulnerable against spin-orbit coupling (SOC). Here, based on first-principles calculations and theoretical analysis, we propose a new family of stable 2D materials, the HfGeTe-family monolayers, which represent the first example to host so-called spin-orbit Dirac points (SDPs) close to the Fermi level. These Dirac points are special in that they are formed only under significant SOC, hence they are intrinsically robust against SOC. We show that the existence of a pair of SDPs are dictated by the nonsymmorphic space group symmetry of the system, which are very robust under various types of lattice strains. The energy, the dispersion, and the valley occupation around the Dirac points can be effectively tuned by strain. We construct a low-energy effective model to characterize the Dirac fermions around the SDPs. Furthermore, we find that the material is simultaneously a 2D $\mathbb{Z}_2$ topological metal, which possesses nontrivial $\mathbb{Z}_2$ invariant in the bulk and spin-helical edge states on the boundary. From the calculated exfoliation energies and mechanical properties, we show that these materials can be readily obtained in experiment from the existing bulk materials. Our result reveals HfGeTe-family monolayers as a promising platform for exploring spin-orbit Dirac fermions and novel topological phases in two-dimensions.

cond-mat.mtrl-sci↗

arXiv2017

Tunable Half-metallic Magnetism in Atom-thin Holey Two-dimensional C$_2$N Monolayer

Exploring two-dimensional (2D) materials with magnetic ordering is a focus of current research. It remains a challenge to achieve tunable magnetism in a material of one-atom-thickness without introducing extrinsic magnetic atoms or defects. Here, based on first-principles calculations, we propose that tunable ferromagnetism can be realized in the recently synthesized holey 2D C$_2$N ($h$2D-C$_2$N) monolayer via purely electron doping that can be readily achieved by gating. We show that owing to the prominent van Hove singularity in the band structure, the material exhibits ferromagnetism even at a small doping level. Remarkably, over a wide doping range of 4$\times$10$^{13}$/cm$^2$ to 8$\times$10$^{13}$/cm$^2$, the system becomes half-metallic, with carriers fully spin-polarized. The estimated Curie temperature can be up to 320 K. Besides gating, we find that the magnetism can also be effectively tuned by lattice strain. Our result identifies $h$2D-C$_2$N as the first material with single-atom-thickness that can host gate-tunable room-temperature half-metallic magnetism, suggesting it as a promising platform to explore nanoscale magnetism and flexible spintronic devices.

cond-mat.mtrl-sci↗

arXiv2017

Type-II nodal loops: theory and material realization

Nodal loop appears when two bands, typically one electron-like and one hole-like, are crossing each other linearly along a one-dimensional manifold in the reciprocal space. Here we propose a new type of nodal loop which emerges from crossing between two bands which are both electron-like (or hole-like) along certain direction. Close to any point on such loop (dubbed as a type-II nodal loop), the linear spectrum is strongly tilted and tipped over along one transverse direction, leading to marked differences in magnetic, optical, and transport responses compared with the conventional (type-I) nodal loops. We show that the compound K4P3 is an example that hosts a pair of type-II nodal loops close to the Fermi level. Each loop traverses the whole Brillouin zone, hence can only be annihilated in pair when symmetry is preserved. The symmetry and topological protections of the loops as well as the associated surface states are discussed.

cond-mat.mtrl-sci↗

arXiv2017

Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si

Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a new platform to study the novel physical properties in two-dimensional Dirac materials and provide new opportunities to realize high-speed low-dissipation devices.

cond-mat.mtrl-sci↗

arXiv2017

Promising Ferroelectricity in 2D Group IV Tellurides: a First-Principles Study

Based on the first-principles calculations, we investigated the ferroelectric properties of two-dimensional (2D) Group-IV tellurides XTe (X=Si, Ge and Sn), with a focus on GeTe. 2D Group-IV tellurides energetically prefer an orthorhombic phase with a hinge-like structure and an in-plane spontaneous polarization. The intrinsic Curie temperature Tc of monolayer GeTe is as high as 570 K and can be raised quickly by applying a tensile strain. An out-of-plane electric field can effectively decrease the coercive field for the reversal of polarization, extending its potential for regulating the polarization switching kinetics. Moreover, for bilayer GeTe the ferroelectric phase is still the ground state. Combined with these advantages, 2D GeTe is a promising candidate material for practical integrated ferroelectric applications.

cond-mat.mtrl-sci↗

arXiv2017

Artificial gravity field, astrophysical analogues, and topological phase transitions in strained topological semimetals

Effective gravity and gauge fields are emergent properties intrinsic for low-energy quasiparticles in topological semimetals. Here, taking two Dirac semimetals as examples, we demonstrate that applied lattice strain can generate warped spacetime, with fascinating analogues in astrophysics. Particularly, we study the possibility of simulating black-hole/white-hole event horizons and gravitational lensing effect. Furthermore, we discover strain-induced topological phase transitions, both in the bulk materials and in their thin films. Especially in thin films, the transition between the quantum spin Hall and the trivial insulating phases can be achieved by a small strain, naturally leading to the proposition of a novel piezo-topological transistor device. Possible experimental realizations and analogue of Hawking radiation effect are discussed. Our result bridges multiple disciplines, revealing topological semimetals as a unique table-top platform for exploring interesting phenomena in astrophysics and general relativity; it also suggests realistic materials and methods to achieve controlled topological phase transitions with great potential for device applications.

cond-mat.mtrl-sci↗

arXiv2017

Self-assembled chiral phosphorus nanotubes from phosphorene: a molecular dynamics study

Controlled syntheses in nanoscale structures should be expected and phosphorous nanotubes with predefined chiralities are important in electronic devices with tunable bandgap. Here, incorporating molecular dynamics simulations with theoretical analyses, we show that a zigzag phosphorene nanoribbon can self-assemble and form a corresponding chiral phosphorous nanotube surrounding a template armchair phosphorous nanotube. The van der Waals potential between the nanoribbon and the nanotube is transformed to the intrinsic deformed and chemical bonding energies of the synthesized tube together with partial kinetic energy. The self-assembly process has an apparent temperature dependence and size effect and the formed chiral tube is thermodynamically stable. Also, the chirality and measurement can be tuned by the radius of template tube and the aspect ratio of raw ribbon. The study suggests a novel and feasible approach for controlled synthesis of phosphorous nanotubes and thus is of great interest for semiconductor device applications.

cond-mat.mtrl-sci↗